• Journal of the Korean Magnetics Society
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• v.18 no.1
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• pp.32-35
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• 2008

Thermally stable diffusion barrier of tungsten carbon nitride(W-C-N) and of tungsten boron carbon nitride(W-B-C-N) thin films have studied to investigate the impurity behaviors of boron and nitrogen. In this paper we newly deposited tungsten boron carbon nitride(W-B-C-N) thin film for various $W_2B$ target power on silicon substrate. The impurities of the 100nm-thick W-C-N and W-B-C-N thin films provide stuffing effect for preventing the inter-diffusion between W-C-N or W-B-C-N thin films and silicon during the high temperature($700^{\circ}C{\sim}1000^{\circ}C$) annealing process.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.345-349
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• 2005

Low resistive ($300{\mu}{\Omega}$-cm) W-C-N films have been deposited on tetraethylorthosilicate (TEOS) interlayer dielectric by atomic layer deposition (ALD) with $WF_6-N_2-CH_4$ gas. The exposure cycles of $N_2$ and $CH_4$ are synchronized with pulse plasma. The W-C-N films on TEOS layer follow the ALD mechanism and keep constant deposition rate of 0.2 nm/cycle from 10 to 100 cycles. As a diffusion barrier for Cu interconnection the W-C-N films maintain amorphous phase and Cu inter-diffusion is not occurred even at $800^{\circ}C$ for 30 min.

• Journal of the Korean Vacuum Society
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• v.20 no.4
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• pp.266-270
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• 2011

This paper suggest tungsten (W)-carbon (C)-nitrogen (N) thin films for diffusion barrier that W is main material and C and N are additives. W-C-N thin films are deposited with fixed rates of W and C but with a variation of $N_2$ gas flow and W-C-N thin films are heated at $600^{\circ}C$. From the experimental results, the variation of elastoplastic region for W-C-N thin film measured by tribological property is larger than that of elastic region with a variation of $N_2$ gas flow. These results show that the $N_2$ gas flow is more directly related with the elastoplastic region of W-C-N thin film. Nanoindenting test executed 16 times consecutively and we got the stress-strain curve graphs and hardness datas at each sample. Through the stress-strain curve graphs, the standard diviation of stress-strain curve for $N_2$ gas flow rate of 2.0 sccm is smaller than that of 0, 0.5, 1.5 sccm. Consequently, the physical stability of W-C-N thin film depends on the flow rate of $N_2$ gas.

• Journal of the Korean Ceramic Society
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• v.31 no.1
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• pp.25-30
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• 1994

W-Ti-C-N based multiphase hard materials have been prepared from WC/TiN powder mixture. By sintering at and above 190$0^{\circ}C$, the two phases of powder mixture has transformed into intermixed W, W2C and Ti(C, N) phases. For the temperature range between 180$0^{\circ}C$ and 210$0^{\circ}C$, the sintered or hot pressed samples show maximum density and hardness. The seems that metallic W grains enhance the fracture toughness of materials. The wear resistance of the material is found to increase with increasing hardness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.109-110
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• 2005

We have suggested sputtered W-C-N thin film for preventing thermal budget between semiconductor and metal. These results show that the W-C-N thin film has good thermal stability and low resistivity. In this study we newly suggested sputtered W-B-C-N thin diffusion barrier. In order to improve the characteristics, we examined the impurity behaviors as a function of nitrogen gas flow ratio. This thin film is able to prevent the interdiffusion during high temperature (700 to $1000^{\circ}C$) annealing process and has low resistivity ($\sim$200$\mu{\Omega}-cm$). Through the analysis of X-Ray diffraction, resistivity and XPS, we studied structure behavior of W-B-C-N diffusion barrier.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.72-73
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• 2005

