• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.820-822
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• 2009

Tandem white organic light emitting diodes (WOLEDs) are fabricated by using a transparent interconnecting layer of Al:LiF composite/molybdenum oxides ($MoO_3$). We demonstrate two types of tandem WOLEDs consisting of two color emissions (red and blue emission) and three color emissions (red, green and blue emission). Tandem WOLED consisting of three color emission shows higher external quantum efficiency and current efficiency.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1215-1218
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• 2008

We investigate the effect of a light emitting layer (EML) sequence and an interlayer on the performance of the phosphorescent-fluorescent mixed white organic light emitting diodes. Two types of phosphorescent-fluorescent mixed system were evaluated. The proper position of each primary color EML was crucial to obtain best performance in each system whereas the effect of an interlayer was found to be different in both systems.

• Journal of Information Display
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• v.11 no.3
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• pp.123-127
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• 2010

Fluorescent white organic light-emitting diodes showing high color-rendering indices (CRIs) of up to 81 was demonstrated, with a silicon-cored anthracene derivative (PATSPA) doped with DPAVBi utilized as the deep-blue host and dye materials, and the commercial dyes rubrene and DCM2 utilized as the orange- and red-light-emitting dyes. The devices, consisting of three emissive layers, showed bright-white-light emission, but the ratio of the blue peak to the orange and red peaks changed with the current density and the thickness of the blue emissive layer. A high CRI was achieved with the use of a deep-blue emitter doped in a novel host and by optimizing the blue-layer thickness. The device with a blue-layer thickness of 10 nm showed the Commission Internationale de l'Eclairage (CIE) color coordinate of (0.33, 0.35), a high CRI of 81, and a moderate external quantum efficiency of 2% at a current density of $2.5\;mA/cm^2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.4
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• pp.232-237
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• 2014

We have fabricated white organic light-emitting diodes (OLEDs) by co-doping of red and blue phosphorescent guest emitters into the single host layer. Tris(2-phenyl-1-quinoline) iridium(III) [$Ir(phq)_3$] and iridium(III)bis[(4,6-di-fluorophenyl)-pyridinato-$N,C^{2^{\prime}}$]picolinate (FIrpic) were used as red and blue dopants, respectively. The effects of dopant concentration on the emission, carrier conduction and external quantum efficiency characteristics of the devices were investigated. The emissions on the guest emitters were attributed to the energy transfer to the guest emitters and direct excitation by trapping of the carriers on the guest molecules. The white OLED with 5% FIrpic and 2% $Ir(phq)_3$ exhibited a maximum external quantum efficiency of 19.9% and a maximum current efficiency of 45.2 cd/A.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.11
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• pp.910-915
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• 2012

We studied the emission characteristics of white phosphorescent organic light-emitting diodes (PHOLEDs), which were fabricated using a two-wavelength method. The best blue emitting OLED and red emitting OLED characteristics were obtained at a concentration of 12 vol.% FIrpic and 1 vol.% $Bt_2Ir$(acac) in UGH3, respectively. And the optimum thickness of the total emitting layer was 25 nm. To optimize emission characteristics of white PHOLEDs, white PHOLEDs with red/blue/red, blue/red, red/blue and co-doping emitting layer structures were fabricated using a host-dopant system. In case of white PHOLEDs with co-doping structure, the best efficiency was obtained at a structure UGH3: 12 vol. % FIrpic: 1 vol.% $Bt_2Ir$(acac) (25 nm). The maximum brightness, current efficiency, power efficiency, external quantum efficiency, and CIE (x, y) coordinate were 13,430 $cd/m^2$, 40.5 cd/A, 25.3 lm/W, 17 % and (0.49, 0.47) at 1,000 $cd/m^2$, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1050-1053
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• 2006

We fabricated white organic light emitting diodes consisting of three emitting layers of red-emitting DCM2 doped ${\alpha}-NPD$, blue-emitting DPVBi and green-emitting C545T doped Alq3. By optimizing the thickness of the hole-transport layer of ${\alpha}-NPD$ and the electron-transport layer of Alq3, efficient white OLEDs were obtained with a luminous efficiency of 4.40lm/W at luminance of $1000cd/m^2$, and a max-imum luminance of $51,939cd/m^2$

• Journal of the Korean Applied Science and Technology
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• v.29 no.3
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• pp.459-465
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• 2012

