• 제어로봇시스템학회:학술대회논문집
• /
• 2000.10a
• /
• pp.161-161
• /
• 2000

The clean mobile robot for wafer transfer is AGV that carry each wafer to each equipment. It has wafer handling technology, wafer ID recognition technology, position calibration technology using vision system, and anti-vibration technology. Wafer loading/unloading working accuracy is within ${\pm}$1mm, ${\pm}$3$^{\circ}$. By application of this AGV, we can reduce the manufacturing tack time and bring cost down of equipment.

• Journal of the Semiconductor & Display Technology
• /
• v.9 no.1
• /
• pp.23-28
• /
• 2010

In this paper, wafer drop from wafer guide mechanism, which is one of the serious problems in water transfer robot, is analyzed, and new wafer guide mechanisms are proposed to minimize this drop. Three types of new wafer guide mechanisms are proposed: roller type, gear type and L-shape rocker type. We choose one of the proposed mechanism, which is roller type, and verified this mechanism through real transfer experiment. Wafer picking up test is conducted with initial aligning error for simulating the wafer drop. Number of drop is compared between conventional mechanism and proposed mechanism. As a result, we can find the proposed mechanism can reduce the number of wafer drop dramatically.

• Journal of Mechanical Science and Technology
• /
• v.20 no.9
• /
• pp.1492-1501
• /
• 2006

A transportation system of single wafer has been developed to be applied to semiconductor manufacturing process of the next generation. In this study, the experimental apparatus consists of two kinds of track, one is for propelling a wafer, so called control track, the other is for generating an air film to transfer a wafer, so called transfer track. The wafer transportation speed has been evaluated by the numerical and the experimental methods for three types of nozzle position a..ay (i.e., the front-, face- and rear-array) in an air levitation system. Test facility for 300mm wafer has been equipped with two control tracks and one transfer track of 1500mm length from the starting point to the stopping point. From the present results, it is found that the experimental values of the wafer transportation speed are well in agreement with the computed ones. Namely, the computed values of the maximum wafer transportation speed $V_{max}$ are slightly higher than the experimental ones by about $15{\times}20%$. The disparities in $V_{max}$ between the numerical and the experimental results become smaller as the air velocity increases. Also, at the same air flow rate, the order of wafer transportation speeds is : $V_{max}$ for the front-array > $V_{max}$ for the face-array > $V_{max}$ for the rear-array. However, the face-array is rather more stable than any other type of nozzle array to ensure safe transportation of a wafer.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2008.06a
• /
• pp.541-542
• /
• 2008

• 정보저장시스템학회:학술대회논문집
• /
• 2005.10a
• /
• pp.22-25
• /
• 2005

In this research, a wafar-level transfer method of cantilever array on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride ($Si_3N_4$) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric $Si_3N_4$ cantilevers. In this process, we did not use a SOI wafer but a conventional p-type wafer for the fabrication of the thermo-piezoelectric $Si_3N_4$ cantilever arrays. Furthermore, we have developed a very simple transfer process, requiring only one step of cantilever transfer process for the integration of the CMOS wafer and cantilevers. Using this process, we have fabricated a single thermo-piezoelectric $Si_3N_4$ cantilever, and recorded 65nm data bits on a PMMA film and confirmed a charge signal at 5nm of cantilever deflection. And we have successfully applied this method to transfer 34 by 34 thermo-piezoelectric $Si_3N_4$ cantilever arrays on a CMOS wafer. We obtained reading signals from one of the cantilevers.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.32 no.2
• /
• pp.149-157
• /
• 2008

During CVD process of semiconductor wafer fabrication, maintaining the uniformity of temperature distribution at wafer top surface is one of the key factors affecting the quality of final products. Effect of contact conductance between wafer and hot plate on predicted temperature of wafer was investigated. The validity of opaque wafer assumption was also examined by comparing the predicted results with Discrete Ordinate solutions accounting for semitransparent radiative characteristics of silicon. As the contact conductance increases predicted wafer temperature increases and the differences between maximum and minimum temperatures within wafer and between wafer and hot plate top surface temperatures decrease. The opaque assumption always overpredicted the wafer temperature compared to semitransparent calculation. The influences of surrounding reactor inner wall temperature and hot plate configuration are then discussed.

• Journal of the Korean Society of Visualization
• /
• v.13 no.3
• /
• pp.24-28
• /
• 2015

The temperature of the wafer batch in the furnace was calculated and its visualized temperature field was analyzed. The main heat transfer mechanisms from the heater wall to the wafers were radiation and conduction, and the finite difference method was used to analyze the complex heat transfer including those two mechanisms. The visualized temperature field shows that the direction of the heat flux in the wafer batch varies during the heating process, and the heat in the wafer batch diffuses faster by conduction within the wafer than by radiation between the wafers, in the condition of the constant temperature at the heater wall and cap.

• Journal of the Semiconductor & Display Technology
• /
• v.4 no.1 s.10
• /
• pp.35-41
• /
• 2005

An air levitation type wafer transfer system is composed of control and transfer track. Wafer transfer speed is mainly affected by air velocity of propulsion nozzle. In this study, the propulsion force coefficient was evaluated experimentally for the nozzle with 0.5mm, 0.8mm, and 1.0mm diameter. As a result, the propulsion force was largest in the smallest size of nozzle at same air velocity. The propulsion force coefficient of nozzle increases with reducing diameter of nozzle. This increment of propulsion force coefficient was enlarged remarkably at the 0.5mm diameter of nozzle.

• Journal of the Semiconductor & Display Technology
• /
• v.2 no.3
• /
• pp.31-36
• /
• 2003

On this study, an E.E(End-Effector) for the 300 mm wafer transfer robot system is newly suggested. It is a mechanical type with $180^{\circ}$ rotating ranges and is composed of 3-point arms, two plate springs and single-axis DC motor controlled by microchip. To design, relationship between the gripping force and the wafer deformation is analyzed by FEM. By analytic results, the gripping force for 300 mm wafer is confirmed as 255~274 gf. From experimental results on gripping force, repeatable position accuracy and gripping cycle times in a wafer cleaning system, we confirmed that the suggested E.E was well designed to satisfiy on the required performance for 300 mm wafer transfer robot system.

• Transactions of the Society of Information Storage Systems
• /
• v.2 no.2
• /
• pp.96-99
• /
• 2006

In this research, a wafer-level transfer method of cantilever away on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride ($Si_3N_4$) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric $Si_3N_4$ cantilevers. In this process, we did not use a SOI wafer but a conventional p-type wafer for the fabrication of the thermo-piezoelectric $Si_3N_4$ cantilever arrays. Furthermore, we have developed a very simple transfer process, requiring only one step of cantilever transfer process for the integration of the CMOS wafer and cantilevers. Using this process, we have fabricated a single thermo-piezoelectric $Si_3N_4$ cantilever, and recorded 65nm data bits on a PMMA film and confirmed a charge signal at 5nm of cantilever deflection. And we have successfully applied this method to transfer 34 by 34 thermo-piezoelectric $Si_3N_4$ cantilever arrays on a CMOS wafer. We obtained reading signals from one of the cantilevers.