• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.35.1-35.1
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• 2010

The Cu(In,Ga)Se2(CIGS) thin film solar cells have been achieved until almost 20% efficiency by NREL. These solar cells include chemically deposited CdS as buffer layer between CIGS absorber layer and ZnO window layer. Although CIGS solar cells with CdS buffer layer show excellent performance, many groups made hard efforts to overcome its disadvantages in terms of high absorption of short wavelength, Cd hazardous element. Among Cd-free candidate materials, the CIGS thin film solar cells with Zn compound buffer layer seem to be promising with 15.2%(module by showa shell K.K.), 18.6%(small area by NREL). However, few groups were successful to report high-efficiency CIGS solar cells with Zn compound buffer layer, compared to be known how to fabricate these solar cells. Each group's chemical bah deposition (CBD) condition is seriously different. It may mean that it is not fully understood to grow high quality Zn compound thin film on the CIGS using CBD. In this study, we focused to clarify growth mechanism of chemically deposited Zn compound thin film on the CIGS, especially. Additionally, we tried to characterize junction properties with unfavorable issues, that is, slow growth rate, imperfect film coverage and minimize these issues. Early works reported that film deposition rate increased with reagent concentration and film covered whole rough CIGS surface. But they did not mention well how film growth of zinc compound evolves homogeneously or heterogeneously and what kinds of defects exist within film that can cause low solar performance. We observed sufficient correlation between growth quality and concentration of NH3 as complex agent. When NH3 concentration increased, thickness of zinc compound increased with dominant heterogeneous growth for high quality film. But the large amounts of NH3 in the solution made many particles of zinc hydroxide due to hydroxide ions. The zinc hydroxides bonded weakly to the CIGS surface have been removed at rinsing after CBD.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.36.1-36.1
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• 2010

While the substrate-type solar cells with Cu(In,Ga)Se2 absorbers yield conversion efficiencies of up 20%[1], the highest published efficiency of Cu(In,Ga)Se2 superstrate solar cell is only 12.8% [2]. The commerciallized Cu(In,Ga)Se2 solar cells are made in the substrate configuration having the stacking sequence of substrate (soda lime glass)/back contact (molybdenum)/absorber layer (Cu(In,Ga)Se2)/buffer layer (cadmium sulfide)/window layer (transparent conductive oxide)/anti reflection layer (MgF2) /grid contact. Thus, it is not possible to illuminate the substrate-type cell through the glass substrate. Rather, it is necessary to illuminate from the opposite side which requires an elaborate transparent encapsulation. In contrast to that, the configuration of superstrate solar cell allows the illumination through the glass substrate. This saves the expensive transparent encapsulation. Usually, the high quality Cu(In,Ga)Se2 absorber requires a high deposition temperature over 550C. Therefore, the front contact should be thermally stable in the temperature range to realize a successful superstrate-type solar cell. In this study, it was tried to make a decent superstrate-type solar cell with the thermally stable ZnO:Al layer obtained by adjusting its deposition parameters in magnetron sputtering process. The effect of deposition condition of the layer on the cell performance will be discussed together with hall measurement results and current-voltage characteristics of the cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.285-285
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• 2011

EUVL (Extreme Ultra Violet Lithography) is one of competitive lithographic technologies for sub-30nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance since the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.2573-2578
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• 2007

In order to investigate the vortex body frame interaction around the side mirror of a passenger car, velocity vector fields in the wake, pressure distributions and boundary layer flows over both the mirror surface and the mirror housing, have been measured by several experimental tools. It was resulted that only within an half downstream distance of the mirror span there appears the recirculation zone, and also found that vortex trail towards to the driver side window between A and B pillars, making the acoustic noise and vibration. Wake vortex rolls up after this recirculating zone and makes the trail of the vortex center towards the driver side window, which was also confirmed by measurements of wake velocity vectors in the vertical sections of the trail and visualization over the side mirror surfaces as well. It was also observed that total pressure distribution over the mirror surface has the minimum peak near the lower tip region which can be considered as the origin of the vortex center. It can be concluded that the geometrical modification of the lower tip and the upper root area of the mirror housing is the key to control the wake vortex.

• Bulletin of the Korean Chemical Society
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• v.33 no.5
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• pp.1734-1740
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• 2012

Voltammetric characterization of hydrophilic anion transfer processes across a 66 microhole array interface between the water and polyvinylchloride-2-nitrophenyloctylether gel layer is demonstrated. Since the transfer of hydrophilic anions including $Br^-$, $NO_3{^-}$, $I^-$, $SCN^-$ and $ClO_4{^-}$ across the liquid/gel interface usually sets the potential window within a negative potential region, a highly hydrophobic organic electrolyte, tetraoctylammonium tetrakis(pentafluorophenyl)borate, providing a wider potential window was incorporated into the gel phase. The transfer reaction of perchlorate anions across the microhole-water/gel interface was first studied using cyclic voltammetry and differential pulse voltammetry. The full voltammetric response of perchlorate anion transfer was then used as a reference for evaluating the half-wave transfer potentials, the formal transfer potentials and the formal Gibbs transfer energies of more hydrophilic anions such as $Br^-$, $NO_3{^-}$, $I^-$, and $SCN^-$. The current response associated with the perchlorate anion transfer across the micro-water/gel interface versus the perchlorate concentration was also demonstrated for sensing applications.

