• Title/Summary/Keyword: W-N

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Mechanical Properties and Microstructure of AlN/W Composites (AlN/W계 복합재료의 기계적 특성과 미세구조)

  • 윤영훈;최성철;박철원
    • Journal of the Korean Ceramic Society
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    • v.33 no.1
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    • pp.83-91
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    • 1996
  • Monolithic AlN and AlN-W composites were fabricated by pressure-less sintering at 190$0^{\circ}C$ under nitrogen atmosphere and the influences of tungsten phase on the microstructure and mechanical properties were investi-gated. In the fabrication of sintered specimen no additive was used. And monolithic AlN showed substantial grain growth and low relative density. AlN-W composites were fully densified and grain growths of matrix were inhibited. The densification behavior of composites were inferred to be achieved through the liquid phase sintering process such as particle-rearrangement and solutino-reprecipitation. Also the oxid phases which is expected to form liquid phases duringsintering process were detected by XRD analysis. As the tungsten volume content increases fracture strength was decreased and fracture toughness was increased. It was suppo-sed that the strength decrease of composites with tungsten content was due to existence of interface phases. The subcritical crack growth behavior was observed from the stress-strain curve of composites. The effect of the secondary phase and interface phases on toughness in crease were studied through observation of crack propagation path and the influence of residual stress on crack propagation was investigated by X-ray residual stress measurement. In the result of residual stress measurement the compressive stress of matrix in composi-test was increased with tungsten volume content and the compressive stress distribution of matrix must have contributed to the inhibition of crack propagation.

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Dietary Manipulation and Increase in Plasma Unsaturated Fatty Acids in Sheep

  • Rajion, M.A.;Goh, Y.M.;Dahlan, I.;Salam Abdullah, A.
    • Asian-Australasian Journal of Animal Sciences
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    • v.14 no.8
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    • pp.1073-1077
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    • 2001
  • Forty three 7-month old, Barbados Black $Belly{\times}Malin$ crossbred sheep were used for the trial. They were allotted into three treatment groups fed varying levels of oil palm (Elaeis guineensis) frond pellets and commercial sheep pellets. Treatment diets were 80% commercial pellet+20 % (% w/w) oil palm frond pellet (CON group, n=15), 50% commercial pellet+50% oil palm frond pellet (% w/w) (HAF group, n=14) and 80% oil palm frond pellet+20% (% w/w) commercial pellet (OPF group, n=14). The plasma fatty acid profiles from these animals were compared before and after 14 weeks of feeding. Results showed that total unsaturated fatty acid content in the CON group had increased by 10% (p<0.01) from the pre-treatment values. All three treatment groups had significantly different plasma n-6 and n-3 polyunsaturated fatty acid contents at the end of the trial. In fact, the CON group had significantly (p<0.01) more n-6 polyunsaturated fatty acid content compared to its own initial values, and also the values from the HAF and OPF groups. However there was a significant (p<0.01) decline in plasma n-3 polyunsaturated fatty acids in all groups. The final total unsaturated to saturated fatty acid content ratio was significantly (p<0.01) highest in the CON group, demonstrating the high plasma unsaturated fatty acid content in these animals. This study shows the plasma unsaturated fatty acids in sheep can be increased by dietary manipulation.

High performance X-band power amplifier MMIC using a 0.25 ㎛ GaN HEMT technology (0.25 ㎛ GaN HEMT 기술을 이용한 우수한 성능의 X-대역 전력 증폭기)

  • Lee, Bok-Hyung;Park, Byung-Jun;Choi, Sun-Youl;Lim, Byeong-Ok;Go, Joo-Seoc;Kim, Sung-Chan
    • Journal of IKEEE
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    • v.23 no.2
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    • pp.425-430
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    • 2019
  • This work describes the design and characterization of a X-band power amplifier (PA) monolithic microwave integrated circuit (MMIC) using a $0.25{\mu}m$ gate length gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The developed X-band power amplifier MMIC has small signal gain of over 22.7 dB and saturated output power of 43.02 dBm (20.04 W) over the entire band of 9 to 10 GHz. Maximum saturated output power is a 43.84 dBm (24.21 W) at 9.5 GHz. Its power added efficiency (PAE) is 41.0~51.24% and the chip dimensions are $3.7mm{\times}2.3mm$, generating the output power density of $2.84W/mm^2$. The developed GaN power amplifier MMIC is expected to be applied in a variety of X-band radar applications.

