• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.88.1-88.1
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• 2012

Silicon nanowires (SiNWs), due to their unusual quantum-confinement effects that lead to superior electrical and optical properties compared to those of the bulk silicon, have been widely researched as a potential building block in a variety of novel electronic devices. The conventional means for the synthesis of SiNWs has been the vapor-liquid-solid method using chemical vapor deposition; however, this method is time consuming, environmentally unfriendly, and do not support vertical growth. As an alternate, the electroless etching method has been proposed, which uses metal catalysts contained in aqueous hydrofluoric acids (HF) for vertically etching the bulk silicon substrate. This new method can support large-area growth in a short time, and vertically aligned SiNWs with high aspect ratio can be readily synthesized with excellent reproducibility. Nonetheless, there still are rooms for improvement such as the poor surface characteristics that lead to degradation in electrical performance, and non-uniformity of the diameter and shapes of the synthesized SiNWs. Here, we report a facile method of SiNWs synthesis having uniform sizes, diameters, and shapes, which may be other than just cylindrical shapes using a modified nanosphere lithography technique. The diameters of the polystyrene nanospheres can be adjustable through varying the time of O2 plasma treatment, which serve as a mask template for metal deposition on a silicon substrate. After the removal of the nanospheres, SiNWs having the exact same shape as the mask are synthesized using wet etching technique in a solution of HF, hydrogen peroxide, and deionized water. Different electrical and optical characteristics were obtained according to the shapes and sizes of the SiNWs, which implies that they can serve specific purposes according to their types.

• Current Photovoltaic Research
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• v.3 no.3
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• pp.85-90
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• 2015

Two-step processes for preparing $Cu(In,Ga)Se_2$ absorber layers consist of precursor layer formation and subsequent annealing in a Se-containing atmosphere. Among the various deposition methods for precursor layer, the nonvacuum (wet) processes have been spotlighted as alternatives to vacuum-based methods due to their potential to realize low-cost, scalable PV devices. However, due to its porous nature, the precursor layer deposited on Mo substrate by nonvacuum methods often suffers from thick $MoSe_2$ formation during selenization under a high Se vapor pressure. On the contrary, selenization under a low Se pressure to avoid $MoSe_2$ formation typically leads to low crystal quality of absorber films. Although TiN has been reported as a diffusion barrier against Se, the additional sputtering to deposit TiN layer may induce the complexity of fabrication process and nullify the advantages of nonvacuum deposition of absorber film. In this work, Mo oxide layers via thermal oxidation of Mo substrate have been explored as an alternative diffusion barrier. The morphology and phase evolution was examined as a function of oxidation temperature. The resulting Mo/Mo oxides double layers were employed as a back contact electrode for $CuInSe_2$ solar cells and were found to effectively suppress the formation of $MoSe_2$ layer.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.249-249
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• 2015

Silver films have been of considerable interest for years due to their better performance relative to other metal films for engineering applications. A series of multi-layer silver coatings with different thickness (i.e. 0.3 um to 1.5 um) were prepared on Aluminium substrate containing copper undercoat by direct current (DC) magnetron sputtering method. For the comparative purpose, similar thickness silver coatings were prepared by electrolytic deposition method. Microstructural, morphological, and mechanical characteristics of the silver coatings were evaluated by means of scanning electron microscope (SEM), X-ray diffraction (XRD), Surface roughness test, microhardness test and nano-scratch test. From the results, it has been elucidated that the silver films prepared by DC magnetron sputtering method has superior properties in comparison to the wet coating method. On the other hand, DC magnetron sputtering method is relatively easier, faster, eco-friendly and more productive than the electrolytic deposition method that uses several kinds of hazardous chemicals for bath formulation. Therefore, a New Work Item Proposal (NWIP) for the test methods standardization of DC magnetron sputtered silver coatings has recently been proposed via KATS, Korea and a NP ballot is being progressed within a technical committee "ISO/TC107-metallic and other inorganic coating".

