• Journal of Powder Materials
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• v.12 no.1
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• pp.17-23
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• 2005

Dense $WSi_2$-20vol.%SiC composite was synthesized by high-frequency induction-heated combustion synthesis(HFIHCS) method within 2 minutes in one step from elemental powder mixture of W, Si and C. Simultaneous combustion synthesis and densification were accomplished under the combined effects of an induced current and mechanical pressure. Highly dense $WSi_2$-20vol.%SiC with relative density of up to 97% was produced under simultaneous application of 60MPa pressure and the induced current. The average grain size of $WSi_2$ was about $5.2{\mu}m$. The hardness and fracture toughness values obtained were 1700kg/$mm^2$ and $4.4MPa{\cdot}m^{1/2}$, respectively.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2004.11a
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• pp.94-95
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• 2004

Using the high-frequency induction heated combustion method, the simultaneous synthesis and densification of $WSi_2-xvol.%SiC$ (x=0, 10, 20, 30) composites was accomplished using elemental powders of W, Si and C. A complete synthesis and densification of the materials was achieved in one step within a duration of 2 min. The relative density of the composite was up to 97% for the applied pressure of 60MPa and the induced current. The average grain size of $WSi_2$ are 6.9, 6.1, and $5.0{\mu}m$, respectively. The hardness and the fracture toughness increases with increasing SiC content. The maximum values for the hardness and fracture toughness are $1840kg/mm^2\;and\;5.1MPa{\cdot}m^{1/2}\;at\;WSi_2-30vol.%SiC$.

• Magazine of the Korean Society of Agricultural Engineers
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• v.37 no.6
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• pp.103-111
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• 1995

Drought index calculation based on the principal hydrological parameters, such as rainfall and reservoir storage, can estimate the duration and intensity of drought in irrigation reservoirs. It is difficult to build up a drought criteria since the conditions change variously by the reliability of rainfall. Because of the increasing water demands, it is urgent to prepare a generalized positive countermeasure to overcome drought. Water demands can at calculated but the estimation of drought characteristics, and the effective water management method can be established. The purpose of this study is to obtain a drought index and build up a data-base on the reservoir basins for establishing the fundamental hydrological data-base. This Index can observe the behavior of the WSI(Water Supply Index) and the component indices. The results summarized through this study are as follows. 1. WSI value of zero does not correspond to 100% in average due to the skewness in the probability distributions. 2. WSI is not a linear index; that is, given change in terms of water volume or percentage of average does not result in a proportional change on the WSI scale. 3. WSI is not always between the reservoir and the rainfall index in magnitude. This is only true if the component indices are of opposite sign. If they are of the same sign, the SWSI will often have a mangitude greater than either of the component indices. This is easily understood, because the concurrence of extreme values of the same sign for the two components is rarer than the occurrence of extreme values for either of the two components individually.

• Journal of the Korean Ceramic Society
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• v.27 no.5
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• pp.645-651
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• 1990

Effects of excess Si on the properities of the oxide of CVD tungsten silicide were investigated by comparing the characteristics of the two kinds of thermal oxide for CVD-WSi2.7 and WSi3.1 films on the polycrystalline Si film each other. It is reveraled from AES analysis that Si in the surface region of the silicide film is consumed to make composition and resistivity of the silicide film very nonuniform for the case of the oxidation of WSi3.1, while the underlayer polycrystalline Si was consumed for the case of the oxidation of WSi2.7.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2004.04a
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• pp.34-35
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• 2004

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.4
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• pp.173-178
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• 2003

In this paper, we studied the physical and electrical characteristics of $\textrm{WSi}_{x}$ thin film with respect to the adoption of the DCS (dichlorosiliane) post flow and the variation of deposition temperature. XRD measurements show that as deposited thin film has a hexagonal structure regardless of deposition Process. However, we find that the phase of thin film has changed to a tetragonal structure after the heat treatment at $680^{\circ}C$. Adoption of DCS post flow and increment of deposition temperature result in the increments of Si/W composition ratio. These conditions also result in the increment of sheet resistance by the amount 3.0~4.2$\Omega$/$\square$, but give the tendency in the decrement of stress by 0.27~0.3 E10dyne/$\textrm{cm}^2$. We also find that the contact resistance of word line and bit line interconnection was decreased by the amount 5.33~16.43$\mu$$\Omega$-$\textrm{cm}^2$, when applying DCS post flow and increasing deposition temperature.

