• Korean Journal of Optics and Photonics
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• v.14 no.6
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• pp.578-582
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• 2003

We propose a novel structure of wavelength selective optical add/drop module comprising two tap couplers and a fiber Bragg grating. The device has unique features including a simpler structure and a lower cost of implementation as compared with existing devices for the same operation. The module performance has been measured and analyzed experimentally. The implemented prototype module shows good performance with no-crosstalk power penalty in a 155 Mbps per channel wavelength-division-multiplexing transmission system but suffers from a relatively high loss of 3.5 ㏈ and 21 ㏈ for transmitted and dropped channels, respectively. While the dropped channel extinction ratio was more than 25 ㏈, the transmitted channel extinction ratio was more than 35 ㏈.

• Biotechnology and Bioprocess Engineering:BBE
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• v.9 no.6
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• pp.428-434
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• 2004

Coarse clumping of solid materials within diseased biological cells can have a marked influence on the light scattering pattern. Perturbations in refractive index lead to distinct varia­tions in the cytometric signature, especially apparent over wide scattering angles. The large dynamic range of scattering intensities restricts collection of data to narrow angular intervals be­lieved to have the highest potential for medical diagnosis. We propose the use of an interfer­ence filter to reduce the dynamic range. Selective attenuation of scattering intensity levels is expected to allow simultaneous data collection over a wide angular interval. The calculated angu­lar transmittance of a commercial shortwave-pass filter of cut-off wavelength 580 nm indicates significant attenuation of scattering peaks below ${\~}\;10^{circ}$, and reasonable peak equalization at higher angles. For the three-dimensional calculation of laser light scattered by cells we use a spectral method code that models cells as spatially varying dielectrics, stationary in time. How­ever, we perform preliminary experimental testing with the interference filter on polystyrene microspheres instead of biological cells. A microfluidic toolkit is used for the manipulation of the microspheres. The paper intends to illustrate the principle of a light scattering detection system incorporating an interference filter for selective attenuation of scattering peaks.

• Transactions on Electrical and Electronic Materials
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• v.17 no.3
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• pp.146-149
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• 2016

The CrN/TiN/Al thin films for solar selective absorber were prepared by dc reactive magnetron sputtering with multi targets. The binary nitride CrN layer deposited with change in N₂ gas flow rates. The gas mixture of Ar and N2 was an important parameter during sputtering deposition because the metal volume fraction (MVF) was controlled by the N2 gas flow rate. In this study, the crystallinity and surface properties of the CrN/TiN/Al thin films were estimated by X-ray diffraction (XRD), atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM). The composition and depth profile of thin films were investigated using Auger electron spectroscopy (AES). The absorptance and reflectance with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 300~1,100 nm.

• Transactions on Electrical and Electronic Materials
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• v.16 no.5
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• pp.264-267
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• 2015

AlCrNO cermet films were prepared on aluminum substrates using a DC-reactive magnetron sputtering method and a water-cooled Al:Cr target. The Al₂O₃/AlCrNO (LMVF)/AlCrNO (MMVF)/AlCrNO (HMVF)/Al/substrate of the 5 multi-layers was prepared according to the Ar and (N₂ + O₂) gas-mixture rates. The Al₂O₃ of the top layer is the anti-reflection layer of triple AlCrNO (LMVF)/AlCrNO (MMVF)/AlCrNO (HMVF) layers, and an Al metal forms the infrared reflection layer. In this study, the crystallinity and surface properties of the AlCrNO thin films were estimated using X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM), while the composition of the thin films was systematically investigated using Auger electron spectroscopy (AES). The optical properties of the wavelength spectrum were recorded using UH4150 spectrophotometry (UV-Vis-NIR) at a range of 0.3 μm to 2.5 μm.

• Journal of the Korean Society for Precision Engineering
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• v.24 no.5
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• pp.104-109
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• 2007

Photochemical patterning of self-assembled mono layers (SAMs) has been performed by diode pumped solid state (DPSS) 3rd harmonic Nd:$YVO_4$ laser with wavelength of 355 nm. SAMs patternings of parallel lines have subsequently been used either to generate compositional chemical patterns or fabricate microstructures by a wet etching. This paper describes a selective etching process with patterned SAMs of alkanetiolate molecules on the surface of gold. SAMs formed by the adsorption of alkanethiols onto gold substrate employs as very thin photoresists. In this paper, the influence of the interaction between the functional group of SAMs and the etching solution is studied with optimal laser irradiation conditions. The results show that hydrophobic functional groups of SAMs are more effective for selective chemical etching than the hydrophilic ones.

