• Journal of Internet Computing and Services
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• v.13 no.3
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• pp.17-22
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• 2012

In this paper, a photoelectric image detection system is proposed using an APD(Avalanche Photodiode) sensor, a LED illuminator, and fiberoptic waveguides. This proposed pinhole detection system can detect the pinholes of 100 micron with the speed rate of 1,000mpm(meter per minute). And detecting performance of image system is improved by the SQL based DB analysis of classifying pinhole's detected location and size using image detection algorithms.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.79-80
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• 2005

In this paper, the circuit models of optical to electrical(O/E) characteristics of waveguide photodiode(WGPD) submodule are examined. Test structures of WGPD and WGPD submodule were fabricated and S21 parameter was measured to characterize the O/E conversion property. Valid circuit models were derived by RF circuit simulation and O/E characteristics were modeled to analyze the effects of model parameters on the WGPD submodule performances. Based on the results, it can be concluded that the suggested WGPD submodule model can explain the characteristics of the O/E conversion of WGPD submodule, where the parasitic components originated from ribbon bonding block crucially influence on the performance of WGPD submodule, are able to show more efficient property by making compact bonding structure. We propose an effective WGPD submodule bonding structure and it can ensure the 40Gbps operation of WGPD.

• ETRI Journal
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• v.27 no.5
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• pp.484-490
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• 2005

We fabricated 40 Gb/s front-end optical receivers using spot-size converter integrated waveguide photodiodes (SSC-WGPDs). The fabricated SSC-WGPD chips showed a high responsivity of approximately 0.8 A/W and a 3 dB bandwidth of approximately 40 GHz. A selective wet-etching method was first adopted to realize the required width and depth of a tapered waveguide. Two types of electrical pre-amplifier chips were used in our study. One has higher gain and the other has a broader bandwidth. The 3 dB bandwidths of the higher gain and broader bandwidth modules were about 32 and 42 GHz, respectively. Clear 40 Gb/s non-return-to-zero (NRZ) eye diagrams showed good system applicability of these modules.

• Journal of Sensor Science and Technology
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• v.30 no.6
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• pp.415-419
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• 2021

We developed a highly accurate, yet inexpensive, refractive index (RI)-based soil moisture sensor. To detect the RI, a light guide was set with a light-emitting diode and photodiode. When the air fills the space between the soil particles, most of the incident light is reflected at the interface between the waveguide and the air because of the large RI difference. As the moisture of the soil increases, the macroscopic soil RI increases. This allows incident light to pass through the interface. The intensity of the light reaching the photodiode was simulated according to the change in the soil RI. Using the simulation results, we designed and manufactured a curved glass waveguide. We evaluated the performance of the RI-based soil sensor by comparing it with a commercially available, high-cost and high-performance time-domain reflectometer (TDR). Our sensor was 96% accurate, surpassing the costly TDR sensor.

• ETRI Journal
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• v.26 no.1
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• pp.61-64
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• 2004

We have explored the fabrication of an InP/InGaAs single heterojunction bipolar transistor (HBT) and a wave guide p-i-n photodiode (PD) on two kinds of double stacked layers for the implementation of an optoelectronic millimeter-wave monolithic integrated circuit (OEMMIC). We applied a photosensitive polyimide for passivation and integration to overcome the large difference between the HBT and PD layers of around $3{\mu}m$. Our experiment showed that the RF characteristics of the HBT were dependent on the location of the PD layer, while the dc performances of the HBTs and PDs were independent of the type of stacked layer used. The $F_t$ and $F_{max}$ of the HBTs on the HBT/PD stacked layer were 10% lower than those of the HBTs on the PD/HBT stacked layer.

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.102-103
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• 2003

광통신 분야에서 장파장 p-i-n 광 검출기는. 현재와 미래의 양자 회로 설계나 통신, 측정 시스템에 핵심 부품으로 인정 받아왔다. 특히, 소자의 측면에서 입사되어 오는 광 신호를 검출하여 전기신호로 바꾸어주는 구조의 검출기는 빠른 속도로 신호를 처리하면서도 높은 감도를 가질 수 있어 큰 관심의 대상이 되어 왔다. 그러나 이와 같은 훌륭한 성능에도 불구하고, 소자 제작의 어려움과 낮은 신뢰성 등은 소자의 유용성에 의심을 가지게 하는 역할을 하였다. (중략)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.13-16
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• 2004

The reliability of 1.550m-wavelength InGaAs mesa waveguide photodiodes(WGPDs), which developed for 40-Gbps optical receiver applications, fabricated by metal organic chemical vapor deposition is investigated. Reliability is examined by both high-temperature storage tests and the accelerated life tests by monitoring dark current and breakdown voltage. The median device lifetime and the activation energy of the degradation mechanism are computed for WGPD test structures. From the accelerated life test results, the activation energy of the degradation mechanism and median lifetime of these devices in room temperature are extracted from the log-normal failure model by using average lifetime and the standard deviation of that lifetime in each test temperature. It is found that the WGPD structure yields devices with the median lifetime of much longer than $10^6$ h at practical use conditions. Consequently, this WGPD structure has sufficient characteristics for practical 40-Gbps optical receiver modules.

• Journal of the Korean Society for Precision Engineering
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• v.16 no.2 s.95
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• pp.74-81
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• 1999

The integrated chip of optical micro-encoder was fabricated and the feasibility as displacement measurement device was confirmed. The geometry of micro-encoder was designed to utilize the optical interference effect on the second order of diffracted beams. The hybrid-type micro-encoder consisted with light emitting diode, photodiode, polyimide wave-guide and micro-lens provides stable micro-encoding results for high speed displacements. The measurement shows the resolution of displacement of 1.00 +/- 0.02 ${\mu}m$ for the grating with scale pitch of 2.0${\mu}m$.