• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.189.1-189.1
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• 2013

Titanium dioxide (TiO2) is a wide bandgap semiconductor possessing photochemical stability and thus widely used for photocatalysis. However, enhancing photocatalytic efficiency is still a challenging issue. In general, the efficiency is affected by physio-chemical properties such as crystalline phase, crystallinity, exposed crystal facets, crystallite size, porosity, and surface/bulk defects. Here we propose an alternative approach to enhance the efficiency by studying interfaces between thin TiO2 layers to be stacked; that is, the interfacial phenomena influencing on the formation of porous structures, controlling crystallite sizes and crystallinity. To do so, multi-layered TiO2 thin films were fabricated by using a sol-gel method. Specifically, a single TiO2 thin layer with a thickness range of 20~40 nm was deposited on a silicon wafer and annealed at $600^{\circ}C$. The processing step was repeated up to 6 times. The resulting structures were characterized by conventional electron microscopes, and followed by carrying out photocatalytic performances. The multi-layered TiO2 thin films with enhancing photocatalytic efficiency can be readily applied for bio- and gas sensing devices.

• Bulletin of the Korean Chemical Society
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• v.18 no.7
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• pp.737-740
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• 1997

The influence of cyclic treatments with H2O2/DIW (1 : 10) and HF/DIW (1 : 100) on the roughness of silicon surface in the wet chemical processing was investigated by atomic force microscopy (AFM). During the step of the SC-1 cleaning, there is a large increase in roughness on the silicon surface which will result in the poor gate oxide breakdown properties. The roughness of the silicon wafer after the SC-1 cleaning step was reduced by cyclic treatments of hydrogen peroxide solution and hydrofluoric acid solution instead of HF-only cleaning. AFM images after each step clearly illustrated that the average roughness of silicon surface after three times treatments with H2O2 and HF solutions was reduced by 10 times compared with that after the SC-1 cleaning step.

• Clean Technology
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• v.22 no.4
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• pp.274-280
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• 2016

In this study, it was to develop a chemical method that can recycle the cutting oil which accounts for about 25% of the cost of the process among containing materials of silicon waste sludge generated in the process for producing a solar cell wafer. The 7 types of reagents have been used, including acetone, HCl, NaOH, KOH, $Na_2CO_3$, HF, $CH_2Cl_2$, etc. for this experiment. And It was carried out at a speed of 3000 rpm for 60 minutes centrifugation after performing a reaction with a waste sludge at various concentrations. As a result, the best reagents and conditions for separating the solid such as a silicon powder and a metal powder and liquid cutting oil were identified as 0.3 N NaOH. It is found to be pH 6.05 in a post-processing recycled cutting oil with 0.3 N NaOH after reaction of waste sludge and 0.1 N HCl which is effective to remove metal powder in order to adjust the pH to suit the properties of the weak acid is a commercially available cutting oil and it showed excellent turbidity than when applied to sludge with 0.3 N NaOH alone. The results of FT-IR analysis which can compare the properties of the commercially available cutting oil shows it has a possibility of recycling oil. The cutting oil recovery rate obtained through the experiment was found to be 86.9%.

• Journal of Sensor Science and Technology
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• v.5 no.3
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• pp.101-108
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• 1996

The silicon $p^{+}-n$ junction diodes were fabricated. The fabricated wafers were treated by single or double annealing steps. Single annealing process was performed by diffusion of either Au or Pt into the wafer under the oxygen or nitrogen ambient at $800{\sim}1010^{\circ}C$. Second annealing step involved additional annealing of the single annealed wafer under the oxygen ambient at $800{\sim}1010^{\circ}C$ for one hour. Electrical characteristics of the diodes were investigated to evaluate the effect of the annealing treatments. In the case of single annealing under nitrogen ambient at $1010^{\circ}C$ for one hour, the amount of leakage current of Pt diffused diode was 75 times larger than that of Au diffused one. The optimum processing condition to achieve high speed silicon $p^{+}-n$ junction diodes from this study was obtained when Pt diffused wafer(treated under the nitrogen ambient at $1010^{\circ}C$ for one hour) was secondly annealed in an oxygen ambient at $800^{\circ}C$ for one hour. The resulting leakage current of two step annealed diodes were remarkably reduced to 1/1100 of the single annealed one. The diode characteristics such as recovery time, breakdown voltage, leakage current, and forward voltage were 4ns, 138V, 1.72nA, and 1V, respectively.

• Resources Recycling
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• v.17 no.2
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• pp.36-45
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• 2008

Pickling of oxidized 304 stainless steel has been investigated using rotating disk electrode in waste acid solutions generated from the etching process of silicon wafer in order to recycle them. The waste acid solution contained acetic, nitric, hydrofluoric acids, and silicon of $19.6g/L^{-1}$. Electrochemical behavior during the pickling was distinctively different between the original and silicon-removed acid solutions. Open circuit potential was continuously changed in the original solution, while it was discontinuously changed and fluctuated in the silicon-removed solution. Fast and abrupt removal of surface oxide layer with severe pitting was observed in the silicon-removed solution. It was found that solution temperature had the most influential effect on glossiness. Surface glossiness after pickling was decreased with solution temperature. At the same condition, the glossiness was higher in the original solution than in the silicon-removed solution.

