• Title/Summary/Keyword: W-beam

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Multi-kilowatt Single-mode Ytterbium-doped Large-core Fiber Laser

  • Jeong, Yoon-Chan;Boyland, Alexander J.;Sahu, Jayanta K.;Chung, Seung-Hwan;Nilsson, Johan;Payne, David N.
    • Journal of the Optical Society of Korea
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    • v.13 no.4
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    • pp.416-422
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    • 2009
  • We have demonstrated a highly efficient cladding-pumped ytterbium-doped fiber laser, generating $>$2.1 kW of continuous-wave output power at 1.1 μm with 74% slope efficiency with respect to launched pump power. The beam quality factor ($M^2$) was better than 1.2. The maximum output power was only limited by available pump power, showing no evidence of roll-over even at the highest output power. We present data on how the beam quality depends on the fiber parameter, based on our current and past fiber laser developments. We also discuss the ultimate power-capability of our fiber in terms of thermal management, Raman nonlinear scattering, and material damage, and estimate it to 10 kW.

The diffraction property of the bessel beam for defocus (Defous에 따른 bessel beam의 회절 특성)

  • 박성종;최기준;박민경;김재범;심상현;정창섭
    • Korean Journal of Optics and Photonics
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    • v.6 no.2
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    • pp.101-107
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    • 1995
  • To investigate the diffraction property of the Bessel beam for defocus which acts CFAP (Combined Filter of Amplitude and Phase), we calculated numerically the intensity, the radius of central spot, and the optical transfer function for the number of node of the Bessel beam when an optical system has an aberration-free or a spherical aberration. The Bessel beam has larger the maximum intensity and the OTF value for an optical system with a spherical aberration than that with an aberrationfree. Particularly, the OTF value at the point of maximum intensity for $W_{40}=3\lambda$is higher for the Bessel beam than for the Clear aperture. From these results, we know that the Bessel beam has the compensating effect. The Bessel beam also has the radius of central spot having a superresolution. We will useful for the fabrication of semiconductor device and the optical recording system using these effects.ffects.

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Investigation on manufacturing and electrical properties of$Ba_{0.5}Sr_{0.5}TiO_3$thin film capacitors using RE Magnetron Sputtering (RF Magnetron Sputtering을 이용한 $Ba_{0.5}Sr_{0.5}TiO_3$박막 커패시터의 제작과 전기적 특성에 관한 연구)

  • 이태일;박인철;김홍배
    • Journal of the Korean Vacuum Society
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    • v.11 no.1
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    • pp.1-7
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    • 2002
  • We deposited $Ba_{0.5}Sr_{0.5}TiO_3$(BST) thin-films on Pt/Ti/$SiO_2$/Si substrates using RF magnetron sputtering method. A Substrate temperature was fixed at room temperature, while working gas flow ratio and RF Power were changed from 90:10 to 60:40 and 50 W, 75 W respectively. Also after BST thin films were deposited, we performed annealing in oxygen atmosphere using Rapid Thermal Annealing. For capacitor application we deposited Pt using E-beam evaporator of UHV system. In a structural property study through XRD measurement we found that crystallization depends on annealing rather than working gas ratio or and RF Power. Electrical properties showed relatively superior characteristic on the annealed sample with 50 W of RF Power.

Quasi-continuous-wave Yb-doped Fiber Lasers with 1.5 kW Peak Power (첨두 출력 1.5 kW급 준연속 이터븀 첨가 광섬유 레이저)

  • Jeon, Minjee;Jung, Yeji;Kim, Jiwon;Jeong, Hoon
    • Korean Journal of Optics and Photonics
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    • v.27 no.3
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    • pp.95-100
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    • 2016
  • High-power quasi-continuous-wave (qcw) operation in Yb-doped double-clad fiber lasers with near-diffraction-limited quality of the output beam is reported. Based on numerical simulation, we built a simple, all-fiberized Yb fiber laser, and a fiber-based master-oscillator power amplifier (MOPA). Both laser systems have successfully produced qcw output with average power greater than 150 W at 1080 nm and 10 ms pulse duration at 10 Hz repetition rate, corresponding to a peak power greater than 1.5 kW for 205 W of pump power at 976 nm. Laser performance, including beam quality and slope efficiency, was characterized in both configurations. Prospects for power scaling and applications are discussed.

