• 한국세라믹학회지
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• 제31권10호
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• pp.1188-1196
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• 1994

TiN films were deposited onto high speed steel(SKH9) and silicon wafer by plasma-assisted chemical vapor deposition(PACVD) using a TiCl4/N2/H2/Ar gas mixture. The effects of deposition temperature, R.F. power, and H2 concentration on the deposition of TiN were studied. The residual chlorine content and the microhardness of TiN films were also investigated. It was found that TiN films grew with a columnar structure of a strong (200) preferred orientation regardless of the substrate type and the deposition variables. The TiN films consisted of columnar-grains of about 50 to 100 nm in diameter. The columnar grains themselves contained much finer fibrous grains. As deposition temperature increased, the residual chlorine content decreased sharply. R. F. powder enhanced the deposition rate largely. Increasing of H2 concentration had little effect on the residual chlorine.

• 한국전기전자재료학회논문지
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• 제15권2호
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• pp.147-152
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• 2002

Carbon nitride thin films were deposited by reactive sputtering for the hard coating materials on Si wafer and tool steels. When the nitrogen content of carbon nitride film on tool steel is 33.4%, the mean hardness and elastic modulus are 49.34 GPa and 307.2 GPa respectively. The nitrided or carburised surface acts as the diffusion barrier which shows better adhesion of carbon nitride thin film on the steel surface. To prevent nitrogen diffusion from the film, steel substrate can be saturated by nitrogen forming a Fe$_3$N layer. The desirable structure at the surface after carburising is martensite, but sometimes, due to high carbon content an proeutectoid Fe$_3$C structure may form at the grain boundaries, leaving the overall surface brittle and may cause defects.

• 한국표면공학회지
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• 제43권5호
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• pp.238-242
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• 2010

In the present work, the influence of oxide on the Cr-Si-N coatings was investigated for the Cr-Si-O-N coatings on AISI 304 and Si wafer deposited by hybrid system, which combines the DC magnetron sputtering technique and arc ion plating (AIP) using Cr and Si target in an $Ar/N_2/O_2$ gaseous mixture. As the O content in the Cr-Si-N coatings increased, the diffraction patterns of the Cr-Si-O-N coatings showed CrN and $Cr_2O_3$ phases. However, as the O content increased to 28.8 at.%, diffraction peak of $Cr_2O_3$ was disappeared in the Cr-Si-O-N coating. The $d_{200}$ value was decreased with increasing of O content. The average grain size increased from about 40 nm to 65 nm as the O content increased. The maximum micro-hardness of the Cr-Si-O-N coating was obtained 4507 Hk at the O content of 24.8 at.%. The average friction coefficient of the Cr-Si-O-N coatings was gradually decreased by increasing the O content and the average friction coefficient decreased from 0.37 to 0.25 by increasing the O content. These results indicated that amorphous phase was increased in the Cr-Si-O-N coatings by increasing of O content.

• 자원리싸이클링
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• 제31권6호
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• pp.60-65
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• 2022

본 논문에서는 반도체용 실리콘 기판 가공 과정에서 발생한 슬러지 재활용을 위해 탄화 반응에 의한 탄화규소(SiC) 분말 합성 공정을 적용한 결과를 제시하고자 한다. 입수한 슬러지는 실리콘 기판을 탄화규소 연마재를 사용하여 가공하는 과정에서 발생하므로 실리콘과 탄화규소가 혼합된 형태였으며 가공 설비로부터 발생한 철 불순물이 포함되어 있었다. 슬러지는 절삭유가 포함되어 있어 점성이 있는 유체 형태였으며 대기 건조를 통해 분말 형태로 변화된 후 산 세정을 통한 철 성분 제거 및 탄화에 의한 탄화규소 분말 합성 과정을 거치게 된다. 슬러지에 포함된 실리콘과 탄화규소의 비율에 따라 탄화 반응에 필요한 탄소량이 달랐으며 탄화규소의 함량이 커질수록 탄소 부족 현상으로 인해 비화학량론적 탄화물(SiC_x, x<1) 형성이 촉진되어 순수한 탄화규소 합성이 이루어지지 않는 것을 확인하였다. 이러한 비화학량론적 탄화물은 잉여 탄소 추가와 고에너지 밀링에 의한 탄화 반응성 증가를 통해 제거할 수 있었으며 결과적으로 산 세정과 밀링 과정에 의해 슬러지로부터 순수한 탄화규소 분말 합성이 가능함을 확인할 수 있었다.

