• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.58.1-58.1
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• 2010

In solar cell module manufacturing, single solar cells has to be joined electrically to strings. Copper stripes coated with tin-silver-copper alloy are joined on screen printed silver of solar cells which is called busbar. The bus bar collects the electrons generated in solar cell and it is connected to the next cell in the conventional module manufacturing by a metal stringer using conventional hot air or infrared lamp soldering systems. For thin solar cells, both soldering methods have disadvantages, which heats up the whole cell to high temperatures. Because of the different thermal expansion coefficient, mechanical stresses are induced in the solar cell. Recently, the trend of solar cell is toward thinner thickness below 180um and thus the risk of breakage of solar cells is increasing. This has led to the demand for new joining processes with high productivity and reduced error rates. In our project, we have developed a new method to solder solar cells with a laser heating source. The soldering process using diode laser with wavelength of 980nm was examined. The diode laser used has a maximum power of 60W and a scanner system is used to solder dimension of 6" solar cell and the beam travel speed is optimized. For clamping copper stripe to solar cell, zirconia(ZrO)coated iron pin-spring system is used to clamp both joining parts during a scanner system is traveled. The hot plate temperature that solar cell is positioned during lasersoldering process is optimized. Also, conventional solder joints after $180^{\circ}C$ peel tests are compared to the laser soldering methods. Microstructures in welded zone shows that the diffusion zone between solar cell and metal stripes is better formed than inIR soldering method. It is analyzed that the laser solder joints show no damages to the silicon wafer and no cracks beneath the contact. Peel strength between 4N and 5N are measured, with much shorter joining time than IR solder joints and it is shown that the use of laser soldering reduced the degree of bending of solar cell much less than IR soldering.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• Journal of Astronomy and Space Sciences
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• v.31 no.1
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• pp.15-23
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• 2014

We present preliminary observations of the field-aligned-irregularities (FAIs) in the E and F regions during the solar minimum (2009 - 2010) using the 40.8 MHz coherent backscatter radar at Daejeon ($36.18^{\circ}N$, $127.14^{\circ}E$, $26.7^{\circ}N$ dip latitude) in South Korea. The radar, which consists of 24 Yagi antennas, observes the FAIs using a single beam with a peak power of 24 kW. The radar has been continuously operated since December 2009. Depending on the manner of occurrence of the backscatter echoes, the E-region echoes are largely divided into two types: quasi-periodic (QP) and continuous echoes. Our observations show that the QP echoes occur frequently above an altitude of 105 km in the post-sunset period and continuous echoes occur preferentially around an altitude of 105 km in the post-sunrise period. QP echoes appear as striated discrete echoes for a period of about 10 - 20 min. The QP-type echoes occur more frequently than the continuous-type echoes do and the echo intensity of the QP type is stronger than that of the continuous type. In the F region, the FAIs occur at night at an altitude interval of 250 - 450 km. As time proceeds, the occurrence height of the FAIs gradually increases until early in the morning and then decreases. The duration of the F-region FAIs is typically a few hours at night, although, in rare cases, FAIs persist throughout the night or appear even after sunrise. We discuss the similarities and differences of the FAIs observed by the Daejeon radar in comparison with other radar observations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.137-137
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• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.8
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• pp.13-19
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• 2001

We report on the fabrication and characterization of $Al_{0.3}Ga_{0.7}N$ HFETs with different barrier layer thickness which were grown using plasma-assisted molecular beam epitaxy (PAMBE). The barrier thickness of $Al_{0.3}Ga_{0.7}N$/GaN HFETs could be optimized in order to maximize 2 dimensional electron gas induced by piezoelectric effect without the relaxation of $Al_{0.3}Ga_{0.7}N$ layer. $Al_{0.3}Ga_{0.7}N$/GaN (20 nm/2 mm) HFET with 0.6 ${\mu}m$-long and 34 ${\mu}m$-wide gate shows saturated current density ($V_{gs}=1\;V$) of 1.155 A/mm and transconductance of 250 ms/mm, respectively. From high frequency measurement, the fabricated $Al_{0.3}Ga_{0.7}N$/GaN HFETs showed $F_t=13$ GHz and $F_{max}=48$ GHz, respectively. The uniformity of less than 5% could be obtained over the 2 inch wafer. In addition to the optimization of epi-layer structure, the relation between breakdown voltage and high frequency characteristics has been examined.