• The Transactions of the Korea Information Processing Society
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• v.4 no.6
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• pp.1495-1507
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• 1997

Among a number of approaches to text compression, adaptive dictionary schemes based on a sliding window have been very frequently used due to their high performance. The LZ77 algorithm is the most efficient algorithm which implements such adaptive schemes for the practical use of text compression. This paperpresents a VLSI architecture designed for processing the LZ77 algorithm in parallel. Compared with the other VLSI architectures developed so far, the proposed architecture provides the more viable solution to high performance with regard to its throughput, efficient implementation of the VLSI systolic arrays, and hardware scalability. Indeed, without being affected by the size of the sliding window, our system has the complexity of O(N) for both the compression and decompression and also requires small wafer area, where N is the size of the input text.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.47-50
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• 1991

LPM(Linear Pulse Motor) provide direct and precise position control of bidirectional linear motion. LPM is not subject to the same linear velocity and acceleration limitations inherent in systems converting rotary to linear motion such as lead screws, rack and pinion, belt and pulley drives. With LPM, all the thrust force generated by the motor is efficiently applied directly to the load. And speed, distance, and acceleration are easily programmed in a highly repeatable fashion. Potential industrial and application fields of LPM include PCB assembly, industrial sewing machines, automatic inspection, coil winder, medical uses, conveyer system, laser cut and trim systems, semiconductor wafer processing, OA instruments etc. This paper describes various design parameter of LPM such as magnetic ciucuit construction methods, phase number and tooth number per pole, permanent magnet and coil mmf, tooth geometries. And to solve the problems of existing control methods, in this paper, a new control method of the LPM is proposed throughout modern control theory.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.32 no.3
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• pp.209-216
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• 2008

The application of focused ion beam (FIB) depends on the optimal interaction of the operation parameters between operating parameters which control beam and samples on the stage during the FIB deposition process. This deposition process was investigated systematically in C precursor gas. Under the fine beam conditions (30kV, 40nm beam size, etc), the effect of considered process parameters - dwell time, beam overlap, incident beam angle to tilted surface, minimum frame time and pattern size were investigated from deposition results by the design of experiment. For the process analysis, influence of the parameters on FIB-CVD process was examined with respect to dimensions and constructed shapes of single and multi- patterns. Throughout the single patterning process, optimal conditions were selected. Multi-patterning deposition were presented to show the effect of on-stage parameters. The analysis have provided the sequent beam scan method and the aspect-ratio had the most significant influence for the multi-patterning deposition in the FIB processing. The bitmapped scan method was more efficient than the one-by-one scan type method for obtaining high aspect-ratio (Width/Height > 1) patterns.

• Journal of the Korean Vacuum Society
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• v.11 no.1
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• pp.16-21
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• 2002

Selective epitaxial growth(SEG) of silicon were performed at low temperature under an ultraclean environment below $1000^{\circ}C$ using ultraclean $Si_2H_6$ and $H_2$ gases ambient in low pressure chemical vapor deposition(LPCVD). As a result of ultraclean processing, epitaxial Si layers with good quality were obtained for uniform and SEG wafer at temperatures range 600~$710^{\circ}C$ and an incubation period of Si deposition only on $SiO_2$ was found. Low-temperature Si selectivity deposition condition and epitaxy on Si were achieved without addition of HCl. The epitaxial layer was found to be thicker than the poly layer deposited over the oxide. Incubation period prolonged for 20~30 sec can be obtained by $O_2$addition. The surface morphologies & cross sections of the deposited films were observed with SEM, The structure of the Si films was evaluated XRD.

• Transactions of Materials Processing
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• v.13 no.1
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• pp.9-14
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• 2004

Recently, various bulk metallic glasses (BMG's) having good mechanical and chemical properties were developed. BMG's can easily be deformed in the supercooled liquid region, via viscous flow mechanism. By using the viscous flow, the very low pressure is needed to deform the materials. In this study, we investigated the structural transition and deformation behavior of Vitreloy 1 (Zr/sub 41.2/Ti/sub 13.8/Cu/sub 12.5/Ni/sub 10/Be/sub 22.5/) using TMA and DSC. We applied the results to the micro forming process. The forming condition was chosen based on the viscosity data from TMA, and Si wafer with micro patterns on the surface was used as a forming die. The deformed surface was analyzed by SEM and 3D Surface Profiling System. The alloy showed good replication of the patterns. Quantitative measurement of roughness was useful to evaluate the replication. Surface condition of the deformed surface was determined by the initial surface condition.