• 폴리머
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• 제36권3호
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• pp.315-320
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• 2012

아크릴 공중합체의 구조와 다관능성 단량체의 관능성 및 함량을 조절하여 반도체 제조공정에 적합한 자외선 경화형 점착제를 제조하였다. 아크릴 공중합체는 점착력을 부여하는 기본수지로 사용되었고 다관능성 단량체는 광가교 특성으로 인하여 3차원 가교구조와 가교밀도를 변화시키기 위해 사용하였다. 아크릴 공중합체는 단량체 조성에서 2-ethylhexyl acrylate의 함량이 감소할수록 자외선 조사 후의 박리 점착력이 감소하였다. 광경화 특성을 갖는 다관능성 단량체의 탄소 이중결합 관능성이 증가할수록 자외선 조사 후 가교밀도가 증가하여 박리 점착력이 감소하였고 박리 후 웨이퍼 표면에 남게 되는 점착제 잔사물도 크게 감소하였다. 6관능성 단량체를 20 phr 포함하는 광가교형 감압점착제가 자외선 조사 전 점착력이 높고, 자외선 조사 후 박리 점착력이 낮고, 박리 후 웨이퍼 표면에 남게 되는 점착제 잔사물이 가장 적었다.

• 한국표면공학회지
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• 제42권5호
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• pp.220-226
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• 2009

Cr-O-N coatings having different oxygen contents were deposited on Si wafer and SUS 304 substrates by an arc ion plating technique using Cr target in $Ar/O_2/N_2$ gaseous atmosphere. As increasing oxygen content in the coating, the microstructure of Cr-O-N coating changed from polycrystalline having NaCl structure to amorphous structure. Further increase of oxygen content resulted in phase transformation from amorphous to rhombohedral structure. From the variations of d value and average grain size, it was revealed that the maximum solubility of oxygen in Cr-O-N coating was about 21 at.%. And the maximum micro-hardness of 2751HK was obtained in this composition. The lowest friction coefficient was measured in the coating having 34.8 at.% of oxygen. However, more narrow width of wear track was found in the coating having 30.1 at.% of oxygen.

• 한국세라믹학회지
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• 제41권3호
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• pp.197-201
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• 2004

플라즈마 화학기상증착(PECVD)법을 이용하여 Si(100) 웨이퍼에 silicon oxide(SiO$_2$)와 silicon oxynitride(SiON) 후막을 SiH$_4$, $N_2$O, $N_2$가스를 혼합하여 증착하였다. RF power와 rf bias power의 변화에 따른 SiO$_2$ 막과 SiON 막의 특성변화에 대하여 고찰하였다. RF power와 rf bias power가 증가함에 따라 굴절률은 감소하는 경향을 나타내었으며, 막의 굴절률은 1552 nm에서 1.4493-1.4952까지 변화하였다. 이와 같이 rf power가 증가함에 따라 굴절률이 감소하는 이유는 oxygen의 량이 증가하고 nitrogen의 량이 감소하여 즉, O/N 비가 증가하여 굴절률이 감소하는 경향을 나타내었다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 The 6th International Symposium of East Asian Resources Recycling Technology
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• pp.415-420
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• 2001

