• Title/Summary/Keyword: Wheatstone Bridge

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Understanding the Principles of Wheatstone Bridge Circuit (휘트스톤 브리지 회로의 원리에 대한 이해)

  • Choi, Byung-Hee;Ryu, Chang-Ha
    • Explosives and Blasting
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    • v.35 no.2
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    • pp.9-17
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    • 2017
  • The Wheatstone bridge is an important electrical circuit that is widely used to measure extremely small resistance changes in strain gages. The strain gages are attached to the structure or specimen whose deformation is to be detected. The Wheatstone bridge finds one of its major applications in the areas of static and dynamic strength tests for various engineering materials. In the split Hopkinson pressure bar (SHPB) system, for example, the bridge circuit is required to measure the dynamic strains of the incident and transmitted bars along which the stress wave propagates. In this article, the principles of the Wheatstone bridge circuit are in detail explained for easy reference during laboratory experiments associated with rock dynamics. Especially, the circuit arrangements of the quater, half, and full bridges are presented with their basic uses.

Wheastone-bridge type MR sensors of Si(001)/NiO(300 $\AA$)/NiFe bilayer system (Si(001)/NiO(300$\AA$)/NiFe계 휘스톤 브리지형 자기저항소자)

  • 이원재;민복기;송재성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.1050-1053
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    • 2001
  • There is great interest in developing magnetoresistance(MR) sensor, using ferromagnetic, electrically non-magnetic conducting and antiferromagnetic films, especially for the use in weak magnetic fields. Here, we report single and Wheatstone-bridge type of MR sensors made in Si(001)/HiO(300$\AA$)/NiFe bilayers. Angular dependence of MR profiles was measured in Si(001)/NiO(300$\AA$)/NiFe(450$\AA$) films as a function of an angle between current and applied field direction, also, linearity was determined. AMR characteristics of single MR sensors was well explained with single domain model. Good linearity in 45$^{\circ}$Wheatstone-bridge type of MR sensors consisting of 4 single MR sensors made in Si(001)/NiO(300$\AA$)/NiFe(450$\AA$) was shown in the range of about $\pm$50 Oe.

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Wheastone-bridge type MR sensors of Si(001)/NiO($300{\AA}$)/NiFe bilayer system (휘스톤브리지형 MR 센서제작 및 특성)

  • Lee, Won-Jae;Min, Bok-Ki;Song, Jae-Sung;Park, Tae-Gone
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.260-263
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    • 2002
  • There is great interest in developing magnetoresistance(MR) sensor, using ferromagnetic, electrically non-magnetic conducting and antiferromagnetic films, especially for the use in weak magnetic fields. Here, we report single and Wheatstone-bridge type of MR sensors made in Si(001)/NiO($300{\AA}$)/NiFe bilayers. Angular dependence of MR profiles was measured in Si(001)/NiO($300{\AA}$)/NiFe($450{\AA})$ films as a function of an angle between current and applied field direction, also, linearity was determined. AMR characteristics of single MR sensors was well explained with single domain model. Good linearity in $45^{\circ}$ Wheatstone-bridge type of MR sensors consisting of 4 single MR sensors made in Si(001)/NiO($300{\AA}$)/NiFe($450{\AA})$ was shown in the range of about ${\leq}{\pm}5$ Oe.

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Temperature compensation method of piezoresistive pressure sensor using compensating bridge (보상용 브릿지를 이용한 압저항형 압력센서의 온도보상 방법)

  • 손원소;이재곤;최시영
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.5
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    • pp.63-68
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    • 1998
  • The absolute pressure sensor using SDB wafer has been fabricated. the structure of the sensor consists of two wheatstone bridges and a diaphragm. One of the two wheatstone bridges is located on the edge of diaphragm, and the other is located on the center of diaphragm. The diaphragm cavity is sealted in vacuum (~10$^{5}$ Torr) to reduce the effect of temperature due to the vapor in the cavity on the sensitivity of pressure sensor. This is the minor method of temperature compensation method. In this experiment the main compensation method is to use the difference of the two bridge offset voltages. The drift of offset voltage with temperature is reduced by using this method so that temperature charcteristics is improved. In this method the temperature effect in the range of 22~100.deg. C was compensated over 80%.

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Development of the Dielectric sensor for the Cure monitoring of the high temperature Composites (고온 복합재료의 경화 모니터링을 위한 유전센서의 개발)

  • 김일영;최진경;최진호;이대길
    • Proceedings of the Korean Society For Composite Materials Conference
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    • 2000.11a
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    • pp.22-28
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    • 2000
  • The fiber reinforced composite materials is widely used in aircraft, space structures and robot arms because of high specific strength and high specific modulus. The on-line cure monitoring during the cure process of the composite materials has become an important research area for the better quality and productivity. In this paper, the dielectric circuit of the wheatstone bridge type for measuring the dissipation factor was designed and manufactured. Also, the dielectric sensor for the cure monitoring of the high temperature composites was developed. The residual thermal stresses of the dielectric sensor were analyzed by the finite element method and its dielectric characteristics under high temperature were evaluated. The on-line cure monitoring of the BMI resin was performed using the wheatstone bridge type circuit and developed high-temperature dielectric sensor.

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A Study on the Performance Test and Manufacture of the Dielectric Sensor for the Cure Monitoring of the High Temperature Composites (고온 복합재료의 경화 모니터링을 위한 고온 유전센서의 제작 및 성능평가에 관한 연구)

  • 김일영;최진호;이대길
    • Composites Research
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    • v.14 no.1
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    • pp.30-38
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    • 2001
  • As fiber reinforced composite materials are widely used in aircraft, space structures and robot arms, the on-line cure monitoring during the cure process of the composite materials has become an important research area for the better quality and productivity. In this paper, the dielectric circuit of the Wheatstone bridge type for measuring the dissipation factor during cure of thermsetting resin matrix composite materials was designed and manufactured. Also, the dielectric sensor for the cure monitoring of high temperature cure composites was developed and tested. The residual thermal stresses of the dielectric sensor during high temperature cure were analyzed by the finite element method and its dielectric characteristics at high temperature cure were analyzed by the finite element method and its dielectric characteristics at high temperature were evaluated. The on-line cure monitoring of the BMI(Bismaleimide) resin was performed using the developed Wheatstone bridge type circuit and the high-temperature dielectric sensor.

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The Study of Hinge Moment Measurement in Wind Tunnel Test Using Single Wheatstone Bridge Flexure (단일 휘트스톤 브리지 플렉셔를 이용한 풍동시험에서의 힌지모멘트 측정 연구)

  • Cho, Cheolyoung;Park, Jongho
    • Journal of the Korea Institute of Military Science and Technology
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    • v.19 no.4
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    • pp.476-482
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    • 2016
  • In this study, a method using single Wheatstone bridge flexure has been presented to measure hinge moment acting on control surfaces of wind tunnel models. The structural simplicity of the flexure reduces difficulty regarding gauging and wire-routing, and also makes it feasible to install flexures even inside thin wings. Some flexures were designed and fabricated under typical aerodynamic loads in wind tunnel test, and the strains on the flexure according to applied loads were compared with the result of the analysis by finite element method. The relation between applied loads and output signals showed good linearity, and the standard deviation on the residual errors from linear equation obtained by least square method was within 1.0 % of the maximum design moments. In addition, the FEM analysis on the thickness of load-connecting part of the flexure showed that the sensitivity was improved as the thickness became thin as much as desired to avoid buckling.