• Journal of the Korean Vacuum Society
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• v.16 no.1
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• pp.46-51
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• 2007

The HFMX((High Flux Macromolecular X-ray crystallography) beamline at Pohang Accelerator Laboratory uses beams from a multi-pole wiggler. Two horizontal and vertical slits relevant to high heat-load are installed at its front-end. In order to treat high heat-load with reducing beam scattering, the horizontal slit has two Glidcop blocks with a grazing incidence angle of $10^{\circ}$ of a grazing-incidence knife-edge configuration. The blocks adjust the slit gap by being translated along guides by two actuating bars, respectively. Water flowing through holes, drilled along the actuating bars, cools the heat-load of both blocks. The vortical slit has the same structure as the horizontal slit except its installation direction with respect to the vacuum chamber and its grazing incidence angle. By virtue of a pair of blocks translating on guides, no alignment between both blocks is required and the installed slits show stable operating performance. The cooling performance of the two slits has been also shown to be acceptable. In this paper, the detailed explanation for the design of the two slits is presented and their operating performance is discussed.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.809-815
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• 1996

$Y_2O_3$-based metal-insulator-semiconductor (MIS) structure on p-Si(100) has been studied. Films were prepared by UHV reactive ionized cluster beam deposition (r-ICBD) system. The base pressure of the system was about $1 \times 10^{-9}$ -9/ Torr and the process pressure $2 \times 10^{-5}$ Torr in oxygen ambience. Glancing X-ray diffraction(GXRD) and in-situ reflection high energy electron diffracton(RHEED) analyses were performed to investigate the crystallinity of the films. The results show phase change from amorphous state to crystalline one with increasingqr acceleration voltage and substrate temperature. It is also found that the phase transformation from $Y_2O_3$(111)//Si(100) to $Y_2O_3$(110)//Si(100) in growing directions takes place between $500^{\circ}C$ and $700^{\circ}C$. Especially as acceleration voltage is increased, preferentially oriented crystallinity was increased. Finally under the condition of above substrate temperature $700^{\circ}C$ and acceleration voltage 5kV, the $Y_2O_3$films are found to be grown epitaxially in direction of $Y_2O_3$(1l0)//Si(100) by observation of transmission electron microscope(TEM). Capacitance-voltage and current-voltage measurements were conducted to characterize Al/$Y_2O_3$/Si MIS structure with varying acceleration voltage and substrate temperature. Deposited $Y_2O_3$ films of thickness of nearly 300$\AA$ show that the breakdown field increases to 7~8MV /cm at the same conditon of epitaxial growing. These results also coincide with XPS spectra which indicate better stoichiometric characteristic in the condition of better crystalline one. After oxidation the breakdown field increases to 13MV /cm because the MIS structure contains interface silicon oxide of about 30$\AA$. In this case the dielectric constant of only $Y_2O_3$ layer is found to be $\in$15.6. These results have demonstrated the potential of using yttrium oxide for future VLSI/ULSI gate insulator applications.