[ $NH_3$ ] Pulse Plasma Treatment for Atomic Layer Deposition of W-N Diffusion Barrier (암모니아 펄스 플라즈마를 이용한 원자층 증착된 질화텅스텐 확산방지막 특성)

  • Lee, Chang-Woo
    • Journal of the Microelectronics and Packaging Society
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    • v.11 no.4 s.33
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    • pp.29-35
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    • 2004
  • We have deposited the W-N diffusion barrier on Si substrate with $NH_3$ pulse plasma enhanced atomic layer deposition (PPALD) method by using $WF_6$ and $NH_3$ gases. The $WF_6$ gas reacts with Si that the surface corrosion occurs severely, but the $NH_3$ gas incorporated with pulse plasma and $WF_6$ gas are easily deposited W-N thin film without Si surface corrosion. Because the $NH_3$ with pulse plasma can be active species dissociated and chemisorbed on Si. Thus the Si surface are covered and saturated with nitrogen, which are able to deposit the W-N thin film. We also examine the deposition mechanism and the effect of $NH_3$ pulse plasma treatment.

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박막내의 Stress 형태에 따른 W-N 확산방지막의 열적 안정성 연구

  • Lee, Gyu-Yeong;Kim, Su-In;Kim, Ju-Yeong;Gang, Yeong-Eun;Seong, Jong-Baek;Lee, Ju-Heon;Jo, Min-Su;Kim, Dae-Gwan;Lee, Chang-U
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.271-271
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    • 2011
  • 본 논문에서는 W-N 확산 방지막을 각각 다른 질소 유입 조건 (0 sccm, 0.5 sccm, 1 sccm) 하에 Si (Silicon) (100) 기판 위에 rf (radio-frequency) magnetron sputter를 이용하여 증착하였다. 증착된 박막은 800$^{\circ}C$에서 열처리하였고, 이때 각각의 W-N 확산 방지 막의 열적 안정성을 분석하였다. 기존 W-N박막의 분석은 X-ray diffraction (XRD)와 같은 분광학적 방법을 사용하여 분석하였으나, 이는 점점 미세화 되어가는 반도체 산업의 최근 동향에는 적합하지 않다. 따라서 이번 실험에서는 박막 국부적인 영역에서 nano scale의 분석이 가능한 nano indentation을 이용하여 분석하였다. 본 연구에서는 열적 안정성을 분석하기 위하여 각각 열처리 온도가 다른 박막의 stress 분포를 XRD와 AFM를 이용하여 구한 격자상수로 먼저 박막 전체적인 영역을 분석하였다. 박막의 국부적인 영역은 앞서 언급하였던 nano indentation을 이용하여 stress 분포를 분석하였다. 실험 결과, 표면의 RMS roughness는 3.6에서 1.4 nm으로 변하였으며, 박막은 미열처리에서 열처리 온도의 증가 시 보다 tensile stress를 많이 받는 것으로 분석하였다.

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Growth Behavior of (Ti,W)(C,N) and WC grains in a Co Matrix (Co 액상 내에 공존하는 (Ti,W)(C,N)과 WC입자의 성장 거동)

