• Proceedings of the KIEE Conference
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• 2006.04a
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• pp.327-329
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• 2006

In this paper, the cutting qualities by laser dicing and fracture strength of a silicon die is investigated. Laser micromachining is the non-contact process using thermal ablation and evaporation mechanisms. By these mechanisms, debris is generated and stick on the surface of wafer, which is the problem to apply laser dicing to semiconductor manufacture process. Unlike mechanical sawing using diamond blade, chipping on the surface and crack on the back side of wafer isn't made by laser dicing. Die strength by laser dicing is measured via the three-point bend test and is compared with the die strength by mechanical sawing. As a results, die strength by laser dicing shows a decrease of 50% in compared with die strength by mechanical sawing.

• Journal of the Semiconductor & Display Technology
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• v.5 no.3 s.16
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• pp.5-10
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• 2006

This paper investigates cutting qualities after laser dicing and predicts the problems that can be generated by laser dicing. And through 3 point bending test, die strength is measured and the die strength after laser dicing is compared with the die strength after mechanical sawing. Laser dicing is chiefly considered as an alternative to overcome the defects of mechanical sawing such as chipping on the surface and crack on the back side. Laser micromachining is based on the thermal ablation and evaporation mechanism. As a result of laser dicing experiments, debris on the surface of wafer is observed. To eliminate the debris and protect the surface, an experiment is done using a water soluble coating material and ultrasonic. The consequence is that most of debris is removed. But there are some residues around the cutting line. Unlike mechanical sawing, chipping on the surface and crack on the back side is not observed. The cross section of cutting line by laser dicing is rough as compared with that by mechanical sawing. But micro crack can not be seen. Micro crack reduces die strength. To measure this, 3 point bending test is done. The die strength after laser dicing decreases to a half of the die strength after mechanical sawing. This means that die cracking during package assembly can occur.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.17 no.3
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• pp.53-58
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• 2008

This study was conducted to evaluate the flatness of the porous type of dicing chuck. Two measurement systems for a vacuum chuck with a porous type of ceramic plate were prepared using a digital indicator and a laser interferometer. 6 inch of silicon and glass wafer were also used. Vacuum pressure from 100mmHg to 700mmHg by 100mmHg was increased. From experiments, chucked-wafer flatness was converged to the dicing chuck flatness itself even though the repeatability of contact method using indicator was unstable. Finally, the chuck flatness was estimated below $2{\mu}m$ with peak-to valley value.

• Journal of the Korean Society for Precision Engineering
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• v.17 no.6
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• pp.185-191
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• 2000

Recently, a slightest influence to the circuit can be a great damage because the size of semiconductor smaller. It must be controlled the chippingless dicing process and the precision dicing without any damage to tile circuit. In this study, the relationship between chipping effect and the force of dicing was analysed. The rate of chipping was decreased as the farce of dicing decreased. It was also examined that the farce of dicing decreased according to the lower feed rate and higher blade speed. The lower feed rate and the higher blade speed must be controlled to achieve the chippingless process.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.63-68
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• 2014

For a nanoscale Cu/low-k wafer, inter-layer dielectric (ILD) and metal layers peelings, cracks, chipping, and delamination are the most common dicing defects by traditional diamond blade saw process. Sidewall void in sawing street is one of the key factors to bring about cracks and chipping. The aim of this research is to evaluate laser grooving & mechanical sawing parameters to eliminate sidewall void and avoid top-side chipping as well as peeling. An ultra-fast pico-second (ps) laser is applied to groove/singulate the 28-nanometer node wafer with Cu/low-k dielectric. A series of comprehensive parametric study on the recipes of input laser power, repetition rate, grooving speed, defocus amount and street index has been conducted to improve the quality of dicing process. The effects of the laser kerf geometry, grooving edge quality and defects are evaluated by using scanning electron microscopy (SEM) and focused ion beam (FIB). Experimental results have shown that the laser grooving technique is capable to improve the quality and yield issues on Cu/low-k wafer dicing process.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.05a
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• pp.251-254
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• 2006

