• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.351-354
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• 2013

Thin-film transistors(TFTs) with silicon-zinc-tin-oxide(SiZnSnO, SZTO) channel layer are fabricated by rf sputtering method. Electrical properties were changed by different annealing treatment of dry annealing and wet annealing. This procedure improves electrical property especially, stability of oxide TFT. Improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the surfaces by annealing treatment. The threshold voltage ($V_{th}$) shifted toward positive as increasing Si contents in SZTO system. Because the Si has a lower standard electrode potential (SEP) than that that of Sn, Zn, resulting in the degeneration of the oxygen vacancy ($V_O$). As a result, the Si acts as carrier suppressor and oxygen binder in the SZTO as well as a $V_{th}$ controller, resulting in the enhancement of stability of TFTs.

• Korean Journal of Food Science and Technology
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• v.36 no.3
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• pp.393-397
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• 2004

Rice was steeped at elevated temperatures of $40,\;50,\;or\;60^{\circ}C$ for 2 hr, and physicochemical properties of starches isolated from wet-milled rice flour were investigated. Steeping at elevated temperatures slightly decreased lightness of rice starch, while increased yellowness and redness. Average granule size of rice starch was decreased by steeping treatment. Swelling power and solubility increased as temperature increased. Starch from rice steeped at $40^{\circ}C$ displayed highest swelling power and solubility. Differential scanning calorimetry data of starch obtained from steeped rice at $60^{\circ}C$ showed increased onset and peak temperatures, with narrower gelatinization temperature range, suggesting partial annealing effect. Pasting properties of starch measured by Rapid Visco-Analyzer indicated increased peak viscosity due to rice steeping at $40^{\circ}C$. Peak and breakdown viscosities decreased at $50\;and\;60^{\circ}C$, whereas setback and final viscosities increased.

• Journal of the Korean Chemical Society
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• v.62 no.2
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• pp.118-123
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• 2018

The hexagonal tungsten bronze $Cs_xWO_3$ nanoparticle was synthesized by a chemical coprecipitation method of ammonium tungstate and $Cs_2CO_3$ in acidic condition. This synthetic method for cesium tungsten bronze is reported for the first time as far as we know. The synthesized $Cs_xWO_3$ as precipitated showed a weak crystallinity of hexagonal unit cell with a crystallite size of about 4 nm without annealing. When the synthesized $Cs_xWO_3$ was annealed in $N_2$ atmosphere, the crystallinity and crystallite size systematically increased maintaining the typical hexagonal tungsten bronze structure as the annealing temperature increased. The analyzed Cs content in the bronze was about 0.3 vs W, which is very close to the theoretical maximum value, 1/3 in cesium tungsten bronze. According to XPS analysis, the reduced tungsten ions existed as both the forms of $W^{5+}$ and $W^{4+}$ and the contents systematically increased as the annealing temperature increased up to $800^{\circ}C$. The $Cs_xWO_3$ thin films on PET substrate were also prepared by a wet-coating method using the ball-milled solution of the annealed $Cs_xWO_3$ nanoparticles at various temperatures. The near-infrared shielding property of these thin films increased systematically as the annealing temperature increased up to $800^{\circ}C$ as expected with the increased contents of reduced tungsten ions.

• Polymer(Korea)
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• v.37 no.6
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• pp.730-735
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• 2013

The physical properties of poly(vinyl alcohol) (PVA) with polyamide-epichlorohydrin (PAE) for wet strength additives in paper industry were investigated. Upon introducing PAE to PVA, not only melting and crystallization enthalpy in DSC but also the area of diffraction peaks in XRD decreased, which represented the fact that PAE acted as a crosslinking agent for PVA. However, this crosslinking seemed to be physical crosslinking having relatively less bonding energy compared to chemical crosslinking since the crystallization in PVA was able to take place by thermal annealing. This physical crosslinking and crystallization by thermal annealing enhanced the thermal stability and mechanical strength in PVA and consequently, these improvements are desired in the paper manufacturing process to increase the dry and wet strength in the paper.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.150-150
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• 2008

