• Title/Summary/Keyword: Welding film

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Effects of Hardeners on the Low-Temperature Snap Cure Behaviors of Epoxy Adhesives for Flip Chip Bonding (플립칩용 에폭시 접착제의 저온 속경화 거동에 미치는 경화제의 영향)

  • Choi, Won-Jung;Yoo, Se-Hoon;Lee, Hyo-Soo;Kim, Mok-Soon;Kim, Jun-Ki
    • Korean Journal of Materials Research
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    • v.22 no.9
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    • pp.454-458
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    • 2012
  • Various adhesive materials are used in flip chip packaging for electrical interconnection and structural reinforcement. In cases of COF(chip on film) packages, low temperature bonding adhesive is currently needed for the utilization of low thermal resistance substrate films, such as PEN(polyethylene naphthalate) and PET(polyethylene terephthalate). In this study, the effects of anhydride and dihydrazide hardeners on the low-temperature snap cure behavior of epoxy based non-conductive pastes(NCPs) were investigated to reduce flip chip bonding temperature. Dynamic DSC(differential scanning calorimetry) and isothermal DEA(dielectric analysis) results showed that the curing rate of MHHPA(hexahydro-4-methylphthalic anhydride) at $160^{\circ}C$ was faster than that of ADH(adipic dihydrazide) when considering the onset and peak curing temperatures. In a die shear test performed after flip chip bonding, however, ADH-containing formulations indicated faster trends in reaching saturated bond strength values due to the post curing effect. More enhanced HAST(highly accelerated stress test) reliability could be achieved in an assembly having a higher initial bond strength and, thus, MHHPA is considered to be a more effective hardener than ADH for low temperature snap cure NCPs.

Reliability of COF Flip-chip Package using NCP (NCP 적용 COF 플립칩 패키지의 신뢰성)

  • Min, Kyung-Eun;Lee, Jun-Sik;Jeon, Je-Seog;Kim, Mok-Soon;Kim, Jun-Ki
    • Proceedings of the KWS Conference
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    • 2010.05a
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    • pp.74-74
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    • 2010
  • 모바일 정보통신기기를 중심으로 전자패키지의 초소형화, 고집적화를 위해 플립칩 공법의 적용이 증가되고 있는 추세이다. 플립칩 패키징 접합소재로는 솔더, ICA(Isotropic Conductive Adhesive), ACA(Anisotropic Conductive Adhesive), NCA(Non Conductive Adhesive) 등과 같은 다양한 접합소재가 사용되고 있다. 최근에는 언더필을 사용하는 플립칩 공법보다 미세피치 대응성을 위해 NCP를 이용한 플립칩 공법에 대한 요구가 증가되고 있는데, NCP의 상용화를 위해서는 공정성과 함께 신뢰성 확보가 필요하다. 본 연구에서는 LDI(LCD drive IC) 모듈을 위한 COF(Chip-on-Film) 플립칩 패키징용 NCP 포뮬레이션을 개발하고 이를 적용한 COF 패키지의 신뢰성을 조사하였다. 테스트베드는 면적 $1.2{\times}0.9mm$, 두께 $470{\mu}m$, 접속피치 $25{\mu}m$의 Au범프가 형성된 플리칩 실리콘다이와 접속패드가 Sn으로 finish된 폴리이미드 재질의 flexible 기판을 사용하였다. NCP는 에폭시 레진과 산무수물계 경화제, 이미다졸계 촉매제를 사용하여 다양하게 포뮬레이션을 하였다. DSC(Differential Scanning Calorimeter), TGA(Thermogravimetric Analysis), DEA(Dielectric Analysis) 등의 열분석장비를 이용하여 NCP의 물성과 경화거동을 확인하였으며, 본딩 후에는 보이드를 평가하고 Peel 강도를 측정하였다. 최적의 공정으로 제작된 COF 패키지에 대한 HTS (High Temperature Stress), TC (Thermal Cycling), PCT (Pressure Cooker Test)등의 신뢰성 시험을 수행한 결과 양산 적용 가능 수준의 신뢰성을 갖는 것을 확인할 수 있었다.

