• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 2004.09a
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• pp.450-452
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• 2004

Using factor analysis and bivariate comparisons of major components in ground water, three geochemical processes were identified as controlling factors of ground water chemistry; 1) natural mineralization by water rock interactions, 2) effect of seawater which includes salinization by seawater near seashores and deposition of sea salt, and 3) nitrate contamination by N fertilization. Contribution of rainfall was also estimated from the measured composition of wet deposition. The geochemical processes were separated using total alkalinity as an indicator for natural mineralization, Cl for effect of seawater, and nitrate for N fertilization. Relatively high correlation of major components with nitrate suggests that nitrification of nitrogenous fertilizers significantly affects ground water chemistry. Total cations derived from nitrate sources have good linearity for nitrate in equivalent basis with a slope of 1.8, which is a mean of proton production coefficients in nitrification of two major compounds in nitrogenous fertilizers, ammonium and urea. Contribution of nitrate sources to base cations, Cl, and SO$_4$ in ground water was determined considering maximum contribution of natural mineralization to estimate a threshold of the effect of N fertilization for ground water chemistry, which shows W fertilization has a greatest effect than any other processes in ground water with nitrate concentration greater than 50 mg/L for Ca, Mg, Na and with concentration greater than 30 mg/L for Cl and SO$_4$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.3
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• pp.177-182
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• 2013

Transparent thin film transistors (TTFT) were fabricated on $N^+$ Si wafers. $SiO_2$, $Si_3N_4/SiO_2$ and $Al_2O_3/SiO_2$ grown on the wafers were used as gate insulators. The rf magnetron sputtered zinc tin oxide (ZTO) films were adopted as active layers. $N^+$ Si wafers were wet-oxidized to grow $SiO_2$. $Si_3N_4$ and $Al_2O_3$ films were deposited on the $SiO_2$ by plasma enhanced chemical vapor deposition (PECVD) and atomic layer deposition (ALD), respectively. The mobility, $I_{on}/I_{off}$ and subthreshold swing (SS) were obtained from the transfer characteristics of TTFTs. The properties of gate insulators were analyzed by comparing the characteristics of TTFTs. The property variation of the ZTO TTFTs with time were observed.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.90.2-90.2
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• 2013

Vertically-aligned silicon nanostructure arrays (SNAs) have been drawing much attention due to their useful electrical properties, large surface area, and quantum confinement effect. SNAs are typically fabricated by chemical vapor deposition, reactive ion etching, or wet chemical etching. Recently, metal-assisted chemical etching process, which is relatively simple and cost-effective, in combination with nanosphere lithography was recently demonstrated for vertical SNA fabrication with controlled SNA diameters, lengths, and densities. However, this method exhibits limitations in terms of large-area preparation of unperiodic nanostructures and SNA geometry tuning independent of inter-structure separation. In this work, we introduced the layerby- layer deposition of polyelectrolytes for holding uniformly dispersed polystyrene beads as mask and demonstrated the fabrication of well-dispersed vertical SNAs with controlled geometric parameters on large substrates. Additionally, we present a new means of building in vitro neuronal networks using vertical nanowire arrays. Primary culture of rat hippocampal neurons were deposited on the bare and conducting polymer-coated SNAs and maintained for several weeks while their viability remains for several weeks. Combined with the recently-developed transfection method via nanowire internalization, the patterned vertical nanostructures will contribute to understanding how synaptic connectivity and site-specific perturbation will affect global neuronal network function in an extant in vitro neuronal circuit.

• Nuclear Engineering and Technology
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• v.37 no.4
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• pp.385-390
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• 2005

The effect of the Wolsong Tritium Removal Facility on the change of tritium concentration in the soil water was assessed by introducing a dynamic compartment model. For the mathematical modeling, the tritium in the environment was thought to come from two different sources. Three global tritium cycling models were compared with the natural background concentration. The dynamic compartment model was used to model the behavior of the tritium from the nuclear power plants at the Wolsong site. The source term for the dynamic compartment model was calculated with the dry and wet deposition rates. The area around the Wolsong nuclear power plants was represented by the compartments. The mechanisms considered in deriving the transfer coefficients between the compartments were evaporation, runoff, infiltration, hydrodynamic dispersion, and groundwater flow. We predicted what the change of the tritium concentration around the Wolsong nuclear power plants would be after future operation of the tritium removal facility to show the applicability of the model. The results showed that the operation of the tritium removal facility would reduce the tritium concentration in topsoil water quickly.

• Journal of the Korean Vacuum Society
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• v.13 no.3
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• pp.114-119
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• 2004

Silicon Nitride thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) method at $550^{\circ}C$ using alternating exposures of $SiH_2Cl_2$ and $NH_3$, and the physical and electrical propeties of the deposited films were characterized. The thickness of the films was linearly increased with the number of deposition cycles, and the growth rate of the films was 0.13 nm/cycle with the reactant exposures of $3.0\times10^{9}$ L. The silicon nitride thin films deposited by Alf exhibited similar physical properties with the silicon nitride thin films deposited by low-pressure chemical vapor deposition (LPCVD) method in terms of refractive index and wet etch rate, lowering deposition temperature by more than 200 $^{\circ}C$. The ALD films showed the leakage current density of 0.79 nA/$\textrm{cm}^2$ at 3 MV/cm, which is lower than 6.95 nA/$\textrm{cm}^2$ of the LPCVD films under the same condition.

