• Proceedings of the KSRS Conference
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• 1998.09a
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• pp.313-318
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• 1998

Electro-Optical Camera(EOC) is the main payload of Korea Multi-Purpose SATellite(KOMPSAT) with the mission of cartography to build up a digital map of Korean territory including Digital Terrain Elevation Map(DTEM). This instrument which comprises EOC Sensor Assembly and EOC Electronics Assembly produces the panchromatic images of 6.6 m GSD with a swath wider than 17 km by push-broom scanning and spacecraft body pointing in a visible range of wavelength, 510 ~ 730 nm. The high resolution panchromatic image is to be collected for 2 minutes during 98 minutes of orbit cycle covering about 800 km along ground track, over the mission lifetime of 3 years with the functions of programmable rain/offset and on-board image data storage. The image of 8 bit digitization, which is collected by a full reflective type F8.3 triplet without obscuration, is to be transmitted to Ground Station at a rate less than 25 Mbps. EOC was elaborated to have the performance which meets or surpasses its requirements of design phase. The spectral response the modulation transfer function, and the uniformity of all the 2592 pixel of CCD of EOC are illustrated as they were measured for the convenience of end-user. The spectral response was measured with respect to each gain setup of EOC and this is expected to give the capability of generating more accurate panchromatic image to the EOC data users. The modulation transfer function of EOC was measured as greater than 16% at Nyquist frequency over the entire field of view which exceeds its requirement of larger than 10%, The uniformity that shows the relative response of each pixel of CCD was measured at every pixel of the Focal Plane Array of EOC and is illustrated for the data processing.

• Journal of the Korean Vacuum Society
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• v.18 no.5
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• pp.377-383
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• 2009

Aluminum-doped zinc oxide (AZO) thin films were deposited on sapphire substrate by using radio-frequency magnetron sputtering and were performed in the temperature range of $600-900^{\circ}C$ by rapid thermal annealing (RTA). The crystallographic structure and the surface morphology were investigated by using X-ray diffraction and scanning electron microscopy, respectively. The crystallinity of the films was improved with increasing the annealing temperature and the average size of crystalline grains was found to be 50 nm. All the thin films showed an average transmittance of 92% in the wavelength range of 400-1100 nm. As the annealing temperature was increased, the bandgap energy was decreased and the violet photoluminescence (PL) signal at 400 nm replaced the ultraviolet PL signal. The electrical properties of the thin films showed a significant dependence on the annealing temperature.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.182-183
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• 2014

Hemispherical dimples with diameter, ø=$60{\mu}m$ and depth, d= $30{\mu}m$ were created on the metal and ceramics surfaces using INYA 10 watt Laser of 1064 nm wavelength. This study reports the influence of dimple pitch on friction and wear behavior rather than dimple size, depth and density. LST was performed on the specimens with dimple pitch and density in the range of 80 to-$200{\mu}m$ and 44 to 7 %, respectively. Surface topography was analyzed by using roughness measurement, scanning electron microscopy (SEM), and optical microscopy. Friction and wear characteristics were analyzed on textured surfaces at lubricating environment to observe the effect of surface texturing on reduction of friction and wear. Reduction on coefficient of friction was achieved by more than 70% due to the dual behavior of dimples as wear (debris) traps and lubricant reservoirs. Wear reduced significantly for the textured surface as compared to the polished surface. Moreover, the friction coefficient of the textured specimens reduced with increasing load and speed which may be attributed to the transition of lubrication regime.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.111.1-111.1
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• 2012

