• Explosives and Blasting
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• v.35 no.2
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• pp.9-17
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• 2017

The Wheatstone bridge is an important electrical circuit that is widely used to measure extremely small resistance changes in strain gages. The strain gages are attached to the structure or specimen whose deformation is to be detected. The Wheatstone bridge finds one of its major applications in the areas of static and dynamic strength tests for various engineering materials. In the split Hopkinson pressure bar (SHPB) system, for example, the bridge circuit is required to measure the dynamic strains of the incident and transmitted bars along which the stress wave propagates. In this article, the principles of the Wheatstone bridge circuit are in detail explained for easy reference during laboratory experiments associated with rock dynamics. Especially, the circuit arrangements of the quater, half, and full bridges are presented with their basic uses.

• Proceedings of the Korean Magnestics Society Conference
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• 1999.04a
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• pp.34-35
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• 1999

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1050-1053
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• 2001

There is great interest in developing magnetoresistance(MR) sensor, using ferromagnetic, electrically non-magnetic conducting and antiferromagnetic films, especially for the use in weak magnetic fields. Here, we report single and Wheatstone-bridge type of MR sensors made in Si(001)/HiO(300$\AA$)/NiFe bilayers. Angular dependence of MR profiles was measured in Si(001)/NiO(300$\AA$)/NiFe(450$\AA$) films as a function of an angle between current and applied field direction, also, linearity was determined. AMR characteristics of single MR sensors was well explained with single domain model. Good linearity in 45$^{\circ}$Wheatstone-bridge type of MR sensors consisting of 4 single MR sensors made in Si(001)/NiO(300$\AA$)/NiFe(450$\AA$) was shown in the range of about $\pm$50 Oe.

• Journal of Sensor Science and Technology
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• v.33 no.5
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• pp.373-377
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• 2024

To increase the sensitivity of film-type level sensors for water-level measurements, a Wheatstone bridge comprising a half-bridge circuit with a new film-type level sensor design containing four resistors and two electrodes was employed. The proposed film-type level sensor included a temperature compensation feature and demonstrated improved sensitivity owing to a two-fold increase in the voltage output. Furthermore, a repetition error of less than 1.0% was observed for water levels. As the change in resistance varied linearly with the water level, a linear function was derived to represent their relation. Using this derived formula, water level measurements that were twice as precise as those yielded by commercial products were achieved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.260-263
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• 2002

There is great interest in developing magnetoresistance(MR) sensor, using ferromagnetic, electrically non-magnetic conducting and antiferromagnetic films, especially for the use in weak magnetic fields. Here, we report single and Wheatstone-bridge type of MR sensors made in Si(001)/NiO($300{\AA}$)/NiFe bilayers. Angular dependence of MR profiles was measured in Si(001)/NiO($300{\AA}$)/NiFe($450{\AA})$ films as a function of an angle between current and applied field direction, also, linearity was determined. AMR characteristics of single MR sensors was well explained with single domain model. Good linearity in $45^{\circ}$ Wheatstone-bridge type of MR sensors consisting of 4 single MR sensors made in Si(001)/NiO($300{\AA}$)/NiFe($450{\AA})$ was shown in the range of about ${\leq}{\pm}5$ Oe.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.63-68
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• 1998

The absolute pressure sensor using SDB wafer has been fabricated. the structure of the sensor consists of two wheatstone bridges and a diaphragm. One of the two wheatstone bridges is located on the edge of diaphragm, and the other is located on the center of diaphragm. The diaphragm cavity is sealted in vacuum (~10$^{5}$ Torr) to reduce the effect of temperature due to the vapor in the cavity on the sensitivity of pressure sensor. This is the minor method of temperature compensation method. In this experiment the main compensation method is to use the difference of the two bridge offset voltages. The drift of offset voltage with temperature is reduced by using this method so that temperature charcteristics is improved. In this method the temperature effect in the range of 22~100.deg. C was compensated over 80%.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2000.11a
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• pp.22-28
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• 2000

The fiber reinforced composite materials is widely used in aircraft, space structures and robot arms because of high specific strength and high specific modulus. The on-line cure monitoring during the cure process of the composite materials has become an important research area for the better quality and productivity. In this paper, the dielectric circuit of the wheatstone bridge type for measuring the dissipation factor was designed and manufactured. Also, the dielectric sensor for the cure monitoring of the high temperature composites was developed. The residual thermal stresses of the dielectric sensor were analyzed by the finite element method and its dielectric characteristics under high temperature were evaluated. The on-line cure monitoring of the BMI resin was performed using the wheatstone bridge type circuit and developed high-temperature dielectric sensor.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2012.05a
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• pp.63-64
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• 2012

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.1039-1040
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• 2011

• Composites Research
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• v.14 no.1
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• pp.30-38
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• 2001

As fiber reinforced composite materials are widely used in aircraft, space structures and robot arms, the on-line cure monitoring during the cure process of the composite materials has become an important research area for the better quality and productivity. In this paper, the dielectric circuit of the Wheatstone bridge type for measuring the dissipation factor during cure of thermsetting resin matrix composite materials was designed and manufactured. Also, the dielectric sensor for the cure monitoring of high temperature cure composites was developed and tested. The residual thermal stresses of the dielectric sensor during high temperature cure were analyzed by the finite element method and its dielectric characteristics at high temperature cure were analyzed by the finite element method and its dielectric characteristics at high temperature were evaluated. The on-line cure monitoring of the BMI(Bismaleimide) resin was performed using the developed Wheatstone bridge type circuit and the high-temperature dielectric sensor.