• 복식
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• 제58권9호
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• pp.129-141
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• 2008

Jikgeum(woven with supplementary golden wefts) hyungbae(rank badge) of danryung(official uniform) excavated from Im Backryung'tomb($1498{\sim}1546$) of the Joseon dynasty($1392{\sim}1910$) at Goyang, Gyunggi-Do in 2007, was in a critical condition because of serious collapse of substrate in metal thread. For conservation of hyungbae, metal thread was examined by different scientific methods(Light Microscope, Scanning Electron Microscope and Energy Dispersive X-Rray Spectrometry(SEM-EDS), Fourier Transform Infrared Spectroscopy(FT-IR)). Analytical data showed that metal thread was gilt membrane strip composed of gold leaves and proteinaceous substrate which was probably parchment. To protect collapse of substrate, 1% solution of Paraloid B-72 was infilterated into substrate for consolidation of substrate and it was adhered to warp of fabric in hyungbae, before wet cleaning. After wet cleaning, the most of the gold leaves were restored, which was confirmed by both the examination with the naked eye and the microscopic examination.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2000년도 Proceedings of 5th International Joint Symposium on Microeletronics and Packaging
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• pp.57-64
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• 2000

As integrated circuits become more complex, the number of I/O connections per chip grow. Conventional wire-bonding, lead-frame mounting techniques are unable to keep up. The space saved by shrinking die size is lost when the die is packaged in a huge device with hundreds of leads. The solution is bumps; gold, conductive adhesive, but most importantly solder bumps. Virtually every semiconductor manufacturer in the world is using or planning to use bump technology fur their larger and more complex devices. Several wafer-bumping processes used in the manufacture of bumped wafer. Some of the more popular techniques are evaporative, stencil or screen printing, electroplating, electrodes nickel, solder jetting, stud bumping, decal transfer, punch and die, solder injection or extrusion, tacky dot process and ball placement. This paper will discuss the process steps for bumping wafers using these techniques. Critical cleaning is a requirement for each of these processes. Key contaminants that require removal are photoresist and flux residue. Removal of these contaminants requires wet processes, which will not attack, wafer metallization or passivation. research has focused on enhanced cleaning solutions that meet this critical cleaning requirement. Process parameters defining time, temperature, solvency and impingement energy required to solvate and remove residues from bumped wafers will be presented herein.

• 마이크로전자및패키징학회지
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• 제7권1호
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• pp.51-59
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• 2000

As integrated circuits become more complex, the number of I/O connections per chip grow. Conventional wire-bonding, lead-frame mounting techniques are unable to keep up. The space saved by shrinking die size is lost when the die is packaged in a huge device with hundreds of leads. The solution is bumps; gold, conductive adhesive, but most importantly solder bumps. Virtually every semiconductor manufacturer in the world is using or planning to use bump technology for their larger and more complex devices. Several wafer-bumping processes used in the manufacture of bumped wafer. Some of the more popular techniques are evaporative, stencil or screen printing, electroplating, electroless nickel, solder jetting, stud humping, decal transfer, punch and die, solder injection or extrusion, tacky dot process and ball placement. This paper will discuss the process steps for bumping wafers using these techniques. Critical cleaning is a requirement for each of these processes. Key contaminants that require removal are photoresist and flux residue. Removal of these contaminants requires wet processes, which will not attack, wafer metallization or passivation. Research has focused on enhanced cleaning solutions that meet this critical cleaning requirement. Process parameters defining time, temperature, solvency and impingement energy required to solvate and remove residues from bumped wafers will be presented herein.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.326-328
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• 1995

SiC buffer layers were grown on Si(100) substrates by ultra-high-vacuum electron cryclotron resonance plasma (UHV ECR plasma) from $CH_4/H_2$ mixture at 700$^{\circ}C$. The electron densities and temperature were measured by single probe. The axial plasma potentials measured by emissive probe had the double layer structure at positive substrate bias. Piranha cleaning was carried out as ex-situ wet cleaning. Clean and smooth silicon surface were prepared by in-situ hydrogen plasma cleaning at 540$^{\circ}C$. A short exposure to hydrogen plasma transforms the Si surface from 1$\times$1 to 2$\times$1 reconstruction. It was monitored by reflection high energy electron diffraction (RHEED). The defect densities were analysed by the dilute Schimmel etching. The results showed that the substrate bias is important factor in hydrogen plasma cleaning. The low base pressure ($5\times10^{-10}$ torr) restrains the $SiO_2$ growth on silicon surface. The grown layers showed different characteristics at various substrate bias. RHEED and K-ray Photoelectron spectroscopy study showed that grown layer was SiC.