Interest in flexible transparent conducting films (TCFs) has been growing recently mainly due to the demand for electrodes incorporated in flexible or wearable displays in the future. Indium tin oxide (ITO) thin films, which have been traditionally used as the TCFs, have a serious obstacle in TCFs applications. SWNTs are the most appropriate materials for conductive films for displays due to their excellent high mechanical strength and electrical conductivity. In this work, the fabrication by the spraying process of transparent SWNT films and reduction of its sheet resistance on PET substrates is researched Arc-discharge SWNTs were dispersed in deionized water by adding sodium dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWNT was spray-coated on PET substrate and dried on a hotplate. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then was doped with Au-ionic doping treatment, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. This was confirmed and discussed on the XPS and UPS studies. We show that 87 ${\Omega}/{\Box}$ sheet resistances with 81% transmittance at the wavelength of 550nm. The changes in electrical and optical conductivity of SWNT film before and after Au-ionic doping treatments were discussed. The effect of Au-ion treatment on the electronic structure change of SWNT films was investigated by Raman and XPS.

• The Bulletin of The Korean Astronomical Society
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• v.37 no.2
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• pp.107.1-107.1
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• 2012

We present the results of far-ultraviolet (FUV) observations of comet C/2001 Q4 (NEAT) obtained with Far-ultraviolet Imaging Spectrograph (FIMS) on board the Korean microsatellite STSAT-1, which operated at an altitude of 700 km in a sun-synchronous orbit. FIMS is a dual-channel imaging spectrograph (S channel 900-1150 ${\AA}$, L channel 1350-1750 ${\AA}$, ${\lambda}/{\Delta}{\lambda}$ ~ 550) with large image fields of view (S: $4^{\circ}.0{\times}4^{\prime}.6$, L: $7^{\circ}.5{\times}4^{\prime}.3$, angular resolution 5'-10') optimized for the observation of diffuse emission of astrophysical radiation. Comet C/2001 Q4 (NEAT) was observed with a scanning survey mode when it was located around the perihelion between 8 and 15 May 2004. Several important emission lines were detected including S I (1425, 1474 ${\AA}$), C I (1561, 1657 ${\AA}$) and several emission lines of CO $A^1{\Pi}-X^1{\Sigma}^+$ system in the L channel. Production rates of the notable molecules, such as C I, S I and CO, were estimated from the photon fluxes of these spectral lines and compared with previous observations. We compare the flux and the production rates in the radius of $3{\times}10^5$ km with $20{\times}10^5$ km from the central coma. We obtained L-channel image which have map size $5^{\circ}{\times}5^{\circ}$ The image was constructed for the wavelength band of L-channel (1350 - 1710 ${\AA}$. We also present the radial profiles of S I, C I, CO obtained from the spectral images of the central coma. The radial profiles of $2{\times}10^6$ km region are compared with the Haser model.

• Journal of the Korean Vacuum Society
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• v.19 no.4
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• pp.287-292
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• 2010

We have investigated the effects of oxygen flow ratios on the structural, morphological, and optical properties of AlN thin films grown by using radio-frequency reactive magnetron sputtering. The AlN thin films were deposited at $300^{\circ}C$ of substrate temperature, and the reactive gas were supplied with both nitrogen and oxygen. The oxygen flow ratio was varied by controlling the amount of oxygen with respect to the total mixed gases, 0%, 10%, 15%, 20%, 25%, and 30%. The structural, morphological, and optical properties of the deposited AlN thin films were examined by using X-ray diffractometer, scanning electron microscopy, and ultraviolet-visible spectrophotometer. The AlN thin film grown at 10% of oxygen flow ratio indicated an average transmittance of 91.3% in the wavelength range of 350~1,100 nm and an optical band gap of 4.30 eV. The experimental results suggest that AlN thin films can be deposited optionally by varying the oxygen flow ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.379-380
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• 2007