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.659-659
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• 2013

Recently, graphene has been intensively studied due to the fascinating physical, chemical and electrical properties. It shows high carrier mobility, high current density, and high thermal conductivity compare with conventional semiconductor materials even it has single atomic thickness. Especially, since graphene has fantastic electrical properties many researchers are believed that graphene will be replacing Si based technology. In order to realize it, we need to prepare the large and uniform graphene. Chemical vapor deposition (CVD) method is the most promising technique for synthesizing large and uniform graphene. Unfortunately, CVD method requires transfer process from metal catalyst. In transfer process, supporting polymer film (Such as poly (methyl methacrylate)) is widely used for protecting graphene. After transfer process, polymer layer is removed by organic solvents. However, it is impossible to remove it completely. These organic residues on graphene surface induce quality degradation of graphene since it disturbs movement of electrons. Thus, in order to get an intrinsic property of graphene completely remove of the organic residues is the most important. Here, we introduce modified wet graphene transfer method without PMMA. First of all, we grow the graphene from Cu foil using CVD method. And then, we deposited several metal films on graphene for transfer layer instead of PMMA. Finally, we fabricate graphene FET devices. Our approaches show low defect density and non-organic residues in comparison with PMMA coated graphene through Raman spectroscopy, SEM and AFM. In addition, clean graphene FET shows intrinsic electrical characteristic and high carrier mobility.

• Korean Journal of Materials Research
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• v.32 no.12
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• pp.522-527
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• 2022

Among efforts to improve techniques for the chemical vapor deposition of large-area and high-quality graphene films on transition metal substrates, being able to reliably transfer these atomistic membranes onto the desired substrate is a critical step for various practical uses, such as graphene-based electronic and photonic devices. However, the most used approach, the wet etching transfer process based on the complete etching of metal substrates, remains a great challenge. This is mainly due to the inevitable damage to the graphene, unintentional contamination of the graphene layer, and increased production cost and time. Here, we report the systematic study of an H₂ bubbling-assisted transfer technique for graphene films grown on Cu foils, which is nondestructive not only to the graphene film but also to the Cu substrate. Also, we demonstrate the origin of the graphene film tearing phenomenon induced by this H₂ bubbling-assisted transfer process. This study reveals that inherent features are produced by rolling Cu foil, which cause a saw-like corrugation in the poly(methyl methacrylate) (PMMA)/graphene stack when it is transferred onto the target substrate after the Cu foil is dissolved. During the PMMA removal stage, the graphene tearing mainly appears at the apexes of the corrugated PMMA/graphene stack, due to weak adhesion to the target substrate. To address this, we have developed a modified heat-press-assisted transfer technique that has much better control of both tearing and the formation of residues in the transferred graphene films.

• Composites Research
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• v.36 no.5
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• pp.377-382
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• 2023

To enhance the performance of graphene-based devices, it is of great importance to better understand the interfacial interaction of graphene with its underlying substrates. In this study, the adhesion energy of monolayer graphene placed on dielectric substrates was characterized using mode I fracture tests. Large-area monolayer graphene was synthesized on copper foil using chemical vapor deposition (CVD) with methane and hydrogen. The synthesized graphene was placed on target dielectric substrates using polymer-assisted wet transfer technique. The monolayer graphene placed on a substrate was mechanically delaminated from the dielectric substrate by mode I fracture tests using double cantilever beam configuration. The obtained force-displacement curves were analyzed to estimate the adhesion energies, showing 1.13 ± 0.12 J/m² for silicon dioxide and 2.90 ± 0.08 J/m² for silicon nitride. This work provides the quantitative measurement of the interfacial interactions of CVD-grown graphene with dielectric substrates.

• The Korean Journal of Pesticide Science
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• v.10 no.2
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• pp.91-98
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• 2006

The objective of this study was to compare dioxin contents in spinach, soil and air and to evaluate the relation of dioxin concentrations in crop and its cultural environment. Sample weighing for the precise peak detection in dioxin analysis was also determined. The fragmentogram of HpCDFs, and especially OCDF, indicated different pattern from that of TeCDD/F, PeCDD/Fs and HxCDDs/Fs, which showed the same pattern. In case of field culture spinach (wet sample 2 kg) in Japan, peak of OCDF could be detected clearly, while market spinach (wet sample 1 kg) showed the only baseline detection. The result makes it possible to suppose the fact that production place of market spinach was not contaminated with OCDF, but atmospheric pattern of production place was similar to that of open field sample. So we could decide that the sample of agricultural crops were needed more than 2 kg in wet weight for the evaluation of precise peak The total tendency of dioxin concentration levels in field culture spinach may be affected by OCDD and HCDF distributed in soil. However, on the whole the major factor seems to be the atmospheric deposition.