  • 이보아;윤병권;강석중
    • Journal of Powder Materials
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    • v.11 no.2
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    • pp.165-170
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    • 2004
  • Growth behavior of two different types of grains, faceted and rounded, in a liquid matrix has been studied in the (75WC-25TiCN)-30Co system. Powder samples were sintered above the eutectic temperature for various times under a carbon saturated condition. (Ti,W)(C,N) grains with a rounded shape and WC grains with a faceted shape coexisted in the same Co based liquid. With increasing sintering time, the average size of (Ti.W)(C,N) grains increased continuously and very large WC grains appeared. The growth of rounded (Ti,W)(C,N) grains followed a cubic law, r^3-r^3_0$=kt, where r is the average size of the grains, $r_0$ the initial average size, k the proportionality constant and t the sintering time. indicating a diffusion-controlled growth. On the other hand, the growth of the faceted WC grains resulted in a bimodal grain size distribution, showing an abnormal grain growth. These observations show that the growth behavior of different types of grains is governed by their shape, faceted or rounded, even in the same liquid matrix.

Thermal Stability of W-C-N Diffusion Barrier Deposited by RF Magnetron Sputtering Method (RF Magnetron Sputtering 방식으로 증착된 W-C-N 확산방지막의 열적 안정성 분석)

  • Yoo, Sang-Chul;Kim, Soo-In;Lee, Chang-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.156-157
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    • 2008
  • 반도체 소자 회로의 집적도가 높아짐에 따라 선폭이 감소하였고 고온 공정이 필요하게 되었다. 기존의 반도체 회로 배선 재료인 Al을 사용할 경우 소자의 속도가 느려져서 소자의 신뢰도가 떨어지고 고온공정에서의 문제가 발생되어 이를 해결하기 위한 차세대 배선 물질로 비저항이 낮은 Cu의 사용이 요구되고 있다. 하지만 Cu는 Si와의 확산이 잘 일어나기 때문에 그 사이에서 확산을 막아주는 확산방지막에 대한 필요성이 제기되었고 연구가 활발히 진행되고 있다. 본 논문에서는 Cu와 Si사이의 확산을 방지하기 위한 W-C-N 확산방지막을 물리적 기상 증착법(PVD)중 하나인 RF Magnetron Sputtering 방식을 사용하여 증착하였다. 고온 공정에서의 안정성을 알아보기 위해 $600^{\circ}C$ 부터 $900^{\circ}C$ 까지 $100^{\circ}C$ 단위로 열처리를 하였고 4-point probe 장치를 사용하여 열처리 온도에 따른 비저항 측정을 통해 W-C-N 확산방지막의 특성을 분석하였다.

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Tungsten Nitride Diffusion Barrier with Using Plasma Atomic Layer Deposition for Copper Interconnection (플라즈마 원자층 증착법을 이용한 구리배선용 텅스텐 나이트라이드 확산 방지막의 특성 평가)

  • Park Ji Ho;Sim Hyun Sang;Kim Yong Tae;Kim Hee Joon;Chang Ho Jung
    • Proceedings of the KAIS Fall Conference
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    • 2004.11a
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    • pp.195-198
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    • 2004
  • 실리콘 산화막 위에 구리 확산 방지막으로서 W-N 박막을 $NH_3$ 펄스 플라즈마를 이용한 원자층 증착방법으로 형성하였다. 플라즈마 원자층 증착방법 (PPALD)은 일반적인 원자층 증착방법(ALD)의 성장 기구를 그대로 따라 간다. 그러나 일반적인 ALD 방법에 의해 증착한 W-N 박막에 비해 PPALD 방법으로 증착한 W-N 박막은 F 함유량과 비저항이 감소하였고 열적 안정성에 대한 특성도 향상되었다. 또한 $WF_6$ 가스는 실리콘 산화막과 반응을 하지 않기 때문에 $WF_6$ 가스와 $NH_3$ 가스를 사용해서 ALD 증착방법으로 실리콘 산화막 위에 W-N 박막을 증착하기 어려운 문제점(8,9)을 $NH_3$ 반응종으로 실리콘 산화막 표면을 먼저 변형시켜 $WF_6$ 가스가 산화막과 반응을 할 수 있게 함으로써 ALD 방법으로 W-N 박막을 실리콘 산화막 위에 증착 할 수 있었다.