Stress behavior was studied to investigate the internal behaviors of boron, carbon, and nitrogen in the 1000${\AA}$-thick tungsten boron carbon nitride (W-B-C-N) thin films. The impurities in the W-B-C-N thin films provide stuffing effects that were very effective for preventing the interdiffusion between interconnection metal and silicon substrate during the subsequent high temperature annealing process. The resistivity of W-B-C-N thin film decreases as an annealing temperature increase. The W-B-C-N thin films have compressive stress, and the stress value decreased up to $4.11\times10^{10}dyne/cm^2$ as an $N_2$ flow rate increases up to 3 sccm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.155-155
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• 2008

계속되는 반도체 산업의 발달로 반도체 배선 공정에서는 Al을 대체할 배선 금속으로 Cu에 대한 관심이 집중되고, 일부 공정에서는 Al을 대신하여 사용하고 있다. 이러한 Cu는 Al에 비교하여 많은 장점을 가지고 있지만 Si 기판과 저온에서 쉽게 확산되는 큰 문제점을 가지고 있다. 따라서 이러한 문제를 해결하기 위한 방법으로 현재까지 연구된 대안으로는 Cu와 Si기판 사이에 확산방지막을 삽입하는 것이 대안으로 알려져 있다. 본 연구는 Cu 금속배선 공정을 위하여 Cu와 Si기판과의 확산을 효과적으로 방지할 확산방지막을 텅스텐(W)을 주 구성 물질로 여기에 불순물을 첨가한 W-C-N 확산방지막에 대하여 연구하였으며, 특히 W-C-N 확산방지막의 결정 및 표면 구조에 대한 물성 특성을 연구하였다. 여러 조건변화에 따라서 확산방지막의 특성을 확인하기 위하여 조건이 다르게 증착된 W-C-N 확산방지막을 상온에서 고온으로 열처리하여 열처리 전후를 WET-SPM (Scanning Probe Microscope)을 사용하여 그 물리적 특성을 조사하였다. 이러한 분석을 통하여 가장 안정된 W-C-N 확산방지막의 증착조건을 확인하였으며, 이를 기반으로 박막의 물리적 특성을 연구하였다.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.133-136
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• 2005

In the case of contacts between semiconductor and metal in semiconductor devices, they tend to be unstable because of thermal budget. To prevent these problems we deposited W-C-N diffusion barrier for preventing the interdiffusion between metal and semiconductor. The thickness of the barrier is $1,000{\AA}$ and the pressure is 3 mTorr during the deposition. In this work we coated LSMO (CMR material) on W-C-N diffusion barrier and then we studied the interface effects between LSMO layer and W-C-N diffusion barrier. We got results that the magnetic characteristics of LSMO thin film are still maintained after annealing at $800^{\circ}C$ for 3 hr because W-C-N thin diffusion barrier was prevented the diffusion of oxygen between LSMO and Si substrate.

• Elastomers and Composites
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• v.40 no.3
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• pp.174-180
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• 2005

Sonochemical synthesis of fullerene oxides $[C_{70}O_n](n=1{\sim}2)$ by fullerene$[C_{70}]$ and metal hexacarbonyl complexes $M(CO)_6$(M=Cr, Mo, W) took place under air atmosphere. The reactivity of fullerene$[C_{70}]$ and several metal hexacarbonyl complexes $M(CO)_6$(M=Cr, Mo, W) under same ultrasonic condition increased in the order of $Mo(CO)_6$ > $W(CO)_6$ > $Cr(CO)_6$. The MALDI-TOF-MS, UV-visible spectra, and HPLC analysis confirmed that the products of sonochemical reaction were $[C_{70}O_n](n=1{\sim}2)$.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.200-204
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• 2011

In this paper, we deposited the tungsten carbon nitride (W-C-N; nitrogen gas flow of 2 sccm) and tungsten carbon (W-C) thin film on silicon substrate using rf magnetron sputter. Then the thin films annealed at $800^{\circ}C$ during 30 minute ($N_2$ gas ambient) for thermal damage. Nano-indenter was executed 16 points on thin film surface to measure the thermal stability, and we also propose the elastic modulus and the Weibull distribution, respectively. This nanotribology method provides statistically reliable information. From these results, the W-C-N thin film included nitrogen gas flow is more stable for film uniformities, physical properties and crystallinities than that of not included nitrogen gas flow.