• Title/Summary/Keyword: Waveguide structures

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Tunable Band-pass Filters using Ba0.5Sr0.5TiO3 Thin Films for Wireless LAN Application (무선랜 대역용 Ba0.5Sr0.5TiO3 박막을 이용한 가변 대역 통과 여파기)

  • Kim, Ki-Byoung;Yun, Tae-Soon;Lee, Jong-Chul;Kim, Il-Doo;Lim, Mi-Hwa;Kim, Ho-Gi;Kim, Jong-Heon;Lee, Byungje;Kim, Na-Young
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.13 no.8
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    • pp.819-826
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    • 2002
  • In this paper, the performance of Au / $Ba_{0.5}Sr_{0.5}TiO_3$ (BST) / Magnesium oxide (MgO) two-layered electrically tunable band-pass Filters (BPFs) is demonstrated. The devices consist of microstrip, coplanar waveguide (CPW), and conductor-backed coplanar waveguide (CBCPW) structures. These BST thin film band-pass filters have been designed by the 2.5 D field simulator, IE3D, Zeland Inc., and fabricated by thin film process. The simulation results, using the 2-pole microstrip, CPW, and CBCPW band-pass filters, show the center frequencies of 5.89 GHz, 5.88 GHz, and 5.69 GHz, and the corresponding insertion losses are 2.67 dB, 1.14 dB, and 1.60 dB, with 3 %, 9 %, and 7 % bandwidth, respectively. The measurement results show the center frequencies of 6.4 GHz, 6.14 GHz, and 6.04 GHz, and their corresponding insertion losses are 6 dB, 4.41 dB, and 5.41 dB, respectively, without any bias voltage. With the bias voltage of 40 V, the center frequencies for the band-pass filters are measured to be 6.61 GHz, 6.31 GHz, and 6.21 GHz, and their insertion losses are observed to be 7.33 dB, 5.83 dB, and 6.83 dB, respectively. From the experiment, the tuning range for the band-pass filters are determined as about 3 % ~ 8 %.

The Generalized Characteristics of Extinction Ratio for a Directional Coupler and Design of Compact 1310/1550 nm Demultiplexer (방향성 결합기 소멸비 특성의 일반화 경향과 파장분리기의 소형화 설계)

  • Choi, Chul-Hyun;O, Beom-Hoan;Lee, Seung-Gol;Park, Se-Geun;Lee, El-Hang
    • Korean Journal of Optics and Photonics
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    • v.16 no.5
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    • pp.446-449
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    • 2005
  • In a directional coupler, the design process requires repeated calculation of the characteristics of every changed structure, because it is generally difficult to expect the extinction ratio to be optimized over the entire variation of design parameters. In this paper, we systematically simulated the extinction ratio as a function of the design parameters, and analyzed the general tendency of that characteristic. In other words, we could find the generalized extinction ratio curve if the separation distance is normalized by the waveguide width. Here, the extinction ratio is shown to be increased as the normalized frequency (v) and the ratio (d) of the separation distance over the waveguide width were increased. For various structures with same ratio d, all corresponding extinction ratio curves as a function of v coincide with each other. We showed the usefulness of the generalized extinction ratio curve by applying it to the design and the fabrication of 1310/l550 nm demultiplexer, as it was convenient to design a shorter directional coupler with targeted extinction ratio from this curve.

Optical properties of Al doped ZnO Nanofibers Prepared by electrospinning (전기방사를 이용한 Al이 첨가된 ZnO 나노섬유의 제조 및 광학 특성평가)

  • Song, Chan-Geun;Yoon, Jong-Won
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.21 no.5
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    • pp.205-209
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    • 2011
  • Zinc oxide has semi-conductivity and super conductivity characteristics. It can be used optically and is applied on many areas such as gas sensor, solar cell and optical waveguide. In this paper, to improve optical characteristics of ZnO, aluminum was added on zinc oxide. Zinc oxide and aluminum zinc oxide was fabricated as nano fiber form. ZnO solution was created by mixing poly vinyl pyrrolidone, ethyl alcohol, and zinc acetate. An Al doped ZnO was created by adding aluminum solution to ZnO sol. By applying these sols on electro spinning method, nano fibers were fabricated. These fibers are heat treated at 300, 500, and $700^{\circ}C$ degrees and were analyzed with X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) to examine the nano structures. TGA and DSC measurement was also used to measure the change of mass and calorie upon temperature change. The absorbance of ZnO and Al-doped ZnO was carried out by UV-vis measurement.

