• The Journal of Korean Institute of Communications and Information Sciences
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• v.32 no.11A
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• pp.1086-1095
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• 2007

This paper proposes a novel non-coherent TOA estimation scheme using multiple correlation process on the existence of multiple simultaneously operating piconets (SOPs). Impulse radio-ultra wideband (IR-UWB) based on direct sequence spread spectrum (DSSS) using Gold sequence is employed in order to discriminate each piconet. In order to enhance the characteristic of correlation, this paper presents the method of multiple mask operation (MMO). The time of arrival (TOA) of direct line of sight (DLOS) path is estimated via two step coarse/fine timing detection. To verify the performance of proposed scheme, two distinct channel models approved by IEEE 802.15.4a Task Group (TG) are considered. According to the simulation results, it could conclude that the proposed scheme have performed better performance than the conventional method well even in densed indoor multi-path environment as well as in the existence of multiple SOPs.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.768-771
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• 2003

The impulse between launch vehicle and atmosphere can generate a lot of noise and vibration during the process of launching a satellite. Structurally, electronic equipment (KOMPSAT 2, RDU : Remote Drive Unit) of a satellite consists of aluminum case containing PCB (Printed circuit boards). Each PCB has resistors and IC (Integrated circuits). Noise and vibration of wide frequency band are transferred to the inside of fairing, subsequently creating vibration of the electronic equipment of the satellite. In this situation. random vibration can cause malfunctioning of the electronic equipment of the device. Furthermore, when tile frequency of random vibration meets with natural frequency of PCB. fatigue fracture nay occur in the part of solder joint. The launching environment, thus. needs to be carefully considered when designing the electronic equipment of a satellite. In general. the safety of the electronic equipment is supposed to be related to the natural frequency, shapes of mode and dynamic deflection of PCB in the electronic equipment. Structural vibration analysis of PCB and its electronic components can be performed using either FEM(Finite Element Method) or vibration test. In this study. the natural frequency and dynamic deflection of PCB are measured by FEM, aud the safety of the electronic components of PCB is being evaluated according to the results. This study presents a unique method for finite element modeling and analysis of PCB and its electronic components. The results of FEA are verified by vibration test. The method proposed herein may be applicable to various designs from the electronic equipments of a satellite to home electronics.

• Journal of IKEEE
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• v.19 no.3
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• pp.342-348
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• 2015

High speed implementation of digital filters is required in high data rate applications such as hard-wired wide band modem and high resolution video codec. Since the critical path of the digital filter is the MAC (multiplication and accumulation) circuit, the filter coefficient with sparse non-zero bits enables high speed implementation with adders of low hardware cost. Compressive sensing has been reported to be very successful in sparse representation and sparse signal recovery. In this paper a filter design method for digital FIR filters with CSD (canonic signed digit) coefficients using compressive sensing technique is proposed. The sparse non-zero signed bits are selected in the greedy fashion while pruning the mistakenly selected digits. A few design examples show that the proposed method can be utilized for designing sparse CSD coefficient digital FIR filters approximating the desired frequency response.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.199-199
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• 2011

Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.48-48
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• 2011

We have developed a chemically-driven top-down approach using vapor phase HCl to form various GaN nanostructures and successfully demonstrated dislocation-free and strain-relaxed GaN nanostructures without etching damage formed by a selective dissociation method. Our approach overcomes many limitations encountered in previous approaches. There is no need to make a pattern, complicated process, and expensive equipment, but it produces a high-quality nanostructure over a large area at low cost. As far as we know, this is the first time that various types of high-quality GaN nanostructures, such as dot, cone, and rod, could be formed by a chemical method without the use of a mask or pattern, especially on the Ga-polar GaN. It is well known that the Ga-polar GaN is difficult to etch by the common chemical wet etching method because of the chemical stability of GaN. Our chemically driven GaN nanostructures show excellent structure and optical properties. The formed nanostructure had various facets depending on the etching conditions and showed a high crystal quality due to the removal of defects, such as dislocations. These structure properties derived excellent optical performance of the GaN nanostructure. The GaN nanostructure had increased internal and external quantum efficiency due to increased light extraction, reduced strain, and improved crystal quality. The chemically driven GaN nanostructure shows promise in applications such as efficient light-emitting diodes, field emitters, and sensors.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.2 s.117
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• pp.213-218
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• 2007

In this paper, we propose the design and fabrication on high frequency CMOS VCO for DS-UWB(Direct-Sequence Ultra-WideBand) applications using 0.18 ${\mu}m$ process. The complementary cross-coupled LC oscillator architecture which is composed of PMOS, NMOS symmetrically, is designed for improving the phase noise characteristic. The resistor is used instead of current source that reduce the 1/f noise of current source. The high-speed buffer is needed for measuring the output characteristic of VCO using spectrum analyzer, therefore the high-speed inverter buffer is designed with VCO. A fabricated core VCO size is $340{\mu}m{\times}535{\mu}m$. The VCO is tunable between 7.09 and 7.52 GHz and has a phase noise lower than -107 dBc/Hz at 1-MHz offset over entire tuning range. The measured harmonic suppression is 32 dB. The VCO core circuit draws 2.0 mA from a 1.8 V supply.

