• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2005년도 추계학술대회논문집
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• pp.559-563
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• 2005

The wafer positioning robot used in the semiconductor industry is required to operate at high speed for the improvement of productivity. However, the residual vibration produced by the high speed of the wafer positioning robot makes the life of the robot shorter and the cycle time longer. In this study, the input shaping and the path of the system are designed for the reduction of the residual vibration and the optimization of the cycle time. The followings are the process for the reduction and the optimization; 1)System modeling of wafer positioning robot, 2)Verification of dynamic characteristic of wafer positioning robot, 3)Input shaping plan using impulse response reiteration, 4)Simulation test using simulink, 6)Analysis of result.

• 반도체디스플레이기술학회지
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• 제11권2호
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• pp.33-38
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• 2012

The wafer positioning robot in the semiconductor industry is required to operate at high speed for the improvement of productivity. The residual vibration caused by the high speed of the wafer positioning robot, however, makes the life of the robot shorter and the cycle time longer. In this study, the input shaping and the path of the system are designed for the reduction of the residual vibration and the improvement of the cycle time. The followings are the process for the reduction and the improvement; 1) System modeling of the wafer positioning robot, 2) Verification of dynamic characteristics of the wafer positioning robot, 3) Input shaping plan using impulse response reiteration, 4) Simulation test using SIMULINK program, 5) Analysis of result.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2002년도 ICCAS
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• pp.55.4-55
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• 2002

In the semiconductor fabrication, particle contamination is wide-spread and one of major causes to yield loss. Extensive testing has revealed that even careful handling of wafers during processing may cause photo-resist materials to flake off wafer edges. So, to remove the photo-resist at the outer 5mm of wafers, UV(Ultraviolet) rays are exposed. WEE (Wafer Edge Exposure) process station is the system that exposes the wafer edge as prespecified by controlling the positioning mechanism and maintaining the light intensity level In this work, WEE process station has been designed so as to significantly lower the amount of particle contamination which occurs even during the most r...

• 한국생산제조학회지
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• 제9권1호
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• pp.38-44
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• 2000

The background of this study lies in he investigation of the formation mechanism of ductile mode(nkanometer-size) chips of brittle materials such as fine ceramics glass and silicon. As the first step to achieve this purpose this paper intends to observe the micro-deformation behavior of these materials in sub${\mu}{\textrm}{m}$ depth indentation tests using a diamond indentor. In this study it was developed Ultra-Micro Indentation. Device using the PZT actuator. Experimentally by using the Ultra-Micro Indentation device the micro fracture behavior of the silicon wafer was investigated. It was possible that ductile-brittle transition point in ultimate surface of brittle material can be detected by adding an acoustic emission sensor system to the Ultra-Micro Indentation appartus.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1995년도 추계학술대회 논문집
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• pp.437-441
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• 1995

In this paper, the ultra precision positioning system for servo motor and piezo actuator using dual servo loop control has been developed. For positioning system having long distance with ultra precision, the combination of global stage and micro stage is required. Servo moter and ball screw are used as a master stage and piezo acuator as a fine stage. By using this system, an positional precision witin .+-. 30nm has been achieved at dual servo loop control. When using micro stage, an positional precision within .+-. 10nm has been achieved. This result can be applied to develop semiconductor equipment such as wafer stepper.

• 한국정밀공학회지
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• 제34권2호
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• pp.107-114
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• 2017

In this investigation, we describe a metrological technique for surface and thickness profiles of a silicon (Si) wafer by using a 6 degree of freedom (DOF) stitching method. Low coherence scanning interferometry employing near infrared light, partially transparent to a Si wafer, is adopted to simultaneously measure the surface and thickness profiles of the wafer. For the large field of view, a stitching method of the sub-aperture measurement is added to the measurement system; also, 6 DOF parameters, including the lateral positioning errors and the rotational error, are considered. In the experiment, surface profiles of a double-sided polished wafer with a 100 mm diameter were measured with the sub-aperture of an 18 mm diameter at $10\times10$ locations and the surface profiles of both sides were stitched with the sub-aperture maps. As a result, the nominal thickness of the wafer was $483.2{\mu}m$ and the calculated PV values of both surfaces were $16.57{\mu}m$ and $17.12{\mu}m$, respectively.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.1339-1343
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• 2004

This paper presents a development of the control algorithm and Pick & Placer. The Pick & Placer provides a powerful multi-task system that includes both graphical and remote interface. Users can easily set up sorting parameters and record important data including wafer number, data, and operator information. This System sets up a dustproof device and massively machined components to provide an extremely stable sorting environment. Precise resolution and accuracy result from using machine vision, a pneumatic slide drive and close -looped positioning.