We had synthesized a green dopant material based on the binaphthyl group, 7,7'-(2,2'dimethoxy-1,1'-binaphthyl-3,3'-diyl) bis(4-(thiophen -2-yl) benzo[e][1,2,5] thiadiazole (TBT). We also fabricated the white organic light emitting diode (OLED) with a phosphorescent blue emitter : iridium(III)bis[(4,6-di-fluoropheny)-pyridinato -N,C2]picolinate (FIrpic) doped in N,N'-dicarbazolyl-3,5-benzene (mCP) of hole transport type host material and both TBT and bis(2-phenylquinolinato)- acetylacetonate iridium(III) (Ir(pq)2acac) doped in 1,3,5-tris(N-phenylbenzimidazole -2-yl)benzene (TPBi) of electron transport type host material. As a result, the property of white OLED using TBT, which demonstrated a maximum luminous efficiency and external quantum efficiency of 5.94 cd/A and 3.23 %, respectively. It also showed the pure white emission with Commission Internationale de I'Eclairage (CIE) coordinates of (0.34, 0.36) at 1000 nit.

• Journal of Information Display
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• v.9 no.2
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• pp.18-21
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• 2008

We report on white organic light-emitting diodes (WOLEDs) based on single white dopants, $Ir(pq)_2$($F_2$-ppy) and $Ir(F_2-ppy)_2$(pq), where $F_2$-ppy and pq are 2-(2,4-difluorophenyl) pyridine and 2-phenylquinoline, respectively. The similar phosphorescent lifetime of two ligands lead to luminescence emission in two ligands simultaneously. However, the emission color of the devices was reddish, because the energy was not transferred efficiently from the 4,4,N,N'-dicarbazolebiphenyl (CBP) to the $F_2$-ppy ligand, due to the small band gap of the CBP. Accordingly, we used 1,4-phenylenesis(triphenylsilane) (UGH2) with a large band gap, instead of CBP as the host material. As a result, it was possible to adjust the emission color by the host material. The luminous efficiency of the device with $Ir(F_2-ppy)_2$(pq) doped in UGH2 was about 11 cd/A at 0.06 cd/$m^2$.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1583-1586
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• 2006

All non-dopant white organic light-emitting diodes (WOLEDs) have been realized by using solid state highly fluorescent red bis(4-(N-(1- naphthyl)phenylamino)phenyl)fumaronitrile (NPAFN) and amorphous bipolar blue light-emitting 2-(4- diphenylamino)phenyl-5-(4-triphenylsilyl)phenyl- 1,3,4-oxadiazole (TPAOXD), together with well known green fluorophore tris(8- hydroxyquinolinato)aluminum $(Alq_3)$. The fabrication of multilayer WOLEDs did not involve the hard-tocontrol doping process. Two WOLEDs, Device I and II, different in layer thickness of $Alq_3$, 30 and 15 nm, respectively, emitted strong electroluminescence (EL) as intense as $25,000\;cd/m^2$. For practical solid state lighting application, EL intensity exceeding $1,000\;cd/m^2$ was achieved at current density of $18-19\;mA/cm^2$ or driving voltage of 6.5-8 V and the devices exhibited external quantum efficiency $({\eta}_{ext})$ of $2.6{\sim}2.9%$ corresponding to power efficiency $({\eta}_P)$ of $2.1{\sim}2.3\;lm/W$ at the required brightness.

• Transactions on Electrical and Electronic Materials
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• v.11 no.3
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• pp.145-148
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• 2010

White organic light emitting devices were fabricated to improve the stability through a structural change using the two peak emission method. The fabricated devices were composed of indium tin oxide (100 nm)/ $\alpha$-NPD (30 nm)/4,40-bis(2,20-diphenylvinyl)-1,10-biphenyl (DPVBi, d: variable)/DPVBi: Rubrene (40 nm)/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline(5 nm)/ $Alq_3$(5 nm)/ Al (100 nm). A DPVBi for blue emissions was used as the host material in the emitters. The doping concentration of the Rubrene was fixed at 2.0% (by weight). The white emission with Commission Internationale De L'Eclairage coordinates of (0.3342, 0.3439) occurred at 14 V with a thickness d of 1 nm. It was insensitive to the drive voltage, and the devices had a maximum luminance of $211\;cd/cm^2$. At 19 V, the current density and maximum external quantum efficiency were $173\;mAcm^2$ and 0.478%, respectively.