• 화약ㆍ발파
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• 제35권2호
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• pp.9-17
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• 2017

휘트스톤 브리지(Wheatstone bridge)는 변형률 게이지의 극도로 작은 저항 변화를 측정하는 데 널리 사용되는 중요한 전기회로의 하나이다. 변형률 게이지는 변형을 측정하고자 하는 구조물이나 시편에 부착한다. 휘트스톤 브리지는 다양한 공학재료에 대한 정적 혹은 동적 강도를 시험하는 분야에서 많이 사용되고 있다. 일례로, 스플릿 홉킨슨 압력봉(split Hopkinson pressure bar) 시스템에서 브리지 회로는 응력파가 전파되는 입사봉과 전달봉의 동적 변형률을 측정하는 데 필수적으로 사용된다. 본고에서는 암석동역학과 연관된 실험실 실험에서 쉽게 참고할 수 있도록 휘트스톤 브리지 회로의 원리를 상세히 설명하였다. 특히, 쿼터(quater), 하프(half) 및 풀(full) 브리지의 회로배열을 그 기본적인 용도와 함께 자세히 소개하였다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1999년도 춘계연구발표회 논문개요집
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• pp.34-35
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• 1999

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1050-1053
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• 2001

There is great interest in developing magnetoresistance(MR) sensor, using ferromagnetic, electrically non-magnetic conducting and antiferromagnetic films, especially for the use in weak magnetic fields. Here, we report single and Wheatstone-bridge type of MR sensors made in Si(001)/HiO(300$\AA$)/NiFe bilayers. Angular dependence of MR profiles was measured in Si(001)/NiO(300$\AA$)/NiFe(450$\AA$) films as a function of an angle between current and applied field direction, also, linearity was determined. AMR characteristics of single MR sensors was well explained with single domain model. Good linearity in 45$^{\circ}$Wheatstone-bridge type of MR sensors consisting of 4 single MR sensors made in Si(001)/NiO(300$\AA$)/NiFe(450$\AA$) was shown in the range of about $\pm$50 Oe.

• 센서학회지
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• 제33권5호
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• pp.373-377
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• 2024

To increase the sensitivity of film-type level sensors for water-level measurements, a Wheatstone bridge comprising a half-bridge circuit with a new film-type level sensor design containing four resistors and two electrodes was employed. The proposed film-type level sensor included a temperature compensation feature and demonstrated improved sensitivity owing to a two-fold increase in the voltage output. Furthermore, a repetition error of less than 1.0% was observed for water levels. As the change in resistance varied linearly with the water level, a linear function was derived to represent their relation. Using this derived formula, water level measurements that were twice as precise as those yielded by commercial products were achieved.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.260-263
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• 2002

There is great interest in developing magnetoresistance(MR) sensor, using ferromagnetic, electrically non-magnetic conducting and antiferromagnetic films, especially for the use in weak magnetic fields. Here, we report single and Wheatstone-bridge type of MR sensors made in Si(001)/NiO($300{\AA}$)/NiFe bilayers. Angular dependence of MR profiles was measured in Si(001)/NiO($300{\AA}$)/NiFe($450{\AA})$ films as a function of an angle between current and applied field direction, also, linearity was determined. AMR characteristics of single MR sensors was well explained with single domain model. Good linearity in $45^{\circ}$ Wheatstone-bridge type of MR sensors consisting of 4 single MR sensors made in Si(001)/NiO($300{\AA}$)/NiFe($450{\AA})$ was shown in the range of about ${\leq}{\pm}5$ Oe.

• 전자공학회논문지D
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• 제35D권5호
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• pp.63-68
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• 1998

The absolute pressure sensor using SDB wafer has been fabricated. the structure of the sensor consists of two wheatstone bridges and a diaphragm. One of the two wheatstone bridges is located on the edge of diaphragm, and the other is located on the center of diaphragm. The diaphragm cavity is sealted in vacuum (~10$^{5}$ Torr) to reduce the effect of temperature due to the vapor in the cavity on the sensitivity of pressure sensor. This is the minor method of temperature compensation method. In this experiment the main compensation method is to use the difference of the two bridge offset voltages. The drift of offset voltage with temperature is reduced by using this method so that temperature charcteristics is improved. In this method the temperature effect in the range of 22~100.deg. C was compensated over 80%.

• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2000년도 추계학술발표대회 논문집
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• pp.22-28
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• 2000

The fiber reinforced composite materials is widely used in aircraft, space structures and robot arms because of high specific strength and high specific modulus. The on-line cure monitoring during the cure process of the composite materials has become an important research area for the better quality and productivity. In this paper, the dielectric circuit of the wheatstone bridge type for measuring the dissipation factor was designed and manufactured. Also, the dielectric sensor for the cure monitoring of the high temperature composites was developed. The residual thermal stresses of the dielectric sensor were analyzed by the finite element method and its dielectric characteristics under high temperature were evaluated. The on-line cure monitoring of the BMI resin was performed using the wheatstone bridge type circuit and developed high-temperature dielectric sensor.

• 한국방사성폐기물학회:학술대회논문집
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• 한국방사성폐기물학회 2012년도 춘계학술논문요약집
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• pp.63-64
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• 2012

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2011년도 춘계학술대회 논문집
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• pp.1039-1040
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• 2011

• Composites Research
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• 제14권1호
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• pp.30-38
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• 2001

복합재료는 우수한 비강성, 비강도 특성 때문에 기존의 항공우주산업뿐만 아니라 로봇 팔. 공작기계 등에 널리 사용되고 있다. 복합재료 경화중의 온라인 모니터링기법은 생산성 향상 및 품질의 신뢰성 향상을 위하여 매우 중요한 연구분야로 대두되고 있다. 본 논문에서는 휘스톤 브리지식 유전회로를 설계하고 제작하였다. 또한 고온 경화 복합재료에 적용할 수 있는 고온 유전센서를 개발하여 그 성능을 평가하였다. 유한요소해석을 이용하여 유전 센서에 작용하는 열 잔류응력을 계산하였으며, 고온분위기 하에서 유전센서의 유전특성을 평가하였다. 이상에서 개발된 유전회로와 고온 유전센서를 이용하여 BMI(Blsmaleimlde) 수지의 경화모니터링을 수행하였다.