In this paper, cutting qualifies and fracture strength of silicon dies by laser dicing are investigated. Laser micromachining is the non-contact process using thermal ablation and evaporation mechanisms. By these mechanisms, debris is generated and stick on the surface of wafer, which is the problem to apply laser dicing to semiconductor manufacture process. Unlike mechanical sawing using diamond blade, chipping on the surface and crack on the back side of wafer isn't made by laser dicing. Die strength by laser dicing is measured via the three-point bending test and is compared with the die strength by mechanical sawing. As a results, die strength by the laser dicing shows a decrease of 50% in compared with die strength by the mechanical sawing.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.1-4
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• 2009

This work shows how the adoption of a dual-dicing process for silicon wafer separation affects the thermal-cycling reliability (i.e. $-65^{\circ}C$ to $150^{\circ}C$) of the semiconductor devices utilizing lead-on-chip (LOC) die attach technique. In-situ examinations show that conventional single-dicing process directly attacks the edge region of diced devices but dual-dicing process effectively protects the edge region of diced devices from dicing-induced mechanical damage. Probably, this is because the preferential and sacrificial fracture of notched regions induced on the active surface of wafers saves the edge regions. It was also investigated through thermal-cycling tests that the number of thermal-cycling induced failures is much lower at the dual-dicing process than the single-dicing process.

• Journal of Sensor Science and Technology
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• v.31 no.6
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• pp.361-365
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• 2022

Advanced packaging demands are driven by the need for dense integration systems. Consequently, stacked packaging technology has been proposed instead of reducing the ultra-fine patterns to secure economic feasibility. This study proposed an effective packaging process technology for semiconductor devices using a 9-inch dicing die attach film (DDAF), wherein the die attach and dicing films were combined. The process involved three steps: tape lamination, dicing, and bonding. Following the grinding of a silicon wafer, the tape lamination process was conducted, and the DDAF was arranged. Subsequently, a silicon wafer attached to the DDAF was separated into dies employing a blade dicing process with a two-step cut. Thereafter, one separated die was bonded with the other die as a substrate at 130 ℃ for 2 s under a pressure of 2 kgf and the chip was hardened at 120 ℃ for 30 min under a pressure of 10 kPa to remove air bubbles within the DAF. Finally, a curing process was conducted at 175 ℃ for 2 h at atmospheric pressure. Upon completing the manufacturing processes, external inspections, cross-sectional analyses, and thermal stability evaluations were conducted to confirm the optimality of the proposed technology for application of the DDAF. In particular, the shear strength test was evaluated to obtain an average of 9,905 Pa from 17 samples. Consequently, a 3D integration packaging process using DDAF is expected to be utilized as an advanced packaging technology with high reliability.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.12
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• pp.105-114
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• 2003

In this study, a dicing machine with vision system was built and an algorithm for automatic alignment was developed for dual camera system. The system had a macro and a micro inspection tool. The algorithm was formulated from geometric relations. When a wafer was put on the cutting stage within certain range, it was inspected by vision system and compared with a standard pattern. The difference between the patterns was analyzed and evaluated. Then, the stage was moved by x, y, $\theta$ axes to compensate these differences. The amount of compensation was calculated from the result of the vision inspection through the automatic alignment algorithm. The stage was moved to the compensated position and was inspected by vision for checking its result again. Accuracy and validity of the algorithm was discussed from these data.

• Journal of the Korean Society for Precision Engineering
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• v.17 no.3
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• pp.47-57
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• 2000

In this study, PC-based dicing machine and driving software were constructed for the purpose of automation of wafer cutting process. To automate the machine, hard automation including vision, loading, and software were considered in the development. Auto loading device and vision system were adopted for the increase of productivity, GUI software programmed for the expedient operation. The dicing machine is operated by the control algorithm and some parameters. It is verified that this kind of PC based automation has a great potential compared with the conventional dicing machine when applied to manufacturing some kinds of wafers as a test purpose.