• Journal of the Korean Vacuum Society
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• v.17 no.5
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• pp.408-418
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• 2008

The rectangular resonant cavity was designed and characterized as a microwave plasma source for focused ion beam. The optimum cavity was calculated analytically and analyzed in detail by using HFSS(High Frequency Structure Simulator). Since the resonant cavity can be affected by the permittivity of quartz chamber and plasma, the cavity is designed to be changeable in one direction. By observing the microwave input power at which the breakdown begins, the optimum cavity length for breakdown is measured and compared with the calculated one, showing in good agreement with the optimum length reduced by 10cm according to the permittivity change in the presence of quartz chamber. The shape of breakdown power curve as a function of pressure appears to be similar to Paschen-curve. After breakdown, plasma densities increase with microwave power and the reduced effective permittivity in the cavity with plasma results in larger optimum length. However, it is not possible to optimize the cavity condition for high density plasmas with increased input power, because too high input power causes expansion of density cutoff region where microwave cannot penetrate. For more accurate microwave cavity design to generate high density plasma, plasma column inside and outside the density cutoff region needs to be treated as a conductor or dielectric.

• Journal of IKEEE
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• v.21 no.4
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• pp.368-374
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• 2017

In this Paper, we developed a low power type LED security light using LED lighting that substitutes a 220[V] commercial power source for a solar cell module instead of a halogen or a sodium lamp. in addition, a PWM type drive control circuit is designed to minimize the heat generation problem and the drive current of the LED drive controller. in developed system, The light efficiency measurement value is 93.6[lm/W], and a high precision temperature sensor is used inside the controller to control the heat generation of the LED lamp. In order to eliminate the high heat generated from the LED lamp, it is designed to disperse quickly into the atmosphere through the metal insertion type heat sink. The heat control range of LED lighting was $50-55[^{\circ}C]$. The luminous flux and the lighting speed of the LED security lamp were 0.5[s], and the beam diffusion angle of the LED lamp was about $110[^{\circ}C]$ by the light distribution curve based on the height of 6[m].

• The Journal of Korean Academy of Prosthodontics
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• v.18 no.1
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• pp.15-35
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• 1980

The purpose of this study was to investigate stresses in the various components of fixed partial dentures restoring the posterior teeth of the lower jaw, and to measure quantitatively the effects of certain modifications in structural design on the stresses in the restorations using two-dimensional photoelasticity. Two-dimensional photoelastic methods were used in this study. Several models of fixed partial dentures were constructed. Shoulder less margins and anatomic occlusal reduction were incorporated in Model 1. Rounded shoulders and flat occlusal reduction were incorporated in Model 2, while Model 3 was a cantilever fixed partial denture. Other similar fixed partial dentures were constructed with V and U notches deliverately included in the region of the fixed joints for comparative reasons. The birefringent materials used in this study were PSM-1 and PSM-5 in standard sheets. PSM-1 was used for constructing the substructure, and PSM-5 was used in making the components of the fixed partial dentures. The two materials were used in the construction of composite photoelastic models. Improved artificial stone was used to represent dental cement in luting the composite photoelastic models. Static loading procedures were used at preplanned sites to represent occlusal loads in the mouth. 35 mm color and B/W film were used to record isochromatics in accordance with photoelastic procedures. Data reduction was performed using the grid method, which helped in, the mathematical integration procedure (Shear difference method) to separate the principal stresses. The results were as follows. 1. Fixed partial dentures do not function in bending as a symmetrical beam. Alternate areas of tension and compression were demonstrated when multiple contact loading was used. 2. The weakest part in posterior fixed partial dentures is the fixed joint. 3. (1) Models I and modified Model I were loaded on the pontic using a 50 pound vertical static load. The shear stress near the posterior fixed joint in Model 1 (U notches) was+129.4 p.s.i., and at the same fixed joint in modified Model 1 (V notches) was+239.4 p.s.i. The concentration of stress in fixed joint was reduced by 50% when U notches replaced the V notches. (2) Modified Model 2 was loaded using a multiple contact loader at a total load of 125 pounds. The difference between the principal stresses (${\sigma}_1-{\sigma}_2$), shear stress, at the V notches was+600 p.s.i., and at the U notches was+3l7 p.s.i. The shear stress was reduced by 50% when U notches replaced the V notches. V-grooves at the fixed joints should be avoided, and should be replaced by regular shaped U-grooves. 4. Cantilever fixed partial dentures had much higher stresses at the fixed joint than fixed partial dentures that were attached at both ends.