• Composites Research
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• v.20 no.5
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• pp.49-55
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• 2007

Nanocomposite blade for dicing semiconductor wafer is investigated for micro/nano-device and micro/nano-fabrication. While metal blade has been used for dicing of silicon wafer, polymer composite blades are used for machining of quartz wafer in semiconductor and cellular phone industry in these days. Organic-inorganic material selection is important to provide the blade with machinability, electrical conductivity, strength, ductility and wear resistance. Maintaining constant thickness with micro-dimension during shaping is one of the important technologies fer machining micro/nano fabrication. In this study the fabrication of blade by wet processing of mixing conducting nano ceramic powder, abrasive powder phenol resin and polyimide has been investigated using an experimental approach in which the thickness differential as the primary design criterion. The effect of drying conduction and post pressure are investigated. As a result wet processing techniques reveal that reliable results are achievable with improved dimension tolerance.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.39-40
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• 2011

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2006.10a
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• pp.125-134
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• 2006

Process & mechanism $\blacklozenge$ The process consists from two steps which are laser processing step and separation steop. $\blacklozenge$ The wavelength of laser beam is transmissible wavelength for the wafer. However, inside of Si wafer is processed due to temperature dependence of optical absorption coefficient Advantage & Application $\blacklozenge$ Advantages are high speed dicing, no debris contaminants, completely dry process, etc. $\blacklozenge$ The cutting edges were fine, The lifetime and endurances did not degrade the device characteristics $\blacklozenge$ A separation of a wafer with DAF was introduced as an application for SiP

• Proceedings of the KIEE Conference
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• 2004.11c
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• pp.478-480
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• 2004

다이아몬드 톱날을 이용한 얇은 Si 웨이퍼의 기계적인 다이싱은 chipping, crack 등의 문제점을 발생시킨다. 또한 stacked die 나 multi-chip등과 같은 3D-WLP(wafer level package)에서 via를 생성하기 위해 현재 사용되는 화학적 etching은 공정속도가 느리고 제어가 힘들며, 공정이 복잡하다는 문제점을 가지고 있다. 이러한 문제점을 해결하기 위해 현재 연구되고 있는 분야가 레이저를 이용한 웨이퍼 다이싱 및 드릴링이다. 본 논문에서는 UV 레이저를 이용한 얇은 Si 웨이퍼 다이싱 및 드릴링 시스템에 대해 소개하고, 웨이퍼 다이싱 및 드릴링 실험결과를 바탕으로 적절한 레이저 및 공정 매개변수에 대해 설명한다.

• Journal of Applied Reliability
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• v.16 no.1
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• pp.26-31
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• 2016

Purpose: The purpose of this study was to investigate the effect of grinding process and thickness on the fracture strength of silicon die used for semiconductor substrate. Method: Silicon wafers with different thickness from $200{\mu}m$ to $50{\mu}m$ were prepared by chemical mechanical polishing (CMP) and dicing before grinding (DBG) process, respectively. Fracture load was measured by point load test for 50 silicon dies per each wafer. Results: Fracture strength at the center area was lower than that at the edge area of the wafer fabricated by DBG process, while random distribution of the fracture strength was observed for the CMPed wafer. Average fracture strength of DBGed specimens was higher than that of the CMPed ones for the same thickness of wafer. Conclusion: DBG process can be more helpful for lowering fracture probability during the semiconductor fabrication process than CMP process.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.1
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• pp.27-31
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• 2009

In this paper, the polymer adhesive bonding technology using wafer-level technology was investigated and warpage results were analyzed. Si and glass wafer was bonded after adhesive polymer layer and dam pattern for uniform state was patterned on glass wafer. In this study, warpage result decreased as the low of bonding temperature of Si wafer, bonding pressure and height of adhesive bonding layer. The availability of adhesive polymer bonding was confirmed by TC, HTC, Humidity soak test after dicing. The result is that defect has not found without reference to warpage.

• The Magazine of the IEIE
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• v.40 no.12
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• pp.59-64
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• 2013

• Journal of the Korea Society of Computer and Information
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• v.14 no.10
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• pp.55-61
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• 2009

This paper describes a point of production(POP) system which collects and manages real-time shop floor machining information in a wafer dicing process. The system are composed of POP terminal, line controller and network. In the configuration of the system, LAN and RS485 network are used for connection with the upper management system and down stratum respectively. As a bridge between POP terminal and server, a line controller is used. The real-time information which is the base of production management are collected from information resources such as machine, product and worker. The collected information are used for the calculation of optimal cutting condition. The collection of the information includes cutting speed, spout of pure water, accumulated count of cut in process for blade and wafer defect. In order to manage machining information in wafer dicing process, production planning information is delivered to the shop floor, and production result information is collected from the shop floor, delivered to the server and used for managing production plan. From the result of the system application, production progress status, work and non-working hour analysis for each machine, and wafer defect analysis are available, and they are used for quality and productivity improvements in wafer dicing process. A case study is implemented to evaluate the performance of the system.

• Journal of the Korean Ceramic Society
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• v.46 no.1
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• pp.30-34
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• 2009

A Sand blasting technology has been used to address via and trench processing of glass wafer of optic semiconductor packaging. Manufactured sand blast that is controlled by blast nozzle and servomotor so that 8" wafer processing may be available. 10mm sq test device manufactured by Dry Film Resist (DFR) pattern process on 8" glass wafer of $500{\mu}m's$ thickness. Based on particle pressure and the wafer transfer speed, etch rate, mask erosion, and vertical trench slope have been analyzed. Perfect 500 um tooling has been performed at 0.3 MPa pressure and 100 rpm wafer speed. It is particle pressure that influence in processing depth and the transfer speed did not influence.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.127-128
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• 2005

UV-curable pressure sensitive adhesives were prepared by blending acrylic copolymer, copolymerized with butyl acrylate (BA), acrylic acid (AA) and vinyl acetate (VAc) by solution polymerization, triethyl amine (TEA) and trimethylolpropane triacrylate (TMPTA). The PSAs were evaluated by peel strength with varying contents of TMPTA and UV dose, and also glass transition temperature($T_g$) of PSAs were measured. When exposed on UV irradiation, the PSAs showed the decreased peel strength and increased $T_g$. And following UV irradiation, the PSAs did not leave any residue on wafer after peel off PSA.