• Journal of the Society of Cosmetic Scientists of Korea
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• 제36권2호
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• pp.93-97
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• 2010

In this study, cationic guar polymer was selected from many cationic polymers currently using in shampoo and then was newly developed having 0.7 % above of nitrogen content and 190~200 cps of viscosity through various performance measurements. Wet combing ability, polymer substantivity, silicone deposition and panel test were evaluated for performance measurements. Cationic guar polymer that was invented from this study can optimize conditioning effects in shampoo.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.190-190
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• 2010

Zinc oxide is the most attractive material due to the large direct band gap (3.37 eV), excellent chemical and thermal stability, and large exciton binding energy (60 meV). Recently, ZnO nanorods were used as the high efficient antireflection coating layer of solar cells based on silicon (Si). In this reports, we studied the effects of rapid thermal annealing (RTA) treatment on optical properties of ZnO nanorods. For fabrication of ZnO nanorods, there are many methods such as hydrothermal method, sol-gel method, and metal organic chemical vapor deposition method. Among of them, we used the conventional wet chemical method which is simple and low temperature growth. In order to synthesize the ZnO nanorods, the ZnO films were deposited on Si substrate by RF magnetron sputtering at room temperature and the samples were dipped to aqua solution containing the zinc nitrate and hexamethylentetramines (HMT). The synthesis process was achieved in keeping with temperature of $90-95^{\circ}C$ and under constant stirring. The morphology of ZnO nanorods on glass and Si was characterized by scanning electron microscopy. For the analysis of antireflection performance, the reflectance and transmittance were measured by spectrophotometer. And for analyzing the effects of RTA treatment on ZnO nanorods, crystalline properties were investigated by X-ray diffraction measurements and optical properties was estimated by photoluminescence spectra.

• Korean Journal of Metals and Materials
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• 제48권5호
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• pp.462-468
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• 2010

Carbon Nanotubes (CNTs) have recently emerged as a material with outstanding properties. It has shown promising potential for applications in many engineering fields as electronic devices, thermal conductors, and light-weight composites. Researchers have investigated their use as reinforcements in themetal matrix composites of CNTs. In the present work, we decorated CNTs with Ni particles by electroless plating. The CNTs were wet-ball milled for various milling times with a nickel sulfate solution. The precipitated Ni particles were observed mainly by FESEM. In this study, the dispersion of the CNTs and Ni particles was improved with the addition of the surfactant. Also, as the CNTs were shortened and widened by an increased ball milling time, the size of the precipitated Ni particles increased. It was estimated that the CNTs were deformed and caused some defects on their surface during the ball milling process. Those defects were assumed to be heterogeneous nucleation sites for the Ni particles.

• Membrane Journal
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• 제33권1호
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• pp.1-12
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• 2023

In this review, surface modification methods of hydrophobic poly(tetrafluoroethylene) (PTFE) membrane are introduced and their improved hydrophilicity results are discussed. Fluoropolymer based membranes, represented by PTFE membranes have been used in various membrane separation processes, including membrane distillation, oil separation and gas separation. However, despite excellent physical properties such as chemical resistance, heat resistance and high mechanical strength, the strong hydrophobicity of PTFE membrane surface has become a challenging factor in expanding its membrane separation application. To improve the separation performance of PTFE membranes, wet chemical, hydrophilic coating, plasma, irradiation and atomic layer deposition are applied, modifying the surface property of PTFE membranes while maintaining their inherent properties.

• Journal of Korean Society for Atmospheric Environment
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• 제26권1호
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• pp.34-47
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• 2010

Long-range transport of air pollutants was simulated using Comprehensive Acid Deposition Model (CADM) and Yonsei University-Sulfuric Acid Deposition Model (YU-SADM). For the simulation, weather patterns that represent the four seasons were derived through a clustering analysis with 5-years of meteorological data. The simulation result showed that in spring, influenced by strong low pressure from China, air pollutants of moved to the Korean Peninsula. In summer, humid air moved into the Korean Peninsula across the Yellow Sea while the north pacific high pressure extended, making the concentration of air pollutants lower than that in the other seasons. In autumn, air pollutants were transported by the northwest wind caused by the movement of high pressure over the Yellow Sea, while in winter air pollutants were influenced by northwest winds from continental highs. The amount of air pollutants in each season showed that high amount of pollutants were transported in winter due to the strong northwest wind. The in-flows were 3 to 8 times higher than those of the other seasons, and out-flows were about as twice as high. The amount of wet deposition in summer and autumn increased significantly compared to the amount in the other seasons due to the increase of rainfall. Source-receptor relationship analysis for sulfur showed that 70 to 91 precent of the total deposition came from the self-contribution by the Korean Peninsula. In winter, contribution from China was about 25 percent of the total deposition which was higher amount than any other season.

• Journal of Ecology and Environment
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• 제29권3호
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• pp.305-321
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• 2006

Atmospheric Acid Deposition: Nitrogen Saturation of Forests: Volume weighted annual average wet deposition of nitroge at 33 sites in Korea during 1999-2004 ranged 7.28 to $21.05kgN{\cdot}ha^{-1}{\cdot}yr^{-1}$ with average $12.78kgN{\cdot}ha^{-1}{\cdot}yr^{-1}$, which values are similar level with nitrogen deposition of Europe and North America. The temperate forests that suffered long-term high atmospheric nitrogen deposition are gradually saturated with nitrogen. Such nitrogen saturated forest watersheds usually leach nitrate ion ($NO_3^-$) in stream water and soil solution. It may be likely that Korean forest ecosystems are saturated by much nitrogen deposition. In leaves with nitrogen saturation ratios of N/P, N/K and N/Mg are so enhanced that mineral nutrient system is disturbed, suffered easily frost damage and blight disease, reduced fine-root vitality and mycorrhizal activity. Consequently nitrogen saturated forests decrease primary productivity and finally become forest decline. Futhermore understory species are replaced the nitrophobous species by the nitrophilous one. In soil with nitrogen saturation uptake of methane ($CH_4$) is reduced and emission of nitrogen monoxide (NO) and nitrous oxide ($N_{2}O$) are increased, which gases are greenhouse gas accelerating global warming.