• Journal of Korean Society for Atmospheric Environment
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• v.15 no.2
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• pp.89-100
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• 1999

The rain water samples were collected at Chunchon and Seoul by using wet only automatic sampler from January 1996 through 1997. The daily base rain water samples collected over than 95% rainy events components, $SO_4^{-2}$, $NO_3^-$, $CI^-$, NH_4^+$, $Ca^{2+}$, $Mg^{2+}$, $Na^+$, and $K^+$, by ion chromatography. In 1996, about 77% of sampled rain water showed below pH 5.6 and the 60% of rain water was lower than pH 5.0. The volume weighted average pH was 4.7 at all sites. In 1997, the volume weighted average pH was 4.6 and 4.9 at Seoul and Chunchon, respectively. Among the rain water samples,, 87% and 55% fo samples showed below than pH 5.6 and 5.0, respectively. The pH value of Chunchon was significantly (p＜0.05) lower than Seoul at the rain samples for less than 20mm rainfall. However conductivity of the rain samples were 20.9$\mu$S/cm for 1996 and 27.7$\mu$S/cm for 1997 at Seoul, and 19.1$\mu$S/cm for 1996 and 14.1$\mu$S/cm for 1997 at Chunchon. $H_2SO_4$ and $HNO_3$ contributed 65.9% and 29.6% of free acidity at Seoul, respectively. The ratio of [$NO_3^-$]/[nss-$SO_4^{-2}$] were 0.43 at Seoul and 0.51 at Chunchon for rain samples for less than 20mm rainfall. The annual wet deposition of $CI^-$, $NO_3^-$, $SO_4^{-2}$, $H^+$M, $Na^+$, NH_4^+$, $K^+$, $Mg^{2+}$, and $Ca^{2+}$, respectively, 568.8kg/$ extrm{km}^2$, 1489.3kg/$\textrm{km}^2$, 3184.8kg/$\textrm{km}^2$, 20.9kg/$\textrm{km}^2$, 249.4kg/$\textrm{km}^2$, 1091.2kg/$\textrm{km}^2$, 189.8kg/ $\textrm{km}^2$, 90.2kg/$\textrm{km}^2$ and 702.4kg/$\textrm{km}^2$ at Seoul for 1996; 656.4kg/$\textrm{km}^2$, 2029.7kg/$\textrm{km}^2$, 3280.7kg/$\textrm{km}^2$, 27.2kg /$\textrm{km}^2$, 229.4kg/$\textrm{km}^2$, 1063.9kg/$\textrm{km}^2$, 106.9kg/$\textrm{km}^2$, 78.2kg/$\textrm{km}^2$, 645.3kg/$\textrm{km}^2$ at Seoul for 1997; 116.9kg/ $\textrm{km}^2$, 983.3kg/$\textrm{km}^2$, 1797.0kg/$\textrm{km}^2$, 21.4kg/$\textrm{km}^2$, 83.2kg/$\textrm{km}^2$, 648.1kg/$\textrm{km}^2$, 78.0kg/$\textrm{km}^2$, 22.2kg/$\textrm{km}^2$, 368.8kg/$\textrm{km}^2$ at chunchon for 1996; 100.2kg/$\textrm{km}^2$, 1077.6kg/$\textrm{km}^2$, 1754.0kg/$\textrm{km}^2$, 13.4kg/$\textrm{km}^2$, 146.0kg/$\textrm{km}^2$, 602.3kg/$\textrm{km}^2$, 88.8kg/$\textrm{km}^2$, 16.2kg/$\textrm{km}^2$ and 206.8kg/$\textrm{km}^2$ at chunchon for 1997.

• Journal of Korean Society for Atmospheric Environment
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• v.25 no.2
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• pp.99-107
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• 2009

This paper reviews the current status of mercury research on exposure and contamination, mercury emissions, emission limits and control technologies, long-range transport and deposition research, and mercury management policy in Korea. According to a monitoring of the Ministry of Environment and the Ministry of Health and Welfare, blood mercury levels among Koreans are $5{\sim}8$ times higher than those of U.S. and Germany. The most dominant source of exposure to mercury is through dietary intake. Emissions of mercury from coal-fired power plants are estimated 8.93 ton/year in 2004. Emissions of mercury from other important sources, such as waste incineration, steel and cement manufacturing and non-ferrous metal smelting operations are to be further investigated. A study on long-range transport of mercury suggests that the dry deposition flux over the Yellow Sea was much greater than those for other oceans. As a whole, the amounts of wet depositions of nitrogen and sulfur were 1.9 and 1.5 times larger than the amounts of dry depositions in each species, respectively. Substantial influence from China caused by high emissions in East China and westerly wind was possibly suggested. However, the influence from nitrogen emission in Korea was also confirmed. Korean Government has already adopted stringent emission limits on mercury for incinerators and boilers in 2005. However, emission limits for coal-fired power plants and non-ferrous metal smelters are rather relaxed. As the above mentioned two sources can be two most important sources of mercury emissions, control strategy for those sources are to be considered.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.262-262
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• 2016

