• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.926-929
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• 2007

A significant progress has been made in the characterization of zinc oxide (ZnO) semiconductor as a new semiconductor layer instead of amorphous Si semiconductor used in thin film transistor due to its high electron mobility at low deposition temperature which is quite suitable for flexible display and OLED devices. The wet pattering of ZnO is another important issue with regard to mass production of ZnO thin film transistor device. However, the wet behavior of ZnO thin film in aqueous wet etching solutions conventionally used un TFT industry has not been reported yet, in this work, wet corrosion behavior of RF magnetron sputtered ZnO thin film in various wet solutions such as phosphoric and nitric acid solutions was studied using by electrochemical analysis. The effects of deposition parameters such as RF power and oxygen partial pressure on corrosion rate are also examined.

• 한국전기전자재료학회논문지
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• 제26권3호
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• pp.177-182
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• 2013

Transparent thin film transistors (TTFT) were fabricated on $N^+$ Si wafers. $SiO_2$, $Si_3N_4/SiO_2$ and $Al_2O_3/SiO_2$ grown on the wafers were used as gate insulators. The rf magnetron sputtered zinc tin oxide (ZTO) films were adopted as active layers. $N^+$ Si wafers were wet-oxidized to grow $SiO_2$. $Si_3N_4$ and $Al_2O_3$ films were deposited on the $SiO_2$ by plasma enhanced chemical vapor deposition (PECVD) and atomic layer deposition (ALD), respectively. The mobility, $I_{on}/I_{off}$ and subthreshold swing (SS) were obtained from the transfer characteristics of TTFTs. The properties of gate insulators were analyzed by comparing the characteristics of TTFTs. The property variation of the ZTO TTFTs with time were observed.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 춘계총회,특별강연,심포지움,연구발표회
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• pp.72.2-72.2
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• 2000

• 한국세라믹학회지
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• 제51권2호
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• pp.121-126
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• 2014

The influence of a liquid medium duringa wet-milling process in the grinding and oxidation of silicon powder was investigated. Distilled water, dehydrated ethanol and diethylene glycol were used as the liquid media. The applied grinding times were 0.5, 3, and 12 h. Ground silicon powder samples were characterized by means of aparticle size analysis, scanning electron microscopy(SEM), x-ray powder diffraction (XRD), FT-IR spectroscopy and by a chemical composition analysis. From the results of the characterization process, we found that diethylene glycol is the most efficient liquid medium when silicon powder is ground using a wet-milling process. The FT-IR results show that the Si-O band intensity in an unground silicon powder is quite strongbecause oxygen becomes incorporated with silicon to form $SiO_2$ in air. By applying deionized water as a liquid medium for the grinding of silicon, the $SiO_2$ content increased from 4.12% to 31.7%. However, in the cases of dehydrated ethanol and diethylene glycol, it was found that the $SiO_2$ contents after grinding only changed insignificantly, from 4.12% to 5.91% and 5.28%, respectively.

• 한국재료학회지
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• 제11권8호
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• pp.636-640
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• 2001

PDP용 녹색 형광체의 발광특성을 개선시키기 위해 고안된 액상의 화학적 합성법을 사용하여 조성식이 $Zn_{2-x}$ $SiO_4$:xMn(x=0.05, 0.08)인 형광체를 입자크기가 0.5~2$\mu\textrm{m}$로 조절하여 제조하였다. 제조된 형광체 입자는 구상이며 잘 분산된 형상을 봉주었고, 고상반응법에 비해 상대적으로 낮은 $1080^{\circ}C$에서 willemite구조의 단일상을 얻을 수 있었다. 또한 진공 자외선 영역의 147 nm의 여기원을 사용하여 광발광 특성을 조사하였다. 입자의 크기가 1$\mu\textrm{m}$이고 Mn의 도핑양이 8mole%일 때, 상용 형광체와 비교하여 발광세기는 약 40% 향상되었고 색좌표는 x=0.24, y=0.69로 거의 일치하는 결과를 얻을 수 있었다. 측정된 형광체의 잔광시간은 7.8ms이었다.