본 연구에서는 Wet chemistry damage가 Nanopatterned p-ohmic electrode에 미치는 영향을 연구하였다. Nanopattern은 Metal clustering을 이용하여, P-GaN와 Ohmic형성에 유리한 Pd을 50$\AA$ 적층한 후 Rapid Thermal Annealing방법으로 $850^{\circ}C$, $N_2$분위기에서 3min열처리를 하여 Pd Clustering mask 를 제작하였다. Wet etching은 $85^{\circ}C$, $H_3PO_4$조건에서 시간에 따라 Sample을 Dipping하는 방법으로 시행하였다 Ohmic test를 위해서 Circular - Transmission line Model 방법을 이용하였으며, Atomic Force Microscopy과 Parameter Analyzer로 Nanopatterned GaN surface위에 형성된 Ni/ Au Contact에서의 전기적 분석과, 표면구조분석을 시행하였다. AFM결과 Wet처리시간에 따라서 Etching형상 및 Etch rate이 영향을 받는 것이 확인되었고, Ohmic test에서 Wet chemistry처리에 의한 Tunneling parameter와 Schottky Barrier Height가 크게 증/감함을 관찰하였다. 이러한 결과들은 Wet처리에 의해서 발생된 Defect가 GaN의 표면과 하부에서 발생되며, Deep acceptor trap 및 transfer거동과 밀접한 관련이 있음을 확인 할 수 있었다. 보다 자세한 Transport 및 Wet chemical처리영향에 관한 형성 Mechanism은 후에 I-V-T, I-V, C-V, AFM결과 들을 활용하여 발표할 예정이다.

• Journal of the Korean Ceramic Society
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• v.28 no.11
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• pp.892-896
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• 1991

The cyrstallization behavior of lead titanate powders prepared by sol-gel and coprecipitation techniques was investigated. The lead titanate precursors were derived from a mixed solution of lead nitrate and titanium tetrachloride at 4$0^{\circ}C$ to 43$^{\circ}C$ and pH of 9.00 to 9.75. The X-ray diffraction patterns of the dried gel and coprecipitated powders showed it to be amorphous. DTA runs of the powders indicated crystallization to occur at 475~48$0^{\circ}C$. However, the amorphous powders were partially crystallized at 400~45$0^{\circ}C$ with sufficient annealing time. The room temperature Raman spectra from heat-treated powders changed continuously from amorphous to crystalline state with increasing heat-treating temperature. By annealing coprecipitated powders, a dramatic change in the Raman spectra due to the structural relaxation as the annealing temperatures increased, was clearly visible. i.e., coprecipitated, gel, and crystalline structure, in turn.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.241.1-241.1
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• 2013

최근 고집적화된 금속-산화막 반도체 metal oxide semiconductor (MOS) 소자는 크기가 점점 작아짐에 따라 얇은 산화막과 다양한 High-K 물질과 전극에 대하여 연구되고 있다. 이러한 소자의 열적 안정성과 균일성을 얻기 위해 다양한 열처리 방법이 사용되고 있으며, 일반적인 열처리 방법으로는 conventional thermal annealing (CTA)과 rapid thermal annealing (RTA)이 많이 이용되고 있다. 본 실험에서는 microwave radiation에 의한 열처리로 소자의 특성을 개선시킬 수 있다는 사실을 확인하였고, 상대적으로 $100^{\circ}C$ 이하의 저온에서도 공정이 이루어지기 때문에 열에 의한 소자 특성의 열화를 억제할 수 있으며, 또한 짧은 처리 시간 및 공정의 단순화로 비용을 효과적으로 절감할 수 있다. 본 실험에서는 metal-oxide-silicon (MOS) 구조의 capacitor를 제작한 다음, 기존의 CTA나 RTA 처리가 아닌 microwave radiation을 실시하여 MOS capacitor의 전기적인 특성에 미치는 microwave radiation 효과를 평가하였다. 본 실험은 p-type Si 기판에 wet oxidation으로 300 nm 성장된 SiO2 산화막 위에 titanium/aluminium (Ti/Al) 금속 전극을 E-beam evaporator로 형성하여 capacitance-voltage (C-V) 특성 및 current-voltage (I-V) 특성을 평가하였다. 그 결과, microwave 처리를 통해 flat band voltage와 hysteresis 등이 개선되는 것을 확인하였고, microwave radiation 파워와 처리 시간을 최적화하였다. 또한 일반적인 CTA 열처리 소자와 비교하여 유사한 전기적 특성을 확인하였다. 이와 같은 microwave radiation 처리는 매우 낮은 온도에서 공정이 이루어짐에도 불구하고 시료 내에서의 microwave 에너지의 흡수가 CTA나 RTA 공정에서의 열에너지 흡수보다 훨씬 효율적으로 이루어지며, 결과적으로 산화막과 실리콘 기판의 계면 특성 개선에 매우 효과적이라는 것을 나타낸다. 따라서, microwave radiation 처리는 향후 저온공정을 요구하는 nano-scale MOSFET의 제작 및 저온 공정이 필수적인 display 소자 제작의 해결책으로 기대한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.340-340
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• 2012