최근 고해상도 디스플레이가 주목받으면서 기존 비정질 실리콘(a-Si)을 대체할 수 있는 재료에 관한 연구가 활발히 진행되고 있다. a-Si의 경우 간단한 공정 과정, 적은 생산비용, 대면적화가 가능하다는 장점이 있지만 전자 이동도가 매우 낮은 단점이 있다. 반면, 산화물 반도체는 비정질 상태에서 전자 이동도가 높으며 큰 밴드갭을 가지고 있어 투명한 특성을 나타낼 뿐만 아니라, 저온공정이 가능하여 기판의 제한이 없는 장점을 가지고 있다. 대표적으로 가장 널리 연구되고 있는 산화물 반도체는 a-IGZO(amorphous indium-gallium-zinc oxide)이다. 그러나 InZnO(IZO) 기반의 산화물 반도체에서 carrier suppressor 역할을 하는 Ga(gallium)은 수요에 대한 공급이 원활하지 못하여 비싸다는 단점이 있다. 그러므로 경제적이면서 a-IGZO와 유사한 전기적 특성을 나타낼 수 있는 suppressor 물질이 필요하다. 따라서 본 연구에서는 IZO 기반의 산화물 반도체에서 Ga을 Hf(hafnium), Zr(zirconium), Si(silicon)으로 대체하여 용액증착(solution-deposition) 공정으로 각각의 채널층을 형성한 back-gate type의 박막 트랜지스터(thin-film transistor, TFT) 소자를 제작하였다. 용액증착 공정은 물질의 비율을 자유롭게 조절할 수 있고, 대기압의 조건에서도 공정이 가능하기 때문에 짧은 공정시간과 저비용의 장점이 있다. 제작된 소자는 p-type Si 위에 게이트 절연막으로 100 nm의 열산화막이 성장된 기판을 사용하였다. 표준 RCA 클리닝 후에 각 solution 물질을 spin coating 방식으로 증착하였다. 이후, photolithography, develop, wet etching의 과정을 거쳐 채널층 패턴을 형성하였다. 또한, 산화물 반도체의 전기적 특성을 향상시키기 위해서 후속 열처리 과정(post deposition annealing, PDA)은 필수적이다. CTA 방식은 높은 열처리 온도와 긴 열처리 시간의 단점이 있다. 따라서, 본 연구에서는 $100^{\circ}C$ 이하의 낮은 온도와 짧은 열처리 시간의 장점을 가지는 MWI (microwave irradiation)를 후속 열처리로 진행하였다. 그 결과, 각 물질로 구현된 소자들은 기존 a-IGZO와 비교하여 적은 양의 carrier suppressor로도 우수한 전기적 특성 및 안정성을 얻을 수 있었다. 따라서, Si, Hf, Zr 기반의 산화물 반도체는 기존의 Ga을 대체하여 저비용으로 디스플레이를 구현할 수 있는 IZO 기반 재료로 기대된다.

• Journal of Korean Society of Forest Science
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• v.96 no.5
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• pp.503-509
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• 2007

The major objective of this study was to analyze the difference of the chemical characteristics of acid deposition in Quercus forests in Korea and Japan. The pH values of rainfall at the experimental forest of Kangwon National University (KS site) were higher than those at the Foresta Hills in Japan (JP site), and all chemical contents of throughfall and stemflow were much higher than those of rainfall in Quercus forest stands at the KS and JP site. The pH values, $Ca^{2+}$, $NO_3{^-}$ and $SO{_4}^{2-}$ concentration of throughfall and stemflow at the KS site showed seasonal variation. While at the JP site, the same pattern was shown in the pH values of throughfall and stemflow, however, did not show any difference among seasons. Also, the annual input of all nutrients in these two contrasting forests varied seasonally. These results can be used to predict the amounts of air pollutant that are washed off and leached by the rainfall and Yellow Sand (Asian dust), including NOx and SOx acid pollutants transported easterly from China in the spring. Therefore, it is necessary to quantify the inputs of dry and wet deposition throughout a full year to gain a more complete understanding of the effects of acid deposition on the nutrient cycles in these forest ecosystems.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.3
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• pp.344-349
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• 2006

The low-temperature processing is very important for fabrication of the very large scale ($60{\sim}70nm$) semiconductor devices since the submicron transistors are sensitive to the thermal budget. Hence, in this work, we propose a noble low-temperature LPCVD (Low-Pressure Chemical Vapor Deposition) process for the $SiO_2$ film and evaluate the electrical reliability of the LTO (Low-Temperature Oxide) by making the capacitors with ONO (Oxide/Nitride/Oxide) structure. The leak current of the LTO was similar to that of the high-temperature wet oxide until the electric field was lower than 5 MV/cm. However, when the electric field was higher, the LTO showed much better characteristics.