• Earthquakes and Structures
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• v.8 no.6
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• pp.1363-1386
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• 2015

The October 23 2011 Van Earthquake is studied from an earthquake engineering point of view. Strong ground motion processing was performed to investigate features of the earthquake source, forward directivity effects during the rupture process as well as local site effects. Strong motion characteristics were investigated in terms of peak ground motion and spectral acceleration values. Directiviy effects were discussed in detail via elastic response spectra and wide band spectograms to see the high frequency energy distributions. Source parameters and slip distribution results of the earthquake which had been proposed by different researchers were summarized. Influence of the source parameters on structural response were shown by comparing elastic response spectra of Muradiye synthetic records which were performed by broadband strong motion simulations of the earthquake. It has been emphasized that characteristics of the earthquake rupture dynamics and their effects on structural design might be investigated from a multidisciplinary point of view. Seismotectonic calculations (e.g., slip pattern, rupture velocity) may be extended relating different engineering parameters (e.g., interstorey drifts, spectral accelerations) across different disciplines while using code based seismic design approaches. Current state of the art building codes still far from fully reflecting earthquake source related parameters into design rules. Some of those deficiencies and recent efforts to overcome these problems were also mentioned. Next generation ground motion prediction equations (GMPEs) may be incorporated with certain site categories for site effects. Likewise in the 2011 Van Earthquake, Reverse/Oblique earthquakes indicate that GMPEs need to be feasible to a wider range of magnitudes and distances in engineering practice. Due to the reverse faulting with large slip and dip angles, vertical displacements along with directivity and fault normal effects might significantly affect the engineering structures. Main reason of excessive damage in the town of Erciş can be attributed to these factors. Such effects should be considered in advance through the establishment of vertical design spectra and effects might be incorporated in the available GMPEs.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• v.1
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• pp.309-314
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• 2006

In general DGPS system, the correction message is transferred to users by wireless modem. To cover wide area, many DGPS station should be needed. And DGPS users must have a wireless modem that is not necessary in standalone GPS. But SBAS users don't need a wireless modem to receive DGPS corrections because SBAS correction message is transmitted from the GEO satellite by L1 frequency band. SBAS signal is generated in the GUS(Geo Uplink Subsystem) and uplink to the GEO satellite. This uplink transmission process causes two problems that are not existed in GPS. The one is a time delay in the uplink signal. The other is an ionospheric problem on uplink signal, code delay and carrier phase advance. These two problems cause ranging error to user. Another critical ranging error factor is clock synchronization. SBAS reference clock must be synchronized with GPS clock for an accurate ranging service. The time delay can be removed by close loop control. We propose uplink ionospheric error correcting algorithm for C/A code and carrier. As a result, the ranging accuracy increased high. To synchronize SBAS reference clock with GPS clock, I reviewed synchronization algorithm. And I modified it because the algorithm didn't consider doppler that caused by satellites' dynamics. SBAS reference clock synchronized with GPS clock in high accuracy by modified algorithm. We think that this paper will contribute to basic research for constructing satellite based DGPS system.

• Transactions on Electrical and Electronic Materials
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• v.5 no.1
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• pp.1-6
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• 2004

Zinc sulfide is a semiconductor with wide band gap and high refractive index and hence promising material to be used as ARC on commercial silicon solar cells. Uniform deposition of zinc sulfide (ZnS) by using chemical bath deposition (CBD) method over a large area of silicon surface is an emerging field of research because ZnS film can be used as a low cost antireflection coating (ARC). The main problem of the CBD bath process is the huge amount of precipitation that occurs during heterogeneous reaction leading to hamper the rate of deposition as well as uniformity and chemical stoichiometry of deposited film. Molar concentration of thiorea plays an important role in varying the percentage of reflectance and refractive index of as-deposited CBD ZnS film. Desirable rate of film deposition (19.6 ${\AA}$ / min), film uniformity (Std. dev. < 1.8), high value of refractive index (2.35), low reflectance (0.655) have been achieved with proper optimization of ZnS bath. Decrease in refractive index of CBD ZnS film due to high temperature treatment in air ambiance has been pointed out in this paper. Solar cells of conversion efficiency 13.8 ％ have been successfully achieved with a large area (103 mm ${\times}$ 103 mm) mono-crystalline silicon wafers by using CBD ZnS antireflection coating in this modified approach.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.232-232
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• 2010

Recently light emitting diodes (LEDs) have been expected as the new generation light sources because of their advantages such as small size, long lifetime and energy-saving. GaN, as a wide band gap material, is widely used as a material of LEDs and GaN nanorods are the one of the most widely investigated nanostructure which has advantages for the light extraction of LEDs and increasing the active area by making the cylindrical core-shell structure. Lately GaN nanorods are fabricated by various techniques, such as selective area growth, vapor-liquid-solid (VLS) technique. But these techniques have some disadvantages. Selective area growth technique is too complicated and expensive to grow the rods. And in the case of VLS technique, GaN nanorods are not vertically aligned well and the metal catalyst may act as the impurity. So we just tried to grow the GaN nanorods on Si substrate without catalyst to get the vertically well aligned nanorods without impurity. First we deposited the AlN buffer layer on Si substrate which shows more vertical growth mode than sapphire substrate. After the buffer growth, we flew trimethylgallium (TMGa) as the III group source and ammonia as the V group source. And during the GaN growth, we kept the ammonia flow stable and periodically changed the flow rate of TMGa to change the growth mode of the nanorods. Finally, as the optimization, we changed the various growth conditions such as the growth temperature, the working pressure, V/III ratio and the doping level. And we are still in the process to reduce the diameter of the nanorods and to extend the length of the nanorods simultaneously. In this study, we focused on the shape changing of GaN nanorods with different growth conditions. So we confirmed the shape of the nanorods by scanning electron microscope (SEM) and carried out the Photoluminescence (PL) measurement and x-ray diffraction (XRD) to examine the crystal quality difference between samples. Detailed results will be discussed.