Water usage in the semiconductor industries is dramatically increased by not only using bigger wafer from 8 inches to 12 inches but also by adapting new process such as Chemical Mechanical Planarization (CMP) process invented by IBM in late '80. However, The document published by International Semiconductor Association suggests the decreasing ultra pure water (UPW) use from 22 gallon/in$^2$in 1997 to 5 gallon/in$^2$ in 2012. The criteria will possibly used as exporting obstacle in the future. Generally, Solid content of CMP slurry is about 15wt%. The slurry is diluted with UPW before fed to a CMP process. When the slurry is discharged from the process as waste, it contains 0.1~0.6wt% of solid content and 9~10 at pH. The CMP waste slurry is discharged to stream with minimum treatment. In this study, to find optimum condition of coagulation for water recovery from the waste CMP slurry various condition of coagulation were examined. After coagulation far 0.1 wt% solid content of waste CMP slurry, the sludge volume was 10~15% after 30 min of sedimentation time. For the 0.5 wt%, sludge volume was 50~55% after one hour of sedimentation time. For more than 80% of water recycling, the solid content should be in the range of 0.1 to 0.2wr%. Based on the result of the turbidity removal, the Zeta Potential and the analysis of heavy metals, the optimum condition for 0.1 wr% of waste CMP slurry was with 20 mg/L of PACI at 4 to 5 of pH. The result showed that the optimum conditions fer the 0.1 wt% waste CMP slurry were 100mg/L of Alum at 4~5 of pH, 100 mg/L of MgCI$_2$at pH 10 to 11 and 100 mg/L of Ca(OH)$_2$at pH 9 to 11, respectively.

• 한국결정성장학회지
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• 제15권6호
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• pp.234-238
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• 2005

[ $Cl_2/Ar$ ] 유도결합 플라즈마(ICP)내의 플라즈마 조성, 이온 flux 및 이온 에너지가 $La_3Ga_5SiO_{14}$ 단결정 wafer의 식각속도, 표면 양상 및 화학량론적 조성에 미치는 영향을 조사하였다. 비교적 높은 ICP source power$({\sim}1000W)$ 또는 높은 $Cl_2$ gas 유량 비율 조건으로부터 최고 약 $1600{\AA}/min$의 실용적이고 조절이 용이한 식각속도를 확보하였다. 식각된 $La_3Ga_5SiO_{14}$ 표면은 식각 이전과 비슷하거나 더 낮은 표면 조도 특성을 나타내었으며 식각 공정 전, 후 표면의 화학량론적 조성에 있어서의 변화는 없는 것으로 조사되었다.

• 센서학회지
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• 제24권1호
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• pp.10-14
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• 2015

This paper reports the results of a study on the optimization of the etching profile, which is an important factor in deep-reactive-ion etching (DRIE), i.e., dry etching. Dry etching is the key processing step necessary for the development of the Internet of Things (IoT) and various microelectromechanical sensors (MEMS). Large-area etching (open area > 20%) under a high-frequency (HF) condition with nonoptimized processing parameters results in damage to the etched sidewall. Therefore, in this study, optimization was performed under a low-frequency (LF) condition. The HF method, which is typically used for through-silicon via (TSV) technology, applies a high etch rate and cannot be easily adapted to processes sensitive to sidewall damage. The optimal etching profile was determined by controlling various parameters for the DRIE of a large Si wafer area (open area > 20%). The optimal processing condition was derived after establishing the correlations of etch rate, uniformity, and sidewall damage on a 6-in Si wafer to the parameters of coil power, run pressure, platen power for passivation etching, and $SF_6$ gas flow rate. The processing-parameter-dependent results of the experiments performed for optimization of the etching profile in terms of etch rate, uniformity, and sidewall damage in the case of large Si area etching can be summarized as follows. When LF is applied, the platen power, coil power, and $SF_6$ should be low, whereas the run pressure has little effect on the etching performance. Under the optimal LF condition of 380 Hz, the platen power, coil power, and $SF_6$ were set at 115W, 3500W, and 700 sccm, respectively. In addition, the aforementioned standard recipe was applied as follows: run pressure of 4 Pa, $C_4F_8$ content of 400 sccm, and a gas exchange interval of $SF_6/C_4F_8=2s/3s$.