• Mass Spectrometry Letters
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• v.3 no.1
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• pp.18-20
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• 2012

We report observation of laser desorption/ionization (LDI) of peptides from flat surfaces of tungsten silicide ($WSi_2$). In contrast to MALDI (matrix-assisted laser desorption/ionization) and SALDI (surface-assisted laser desorption/ionization) mass spectrometry, this study did not utilize any matrices and surface nanostructures. In this work, LDI on $WSi_2$ surfaces is demonstrated to cover a mass range up to 1,600 Da (somatostatin; monoisotopic mass = 1637.9 Da). In addition, it exhibited a high sensitivity, which could detect peptides, which could detect peptides of low femtomole levels (20 fmol for angiotensin II). The observed LDI process was discussed to be largely thermal, more specifically, due to laser-induced surface heating that is most likely promoted by the low thermal diffusivity (${\kappa}$) of $WSi_2$ substrate.

• Journal of the Korean institute of surface engineering
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• v.29 no.1
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• pp.3-14
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• 1996

High temperature anneal of W-rich silicides, inferior to adherence compared with Si-rich silicides, resulted in the film peeling off from the Si-substrate when WSix thickness reached more than critical thickness. Investigation of the W-rich silicide films peeling off from the substrate revealed that the voids underneath the $WSi_2$ produced through silicide reaction were responsible for the poor adherence of W-rich silicide. In addition, internal stress in the film increased as the silicide thickness increased. In order to promote the adhesion of WSix to Si-substrate, thin Ti-layer was formed between WSi and Si-substrate(WSix/Ti/Si). No voids were observed in $WSi_2$/Ti/Si $N_2$-annealed at $1000^{\circ}C$, thereby leading to an increase of the critical thickness from ～1700$\AA$ to more than 2500$\AA$. However, higher resisiti-vity was obtained in WSix/Ti/Si than in WSix/Si. Finally, different silicide reaction mechanism for the structures(WSix/Si, WSix/Ti/Si) was proposed to explain the formation of voids as well as the role of thin Ti-layer.

• Asian-Australasian Journal of Animal Sciences
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• v.23 no.5
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• pp.543-555
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• 2010

The objectives of this research were the estimation of genetic parameters and trends for weaning-to-first service interval (WSI), and litter traits in a commercial swine population composed of Landrace (L), Large White (T), LT, and TL animals in Chiang Mai, Northern Thailand. The dataset contained 4,399 records of WSI, number of piglets born alive (NBA), litter weight of live piglets at birth (LBW), number of piglets at weaning (NPW), and litter weight at weaning (LWW). Variance and covariance components were estimated with REML using 2-trait analyses. An animal model was used for WSI and a sire-dam model for litter traits. Fixed effects were farrowing year-season, breed group of sow, breed group of boar (litter traits), parity, heterosis (litter traits), sow age, and lactation length (NPW and LWW). Random effects were boar (litter traits), sow, permanent environment, and residual. Heritabilities for direct genetic effects were low for WSI (0.04${\pm}$0.02) and litter traits (0.05${\pm}$0.02 to 0.06${\pm}$0.02). Most heritabilities for maternal litter trait effects were 20% to 50% lower than their direct counterparts. Repeatability for WSI was similar to its heritability. Repeatabilities for litter traits ranged from 0.15${\pm}$0.02 to 0.18${\pm}$F0.02. Direct genetic, permanent environment, and phenotypic correlations between WSI and litter traits were near zero. Direct genetic correlations among litter traits ranged from 0.56${\pm}$0.20 to 0.95${\pm}$0.05, except for near zero estimates between NBA and LWW, and LBW and LWW. Maternal, permanent environment, and phenotypic correlations among litter traits had similar patterns of values to direct genetic correlations. Boar genetic trends were small and significant only for NBA (-0.015${\pm}$0.005 piglets/yr, p<0.004). Sow genetic trends were small, negative, and significant (-0.036${\pm}$0.013 d/yr, p<0.01 for WSI; -0.017${\pm}$0.005 piglets/yr, p<0.007, for NBA; -0.015${\pm}$0.005 kg/yr, p<0.01, for LBW; -0.019${\pm}$0.008 piglets/yr, p<0.02, for NPW; and -0.022${\pm}$0.006 kg/yr, p<0.003, for LWW). Permanent environmental correlations were small, negative, and significant only for WSI (-0.028${\pm}$0.011 d/yr, p<0.02). Environmental trends were positive and significant only for litter traits (p<0.01 to p<0.0003). Selection based on predicted genetic values rather than phenotypes could be advantageous in this population. A single trait analysis could be used for WSI and a multiple trait analysis could be implemented for litter traits.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.134-134
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• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.