• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.75-78
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• 2006

In case of contacts between semiconductor and metal in semiconductor circuits, they become unstable because of thermal budget. To prevent these problems, we use diffusion barrier that has a good thermal stability between metal and semiconductor. So we consider the diffusion barrier to prevent the increase of contact resistance between the interfaces of metals and semiconductors, and the increase of resistance and the reaction between the interfaces. In this paper we deposited tungsten boron carbon nitride (W-B-C-N) thin film on silicon substrate. The impurities of the $1000\;{\AA}-thick$ W-B-C-N thin films provide stuffing effect for preventing the inter-diffusion between metal thin films $(Cu-2000\;{\AA})$ and silicon during the high temperature $(700\~1000^{\circ}C)$ annealing process.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.203-207
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• 2009

Copper is known as a replacement for aluminum wire which is used for semiconductor. Because specific resistance of Cu ($1.67{\mu}{\Omega}$-cm) is lower than that of Al ($2.66{\mu}{\Omega}$-cm), Cu reduce RC delay time. Although melting point of Cu($1085^{\circ}C$) is higher than melting point of Al, Cu have characteristic to easily react with Silicon(Si) in low temperature, and it isn't good at adhesive strength with Si. For above these reason, research of diffusion barrier to prevent reaction between Cu and Si and to raise adhesive strength is steadily advanced. Our study group have researched on W-C-N (tungsten-carbon-nitrogen) Diffusion barrier for preventing diffusion of Cu through semiconductor. By recent studies, It's reported that W-C-N diffusion barrier can even precent Cu and Si diffusing effectively at high temperature. In this treatise, we vaporized different proportion of N into diffusion barrier to research Cu's Electromigration based on the results and studied surface hardness in the heat process using nano scale indentation system. We gain that diffusion barrier containing nitrogen is more stable for Cu's electromigration and has stronger surface hardness in heat treatment process.

• Journal of applied mathematics & informatics
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• v.28 no.1_2
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• pp.13-30
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• 2010

Let C be a nonempty closed convex subset of a real Hilbert space H. Consider the following iterative algorithm given by $x_0\;{\in}\;C$ arbitrarily chosen, $x_{n+1}\;=\;{\alpha}_n{\gamma}f(W_nx_n)+{\beta}_nx_n+((1-{\beta}_n)I-{\alpha}_nA)W_nP_C(I-s_nB)x_n$, ${\forall}_n\;{\geq}\;0$, where $\gamma$ > 0, B : C $\rightarrow$ H is a $\beta$-inverse-strongly monotone mapping, f is a contraction of H into itself with a coefficient $\alpha$ (0 < $\alpha$ < 1), $P_C$ is a projection of H onto C, A is a strongly positive linear bounded operator on H and $W_n$ is the W-mapping generated by a finite family of nonexpansive mappings $T_1$, $T_2$, ${\ldots}$, $T_N$ and {$\lambda_{n,1}$}, {$\lambda_{n,2}$}, ${\ldots}$, {$\lambda_{n,N}$}. Nonexpansivity of each $T_i$ ensures the nonexpansivity of $W_n$. We prove that the sequence {$x_n$} generated by the above iterative algorithm converges strongly to a common fixed point $q\;{\in}\;F$ := $\bigcap^N_{i=1}F(T_i)\;\bigcap\;VI(C,\;B)$ which solves the variational inequality $\langle({\gamma}f\;-\;A)q,\;p\;-\;q{\rangle}\;{\leq}\;0$ for all $p\;{\in}\;F$. Using this result, we consider the problem of finding a common fixed point of a finite family of nonexpansive mappings and a strictly pseudocontractive mapping and the problem of finding a common element of the set of common fixed points of a finite family of nonexpansive mappings and the set of zeros of an inverse-strongly monotone mapping. The results obtained in this paper extend and improve the several recent results in this area.

