• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.6 no.3
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• pp.80-90
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• 1995

The scattering parameters of a microstrip single line, a right-angle bend and a coupled line are calculated using the multiport network model for the frequency range from 1 to 18 GHz. The single line is analyzed using the planar waveguide model. The right-angle bend is broken into two rectangular segments, and each segment is analyzed in a similar fashion as the single line. Impedance matrices corresponding to the two segments are combined by the segmentation method. In the analysis of elec- tromagnetic coupling of the coupled line, a new method is employed resulting in much less computation time than those previous methods involving Green's functions. A good agreement between the numerical results for the three structures and those from SuperCompact reveals the usefulness of the multiport network medel in analyzing complicated mirostrip single and coupled line discontinuities.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.8
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• pp.1621-1628
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• 2003

Packaging structures to block the propagation of higher­order modes in the shielded microstrip lines are designed. Packaging for microwave circuits is necessary, basically, to isolate and protect circuits from outside environments both physically and electrically. The drawback of packaging is the possibility of higher­order mode propagation, similar to waveguide modes, as the operating frequency increases. One of Possible choices for the higher­order mode suppression is to insert diaphragms to the housing structure. The shielding effects of diaphragms are analyzed using an FEM code. Several parameters such as dispersion, mode conversion, and higher­order mode transmission and reflection are analyzed. The effect of higher­order mode suppression is eminent as the depth or width of a diaphragm is increased in the air region of the microstrip line. It is shown that inductive diaphragm structure can lower ${S_21}$ for the second­order mode incidence by 30㏈, comparing with the conventional capacitive diaphragm structure. Packaging structure analyzed in this paper can be applied usefully to the design of the microwave system in a package such as transmit/receive modules.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.5
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• pp.87-103
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• 2008

In recent years, the field of THz photonics based on THz pulse technology has gained tremendous, world-wide interest as a new exciting research subject. With a possibility of many commercial applications as well as fundamental scientific achievements in the field, many advanced nations are stepping up their effort in advancing the field of THz photonics. This fact is supported by the observation of the significant increase in the number of papers on THz pulse technology presented in renowned international journals and conferences. The subject that is interesting for the THz application is the development of THz pulse sources and detectors, and other passive devices. In this paper, we present a brief review on some of the key devices and their relavant measurement techniques such as THz photoconductive antennas, optical rectification, difference frequency geneneration with quasi-phase matching structures, electro-optic sampling, high speed real time measurements, THz transmission lines, and other various waveguide structures.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.7
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• pp.711-719
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• 2011

A study of miniaturization of an L-band orthomode transducer(OMT) for field experiments of radar backscatter is presented in this paper. The proposed OMT is not required the additional waveguide taper structures to connect with a standard adaptor by the newly designed junction structure which bases on a waveguide taper. Total length of the OMT for L-band is about 1.2 ${\lambda}_o$(310 mm) and it's a size of 60 % of the existing OMTs. And, to increase the matching and isolation performances of each polarization, two conducting posts are inserted. The bandwidth of 420 MHz and the isolation level of about 40 dB are measured in the operating frequency. The L-band scatterometer consisting of the manufactured OMT, a horn-antenna and network analyzer(Agilent 8753E) was used STCT and 2DTST to analysis the measurement accuracy of radar backscatter. The full-polarimetric RCSs of test-target, 55 cm trihedral corner reflector, measured by the calibrated scatterometer have errors of -0.2 dB and 0.25 dB for vv-/hh-polarization, respectively. The effective isolation level is about 35.8 dB in the operating frequency. Then, the horn-antenna used to measure has the length of 300 mm, the aperture size of $450{\times}450\;mm^2$, and HPBWs of $29.5^{\circ}$ and $36.5^{\circ}$ on the principle E-/H-planes.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.40 no.5
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• pp.197-203
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• 2003

In this paper, we have presented millimeter-wave high conversion gain quadruple subharmonic mixers adopting the cascode harmonic generator The subharmonic mixers were successfully integrated by using 0.1 ${\mu}{\textrm}{m}$ GaAs pseudomorphic HEMTs(PHEMTs) and coplanar waveguide(CPW) structures. Measured output of 1st, 2nd and 4th harmonics of the fabricated cascode 4th harmonic generator are -21.42 dBm, -32.65 dBm and -13.45 dBm, respectively, for an input power of 10 dBm at 14.5 GHz. We showed that the highest conversion gain of 3.4 dB has obtained thus far at a LO power of 13 dBm from the fabricated subharmonic mixers. The millimeter-wave subharmonic mixer also ensure a high degree of isolation showing -53.6 dB in the LO-to-IF and -46.2 dB in the LO-to-RF, respectively, at a frequency of 14.5 GHz. The high conversion gain achieved in this work is the first report among the millimeter-wave subharmonic mixers.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.4
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• pp.582-593
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• 1999

