• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.935-938
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• 1997

Recently, the minimum line width shows a tendency to decrease and the multi-level increase in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. But there are several defects in CMP such as micro-scratches, abrasive contaminations, and non-uniformity of polished wafer edges. Wet etching include of Spin-etching can improve he defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(INterlayer-Dielectric) was removed by CMP and wet-etching methods in order to investigate the superiority of wet etching mechanism. In the thin film wafer, the results were evaluated at a viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And pattern step height was also compared for planarization characteristics of the patterned wafer.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1893-1895
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• 2001

In this paper, novel release technique using wet etch is proposed. The results of this technique and the results of SAMs (Self-Assembled monolayers) coated after release using this technique are compared. Fabricated structure have 100 um in width and experimental length is from 100 um to 1 mm. Thickness of aluminum sacrificial layer is 2 um and structure thickness is 2.5 um. Cantilevers and bridges are fabricated with electroplated gold and silicon nitride deposited on substrate. An aluminium sacrificial layer was evaporated thermally and removed in various wet etching solutions. Detachment length of cantilever is 200 um and detachment length of bridge is 1 mm after isooctane rinsing. And the SAMs coating condition which is appropriate for gold and nitride are studied respectively.

• Bulletin of the Korean Chemical Society
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• v.31 no.11
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• pp.3252-3258
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• 2010

In this study, the effects of the various parameters of spinning and drawing processes on the properties of polyester full drawn yarn (FDY) prepared by steam processing during high-speed spinning were investigated using several techniques. The wet shrinkage ratio of the FDY was able to be manipulated by controlling the temperature and draw ratio. The FDY made using the steam high speed spinning technique exhibited identical properties (such as tenacity, elongation, and wet shrinkage ratio) to that of regular FDY, made using the spin-draw process. FDY prepared using the steam process during high-speed spinning showed excellent dyeability. The dye pick-up of the polyester yarn spun at high-speed spinning was found to be improved when dyed under an atmospheric pressure of $100^{\circ}C$. This result was the same as regular FDY dyed under a high pressure of $130^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.45 no.10
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• pp.589-593
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• 2008

The hydroxyapatite with different amounts of strontium was synthesized with wet chemical technique. The structural, morphological and chemical characterizations for the prepared hydroxyapatite with various strontium amounts were carried out with XRD, SEM, EDS, and FT-IR. Strontium is quantitatively incorporated into hydroxyapatite where its substitution for calcium provokes a well distribution in the EDS mapping and a linear shift of the infrared absorption bands of the hydroxyl and phosphate groups, coherent with the greater ionic radius of strontium.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.39 no.3
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• pp.12-23
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• 2007

Frequently spraying of natural starch slurry onto the formed wet web has been adopted to improve properties of paperboards. This conventional starch spraying technique, however, becomes less effective in strength improvement. In this study the effects of various factors including wet web dryness, quantity of starch slurry sprayed, and drying temperature on paperboard properties were investigated. Migration of starch granules into the webs appeared to cause a reduction in plybond strength when the web dryness was lower than this level. Wet webs should contain enough water to swell the starch granules, and at the same time they should be heated to a temperature high enough for complete cooking of the sprayed starches to occur. This suggested that preheating of the wet web can be employed to improve the plybond strength.

• Journal of Acupuncture Research
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• v.40 no.4
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• pp.351-355
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• 2023

Background: Wet cupping (WC) is an efficient and cost-effective technique for removing metabolic waste from the bloodstream via the skin. The study aimed to examine the effect of WC on cholesterol levels including total cholesterol (TC), high-density lipoprotein cholesterol (HDL-C), and low-density lipoprotein cholesterol (LDL-C) in a Sudanese population. Methods: In this prospective cross-sectional study, 30 participants undergoing regular WC therapy were enrolled. Blood samples collected twice: pre-WC therapy (case group) and 10-14 days afterward (controls). Results: Of the participants, 56.67% were male and 43.33% were female, aged 24-69. Pre-WC TC and LDL-C levels were significantly higher than the post-WC control group (p = 0.001). Conversely, HDL-C levels decreased significantly in the pre-WC cases compared to controls (p = 0.001). No significant sex-based difference in mean cholesterol levels (p > 0.05). Conclusions: After WC, males and females experienced significant reductions in TC and LDL-C, and significant increase in HDL-C.

• Bulletin of the Korean Chemical Society
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• v.32 no.1
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• pp.225-228
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• 2011

Poly(4-vinylpyridine)-supported $Br{\phi}nsted$ acids (P4VP-HX) were prepared by wet impregnation technique. These supported acids were found as efficient heterogeneous green catalysts for acetylation of alcohol, amine and phenol with different catalytic activities. The wide application of P4VP-HX as reusable solid acid catalyst in organic reactions is possible because of its simple preparation and handling, stability, simple work up procedure.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.5
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• pp.149-158
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• 2002

Recently, the minimum line width shows a tendency to decrease and the multi-level increases in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. However there are several defects in CMF, such as micro-scratches, abrasive contaminations and non-uniformity of polished wafer edges. Wet etching process including spin-etching can eliminate the defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(Interlayer-Dielectric) was removed by CMP and wet etching process using DHF(Diluted HF) in order to investigate the possibility of planrization by wet etching mechanism. In the thin film wafer, the results were evaluated from the viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And the pattern step heights were also compared for the purpose of planarity characterization of the patterned wafer. Moreover, Chemical polishing process which is the wet etching process with mechanical energy was introduced and evaluated for examining the characteristics of planarization.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.237-240
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• 2001

In this paper, we have presented processing technique about wet etching for silicon membrane construction formation. In order to make selective etching of backside silicon wafer, we used Si$_3$N$_4$ layer by PECVD(Plasma Enhanced Chemical Vapor Deposition). We have measured the surface thickness in backside silicon wafer after anisortropic wet etching with KOH:distilled water solutions. Through this experiment, we acquired the etching rate for 1.29${\mu}{\textrm}{m}$/min. The average rough of Si-membrane frontside and backside was 0.26${\mu}{\textrm}{m}$, 0.90${\mu}{\textrm}{m}$, respectively.

• Journal of the Korean Ceramic Society
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• v.42 no.10 s.281
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• pp.645-648
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• 2005

To fabricate a (100) silicon hard master, we used anisotropic wet etching for the embossing. The etching chemical for the sili­con wafer was a TMAH 25$\%$ solution. The anisotropic wet etching produces a smooth sidewall surface inclined at 54.7°, and the surface roughness of the fabricated master is about 1 nm. After spin coating an organic-inorganic sol-gel hybrid resin on a silicon substrate, we used the fabricated master to form patterns on the silicon substrate. Thus, we successfully obtained patterns via the hot embossing technique with the (100) silicon hard master. Moreover, by using a single hydrophobic surface treatment of the master, we succeeded in achieving uniform surface roughness of the embossed patterns for more than ten embossments.