• 한국정밀공학회지
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• 제28권10호
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• pp.1217-1223
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• 2011

In this paper, the dielectric barrier discharge plasma generator has been studied for producing of the high concentration ozone gas. Proposed plasma generator has the structure of extremely narrow discharge air gap(0.15mm) in order to realize the high electric field discharge. We investigate the performance of the dielectric barrier discharge plasma generator experimentally and the results show that the generator has very high ozone concentration characteristics of 13.7[wt%/$O_2$] at the oxygen flow rate of 1[${\ell}$/min] of each discharge cell. So, we confirmed that the proposed plasma generator is suitable for the high concentration ozone production facility of the eco-friendly ozone functional water cleaning system in the electronic components cleaning process.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권12호
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• pp.579-585
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• 2003

Recently the utilization of the ozone dissolved de-ionized water(DI-O3 water) in semiconductor wet cleaning process to replace the conventional RCA methods has been studied. In this paper, we propose the water-electrode type ozone generator which has the ozone gas characteristics of the high concentration and high purity to produce the high concentration DI-O3 water for the silicon wafer surface cleaning process. The ozone generator has the dual dielectric tube structure of silent discharge type and the water is both used to electrode and cooling water. We investigate the performance of the proposed ozone generator which has the design goal of the concentration of 7[wt%] and ozone generation quantity of 6[g/hr] at flow rate of 1[$\ell$/min). The experiment results show that the water electrode type ozone generator has the characteristics of 8.48[wt%] of concentration, 8.08[g/hr] of generation quantity and 76.2[g/kWh] of yield and it's possible to use the proposed ozone generator for the DI-O3 water cleaning process of silicon wafer surface.

• 한국정밀공학회지
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• 제26권5호
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• pp.150-156
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• 2009

The removal of tiny particles adhered to surfaces is one of the crucial prerequisite for a further increase in IC fabrication, large area displays and for the process in nanotechnology. Various cleaning techniques (wet chemical cleaning, scrubbing, pressurized jets and ultrasonic processes) currently used to clean critical surfaces are limited to removal of micrometer-sized particles. Therefore the removal of sub-micron sized particles from silicon wafers is of great interest. For this purpose various cleaning methods are currently under investigation. In this paper, we report on experiments on the cleaning effect of 100nm sized fluorescence particles on silicon wafer using the plasma shockwave occurred by femtosecond laser. The plasma shockwave is main effect of femtosecond laser cleaning to remove particles. The removal efficiency was dependent on the gap distance between laser focus and surface but in some case surface was damaged by excessive laser intensity. These experiments demonstrate the feasibility of femtosecond laser cleaning using 100nm size fluorescence particles on wafer.

• 한국의류학회지
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• 제35권1호
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• pp.115-124
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• 2011