A Design of Spurious-Reduced CPW Low-Pass Filter Based on Defected Ground Structure (고조파 제거 특성을 갖는 DGS 형태의 CPW 저역 통과 여파기의 설계)

  • No Jin-Won;Choi Kyoung;Hwang Hee-Yong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.17 no.2 s.105
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    • pp.117-123
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    • 2006
  • In this paper, a CPW lowpass filter with the spurious-reduced characteristic is designed by using DGS(Defected Ground Structures). By cascading two lowpass filters with different harmonic characteristics the spurious is reduced below - 15 dB. Additionally by combining a dumbbell shaped DGS to the filter we achieved a satisfactory spurious level of less than -25 dB to above three times cutoff frequency without any repeated passband. The fabricated LPF shows a compact size of $17.2mm{\times}6.8mm$, a cutoff frequency of 6 GHz, and a sharp skirt response of 7-order with two notch frequencies. The measured frequency responses agree well with simulated ones.

Resonant Transmission of a Rectangular Waveguide Probe with H-type Small Aperture (H-형태 소형 개구를 가진 직사각형 도파관 탐침의 공진 투과)

  • Ko, Ji-Hwan;Cho, Young-Ki
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.24 no.12
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    • pp.1198-1204
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    • 2013
  • As a microwave near field probe for near field scanning optical microscope(NSOM) system, H-shaped(ridge type) small aperture is proposed and its performances from the viewpoints of the transmission efficiency(transmission cross section) and spatial confinement(beam spot size) are compared with those of the previous narrow rectangular aperture type. While the transmission efficiencies are comparable to each other for the two structures, the transmitted beam spot size for the proposed H-shaped aperture is much smaller than that for the previous rectangular aperture. This strong point of the H-shaped aperture is expected to significantly improve near-field optical applications such as optical data storage, nanolithography and nanomicroscopy. It is also observed that the transmission efficiency can be improved if the coupling aperture is implemented in the type of the transmission cavity.

Design of a Metamaterial-Based Low-Profile Antenna Mounted on LEO/Cube Satellites (저궤도 큐브위성 탑재용의 메타물질형 저자세 안테나의 설계)

  • Han, Dajung;Lee, Changhyeong;Park, Heejun;Lee, Jihye;Kahng, Sungtek
    • Journal of Satellite, Information and Communications
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    • v.12 no.1
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    • pp.94-100
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    • 2017
  • In this paper, we suggest a design method of a metamaterial-based low-profile antenna working at 425 MHz for LEO/Cube satellites. Satellites play an important role in linking th remote nodes in a wireless communication network and covering wide areas of the globe. Especially, an increasing number of universities or individuals aspire having their own satellites and build low-budget structures such as cube satellites in LEO and the ways to reduce the sizes of their satellites. Since the antenna occupies a major portion of the satellite surface, the antenna should be miniaturized for lighter weight. The proposed metamaterial low-profile antenna, unlike the conventional patch antenna, produces such a zeroth-order resonance to create an omnidirectional radiation pattern. Also, it is connected to a UHF waveguide bandpass filter as the feeding system to examine the possible change in the situation that the antenna is combined with the system. The performances of the monopole and proposed metamaterial antennas are compared to one another.

Experimental Extraction of Effective Permittivity on the Structures of Coplanar Waveguides (코프래너 도파로 구조에서 S-파라메터를 이용한 유효유전상수 실험적 도출)

  • 지용
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.11
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    • pp.15-20
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    • 2004
  • This paper proposed a very simple method of extracting an effective permittivity from the data of scattering parameters measured on the transmission line of coplanar waveguides in the frequency range of microwave or millimeter waves. This is an extracting method of an effective permittivity $\varepsilon$$_{eff}$ in the case of $\beta$$\ell$ =n$\pi$ (n=integer), where the value of S$_{11}$ changes abruptly following the operating frequency. The experimental value of the effective permittivity $\varepsilon$$_{eff}$ on a dielectric substrate of Rogers 4003$^{TM}$ material of $\varepsilon$$_{r}$ =3.38 showed the value of 2.042, which differs in the error of -3.4% to 8% from those calculated from the previously reported formulae. This result showed that the measurement method was very simple, as well as applied directly to the fabricated circuit patterns, even though the circuit patterns might be complicated or on the substrate of different dielectric materials.s.als.