최근 MOS 소자들이 게이트 산화막을 Mono-layer가 아닌 Multi-Layer을 사용하는 추세이다. Bulk와 High-k물질간의 Dangling Bond를 줄이기 위해 Passivation 층을 만드는 것을 예로 들 수 있다. 이러한 Double Layer의 쓰임이 많아지면서 계면에서의 Interface State Density의 영향도 커지게 되면서 이를 측정하는 방법에 대한 연구가 활발히 진행되고 있다. 본 연구에서는 $SiO_2$ Double Layer의 Interface State Density를 Conductance Method를 사용하여 구하는 연구를 진행하였다. Wet Oxidation과 Chemical Vapor Deposition (CVD) 공정을 이용하여 $SiO_2$ Double-layer로 증착한 후 Aluminium을 전극으로 하는 MOS-Cap 구조를 만들었다. 마지막 공정은 $450^{\circ}C$에서 30분 동안 Forming-Gas Annealing (FGA) 공정을 진행하였다. LCR meter를 이용하여 high frequency C-V를 측정한 후 North Carolina State University California Virtual Campus (NCSU CVC) 프로그램을 이용하여 Flatband Voltage를 구한 후에 Conductance Method를 측정하여 Dit를 측정하였다. 본 연구 결과 Double layer (Wet/CVD $SiO_2$)에 대해서 Conductance Method를 방법을 이용하여 Dit를 측정하는 것이 유효하다는 것을 확인 할 수 있었다. 본 실험은 앞으로 많이 쓰이고 측정될 Double layer (Wet/CVD $SiO_2$)에 대한 Interface State Density의 측정과 분석에 대한 방향을 제시하는데 도움이 될 것이라 판단된다.

• Korean Journal of Materials Research
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• v.3 no.4
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• pp.352-360
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• 1993

A nitride layer was df'posited on the thermal oxide layer by LPCVD process. ONO(oxidenitricle oxide) capacitors with various thickness of component layer wore fabricated by wet reoxidation of the nitride with and without anrwalmg treatment and their properties were investigated. As a result of observation on the refrative index and etching behavior of the ONO fIlms, the nitride layer OF 40 A thick ness was not so dense that the bottom oxide during the reoxidation process and the capability of securing the capacitance decreased. The conduction current in the ONO multl-Iayer dielctric film was reduced as the bottom(or top) oxide layer became thicker. However, in the case of oxide with thickness more than 50A, it merely plays a factor of reduction in capacitance, and the effect of barrier for hole injection was not so much increased. Annealing of the nitride laypr bpfore reoxidation did not show a grpat effects on the refractive index and capacitance of the film, however, the annealing process increased the breakdown voltage by 2${\cdot}$V.

• Journal of the Korean Society of Food Science and Nutrition
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• v.34 no.3
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• pp.414-419
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• 2005

Newly harvested milled rice and stored milled rice for 2 years were steeped at the elevated temperatures of 40, 50, and 60℃ for 2hr, and physicochemical properties of the wet-milled rice flour were investigated. The lightness of rice flour was slightly higher in the newly harvested milled-rice, while yellowness was higher in the stored milled rice. For both newly harvested and stored milled rice, WAI, WSI, and gel consistency increased as steeping temperature increased. The amylograph pasting properties indicated that increasing steeping temperature increased peak viscosity. The differential scanning calorimetry (DSC) results of the rice flour showed that increasing steeping temperature increased onset and peak temperatures, with reduced gelatinization enthalphy, suggesting partial annealing occured. Particle size of rice flour from newly harvested milled rice was larger than that from stored milled rice.