• 한국산학기술학회논문지
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• 제17권6호
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• pp.708-714
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• 2016

오늘날 반도체 분야의 산업에서는 데이터 처리 속도가 빠르고 대용량 데이터 처리 수행 능력을 갖는 반도체 기술 개발이 활발히 진행 되고 있다. 반도체 제작에서 패키징 공정은 칩을 외부 환경으로부터 보호 하고 접속 단자 간 전력을 공급하기 위해 진행하는 공정이다. 근래에는 생산성이 높은 웨이퍼 레벨 패키지 공정이 주로 사용되고 있다. 웨이퍼 레벨 패키지 공정에서 웨이퍼 상의 모든 실리콘 다이는 몰딩 공정 중에 높은 몰딩 압력과 고온의 열 영향을 받는다. 실리콘 다이에 작용하는 몰딩 압력 및 열 영향은 다이 시프트 및 웨이퍼 휨 현상을 초래하며, 이러한 다이 시프트 및 웨이퍼 휨 현상은 후속 공정으로 칩 하부에 구리 배선 제작을 하는데 있어 배선 위치 정밀도의 문제를 발생시킨다. 따라서 본 연구에서는 다이 시프트 최소화를 위한 공정 개발을 목적 으로 다이 시프트 측정 데이터를 수집하기 위해 다이 시프트 비전 검사 장비를 구축하였다.

• Journal of Electrical Engineering and Technology
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• 제7권4호
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• pp.558-563
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• 2012

In this paper, a novel planar type magnetic levitation system without other assistant devices is proposed and it can move with 6 degree of freedom (X, Y, Z, ${\theta}_X$, ${\theta}_Y$, ${\theta}_Z$) in wafer size as well as in nano scale positioning.The mover is composed with 2-D Halbach permanent magnet array and the stator is composed with $10{\times}10$ coil arrays.It was composed in laboratory and tested with short stroke (4 [mm]) and long stroke (160 [mm])movements. The errors of short movement test is [X, Y, Z, ${\theta}_X$, ${\theta}_Y$, ${\theta}_Z$]${\leq}$ [${\pm}200nm$, ${\pm}200nm$, ${\pm}250nm$, ${\pm}3urad$, ${\pm}2urad$, ${\pm}1urad$]The errors of long stroke movement test is [X, Y, Z, ${\theta}_X$, ${\theta}_Y$, ${\theta}_Z$]${\leq}$ [${\pm}200nm$, ${\pm}200nm$, ${\pm}250nm$, ${\pm}1.5urad$, ${\pm}2urad$, ${\pm}0.5urad$].

• 한국광학회지
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• 제28권2호
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• pp.75-82
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• 2017

초정밀도를 요구하는 반도체 소자 공정에서 웨이퍼의 위치와 반복정밀도를 파장의 수백분의 일로 오차가 거의 없는 상태에서 제어하기 위해 위치변위 레이저 간섭계가 필요하다. 특히 제조공정에서는 생산단가의 인하압박으로 인해 웨이퍼의 대형화가 시도되고 있고 이에 따라 넓은 변위량을 측정하면서 나노미터 급의 위치 정밀도를 지닌 레이저 간섭계가 더욱 절실하게 요구된다. 이런 기술적인 문제를 해결하기 위해서 간섭계에 사용되는 송수신 광학계에도 특별한 광학적인 고안이 필요하게 된다. 본 논문에서는, 송수신 광학부로서 단순하게 콜리메이팅 렌즈만을 사용하는 기존의 방식 대신에, GRIN 렌즈-콜리메이팅 렌즈-무초점 광학계로 구성되는 새로운 형식의 조금 복잡한 형태의 광학구조를 제안하였고 이를 통해 반사된 후 되돌아와 간섭계로 결합되는 광신호의 효율을 약 100배 정도 높일 수 있었다.