940-nm 350-mW Transverse Single-mode Laser Diode with AlGaAs/InGaAs GRIN-SCH and Asymmetric Structure

  • Kwak, Jeonggeun;Park, Jongkeun;Park, Jeonghyun;Baek, Kijong;Choi, Ansik;Kim, Taekyung
    • Current Optics and Photonics
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    • v.3 no.6
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    • pp.583-589
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    • 2019
  • We report experimental results on 940-nm 350-mW AlGaAs/InGaAs transverse single-mode laser diodes (LDs) adopting graded-index separate confinement heterostructures (GRIN-SCH) and p,n-clad asymmetric structures, with improved temperature and small-divergence beam characteristics under high-output-power operation, for a three-dimensional (3D) motion-recognition sensor. The GRIN-SCH design provides good carrier confinement and prevents current leakage by adding a grading layer between cladding and waveguide layers. The asymmetric design, which differs in refractive-index distribution of p-n cladding layers, reduces the divergence angle at high-power operation and widens the transverse mode distribution to decrease the power density around emission facets. At an optical power of 350 mW under continuous-wave (CW) operation, Gaussian narrow far-field patterns (FFP) are measured with the full width at half maximum vertical divergence angle to be 18 degrees. A threshold current (Ith) of 65 mA, slope efficiency (SE) of 0.98 mW/mA, and operating current (Iop) of 400 mA are obtained at room temperature. Also, we could achieve catastrophic optical damage (COD) of 850 mW and long-term reliability of 60℃ with a TO-56 package.

Temperature Dependency of Non-dispersive Infrared Carbon Dioxide Gas Sensor by using Infrared Sensor for Compensation (보상용 적외선 센서를 사용한 비분산 적외선 이산화탄소 센서의 온도특성)

  • Yi, SeungHwan
    • Journal of Sensor Science and Technology
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    • v.25 no.2
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    • pp.124-130
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    • 2016
  • NDIR $CO_2$ gas sensor was built with ASIC implemented thermopile sensor which included temperature sensor and unique elliptical waveguide structures in this paper. The temperature dependency of dual infrared sensor module ($CO_2$ and reference IR sensors) has been characterized and its output voltage characteristics according to the temperature and gas concentration were proposed for the first time. NDIR $CO_2$ gas and reference IR sensors showed linear output voltages according to the variation of ambient temperatures from 243 K to 333 K and their slopes were 14.2 mV/K and 8.8 mV/K, respectively. The output voltages of temperature sensor also presented a linear dependency according to the ambient temperature and could be described with V(T)=-3.191+0.0148T(V). The output voltage ratio between $CO_2$ and reference IR sensors revealed irrelevant to the changes of ambient temperatures and gave a constant value around 1.6255 with standard deviation 0.008 at 0 ppm. The output voltage of $CO_2$ gas sensor at zero ppm $CO_2$ gas consisted of two components; one is caused by the HPB (half pass-band) of IR filter and the other is attributed to the part of $CO_2$ absorption wavelength. The characteristics of output voltages of $CO_2$ gas sensor could be accurately modeled with three parameters which are dependent upon the ambient temperatures and represented small average error less than 1.5% with 5% standard deviation.

High Conversion Gain Q-band Active Sub-harmonic Mixer Using GaAs PHEMT

  • Uhm, Won-Young;Lee, Bok-Hyung;Kim, Sung-Chan;Lee, Mun-Kyo;Sul, Woo-Suk;Yi, Sang-Yong;Kim, Yong-Hoh;Rhee, Jin-Koo
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.3 no.2
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    • pp.89-95
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    • 2003
  • In this paper, we have designed and fabricated high conversion gain Q-band active sub-harmonic mixers for a receiver of millimeter wave wireless communication systems. The fabricated active sub-harmonic mixer uses 2nd harmonic signals of a low local oscillator (LO) frequency. The fabricated mixer was successfully integrated by using $0.1{\;}\mu\textrm{m}$GaAs pseudomorphic high electron mobility transistors (PHEMTs) and coplanar waveguide (CPW) structures. From the measurement, it shows that maximum conversion gain of 4.8 dB has obtained at a RF frequency of 40 GHz for 10 dBm LO power of 17.5 GHz. Conversion gain from the fabricated sub-harmonic mixer is one of the best reported thus far. And a phase noise of the 2nd harmonic was obtained -90.23 dBc/Hz at 100 kHz offset. The active sub-harmonic mixer also ensure a high degree of isolations, which are -35.8 dB from LO-to-IF and -40.5 dB from LO-to-RF, respectively, at a LO frequency of 17.5 GHz.