• Journal of Korean Society for Atmospheric Environment
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• v.13 no.5
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• pp.371-381
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• 1997

Precipitation sampls were collected in Chonju-city during October 1994 to September 1995 and were analysed for major ions (N $a^{+}$, $K^{+}$, $Ca^{2+}$, $Mg^{2+}$, C $l^{[-10]}$ , NO/$_3$, S $O_4$$^{2-}$) and trace metals (Al, Cd, Ni, Pb, Sr, Zn) in addition to pH, in order to understand the chemical characteristics of acid rain and to estimate the origin of the determined ions. Most rain showed a neutral or alkaline character, and only 35% had a pH lower than 5.6. S $O_4$$^{2-}$ and N $O_3$$^{[-10]}$ are identified as the primary contributors to precipitation acidity in this region. Neutralization of precipitation acidity occurs as a result of the dissolution of alkaline compounds containing $Ca^{2+}$, $Mg^{2+}$ and $K^{+}$. S $O_4$$^{2-}$ and N $O_3$$^{[-10]}$ precipitation concentrations exhibit a seasonal pattern in which higher concentrations are observed during spring months and lower concentrations during summer months. However, the seasonal behavior of $H^{+}$ concentrations differs from this pattern, in that the highest concentrations occur during autumn months, owing to the different influence of neutralization processes. In all rain, S $O_4$$^{2-}$ concentration exceeded NO/$_3$$^{[-10]}$ concentration. The contribution of maritime sources to the total S $O_4$$^{2-}$ concentration was very low or negligible. For rain strongly affacted by yellow sand, $Ca^{2+}$, $Mg^{2+}$ and $K^{+}$ ions show a sharp increase in concentration, reflecting the increased amount of dust and soil suspended in atmosphere. At the same time, S $O_4$$^{2-}$ and N $O_3$$^{[-10]}$ concentrations are at their highest levels while $H^{+}$ values are not comparably elevated, presumably beacause much of the acidity has been neutralized by alkaline substances. The seasonal variance of trace metal concentrations in rainwater is similar to that of major cations. The annual wet flux of acidic pollutants and trace metals wat calculated to be as follows: N $O_3$$^{[-10]}$ ; 2.32 g/$m^2$, S $O_4$$^{2-}$, 5.34 g/$m^2$, Al; 6.30 mg/$m^2$, Cd; 0.62 mg/$m^2$, Ni; 4.08 mg/$m^2$, Pb: 9.76 mg/$m^2$, Sr; 5.94 mg/$m^2$, Zn; 111 mg/$m^2$./$m^2$.

• Korean Chemical Engineering Research
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• v.61 no.4
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• pp.517-522
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• 2023

A chemical/mechanical durability test of polymer membrane evaluation method is used in which air and hydrogen are supplied to the proton exchange membrane fuel cell (PEMFC) and wet/dry is repeated in the open circuit voltage (OCV) state. In this protocol, when wet/dry is repeated, voltage increase/decrease is repeated, resulting in electrode degradation. When the membrane durability is excellent, the number of voltage changes increases and the evaluation is terminated due to electrode degradation, which may cause a problem that the original purpose of membrane durability evaluation cannot be performed. In this study, the same protocol as the department of energy (DOE) was used, but oxygen was used instead of air as the cathode gas, and the wet/dry time and flow rate were also increased to increase the chemical/mechanical degradation rate of the membrane, thereby shortening the durability evaluation time of the membrane to improve these problems. The durability test of the Nafion 211 membrane electrode assembly (MEA) was completed after 2,300 cycles by increasing the acceleration by 2.6 times using oxygen instead of air. This protocol also accelerated degradation of the membrane and accelerated degradation of the electrode catalyst, which also had the advantage of simultaneously evaluating the durability of the membrane and the electrode.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1852-1854
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• 1999

In order to enhance satellite communication system performance, filters are required with the characteristics of sharp skirt, low insertion loss, and high power handling capability. But the performance of microwave passive filters is significantly declined by the conduction losses, especially in case of planar structures using film conductors. By using high temperature superconducting(HTS) film material as the conductor, higher performance could be expected. We have designed and developed narrow bandpass filters using haripin-type superconducting microstrip line for satellite communication. High quality superconducting YBCO thin films have been grown on MgO substrates by pulsed laser deposition(PLD) The deposited YBCO films were patterned by conventional wet-etching process. The transition temperatures of these films had shown 86 - 89 K. The film thicknesses were about 500 nm. Experimental results are presented for the insertion loss and return loss of the filter at 60 K.