• Electronics and Telecommunications Trends
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• v.32 no.4
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• pp.89-95
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• 2017

영국은 2017년 3월 5G N/W 조기구축을 위한 정부차원의 전략방향 보고서(A 5G Strategy for UK)를 발표하였다. 영국은 5G 인프라가 4차 산업혁명의 촉진제 역할을 할 것이며, 5G로 인한 경제적 파급 효과가 2030년경에 1,980억 파운드 달할 것으로 예상한다. 이러한 전망에 따라 영국 정부는 5G 테스트베드 구축, Small Cell 및 백홀 구축 지원, 주파수 정책방향 제시 등 5G N/W 조기구축 환경을 조성하여 이동통신사의 적극적인 투자를 유인할 계획이다. 아울러 산업계, 학계, 지역정부와 협력하여 다양한 산업분야에서의 5G 활용 방안을 도출하며, 5G 상용화 이전에 해결해야 할 과제를 정비함으로써 영국이 5G 분야에서 글로벌 리더가 되고자 하는 목표를 제시하고 있다. 본고에서는 영국이 4차 산업혁명에 대비하여 제시하는 5G N/W 투자 촉진 전략을 소개하고자 한다.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.215-217
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• 2007

반도체 집적화 기술의 발달로 반도체 공정에서 디바이스의 선폭은 줄어들고, 박막의 다층화가 필수적인 과정이 되었다. 이에 따라 반도체에서 Si 기판과 금속 배선과의 열적 안정성에 대한 신뢰성이 더욱 중요시 되어가고 있다. 이를 방지하기 위하여 우리는 3개의 화합물로 구성된 Tungsten-Carbon-Nitrogen (W-C-N) 확산방지막을 사용하였다. 실험은 Si 기판위에 W-C-N박막을 물리적 기상 증착법(PVD)으로 질소비율을 변화하며 확산방지막을 증착하여 Si 기판과 W-C-N확산방지막의 특성을 여러 온도 열처리 조건에서 확인하였다. 특성을 분석을 위하여 ${\alpha}-step$과 ${\beta}-ray$를 이용하여 증착률을 확인한 후 4-point probe를 이용하여 비저항을 측정하였고, X-ray Diffraction 분석을 통하여 결정 내부의 변화를 확인하였다. 이를 통하여 W-C-N 확산방지막의 열적인 안정성을 질소변화에 따라 조사하였다.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.79-82
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• 1995

$N^+$ beam modified diffusion barriers have been proposed for Cu metallization . The crystalline phases of W and Ti thin films change from polycrytalline to amorphous phase by the N ion implantation of 1~$3\times 10^{17}$atoms/$\textrm{cm}^2$. The comparison between these amorphized diffusion barriers and the conventional W and TiN films shows that the amorphized W and Ti diffusion barriers are superior to the conventional w and TiN for protecting the Cu diffusion barriers are superior to the conventional W and TiN for protecting the Cu diffusion at the annealing temperature range $600^{\circ}C$~$800^{\circ}C$ for 30min. This is a worldwidely new and excellent result on the high temperature thermal stability of diffusion barrier.

• Kyungpook Mathematical Journal
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• v.48 no.4
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• pp.721-727
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• 2008

Let $W_{\alpha}$ be a weighted shift with positive weight sequence ${\alpha}=\{\alpha_i\}_{i=0}^{\infty}$. The semi-cubical hyponormality of $W_{\alpha}$ is introduced and some flatness properties of $W_{\alpha}$ are discussed in this note. In particular, it is proved that if ${\alpha}_n={\alpha}_{n+1}$ for some $n{\geq}1$, ${{\alpha}_{n+k}}={\alpha}_n$ for all $k{\geq}1$.

