• 제어로봇시스템학회논문지
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• 제15권12호
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• pp.1240-1245
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• 2009

The throughput characteristics of the cluster tool with dual blade robot are analyzed. Using equipment's cycle time chart of the equipment, simple analytic form of the throughput is derived. Then, several important throughput characteristics are analyzed by the throughput formula. First, utilization of the process chamber and the robot are maximized by assigning the equipment to the process whose processing time is near the critical process time. Second, rule for selecting optimal number of process chambers is suggested. It is desirable to select a single process chamber plus a single robot structure for relatively short time process and multi process chambers plus a single robot, namely cluster tool for relatively long time process. Third, throughput variation between equipments due to the wafer transfer time variation is analyzed, especially for the process whose processing time is less than critical process time. And the throughput and the wafer transfer time of the equipments in our fabrication line are measured and compared to the analysis.

• 한국생산제조학회지
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• 제20권5호
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• pp.666-672
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• 2011

In this paper, we describes the development of automatic inspection system for detecting the defects on photovoltaic wafer by using machine vision. Until now, The defect inspection process was manually performed by operators. So these processes caused the produce of poorly-made articles and inaccuracy results. To improve the inspection accuracy, the inspection system is not only configured, but the image processing algorithm is also developed. The inspection system includes dimensional verification and pattern matching which compares a 2-D image of an object to a pattern image the method proves to be computationally efficient and accurate for real time application and we confirmed the applicability of the proposed method though the experience in a complex environment.

• 한국정보처리학회:학술대회논문집
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• 한국정보처리학회 2015년도 추계학술발표대회
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• pp.1509-1511
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• 2015

Defect detection is one of the most challenging problems in industrial quality control. In this study we developed a vision-based defect detection system for wafer production. To achieve high-accuracy detection, Otsu method was improved so that it can handle both unimodal and bimodal distributions. After thresholding, detected defect regions in the wafer are classified and grouped into user-defined defect categories. The experimental result has proved the efficiency of our system.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2007년도 춘계학술대회 논문집
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• pp.79-83
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• 2007

We have developed a compact and cost-effective camera module on the basis of wafer-scale replication technology. A multiple-layered structure of several aspheric lenses in a mobile camera module is first assembled by bonding multiple glass-wafers on which 2-dimensional replica arrays of identical aspheric lenses are UV-embossed, followed by dicing the stacked wafers and packaging them with image sensor chips. We have demonstrated a VGA camera module fabricated by the wafer-scale replication processing with various UV-curable polymers having refractive indices between 1.4 and 1.6, and with three different glass-wafers of which both surfaces are embossed as aspheric lenses having 200 um sag-height and aspheric-coefficients of lens polynomials up to tenth-order. We have found that precise compensation in material shrinkage of the polymer materials is one of the most technical challenges, in order to achieve a higher resolution in wafer-scaled lenses for mobile camera modules.

• 한국전기전자재료학회논문지
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• 제25권5호
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• pp.353-360
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• 2012

As semiconductor device technology continuously shrinks, low-open area etch process prevails in front-end etch process, such as contact etch as well as one cylindrical storage (OCS) etch. To eliminate over loaded wafer processing test, it is commonly performed to emply diced small coupons at stage of initiative process development. In nominal etch condition, etch responses of whole wafer test and coupon test may be regarded to provide similar results; however, optical emission spectroscopy (OES) which is frequently utilize to monitor etch chemistry inside the chamber cannot be regarded as the same, especially etch mask is not the same material with wafer chuck. In this experiment, we compared OES data acquired from two cases of etch experiments; one with coupon etch tests mounted on photoresist coated wafer and the other with coupons only on the chuck. We observed different behaviors of OES data from the two sets of experiment, and the analytical results showed that careful investigation should be taken place in OES study, especially in coupon size etch.

