• Korean Chemical Engineering Research
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• 제49권3호
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• pp.357-360
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• 2011

플라즈마 원자층증착 방법을 이용하여 질소를 도핑한 산화아연 나노박막을 Si(111) 기판에 제조하였다. $Zn(C_{2}H_{5})_{2}$, $O_{2}$ 및 $N_{2}$을 사용하여 rf 파워 세기를 50-300 W로 변화시키면서 N-doped ZnO 박막을 제조하였다. 박막의 구조적 광학적 전기적 특성을 각각 XRD, PL, Hall 효과를 측정하여 분석하였다. 플라즈마 rf 파워가 증가함에 따라 ZnO 나노 박막 내의 질소(N) 함유 농도가 높아지고, p형 ZnO의 특성을 보였다.

• 한국안전학회지
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• 제7권1호
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• pp.20-29
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• 1992

Effects of strain hardening exponents on the retardation behavior of fatigue crack propagation are experimentally investigated. The retardation of fatigue crack propagation seems to be induced by the crack closure at crack tip. The phenomenon of crack closure becomes remarkable with the increment of strain hardening exponent and magnitude of percent peak load. The ratio of crack growth increment(a$\_$d//w$\_$d/) is influenced by a single overloading (a$\_$d/) and estimated plastic zone size (W$\_$d/=2r$\_$y/) is increased according with the increasing of strain ha.dening exponents. The number of retarded crack growth cycles were (N$\_$d/) decreased as the baseline stress intensity factor .ange( K$\_$b/) was increased. Within the limitation of these experimental results obtained under the single overload, an empirical relation between crack retardation ratio (Nd/N＊), strain hardening exponent (n) and percent peak load (％PL) has been proposed as; Nd/N＊＝ exp [PL $.$ PL$.$A(n)＋B(n) ] where, A(n)＝${\alpha}$n＋${\beta}$, B(n)＝${\gamma}$n＋$\delta$, PL＝％PL/100 and ${\alpha}$＝0.78, ${\beta}$＝0.54, ${\gamma}$＝0.58 and $\delta$＝-0.01, It is interesting to note that all these constants are identical for materials such as aluminum(A3203), steel(S4SC), steel(SS41) and stainless steel(SUS316) used in this experimental study.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2007년도 추계학술대회 논문집
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• pp.85-86
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• 2007

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2007년도 춘계학술대회 논문집
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• pp.123-124
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• 2007

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 2005년도 춘계학술발표회
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• pp.1088-1089
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• 2005

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2011년도 춘계학술대회 논문집
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• pp.255-256
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• 2011

• 대한금속재료학회지
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• 제48권5호
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• pp.456-461
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• 2010

We investigated the In-based ohmic contacts on Nitrogen-face (N-face) n-type GaN, as well as Ga-face n-type GaN, for InGaN-based vertical Light Emitting Diodes (LEDs). For this purpose, we fabricated Circular Transfer Length Method (CTLM) patterns on the N-face n-GaN that were prepared by using a laser-lift off method, as well as on the Ga-face n-GaN that were prepared by using a dry etching method. Then, In/transparent conducting oxide (TCO) and In/TiW schemes were deposited on the CTLM in order for low resistance ohmic contacts to form. The In/TCO scheme on the Ga-face n-GaN showed high specific contact resistance, while the minimum specific contact resistance was only 3${\times}$10$^{-2}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$, which can be attributed to the high sheet resistance of the TCO layer. In contrast, the In/TiW scheme on the Ga-face n-GaN produced low specific contact resistance of 2.1${\times}$10$^{5}$ $\Omega$-cm$^{2}$ after annealing at 500${^{\circ}C}$ for 1 min. In addition, the In/TiW scheme on the N-face n-GaN also resulted in a low specific contact resistance of 2.2${\times}$10$^{-4}$ $\Omega$-cm$^{2}$ after annealing at 300${^{\circ}C}$. These results suggest that both the Ga-face n-GaN and N-face n-GaN.

• 한국수소및신에너지학회논문집
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• 제15권1호
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• pp.39-45
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• 2004

A 12-cell PEMFC stack was fabricated using the TiN-coated 316 stainless steel bipolar plates as substitute for the expensive and brittle graphite bipolar plates. Open cirtuit voltage and the maximum power of the stack was 12.08 V and 1.197 kW (199.5 A @ 6 V), respectively. Volumetric and gravimetric power density of the stack was calculated to be 373 W/L and 168 W/kg, respectively. Performance of each cell was quite uniform initially while degraded at a singnificantly different rate. During the 1,000 hr-operation at a constant load of 48 A, stack voltage decreased from 9.0 to 7.98 V at a degradation rate of 11 %/1,000 hr. However, degradation rate of each cell was in the wide rage from 1.2 to 31 %/1,000 hr.

• Kyungpook Mathematical Journal
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• 제58권2호
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• pp.347-359
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• 2018

A Kenmotsu manifold $M^n({\phi},\;{\xi},\;{\eta},\;g)$, (n = 2m + 1 > 3) is called a generalized ${\phi}-recurrent$ if its curvature tensor R satisfies $${\phi}^2(({\nabla}_wR)(X,Y)Z)=A(W)R(X,Y)Z+B(W)G(X,Y)Z$$ for all $X,\;Y,\;Z,\;W{\in}{\chi}(M)$, where ${\nabla}$ denotes the operator of covariant differentiation with respect to the metric g, i.e. ${\nabla}$ is the Riemannian connection, A, B are non-vanishing 1-forms and G is given by G(X, Y)Z = g(Y, Z)X - g(X, Z)Y. In particular, if A = 0 = B then the manifold is called a ${\phi}-symmetric$. Now, a Kenmotsu manifold $M^n({\phi},\;{\xi},\;{\eta},\;g)$, (n = 2m + 1 > 3) is said to be generalized ${\phi}-Ricci$ recurrent if it satisfies $${\phi}^2(({\nabla}_wQ)(Y))=A(X)QY+B(X)Y$$ for any vector field $X,\;Y{\in}{\chi}(M)$, where Q is the Ricci operator, i.e., g(QX, Y) = S(X, Y) for all X, Y. In this paper, we study generalized ${\phi}-recurrent$ and generalized ${\phi}-Ricci$ recurrent Kenmotsu manifolds with respect to quarter-symmetric metric connection and obtain a necessary and sufficient condition of a generalized ${\phi}-recurrent$ Kenmotsu manifold with respect to quarter symmetric metric connection to be generalized Ricci recurrent Kenmotsu manifold with respect to quarter symmetric metric connection.

• 충청수학회지
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• 제25권2호
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• pp.201-215
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• 2012

In this paper, we prove the stability in random normed spaces via fixed point method for the functional equation $f(x+y+z+w)\;+\;2f(x)\;+\;2f(y)\;+\;2f(z)\;+\;2f(w)\;-\;f(x+y)\;-\;f(x+z)\;-\;f(x+w)\;-\;f(y+z)\;-\;f(y+w)\;-\;f(z+w)=0$.