• Economic and Environmental Geology
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• v.4 no.4
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• pp.225-234
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• 1971

With the advance of civilization and steadily increasing population rivalry and competition for the use of the sewage, culverts, farm irrigation and control of various types of flood discharge have developed and will be come more and more keen in the future. The author has tried to calculated a formula that could adjust these conflicts and bring about proper solutions for many problems arising in connection with these conditions. The purpose of this study is to find out effective sewage, culvert, drainage, farm irrigation, flood discharge and other engineering needs in the Taegu area. If demands expand further a new formula will have to be calculated. For the above the author estimated methods of control for the probable expected rainfall using a formula based on data collected over a long period of time. The formula is determined on the basis of the maximum daily rainfall data from 1921 to 1971 in the Taegu area. 1. Iwai methods shows a highly significant correlation among the variations of Hazen, Thomas, Gumbel methods and logarithmic normal distribution. 2. This study obtained the following major formula: ${\log}(x-2.6)=0.241{\xi}+1.92049{\cdots}{\cdots}$(I.M) by using the relation $F(x)=\frac{1}{\sqrt{\pi}}{\int}_{-{\infty}}^{\xi}e^{-{\xi}^2}d{\xi}$. ${\xi}=a{\log}_{10}\(\frac{x+b}{x_0+b}\)$ ($-b<x<{\infty}$) ${\log}(x_0+b)=2.0448$ $\frac{1}{a}=\sqrt{\frac{2N}{N-1}}S_x=0.1954$. $b=\frac{1}{m}\sum\limits_{i=1}^{m}b_s=-2.6$ $S_x=\sqrt{\frac{1}{N}\sum\limits^N_{i=1}\{{\log}(x_i+b)\}^2-\{{\log}(x_0+b)\}^2}=0.169$ This formule may be advantageously applicable to the estimation of flood discharge, sewage, culverts and drainage in the Taegu area. Notation for general terms has been denoted by the following. Other notations for general terms was used as needed. $W_{(x)}$ : probability of occurranec, $W_{(x)}=\int_{x}^{\infty}f_{(n)}dx$ $S_{(x)}$ : probability of noneoccurrance. $S_{(x)}=\int_{-\infty}^{x}f_(x)dx=1-W_{(x)}$ T : Return period $T=\frac{1}{nW_{(x)}}$ or $T=\frac{1}{nS_{(x)}}$ $W_n$ : Hazen plot $W_n=\frac{2n-1}{2N}$ $F_n=1-W_x=1-\(\frac{2n-1}{2N}\)$ n : Number of observation (annual maximum series) P : Probability $P=\frac{N!}{{t!}(N-t)}F{_i}^{N-t}(1-F_i)^t$ $F_n$ : Thomas plot $F_n=\(1-\frac{n}{N+1}\)$ N : Total number of sample size $X_l$ : $X_s$ : maximum, minumum value of total number of sample size.

• Kyungpook Mathematical Journal
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• v.56 no.3
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• pp.1003-1016
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• 2016

In this paper, we introduce a new kind of slant helix for null curves called null $W_n$-slant helix and we give a definition of new harmonic curvature functions of a null curve in terms of $W_n$ in (n + 2)-dimensional Lorentzian space $M^{n+2}_1$ (for n > 3). Also, we obtain a characterization such as: "The curve ${\alpha}$ s a null $W_n$-slant helix ${\Leftrightarrow}H^{\prime}_n-k_1H_{n-1}-k_2H_{n-3}=0$" where $H_n,H_{n-1}$ and $H_{n-3}$ are harmonic curvature functions and $k_1,k_2$ are the Cartan curvature functions of the null curve ${\alpha}$.

• Journal of Ceramic Processing Research
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• v.13 no.spc1
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• pp.93-95
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• 2012

We report on the growth and characterization of the nano- and micro scale GaN structures selectively grown on the vertex of GaN stripes using the metal organic vapor phase epitaxy method and conventional photolithography technique. The triangular shaped nano- and micro GaN structures which have semi-polar {11-22} facets were formed only on the vertex of the lower GaN stripes. Crystalline defects reduction was observed by transmission electron microscopy for upper GaN stripes. We also have grown the InGaN/GaN multi-quantum well structures on the semi-polar facets of the upper GaN stripes. Cathodoluminescence images were taken at 366, 412 and 555 nm related to GaN band edge, InGaN/GaN layer and defects, respectively.