This paper presents the design and fabrication of the diplexer for a KOREASAT-III Ka-band satellite transponder. The transmission characteristics of the diplexer is analyzed by calculating the generalized scattering matrix using mode matching method. It is composed of 2 bandpass filters, coupled with H-plane T-junction having symmetrical inductive iris and E-plane metal insert structures. Compared with the size and weight of the Rx and Tx filter loaded with a transponders respectively, those of the diplexer can be effectively reduced. In a high power transmission, the variation of the filter characteristics is minimized by the scheme that irises are extended to the exterior of H-plane of the waveguide. This scheme needs no extra heat sinks for dissipating high power. The diplexer is designed to improve the simplification, durability and reliability by eliminating tuning screws, which have been used to compensate for the characteristics of fabricated filters. The bandpass filters of the diplexer show the insertion loss of less than 1.2 dB and the return loss in excess of 15 dB. The isolations of more than 65 dB have been achieved between Rx and Tx filter.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.391-392
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• 2012

In these days, the desire for the precise and tiny displays in mobile application has been increased strongly. Currently, laser displays ranging from large-size laser TV to mobile projectors, are commercially available or due to appear on the market [1]. In order to achieve a mobile projectors, the semiconductor laser diodes should be used as a laser source due to their size and weight. In this presentation, the continuous etch characteristics of Pd and AlGaN/GaN superlattice for the fabrication of blue laser diodes were investigated by using inductively coupled $CHF_3$ and $Cl_2$ -based plasma. The GaN laser diode samples were grown on the sapphire (0001) substrate using a metal organic chemical vapor deposition system. A Si-doped GaN layer was grown on the substrate, followed by growth of LD structures, including the active layers of InGaN/GaN quantum well and barriers layer, as shown in other literature [2], and the palladium was used as a p-type ohmic contact metal. The etch rate of AlGaN/GaN superlattice (2.5/2.5 nm for 100 periods) and n-GaN by using $Cl_2$ (90%)/Ar (10%) and $Cl_2$ (50%)/$CHF_3$ (50%) plasma chemistry, respectively. While when the $Cl_2$/Ar plasma were used, the etch rate of AlGaN/GaN superlattice shows a similar etch rate as that of n-GaN, the $Cl_2/CHF_3$ plasma shows decreased etch rate, compared with that of $Cl_2$/Ar plasma, especially for AlGaN/GaN superlattice. Furthermore, it was also found that the Pd which is deposited on top of the superlattice couldn't be etched with $Cl_2$/Ar plasma. It was indicating that the etching step should be separated into 2 steps for the Pd etching and the superlattice etching, respectively. The etched surface of stacked Pd/superlattice as a result of 2-step etching process including Pd etching ($Cl_2/CHF_3$) and SLs ($Cl_2$/Ar) etching, respectively. EDX results shows that the etched surface is a GaN waveguide free from the Al, indicating the SLs were fully removed by etching. Furthermore, the optical and electrical properties will be also investigated in this presentation. In summary, Pd/AlGaN/GaN SLs were successfully etched exploiting noble 2-step etching processes.

• Korean Journal of Optics and Photonics
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• v.30 no.6
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• pp.249-254
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• 2019

An optical current sensor device that measures electric current by the principle of the Faraday effect was designed and fabricated. The polarization-rotated reflection interferometer and the quadrature phase interferometer were introduced so as to improve the operational stability. Complex structures containing diverse optical components were integrated in a polymeric optical integrated circuit and manufactured in a small size. This structure allows sensing operation without extra bias feedback control, and reduces the phase change due to environmental temperature changes and vibration. However, the Verdet constant, which determines the Faraday effect, still exhibits an inherent temperature dependence. In this work, we tried to eliminate the residual temperature dependence of the optical current sensor based on polarization-rotated reflection interferometry. By varying the length of the fiber-optic wave plate, which is one of the optical components of the interferometer, we could compensate for the temperature dependence of the Verdet constant. The proposed optical current sensor exhibited measurement errors maintained within 0.2% over a temperature range, from 25℃ to 85℃.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.8
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• pp.36-44
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• 1999

This paper presents the design and fabrication of the duplexer for a Ka-band satellite transponder which is analyzed transmission characteristics by calculating the generalized scattering matrix using mode matching method. It is composed of 2 bandpass filters, coupled with H-plane T-junction having symmetrical inductive iris and E-plane metal insert structures. Compared with the size and weight of the Rx and Tx filter loaded with a transponders respectively, those of the duplexer can be effectively reduced. In a high power transmission, the variation of the filter characteristics is minimized by the scheme that irises are extended to the exterior of H-plane of the waveguide. This scheme needs no extra heat sinks for dissipating high power. The duplexer is designed to improve the simplification, durability and reliability by eliminating tuning screws, which have been used to compensate for the characteristics of fabricated filters. The bandpass filters of the duplexer show the insertion loss of less than 1.2 dB and the return loss in excess of 15 dB. The isolations of more than 65 dB have been achieved between Rx and Tx filter.