• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.456-459
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• 2002

This paper describes fabrication and characteristics of ceramic pressure sensor for working at high temperature. The proposed pressure sensor consists of a Ta-N thin-film, patterned on a Wheatstone bridge configuration, sputter deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.097~1.21mV/$V{\cdot}kgf/cm^2$ in the temperature range of $25{\sim}200^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

• Food Science and Preservation
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• v.1 no.2
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• pp.99-105
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• 1994

To convert the analog signal from the drying process into the digital signal, the interface circuit was designed and built. To measure the weight and temperature during drying process, strain gauge type load cell and temperature transducer composed of pt 100 $\Omega$ thermometers and wheatstone bridge circuits were built and used. The temperature control device was composed of photocoupler and triac. Microcomputer aided experimental convective drying system was built with above cricuits and devices. Drying characteristics of onions can be estimated using this system.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1422-1424
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• 1994

This paper deals with piezoresistive humidity sensor using polycrystalline silicon (Poly-Si ) with membrane in sensors of semiconductor. Poly-Si piezoresistors which have no temperature dependancy are deposited on silicon wafer, membrane is formed with micromachining technology, then polyimide is formed as a hygroscopic layer. Whereas the principle of conventional humidify sensors are based on the change in electrical properties of the material, the humidity induced volume change of a polyimide layer leads to a deformation of a silicon membrane in this case. This deformation is transformed into an output voltage by Poly-Si piezoresistive. Wheatstone bridge. Fabricated piezoresistive humidity sensors showed good linearity, response time, and long term stability.

• ETRI Journal
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• v.29 no.1
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• pp.70-78
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• 2007

A new low-voltage CMOS interface circuit with digital output for piezo-resistive transducer is proposed. An input current sensing configuration is used to detect change in piezo-resistance due to applied pressure and to allow low-voltage circuit operation. A simple 1-bit first-order delta-sigma modulator is used to produce an output digital bitstream. The proposed interface circuit is realized in a 0.35 ${\mu}m$ CMOS technology and draws less than 200 ${\mu}A$ from a single 1.5 V power supply voltage. Simulation results show that the circuit can achieve an equivalent output resolution of 9.67 bits with less than 0.23% non-linearity error.

• Journal of Institute of Control, Robotics and Systems
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• v.7 no.2
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• pp.146-151
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• 2001

The importance of sensing the force and torque with arbitrary direction and magnitude is becoming more crucial for robotic applications and manufacturing automations. Recently, several designs of a multi-axis force-torque sensor have been tried to sense this force and torque. This paper deals mainly with the signal processing of a six-axis force-torque sensor using cross-shaped elastic structures with circular holes. In this paper, we show principle of sensing force and torque, the signal processing methodology, and efficient methods of seeking strain gage positions in the sensor structure. The validity of the proposed method is shown via experiments.

• Journal of the Korean Institute of Intelligent Systems
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• v.11 no.9
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• pp.807-810
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• 2001

Election Weighting Machine is used an electronic scale which has many trouble because of broken load cells. In this paper, we propose an Intelligent Diagnosis System will for an electronic weighting machine using fuzzy logic. It s purpose be detect of the load cell s trouble. The electronic circuit of system, which call junction box , will be connected resistance in a series at circuit of Wheatstone Bridge for monitoring the condition of load cells.

• Journal of The Korean Astronomical Society
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• v.45 no.1
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• pp.19-24
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• 2012

Microthermal fluctuations are introduced by atmospheric turbulence very near the ground. In order to detect microthermal fluctuations at Fuxian Solar Observatory (FSO), a microthermal instrument has been developed. The microthermal instrument consists of a microthermal sensor, which is based on a Wheatstone bridge circuit and uses fine tungsten filaments as resistance temperature detectors, an associated signal processing unit, and a data collection, & communication subsystem. In this paper, after a brief introduction to surface layer seeing, we discuss the instrumentation behind the microthermal detector we have developed and then present the results obtained. The results of the evaluation indicate that the effect of the turbulent surface boundary layer to astronomical seeing would become sufficiently small when installing a telescope at a height of 16m or higher from the ground at FSO.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.790-794
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• 2003

This paper describes the fabrication and characteristics of ceramic thin film type pressure sensors based on Ta-N strain gauges for high temperature applications. Ta-N thin-film strain gauges are deposited onto a thermally oxidized Si diaphragm by RF sputtering in an argon-nitrogen atmos[here($N_2$ gas ratio: 8%, annealing condition: 90$0^{\circ}C$, 1 hr.), patterned on a wheatstone bridge configuration, and used as pressure sensing elements with a high stability and a high gauge factor. The sensitivity is 1.097 ～ 1.21 mV/Vㆍkgf/$\textrm{cm}^2$ in the temperature range of 25 ～ 200 $^{\circ}C$ and the maximum non-linearity resistance), non-linearity than existing Si piezoresistive pressure sensors. The fabricated ceramic thin-film type pressure sensor is expected to be usefully applied as pressure and load sensors that os operable under high-temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05a
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• pp.50-54
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• 2003

The output characteristics of thin film NiO/NiFe bilayered magnetoresistive device have been measured as a function of the direction of external magnetic field. Each layer was fabricated by rf magnetron sputtering method, and especially, the under layer, NiO, was fabricated under the in-situmagnetic field of about 1000Oe. The magnetoresistive devices were designed with the angle of 45degree between the direction of current of the device pattern and the induces magnetic field in the NiO film layer. The output of the devices had a good linearity when the devices were placed on the external magnetic field perpendicular to induced field direction and also 45 degree with the currenr path direction.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.4
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• pp.343-351
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• 2004

The flaw assessment method based on ${delta}_5$ parameter was recently proposed and put to the practical use. However: since it is almost impossible to measure the ${delta}_5$ by the existing commercial clip gager, we need to develope the specially designed gages which are suitable for that purpose. In this research, a double cantilever type ${delta}_5$ clip gage with the traveling distance of 4mm was developed by the finite element analysis and the construction of Wheatstone bridge circuit including strain gages. The linearity of developed ${delta}_5$ clip gage was evaluated by the MTS extensometer calibrator with the proper adapters which allow the 6s clip gage to sit on the calibrator. Consequently, the 6s clip gage revealed the good linearity between the output voltage and the traveling distance of gage.