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A Development of Welding Information Management and Defect Inspection Platform based on Artificial Intelligent for Shipbuilding and Maritime Industry (인공지능 기반 조선해양 용접 품질 정보 관리 및 결함 검사 플랫폼 개발)

  • Hwang, Hun-Gyu;Kim, Bae-Sung;Woo, Yun-Tae;Yoon, Young-Wook;Shin, Sung-chul;Oh, Sang-jin
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.25 no.2
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    • pp.193-201
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    • 2021
  • The welding has a high proportion of the production and drying of ships or offshore plants. Non-destructive testing is carried out to verify the quality of welds in Korea, radiography test (RT) is mainly used. Currently, most shipyards adopt analog-type techniques to print the films through the shoot of welding parts. Therefore, the time required from radiography test to pass or fail judgment is long and complex, and is being manually carried out by qualified inspectors. To improve this problem, this paper covers a platform for scanning and digitalizing RT films occurring in shipyards with high resolution, accumulating them in management servers, and applying artificial intelligence (AI) technology to detect welding defects. To do this, we describe the process of designing and developing RT film scanning equipment, welding inspection information integrated management platform, fault reading algorithms, visualization software, and testing and verification of each developed element in conjunction.

Technique development of Bi-2212/2223 superconductor thick film manufacturing by plasma spraying and heat treatment (플라즈마 용사 및 열처리 공정을 통한 Bi-2212/2223 초전도체 thick film 제조의 기술 개발)

  • Lee, Seon-Hong;Cho, Sang-Hum;Ko, Young-Bong;Park, Kyeung-Chae
    • Proceedings of the KWS Conference
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    • 2005.11a
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    • pp.262-264
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    • 2005
  • $Bi_{2}Sr_{2}CaCu_{2}O_{x}$(Bi-2212) and $Bi_{2}Sr_{2}Ca_{2}Cu_{3}O_{y}$(Bi-2223) high-$T_{c}$ superconductor(HTS) coating have been prepared by plasma spraying and heaat treatment. The Bi-2212 HTS coating later is synthesized through the peritectic reaction between Sr-Ca-Cu oxide coating layer and Bi-Cu oxide coating later, and $Bi_{2}Sr_{2}CaCu_{2}O_{y}$(Bi-2212) superconducting phase grow by partial melting process. The superconducting characteristic depends strongly on the conditions of the partial melting process. the Bi-2212 HTS layer consists of the whiskers grown in the diffusion direction. Above the 2212 layer, Bi-2223 phase and secondary phase was observed. The secondary phase is distributed uniformly over the whole surface. This is caused to the microcrack on the coatings surface. Despite everything, the film shows superconducting with an onset $T_{c}$ of about 115K. There are two changes steps. One changes (1step) at 115K is due to the diamagnetism of the Bi-2223 phase and the other changes (2step) at 78K is due to the diamagnetism of the Bi-2212 phase.

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Plasma Electrolytic Oxidation in Surface Modification of Metals for Electronics

  • Sharma, Mukesh Kumar;Jang, Youngjoo;Kim, Jongmin;Kim, Hyungtae;Jung, Jae Pil
    • Journal of Welding and Joining
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    • v.32 no.3
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    • pp.27-33
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    • 2014
  • This paper presents a brief summary on a relatively new plasma aided electrolytic surface treatment process for light metals. A brief discussion regarding the advantages, principle, process parameters and applications of this process is discussed. The process owes its origin to Sluginov who discovered an arc discharge phenomenon in electrolysis in 1880. A similar process was studied and developed by Markov and coworkers in 1970s who successfully deposited an oxide film on aluminium. Several investigation thereafter lead to the establishment of suitable process parameters for deposition of a crystalline oxide film of more than $100{\mu}m$ thickness on the surface of light metals such as aluminium, titanium and magnesium. This process nowadays goes by several names such as plasma electrolytic oxidation (PEO), micro-arc oxidation (MOA), anodic spark deposition (ASD) etc. Several startups and surface treatment companies have taken up the process and deployed it successfully in a range of products, from military grade rifles to common off road sprockets. However, there are certain limitations to this technology such as the formation of an outer porous oxide layer, especially in case of magnesium which displays a Piling Bedworth ratio of less than one and thus an inherent non protective oxide. This can be treated further but adds to the cost of the process. Overall, it can be said the PEO process offers a better solution than the conventional coating processes. It offers advantages considering the fact that he electrolyte used in PEO process is environmental friendly and the temperature control is not as strict as in case of other surface treatment processes.