The characteristics of a co-sputtered indium zinc tin oxide (IZTO) films prepared by dual target dc magnetron sputtering from IZO and ITO targets at a room temperature are investigated. Film properties, such as sheet resistance, optical transmittance, surface work function and surface roughness were examined as a function of ITO dc power at constant IZO dc power of 100 W. It was shown that the increase of the ITO dc power during co-sputtering of ITO and IZO target resulted in an increase of sheet resistance of the IZTO films. This can be attributed to high resistivity of ITO film prepared at room temperature. Surface smoothness and roughness were investigated by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The synchrotron x-ray scattering results obtained from IZTO film with different ITO contents showed that introduction of ITO atoms into amorphous IZO film resulted in a crystallization of IZTO film with (222) preferred orientation due to low alc transition temperature of ITO film. However, the transmittance of the IZTO films with thickness of 150 nm is between 80 and 85 % at wavelength of 550 nm regardless of ITO content. Possible mechanism to explain the ITO and IZO co-sputtering effect on properties of IZTO is suggested.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.381-382
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• 2007

IZO/Ag/IZO (IAI) anode films for flexible organic light emitting diodes (OLEDs) were grown on PC (polycarbonate) substrate using DC sputter (IZO) and thermal evaporator (Ag) systems as a function of Ag thickness. To investigate electrical and optical properties of IAI stacked films, 4-point probe and UV/Vis spectrometer were used, respectively. From a IAI stacked film with 12nm-thick Ag, sheet resistance of $6.9\;{\Omega}/{\square}$ and transmittance of above 82 % at a range of 500-550 nm wavelength were obtained. In addition, structural and surface properties of IAI stacked films were analyzed by XRD (X-ray diffraction) and SEM (scanning electron microscopy), respectively. Moreover, IAI stacked films showed dramatically improved mechanical properties when subjected to bending both as a function of number of cycles to a fixed radius. Finally, OLEDs fabricated on both flexible IAI stacked anode and conventional ITO/Glass were fabricated and, J-V-L characteristics of those OLEDs were compared by Keithley 2400.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.09a
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• pp.35-40
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• 2005

The demand for small and high-capacity optical data storage devices has rapidly increased. The areal density of optical disk is increased using higher numerical aperture objective lens and shorter wavelength source. A wafer-scale stacked micro objective lens with a numerical aperture of 0.85 and a focal length of 0.467mm for the 405nm blue- violet laser was designed and fabricated. A diffractive optical element (DOE) was used to compensate the spherical aberration of the objective lens. Among the various fabrication methods for micro DOE, the UV-replication process is more suitable for mass-production. In this study, an 8-stepped DOE pattern as a master was fabricated by photolithography and reactive ion etching process. A flexible mold was fabricated for improving the releasing properties and shape accuracy in UV-molding process. In the replication process, the effects of exposing time and applied pressure on the replication quality were analyzed. Finally, the shapes of master, mold and molded pattern were measured by optical scanning profiler. The deviation between the master and the molded DOE was less than 0.1um. The efficiency of the molded DOE was measured by DOE efficiency measurement system which consists of laser source, sample holder, aperture and optical power meter, and the measured value was $84.5\%$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.80-80
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• 2010

Graphene has attracted tremendous attention for the last a few years due to it fascinating electrical, mechanical, and chemical properties. Up to now, several methods have been developed exclusively to prepare graphene, which include micromechanical cleavage, polycrystalline Ni employing chemical vapor deposition technique, solvent thermal reaction, thermal desorption of Si from SiC substrates, chemical routes via graphite intercalation compounds or graphite oxide. In particular, polycrystalline Ni foil and conventional chemical vapor deposition system have been widely used for synthesis of large-area graphene. [1-3] In this study, synthesis of mono-layer graphene on a Ni foil, the mixing ratio of hydrocarbon ($CH_4$) gas to hydrogen gas, microwave power, and growth time were systemically optimized. It is possible to synthesize a graphene at relatively lower temperature ($500^{\circ}C$) than those (${\sim}1000^{\circ}C$) of previous results. Also, we could control the number of graphene according to the growth conditions. The structural features such as surface morphology, crystallinity and number of layer were investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM), transmission electron microscopy (TEM) and resonant Raman spectroscopy with 514 nm excitation wavelength. We believe that our approach for the synthesis of mono-layer graphene may be potentially useful for the development of many electronic devices.