• Korean Journal of Materials Research
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• v.14 no.6
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• pp.399-401
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• 2004

InGaAs/GaAs quantum wire structures were grown by low pressure metalorganic chemical vapor deposition by using selective area epitaxy.$ In_{ 0.2}$$Ga_{0.8}$ As/GaAs quantum wire structures were grown on a $SiO_2$ masked GaAs substrate. Quantum wire structures with sharp tips and smooth side walls were grown. We have grown InGaAs/GaAs quantum wire structures using variously opened width of the $SiO _2$ mask. Even though the opening widths of $SiO_2$ masked GaAs substrate were different, similar shapes of triangular structures were grown. Using various kinds of differently opened $SiO_2$ masked area, it would be possible to grow quantum wire structures with various thicknesses. The quantum wire structures are formed near the pinnacle of the triangular structure. Therefore, the fabrication of the uniquely designed integrated optical devices which include light emitting sources of multiple wavelength is possible.

• Journal of the Korea Institute of Military Science and Technology
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• v.25 no.3
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• pp.251-258
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• 2022

Infrared stealth technology used in aircraft is applied to reduce the infrared signal by controlling surface temperature and emissivity using internal heat sink, low emissivity material or metamaterial. However, there is one part of the aircraft where the use of this technology is limited, and that is the radome. Especially, radome should have transmittance for the specific radio frequency, therefore, common stealth technology such as emissivity control surfaces cannot be applied to radome surface. In this study, we developed metal nano-coating for infrared stealth which is applicable to radome surface. We designed slot-type pattern for frequency selective transmission in X-band, and also controlled thickness of metal nano-coating for long wavelength infrared emissivity control. As a result, our infrared stealth surface for radome has 93.2 % transmittance in X-band and various infrared emissivities from 0.17 to 0.57 according to nano-coatings thickness. Also, we analyzed infrared signature of radome through numerical simulation, and finally reduced contrast radiant intensity by 97.57 % compared to polyurethane surface.

• Korean Journal of Optics and Photonics
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• v.20 no.4
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• pp.217-222
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• 2009

In this paper, a low-cost hybrid-integrated tunable laser is realized using a polymer-ring resonator-based add/drop filter reflector and a reflective semiconductor optical amplifier. The add/drop filter reflector, composed of a double-ring resonator with different radii, can have characteristics of selective wavelength reflection and wide wavelength tuning with an aid of vernier effect derived from the radii difference. By hybrid-integrating the reflective semiconductor optical amplifier with the add/drop filter reflector, a tunable laser can be realized through an active alignment method. The hybrid laser exhibited a single mode lasing with side mode suppression ratio of 26 dB and full width half maximum of 0.03 nm. In addition, applying a low current as small as 25 mA onto electrodes over add/drop filter reflector, a wavelength tuning range of 17 nm could be obtained.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.9
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• pp.1-6
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• 2000

Utilizing impurity free vacancy diffusion (IFVD) method, area selective intermixing of InGaAs/InGaAsP multi-quantum well (MQW) structure was done. After this, wavelength division demultiplexing waveguide type photodetectoers was integrated and measured. It showed large blue shift in bandgap due to intermixing of MQW. Photodetectors are based on typical p-i-n structure and devices having large and small bandgap areas line up linearly. Width of waveguide and length of each photodetector are 20 and 250 ${\mu}m$, respectively, TE/TM polarized light from tunable laser was butt-coupled to the photodetector and spectral response was measured. Photodetectors can demultiplexing 1480 and 1550 nm wavelength.

• Laser Solutions
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• v.14 no.2
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• pp.17-23
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• 2011

Active thin films are ubiquitous in the manufacture of all forms of flat panel display (FPD). One of the most widely employed thin films is indium tin oxide (ITO) and metal films used electrically conductive materials in display industries. ITO is widely used for fabrication of LCD, OLED device, and many kinds of optical applications because of transparency in visible range and its high conductivity and metal films are also widely employed as electrodes in various electric and display industries. It is important that removing specific area of layer, such as ITO or metal film on substrate, to fabricate and repair electrode in display industries. In this work, we demonstrate efficient selective ablation process to ITO and aluminum film on glass using a femtosecond laser (${\lambda}p=1025nm$) respectively. The femtosecond laser with wavelength of 1025nm, pulse duration of 400fs, and the repetition rate of 100kHz was used for selectively removing ITO and Al on glass in the air. We can successfully remove the ITO and Al films with various pulse energies using a femtosecond laser.