• 한국재료학회지
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• 제11권8호
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• pp.363-363
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• 2001

PDP용 녹색 형광체의 발광특성을 개선시키기 위해 고안된 액상의 화학적 합성법을 사용하여 조성식이 $Zn_{2-x}$ $SiO_4$:xMn(x=0.05, 0.08)인 형광체를 입자크기가 0.5~2$\mu\textrm{m}$로 조절하여 제조하였다. 제조된 형광체 입자는 구상이며 잘 분산된 형상을 봉주었고, 고상반응법에 비해 상대적으로 낮은 $1080^{\circ}C$에서 willemite구조의 단일상을 얻을 수 있었다. 또한 진공 자외선 영역의 147 nm의 여기원을 사용하여 광발광 특성을 조사하였다. 입자의 크기가 1$\mu\textrm{m}$이고 Mn의 도핑양이 8mole%일 때, 상용 형광체와 비교하여 발광세기는 약 40% 향상되었고 색좌표는 x=0.24, y=0.69로 거의 일치하는 결과를 얻을 수 있었다. 측정된 형광체의 잔광시간은 7.8ms이었다.

• 한국세라믹학회지
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• 제29권10호
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• pp.822-826
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• 1992

SiO2 doped sapphire single crystals were grown by Verneuil method using feed material which prepared by adding SiO2 in Al2O3. Crystal growing were attempted with varing doping amount of SiO2 from 0.01 to 1.0 wt% and when the doping amount of SiO2 were 0.01~0.04 wt%, single crystals could be attained. Starting materials for feed powder were 99.99% purity alumina and extra pure SiO2 powder. Mixing these two materials by wet milling for 24 hours and drying the mixture and then was calcined at 900~110$0^{\circ}C$ for 2~4 hours. The grown crystals had yellowish color and were somewhat transparent. During growing process the flow range of oxygen was 5~7.5ι/min and of hydrogen was 13~25ι/min, the average growth rate was 7.0~11 mm/hr. The pressure of gases were fixed at 5psi. The color of crystal was appeared and mechanical property of sapphire was developed by doping of SiO2.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2004년도 추계학술발표회 발표논문집
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• pp.1051-1052
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• 2004

• 한국세라믹학회지
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• 제44권3호
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• pp.162-168
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• 2007

Silica wet gels were prepared ken water glass ($29\;wt%\;SiO_{2}$) by using Amberlite as a ion exchange resin. After washing in distilled water, the wet gels were further aged in a solution of TEOS/EtOH to strengthen of 3-dimensional network structure. As increase TEOS content in aging solution, BET surface area and porosity of the ambient dried silica aerogels were significantly decreased, and average pore diameter was also decreased 30 nm to -10 nm. Also, higher density and compressive strength were obtained in case of higher TEOS content. This is due to precipitation of $SiO_{2}$ nano particles by TEOS. Hence, TEOS addition plays an important role of both strengthening and stiffness of silica wet gel network. By adding over 30 vol% TEOS, a crack-free monolithic silica aerogel tiles were obtained and its density, compressive strength, and thermal conductivity were shown $0.232g/cm^{3}$, 7.3 MPa, and 0.029 W/mk, respectivly.

• Corrosion Science and Technology
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• 제7권6호
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• pp.315-318
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• 2008

The atmospheric corrosion performance of Al-alloying, Si-alloying and Al-Si-alloying steel were studied by wet/dry cyclic corrosion tests (CCT) at $30^{\circ}C$ and 60% relative humidity (RH). The corrosion electrolyte used for CCT was 0.052 wt% $NaHSO_{3}$ (pH~4) solution. The result of gravimetry demonstrated that Al-Si-bearing steels showed lower corrosion resistance than other rusted steels. But the rusted 0.7%Si-alloying steel showed a better corrosion resistance than rusted mild steel. Polarization curves demonstrated that Al-/Si-alloying and Al-Si-alloying improved the rest potential of steel at the initial stage; and accelerated the cathodic reduction and anodic dissolution after a rust layer formed on the surfaces of steels. XRD results showed that Al-Si-alloying decreased the volume fraction of $Fe_{3}O_{4}$ and $\alpha-FeOOH$. The recycle of acid accelerated the corrosion of steel at the initial stage. After the rust layer formed on the steel, the leak of rust destabilized the rust layer due to the dissolution of compound containing Al (such as $FeAl_{2}O_{4}$, $(Fe,\;Si)_{2}(Fe,\;Al)O_{4}$). Al-Si-alloying is hence not suitable for improving the anti-corrosion resistance of steel in industrial atmosphere.