Oxidation Effect on the Critical Velocity of Pure Al Feedstock Deposition in the Kinetic Spraying Process (저온분사 공정에서 알루미늄 분말의 산화가 임계 적층 속도에 미치는 영향)

  • Kang, Ki-Cheol;Yoon, Sang-Hoon;Ji, Youl-Gwun;Lee, Chang-Hee
    • Journal of Welding and Joining
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    • v.25 no.4
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    • pp.35-41
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    • 2007
  • In kinetic spraying process, the critical velocity is an important criterion which determines the deposition of a feedstock particle onto the substrate. In other studies, it was experimentally and numerically proven that the critical velocity is determined by the physical and mechanical properties and the state of materials such as initial temperature, size and the extent of oxidation. Compared to un-oxidized feedstock, oxidized feedstock required a greater kinetic energy of in-flight particle to break away oxide film during impact. The oxide film formed on the surface of particle and substrate is of a relatively higher brittleness and hardness than those of general metals. Because of its physical characteristics, the oxide significantly affected the deposition behavior and critical velocity. In this study, in order to investigate the effects of oxidation on the deposition behavior and critical velocity of feedstock, oxygen contents of Al feedstock were artificially controlled, individual particle impact tests were carried out and the velocities of in-flight Al feedstock was measured for a wide range of process gas conditions. As a result, as the oxygen contents of Al feedstock increased, the critical velocity increased.

Hot Ductility Behavior and Hot Cracking Susceptibility of Type 303 Austenitic Stainless Steel(1) -Hot ductility Behavior- (303 오스테나이트계 스테인레스강의 고온연성거동과 고온균열감수성(I) -고온연성거동-)

  • ;;Lundin, C. D.
    • Journal of Welding and Joining
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    • v.6 no.1
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    • pp.35-45
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    • 1988
  • 오-스테나이트계 스테인레스강에 대한 용접은 용접재료의 개발과 더불어 각종 산업계에 널리 이용되고 있으며 최근 Type 303 오-스테나이트계 스테인레스강 등은 free machining재로써 널리 응용되고 있다. 그러나 이 303계는 피삭성, 절삭성, 칩형성개선을 위한 특수원소(Se, S 등)의 첨가 때문에 용접성에 문제점을 제기하고 있다. 본 연구에서는 Type 303을 중심으로 AISI 304-316NG 및 347NG계의 오-스테나이트계 스테인레스강의 고온연성거동과 고온균열감수성(용접성)에 관한 연구에 대한 검토중 고온연성거동에 관하여 조사하였다. 고온연성평가는 Gleeble Simulator에 의하여 재료와 방향성에 따라 검토하였으며, 그 결과 모든 재료는 압연방향을 종방으로 시험하였을 때는 거의 유사한 고온연성을 나타내었으나 횡방향으로 시험하였을 때는 종방향에 비하여 연성저하를 나타내었다. 이와 같은 고온연성은 후속연구에서 검토될 고온균열 감수성과 밀접한 관련성에 의하여 용접성을 평가할 수 있다.