• 한국표면공학회지
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• 제47권5호
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• pp.227-232
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• 2014

In this study, we propose the application of doping process technology for atmospheric pressure plasma. The plasma treatment means the wafer is warmed via resistance heating from current paths. These paths are induced by the surface charge density in the presence of illuminating Argon atmospheric plasmas. Furthermore, it is investigated on the high-concentration doping to a selective partial region in P type solar cell wafer. It is identified that diffusion of impurities is related to the wafer temperature. For the fixed plasma treatment time, plasma currents were set with 40, 70, 120 mA. For the processing time, IR(Infra-Red) images are analyzed via a camera dependent on the temperature of the P type wafer. Phosphorus concentrations are also analyzed through SIMS profiles from doped wafer. According to the analysis for doping process, as applied plasma currents increase, so the doping depth becomes deeper. As the junction depth is deeper, so the surface resistance is to be lowered. In addition, the surface charge density has a tendency inversely proportional to the initial phosphorus concentration. Overall, when the plasma current increases, then it becomes higher temperatures in wafer. It is shown that the diffusion of the impurity is critically dependent on the temperature of wafers.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1995년도 제8회 학술발표회 논문개요집
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• pp.21-21
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• 1995

• Transactions on Electrical and Electronic Materials
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• 제8권1호
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• pp.5-10
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• 2007

Using a reference slurry, ammonium dodecyl sulfate (ADS), an anionic and environmentally friendly surfactant, was investigated as an alternative to BTA for its inhibition and lubrication characteristics. Results demonstrated that the inhibition efficiency of ADS was superior to that of BTA. Coefficient of friction (COF) was the lowest when the slurry contained ADS. This suggested that adsorbed ADS on the surface provided lubricating action thereby reducing the wear between the contacting surfaces. Temperature results were consistent with the COF and removal rate data. ADS showed the lowest temperature rise again confirming the softening effect of the adsorbed surfactant layer and less energy dissipation due to friction. Spectral analysis of shear force showed that increasing the pad-wafer sliding velocity at constant wafer pressure shifted the high frequency spectral peaks to lower frequencies while increasing the variance of the frictional force. Addition of ADS reduced the fluctuating component of the shear force and the extent of the pre-existing stick-slip phenomena caused by the kinematics of the process and collision event between pad asperities with the wafer. By contrast, in the case of BTA, there were no such observed benefits but instead undesirable effects were seen at some polishing conditions. This work underscored the importance of real-time force spectroscopy in elucidating the adsorption, lubrication and inhibition of additives in slurries in CMP.

• 한국세라믹학회지
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• 제42권7호
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• pp.455-460
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• 2005

Deposition of TiN$_{x}$ film was conducted with a DC sputtering technique. The effect of the processing parameters such as substrate temperature, deposition time, working pressure, bias power, and volumetric flowing rate ratio of Ar to N$_{2}$ gas on the resistivity of TiN$_{x}$ film was systematically investigated. Three kinds of substrates, soda-lime glass, (100) Si wafer, and 111m thermally grown (111) SiO$_{2}$ wafer were used to explore the effect of substrate. The phase of TiN$_{x}$ film was analyzed by XRD peak pattern and deposition rate was determined by measuring the thickness of TiNx film through SEM cross-sectional view. Resistance was obtained by 4 point probe method as a function of processing parameters and types of substrates. Finally, optimum condition for synthesizing TiN$_{x}$ film having lowest resistivity was discussed.

• 제어로봇시스템학회논문지
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• 제5권4호
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• pp.403-410
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• 1999

In this study, a parallel algorithm has been developed that can quickly solve the optiaml control problem of large-scale dynamic systems. The algorithm adopts the sequential quadratic programming methods and achieves domain decomposition-type parallelism in computing sensitivities for search direction computation. A silicon wafer thermal process problem has been solved using the algorithm, and a parallel efficiency of 45% has been achieved with 16 processors. Practical methods have also been investigated in this study as a way to further speed up the computation time.