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Multimode fiber-optic pressure sensor based on dielectric diaphragm (유전체 다이아프램을 이용한 다모드 광섬유 압력센서)

  • 김명규;권대혁;김진섭;박재희;이정희;손병기
    • Journal of the Korean Vacuum Society
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    • v.6 no.3
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    • pp.220-226
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    • 1997
  • An optical intensity-type pressure sensor has been fabricated by coupling multimode optical fiber with 100 nm-Au/30 nm-NiCr/150 nm-$Si_3N_4/300 nm-SiO_2/150 nm-Si_3N_4$ optical reflection layer supported by micromachined frame-shape silicon substrate, and its characteristics was investigated. For the application of $Si_3N_4/SiO_2/Si_3N_4$ diaphragm to the optical reflection layer of the sensor, NiCr and Au films were deposited on the backside of the diaphragm by thermal evaporation , respectively, and thus optical low caused by transmission in the reflection layer could be decreased to a few percents. Dielectric diaphragms with uniform thickness were able to be also reproduced because top- and bottom-$Si_3N_4$ layer of the diaphragm could automatically stop silicon anisotropic etching. The respective pressure ranges in which the sensor showed linear optical output power-pressure characteristics were 0~126.64 kPa, 0~79. 98 kPa, and 0~46.66 kPa, and the respective pressure sensitivities of the sensor were about 20.69 nW/kPa, 26.70 nW/kPa, and 39.33 nW/kPa, for the diaphragm sizes of 3$\times$3 $\textrm{mm}^2$, 4$\times$4 $\textrm{mm}^2$, and 5$\times$5 $\textrm{mm}^2$, indicating that the sensitivity increases as diaphragm size increases.

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Statistical Analysis on Microcrack Length Distribution in Tertiary Crystalline Tuff (제3기 결정질 응회암에서 발달하는 미세균열의 길이 분포에 대한 통계적 분석)

  • Park, Deok-Won
    • The Journal of the Petrological Society of Korea
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    • v.20 no.1
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    • pp.23-37
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    • 2011
  • The scaling properties on the length distribution of microcrack populations from Tertiary crystalline tuff are investigated. From the distribution charts showing length range with 15 directional angles and five groups(I~V), a systematic variation appears in the mean length with microcrack orientation. The distribution charts are distinguished by the bilaterally symmetrical pattern to nearly N-S direction. The whole domain of the length-cumulative frequency diagram for microcrack populations can be divided into three sections in terms of phases of the distribution of related curves. Especially, the linear middle section of each diagram of five groups represents a power-law distribution. The frequency ratio of linear middle sections of five groups ranges from 46.6% to 67.8%. Meanwhile, the slope of linear middle section of each group shows the order: group V($N60{\sim}90^{\circ}E$, -2.02) > group IV($N20{\sim}60^{\circ}E$, -1.55) > group I($N60{\sim}90^{\circ}W$, -1.48), group II($N10{\sim}60^{\circ}W$, -1.48) > group III($N10^{\circ}W{\sim}N20^{\circ}E$, -1.06). Five sub-populations(five groups) that closely follow the power-law length distribution show a wide range in exponents( -1.06 - -2.02). These differences in exponent among live groups emphasizes the importance of orientation effect. In addition, breaks in slope in the lower parts of the related curves represent the abrupt development of longer lengths, which is reflected in the decrease in the power-law exponent. Especially, such a distribution pattern can be seen from the diagram with $N10{\sim}20^{\circ}E,\;N10{\sim}20^{\circ}W$ and $N60{\sim}70^{\circ}W$ directional angles. These three directional angles correspond with main directions of faults developed around the study area. The distribution chart showing the individual characteristics of the length-cumulative frequency diagrams for 15 directional angles were made. By arraying above diagrams according to the categories of three groups(A, B and C), the differences in length-frequency distributions among these groups can be easily derived. The distribution chart illustrates the importance of analysing microcrack sets separately. From the related chart, the occurrence frequency of shorter microcracks shows the order: group A > group B > group C. These three types of distribution patterns could reveal important information on the processes occurred during microcrack growth.