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A Study on the Copper Metallizing Method of $Al_2$O$_3$ Ceramic Surface (알루미나(Al$_2$O$_3$) 세라믹 표면의 강메탈라이징법에 관한 연구)

  • ;;Choi, Y. G.;Kim, Y. S.
    • Journal of Welding and Joining
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    • v.13 no.3
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    • pp.55-64
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    • 1995
  • Metallizing method on ceramic surface is one of the compositing technology of ceramics and metal. The purpose of this study is to make HIC (Hybrid Intergrated Circuit) with copper metallizing method of which copper layer is formed on ceramic substrate by firing in atmosphere in lieu of conventional hybrid microcircuit systems based on noble metal. Metallizing pastes were made from various copper compounds such as Cu$_{2}$O, CuO, Cu, CuS and kaolin. And the screen printing method was used. The characteristics of metallized copper layers were analyzed through the measurement of sheet resistance, SEM, and EDZX. The results obtainted are summarized as follows; 1. The copper metallizing layers on ceramic surface can be formed by firing in air. 2. The metallized layer using Cu$_{2}$O paste showed the smallest sheet resistance among a group of copper chemical compounds. And optimum metallizing conditions are 15 minutes of firing time, 1000.deg.C of firig temperature, and 3 minutes of deoxidation time. 3. The results of EDAX analysis showed mutual diffusion of Cu and Al. 4. The kaolin plays a important role of deepening the penetration of Cu to $Al_{2}$O$_{3}$ ceramics. But if the kaolin content is too much, sheet resistance increases and copper metallizing layer becomes brittle.

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TSV Filling Technology using Cu Electrodeposition (Cu 전해도금을 이용한 TSV 충전 기술)

  • Kee, Se-Ho;Shin, Ji-Oh;Jung, Il-Ho;Kim, Won-Joong;Jung, Jae-Pil
    • Journal of Welding and Joining
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    • v.32 no.3
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    • pp.11-18
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    • 2014
  • TSV(through silicon via) filling technology is making a hole in Si wafer and electrically connecting technique between front and back of Si die by filling with conductive metal. This technology allows that a three-dimensionally connected Si die can make without a large number of wire-bonding. These TSV technologies require various engineering skills such as forming a via hole, forming a functional thin film, filling a conductive metal, polishing a wafer, chip stacking and TSV reliability analysis. This paper addresses the TSV filling using Cu electrodeposition. The impact of plating conditions with additives and current density on electrodeposition will be considered. There are additives such as accelerator, inhibitor, leveler, etc. suitably controlling the amount of the additive is important. Also, in order to fill conductive material in whole TSV hole, current wave forms such as PR(pulse reverse), PPR(periodic pulse reverse) are used. This study about semiconductor packaging will be able to contribute to the commercialization of 3D TSV technology.

A Study on the Optimum Bonding Preparation Condition of Single Crystal Superalloy (단결정 초내열합금의 재결정 방지를 위한 접합 전처리 조건에 관한 연구)

  • 김대업
    • Journal of Welding and Joining
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    • v.19 no.2
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    • pp.191-199
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    • 2001
  • The oxidation and recrystallization behaviors of Ni-base single crystal superalloy, CMSX-2 were investigated to determine the condition of the preparation for transient liquid phase (TLP) bonding operations. The faying surfaces of CMSX-2 were worked by the shot peening, fine cutting and mechanical polishing treatments and the degree of working of treated surfaces was evaluated by the hardness test and X-ray diffraction method CMSX-2 was heat-treated at 1,173∼1.589k for 3.6ks in vacuum of 4mPa. The mechanically polished surface was slightly oxidized after heat treatment even in the vacuum atmosphere of 4mPa. The thickness of an oxide film increased with increasing the heating temperature and the surface roughness of the faying surface. Recrystallization occurred at the surface after heat treatment at above 1,423K when the hardness was increased more than Hv600 by the shot peening treatment while the mechanically polished or fine cut surfaces didn't recrystallized. Based on these results, it was clearfied that the mechanically polishing with fine abrasive grit could be used for the preparation of faying surface of CMSX-2 before bonding operation.

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