This study provides an eco-friendly dyeing processing for chitosan fiber using Oenothera odorata jacquin as a dye. The effects of chemical mordants (Al, Cu, Fe) and natural mordant (Chestnut shell) on the color change for dyed chitosan fibers were measured by K/S values, L, $a^*$, $b^*$, H, V, C values, color fastness, and antimicrobial activity. The results are as follows. Dyeing conditions of Oenothera odorata jacquin on chitosan fibers were optimized to $70^{\circ}C$, 30 minutes and 200% on weight of fabric (o.w.f.). The pre-mordant concentration of aluminium (Al), copper (Cu) and iron (Fe) of chitosan fibers was optimized to 3% (o.w.f.) and 1% (o.w.f.), respectively. The post-mordant concentration of chemicals, such as Al, Cu and Fe, on chitosan was determined to 1% (o.w.f.). The hue of chitosan fibers by chemical mordants was measured to be reddish & yellow. The pre-mordant concentration of Chestnut shell of chitosan was optimized to 70% (o.w.f.). The post-mordant concentration of Chestnut shell on chitosan was determined to be 50% (o.w.f.). The hue of chitosan fibers by Chestnut shell mordant was measured to be reddish & yellow. The wet cleaning fastness of chitosan fibers was improved by a pre-mordant that used chemical mordants. In the case of the Chestnut shell mordant, the wet cleaning fastness was improved by a post-mordant. The dry cleaning fastness of chitosan fibers was excellent regardless of mordants and mordant methods. The antimicrobial activity of the chitosan fiber was shown at 99.9% and its excellent qualities remained after the dyeing and mordant processing.

• 한국진공학회지
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• 제7권3호
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• pp.169-175
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• 1998

HBr/$Cl_2/He-O_2$ 반응 기체를 이용한 반응성 이온 식각후, 폴리실리콘 표면에 형성된 잔류막을 x-선 광전자 분광법(x-ray photoelectron spectroscopy, XPS)과 전자 현미경 (scanning electron mocroscopy, SEM)을 이용하여 관찰하였다. 그 결과 잔류물은 패턴된 폴 리실리콘의 맨 윗부분에 자존하고 있었으며, 화학 결합 상태는 실리콘 산화물임이 밝혀졌다. 잔류물인 실리콘 산화물의 형성 메카니즘을 규명하기 위하여 원래의 혼합 기체 성분중 한가 지씩의 반응 기체를 제외시켜 가면서 실험하였다. 비록 플라즈마 성질이 다를지라도, 잔류물 은 산소의 존재하에서 잘 형성됨을 알 수 있었는데, 이는 휘발성이 낮은 실리콘-할로겐 화 합물이 산소에 의해 산화됨으로써 형성되는 것으로 이해하게 되었다. 또한 반응성 이온 식 각후 형성된 잔류층은 소자의 전기적 특성과 후처리 공정에 영향을 미치는 것으로 알려져 있어서, 이를 제거하기 위해 습식과 건식 후처리 공정을 도입하여 비교하였다. 그 결과 건식 공정의 경우 기체에 의해 새로운 잔류물이 형성됨을 XPS를 통하여 관찰하였다. 따라서 잔 류물을 제거하고 깨끗한 표면을 얻기 위해서는 습식 공정이 더 적합함을 알았다.

• 청정기술
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• 제15권2호
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• pp.81-90
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• 2009

본 연구에서는 산업체에서 대체 세정제를 객관적이고 체계적으로 선정하는데 도움을 주고자 여러 가지 세정성 평가방법을 실험을 통하여 비교 평가하였다. 세정성 평가방법으로는 중량법, OSEE (optically simulated electron emission)법, 접촉각법과 FTIR, UV-VIS, HPLC와 같은 정밀분석기기를 이용한 분석법을 사용하여 flux, solder, grease 등의 오염물질에 대한 세정성 평가를 수행하였다. 그 결과 중량법은 쉽고 간단하게 세정제의 세정효율을 측정할 수 있었지만 중량측정의 한계로 정밀측정이 어려웠다. 반면에 OSEE법은 세정제의 세정성 평가를 빠르고 정밀하게 수행할 수 있었다. 접촉각 측정법은 피세정물 표면에 오염물질과 세정제에 의한 얇은 친유성 막의 형성으로 인하여 접촉각 변화에 영향을 주기 때문에 세정성 평가에 특별한 주의가 요구되었다. 중량법으로 수행하기 어려운 정밀세정성 평가의 경우 UV-VIS, FTIR, HPLC와 같은 정밀분석기기를 이용하여 피세정물에 잔류한 flux, solder, grease 등의 극미량의 오염물을 특수 용제로 추출하여 아주 작은 농도의 오염물을 정량분석할 수 있었다.