• Journal of the Korean Vacuum Society
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• 제12권4호
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• pp.263-268
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• 2003

Precise thickness control and excellent properties of silicon nitride thin films are essential for the next-generation semiconductor and display devices. In this study, silicon nitride thin films were deposited by batch-type atomic layer deposition (ALD) method using $SiC1_4$ and $NH_3$ as the precursors at temperatures ranging from 500 to $600^{\circ}C$. Thin film deposition using a batch-type ALD reactor was a layer-by-layer atomic growth by self-limiting surface reactions, and the thickness of the deposited film can be controlled by the number of deposition cycles. The silicon nitride thin films deposited by ALD method exhibited composition, refractive index and wet etch rate similar with those of the thin films deposited by low-pressure chemical vapor deposition method at $760^{\circ}C$. The addition of pyridine mixed with precursors increased deposition rate by 50%, however, the films deposited with pyridine was readily oxidized owing to its unstable structure, which is unsuitable for the application to semiconductor or display devices.

• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.50.1-50.1
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• 2009

Transparent conductive oxides (TCOs) play an important role in thin-film solar cells in terms of low cost and performance improvement. Al-doped ZnO (AZO) is a very promising material for thin-film solar cellfabrication because of the wide availability of its constituent raw materials and its low cost. In this study, AZO films were prepared by low pressurechemical vapor deposition (LPCVD) using trimethylaluminum (TMA), diethylzinc(DEZ), and water vapor. In order to improve the absorbance of light, atypical surface texturing method is wet etching of front electrode using chemical solution. Alternatively, LPCVD can create a rough surface during deposition. This "self-texturing" is a very useful technique, which can eliminate additional chemical texturing process. The introduction of a TMA doping source has a strong influence on resistivity and the diffusion of light in a wide wavelength range.The haze factor of AZO up to a value of 43 % at 600 nm was achieved without an additional surface texturing process by simple TMA doping. The use of AZO TCO resulted in energy conversion efficiencies of 7.7 % when it was applied to thep-i-n a-Si:H thin film solar cell, which was comparable to commercially available fluorine doped tin oxide ($SnO_2$:F).

• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.101-101
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• 2003

Al 박막의 화학증착(CVD)과 Al-Cu 합금박막의 물리증착(PVD)을 조합하는 CVD-PVD Al 공정은 수평방향의 배선과 수직방향의 via를 동시에 형성할 수 있으므로 공정단순화 및 생산원가절감 측면에서 장점이 있어서 DRAM 둥의 반도체 소자의 배선공정으로 매우 유망하다[1]. 본 연구에서는 CVD-PVD Al 공정을 이용하여 초고집적소자의 Al via와 Al 배선을 동시에 형성할 때 층간절연막의 영향을 조사하고 그 원인을 규명하였다. Al CVD를 위한 원료기체로는 dimethylaluminum hydride [($CH_3$)$_2$AlH]를 사용하였고 PVD는 38$0^{\circ}C$에서 실시하였다 층간절연막에 따른 CVD-PVD Al의 via hole 매립특성을 조사한 결과, high-density plasma(HDP) CVD oxide의 경우에는 via hole 매립특성이 우수하였으나, hydrogen silscsquioxane (HSQ)의 경우에는 매립특성이 우수하지 않아서 via 저항이 불균일 하였다. 이는 via 식각 후 wet cleaning 과정에서 HSQ에 흡수된 수분이 lamp를 이용한 degassing 공정에 의해서 완전히 제거되지 않아 CVD-PVD 공정 중에 탈착되어 Al reflow에 나쁜 영향을 미치기 때문으로 판단된다. CVD-PVD 공정 전에 40$0^{\circ}C$, $N_2$ 분위기에서 baking하여 HSQ 내의 수분을 충분히 제거함으로써 via 매립특성을 향상시킬 수 있었다. CVD-PVD Al 공정은 aspect ratio 10:1 이상의 via hole도 완벽하게 매립할 수 있었고 이에의해 제조된 Al 배선은 기존의 W plug 공정에 의해 제조된 배선에 비해 낮은 via 저항을 나타내었다.

• Journal of the Semiconductor & Display Technology
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• 제5권2호
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• pp.47-49
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• 2006

Various methods of making thin film is being used in semiconductor manufacturing process. The most common method in this field includes CVD(Chemical Vapor Deposition) and PVD(Physical Vapor Deposition). Thin film is deposited on both the backside and the frontside of wafers. The thin film deposited on the backside has poor thickness profile, and can contaminate wafers in the following processes. If wafers with the thin film remaining on the backside are immersed in batch type process tank, the thin film fall apart from the backside and contaminate the nearest wafer. Thus, it is necessary to etch the backside of the wafer selectively without etching the frontside, and chemical injection nozzle positioned under the wafer can perform the backside etching. In this study, the backside chemical injection nozzle with optimized chemical injection profile is built for single wafer tool. The evaluation of this nozzle, performed on $Si_3N_4$ layer deposited on the backside of the wafer, shows the etching rate uniformity of less than 5% at the etching rate of more than $1000{\AA}$.