Control and Design of a Arc Power Supply for KSTAR's the Neutral Beam Injection

  • Ryu, Dong-Kyun;Lee, Hee-Jun;Lee, Jung-Hyo;Won, Chung-Yuen
    • Journal of Electrical Engineering and Technology
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    • v.10 no.1
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    • pp.216-226
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    • 2015
  • The neutral beam injection generate ultra-high temperature energy in the tokamak of nuclear fusion. The neutral beam injection make up arc power supply, filament power supply and acceleration & deceleration power supply. The arc power supply has characteristics of low voltage and high current. Arc power supply generate arc through constant output of voltage and current. So this paper proposed suitable buck converter for low voltage and high current. The proposed buck converter used parallel switch because it can be increased capacity and decrease conduction loss. When an arc generated, the neutral beam injection chamber occur high voltage. And it will break output capacitor of buck converter. Therefore the output capacitor was removed in the proposed converter. Thus the proposed converter should be designed for the characteristics of low voltage and high current. Also, the arc power supply should be guaranteed for system stability. The proposed parallel buck converter enables the system stability of the divided low output voltage and high current. The proposed converter with constant output be the most important design of the output inductor. In this paper, designed arc power supply verified operation of system and stability through simulation and prototype. After it is applied to the 288[kW] arc power supply for neutral beam injection.

Influences of degradation in MgO protective layer and phosphors on ion-induced secondary electron emission coefficient and static margins in alternating current plasma display panels

  • Jeong, H.S.;Lim, J.E.;Park, W.B.;Jung, K.B.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.518-521
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    • 2004
  • The degradation characteristics of MgO protective layer and phosphors have been investigated in terms of the ion-induced secondary electron emission coefficient ${\gamma}$ and static margin of discharge voltages, respectively, in this experiment. The ion-induced secondary electron emission coefficients ${\gamma}$ for the degraded MgO protective layer and phosphors have been studied by ${\gamma}$ -focused ion beam system. The energy of Ne+ ions used is from 80 eV to 200 eV in this experiment. The degraded MgO and phosphor layers are found to have higher ${\gamma}$ than that of normal ones without degradations or aged one. Also, the static margin of discharge voltages for test panels with degraded MgO protective layer and phosphors been found to be seriously decreased in comparison with those of normal ones without degradations.

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ION BEAM AND ITS APPLICATIONS

  • Koh, S.K.;Choi, S.C.;Kim, K.H.;Cho, J.S.;Choi, W.K.;Yoon, Y.S.;Jung, H.J.
    • Journal of the Korean Vacuum Society
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    • v.6 no.S1
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    • pp.110-114
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    • 1997
  • Development of metal ion source growth of high quality Cu metal film formation of non-stoichiometric $SnO_2$ films of Si(100), and modification fo polymer surface by low enregy ion beam have been carried out at KIST Ion Beam Lab. A new metal ion source with high ion beam flux has been developed by a hybrid ion beam (HIB) deposition and non-stoichiometric $SnO_2$ films are controlled by supplying energy. The ion assisted reaction (IAR) in which keV ion beam is irradiated in reactive gas environment has been deveolped for modifying the polymers and enhancing adhesion to other materials and advantages of the IAR have been reviewed.

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Effect of Incident Ion Beam Energy on Microstructure and Adhesion Behavior of TiN Thin Films (TiN 박막의 미세조직 및 밀착력에 미치는 입사이온빔 에너지의 효과)

  • Baeg, C.H.;Hong, J.W.;Wey, M.Y.
    • Journal of the Korean Society for Heat Treatment
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    • v.18 no.4
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    • pp.229-234
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    • 2005
  • Effect of incident ion beam energy on microstructure and adhesion behavior of TiN thin films were studied. Without ion beam assist, TiN film showed (111) growth mode which was thought to have the lowest deformation energy. As the ion beam assist energy increased, TiN film growth mode was changed from (111) to (200) mode. On the Si(100) substrate the critical incident energy for growth mode change was 100 eV/atom, however the critical assist energy was 121 eV/atom on the STD61 substrate. Grain size of TiN films increased with the assist ion beam energy. Finally, adhesion strength of TiN films bombarded above the critical ion assist energy showed 4~5 times higher values than that with lower bombard ion energy.