• Proceedings of the IEEK Conference
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• 2003.11b
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• pp.243-246
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• 2003

In this paper, we propose a new digital audio watermarking technique with the wavelet transform. The watermark is embedded by eliminating unnecessary information of audio signal based on human auditory system (HAS). This algorithm is an audio watermarking method, which does not require any original audio information in watermark extraction process. In this paper, the masking effect is used for audio watermarking, that is, post-tempera] masking effect. We construct the window with the synchronization signal and we extract the best frame in the window by using the zero-crossing rate (ZCR) and the energy of the audio signal. The watermark may be extracted by using the correlation of the watermark signal and the portion of the frame. Experimental results show good robustness against MPEG1-layer3 compression and other common signal processing manipulations. All the attacks are made after the D/A/D conversion.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.95-100
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• 2006

The GaAs-on-insulator (GOI) wafer fabrication technique has been developed by using ion-cut process, based on hydrogen ion implantation and wafer direct bonding techniques. The hydrogen ion implantation condition for the ion-cut process in GaAs and the associated implantation mechanism have been investigated in this paper. Depth distribution of hydrogen atoms and the corresponding lattice disorder in (100) GaAs wafers produced by 40 keV hydrogen ion implantation were studied by SIMS and RBS/channeling analysis, respectively. In addition, the formation of platelets in the as-implanted GaAs and their microscopic evolution with annealing in the damaged layer was also studied by cross-sectional TEM analysis. The influence of the ion fluence, the implantation temperature and subsequent annealing on blistering and/or flaking was studied, and the optimum conditions for achieving blistering/splitting only after post-implantation annealing were determined. It was found that the new optimum implant temperature window for the GaAs ion-cut lie in $120{\sim}160^{\circ}C$, which is markedly lower than the previously reported window probably due to the inaccuracy in temperature measurement in most of the other implanters.

• Korean Chemical Engineering Research
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• v.47 no.3
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• pp.316-320
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• 2009

UV curable hard and color coatings were formed on polycarbonate(PC) films. The coating materials were composed of a commercially available end-capped polyester(EB830), diacrylate monomer(HDDA), silicon acrylate, photoinitiator, and organic dye as a coloring agent. The surface properties of coating films were evaluated, and the influences of the compositions of coating materials were investigated. The coating films showed high transmission and good adhesion between coating layer and PC substrate. And the coating films exhibited higher hardness than bare PC film. The coating films with various colors were obtained by wet process, and the clear and color window lenses for mobile phone were prepared successfully.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.388-388
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• 2012

In this letter, We have investigated cell characteristics of the alloy FePt-NDs charge trapping memory capacitors with high-k $Al_2O_3$ dielectrics as a blocking oxide. The capacitance versus voltage (C-V) curves obtained from a representative MOS capacitor embedded with FePt-NDs synthesized by the post deposition annealing (PDA) treatment process exhibit the window of flat-band voltage shift, which indicates the presence of charge storages in the FePt-NDs. It is shown that NDs memory with high-k $Al_2O_3$ as a blocking oxide has performance in large memory window and low leakage current when the diameter of ND is below 2 nm. Moreover, high-k $Al_2O_3$ as a blocking oxide increases the electric field across the tunnel oxide, while reducing the electric field across the blocking layer. From this result, this device can achieve lower P/E voltage and lower leakage current. As a result, a FePt-NDs device with high-k $Al_2O_3$ as a blocking oxide obtained a~7V reduction in the programming voltages with 7.8 V memory.

• The KIPS Transactions:PartA
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• v.13A no.7 s.104
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• pp.573-580
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• 2006

The conventional transport layer protocol TCP is designed to work under condition of packet loss is due to the network congestion, so that it's suitable in the traditional wired network with fixed hosts but it's inefficient on the wireless network where the environment of fading, noise, and transmission error comes from interference. This result from the needless transmission control of the bit error is due to treats the packet loss as a packet congestion control in the wireless network. In this paper, we propose the advanced SNOOP protocol with the consecutive packet loss and TCP window control to avoid the needless congestion management algorithm in wireless network for the wireless TCP packet transmission enhancement. We verify the performance of the advanced module from the simulation experiment result.