• Journal of the Korean Ceramic Society
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• v.51 no.4
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• pp.260-264
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• 2014

We developed a novel double dopant bismuth oxide system with Tb and W. When Tb was doped as a single dopant, a Tb dopant concentration more than 20 mol% was required to stabilize bismuth oxides with a high conductivity cubic structure. High temperature XRD analysis of 25 mol% Tb-doped bismuth oxide (25TSB) confirmed that the cubic structure of 25TSB was retained from room temperature to $700^{\circ}C$ with increase in the lattice parameter. On the other hand, we achieved the stabilization of high temperature cubic phase with a total dopant concentration as low as ~12 mol% with 8 mol% Tb and 4 mol% W double dopants (8T4WSB). Moreover, the measured ionic conductivity of 10T5WSB was much higher than 25TSB, thus demonstrating the feasibility of the double dopant strategy to develop stabilized bismuth oxide systems with higher oxygen ion conductivity for the application of SOFC electrolytes at reduced temperature. In addition, we investigated the long-term stability of TSB and TWSB electrolytes.

• Journal of the Semiconductor & Display Technology
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• v.6 no.4
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• pp.5-9
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• 2007

Phase transition and dopant redistribution during silicidation of $CoSi_2$ thin films were characterized depending on their preparation methods. Our results indicated that cleanness of the substrate surface played an important role in the formation of the final phase. This effect was found to be reduced by addition of W resulting in the formation of $CoSi_2$. However, even in this case, the formation of the final phase was achieved at the cost of extra thermal energy, which induced rough interface between the substrate and the silicide film. As for the dopant redistribution, the deposition sequence of Co and Si on SiGe was observed to induce significant differences in the dopant profiles. It was found that co-deposition of Co and Si resulted in the least redistribution of dopants thus maintaining the original dopant profile.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.356-360
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• 2017

We investigated the phase evolution, microstructure, and microwave dielectric properties of Na- and Zr-doped $Ba(Mg_{0.5}W_{0.5})O_3$ [i.e., ($Ba_{1-2x}Na_{2x})(Mg_{0.5-x}Zr_xW_{0.5})O_3$] ceramics. $BaWO_4$ as a secondary phase was observed in all compositions, and it increased as the dopant concentration increased. All specimens revealed a dense microstructure. For the composition of x=0.01, polyhedral grains were observed. As the dopant concentration increased, the densification and the grain growth were promoted by a liquid phase. The quality factor($Q{\times}f_0$) decreased remarkably, whereas the dielectric constant (${\varepsilon}_r$) tended to decrease as the dopant concentration increased. The dielectric constant, quality factor, and temperature coefficient of the resonant frequency of the composition of x=0.01 sintered at $1,700^{\circ}C$ for 1 h were 18.6, 216,275 GHz, and $-22.0ppm/^{\circ}C$, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.955-958
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• 2003

We report the photo-(PL) and electroluminescence (EL) properties of new conjugated compounds based on diphenyl benzeneamine moiety, 4,4'-(1,4-phenylenedi-(1E)-2,1-ethenediyl]bis(N,N-diphenyl-benzenamine](PEDB) and 4,4'-([1,1 -biphenyl]-4,4'-diyldi-2,1-ethenediyl)bis[N,N-diphenyl-benzenamine)(BPEDB), as emitting materials and dopant materials. The ITO/m-MTDATA/NPB/DPVBi + BPEDB(1%) /Alq3/LiF/Al device shows blue EL spectrum at 458nm and high efficiency(5.3 cd/A). PEDB as dopant shows also blue EL spectrum around ${\lambda}$ max=463nm and 4.1 cd/A high efficiency in ITO/m-MTDATA/NPB/DPVBi + PEDB(1%)/Alq3/LiF/Al device.

• Journal of the Korean institute of surface engineering
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• v.46 no.2
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• pp.93-97
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• 2013

We studied the emission characteristics of white phosphorescent organic light-emitting diodes (PHOLEDs), which were fabricated using a two-wavelength method. To optimize emission characteristics of white PHOLEDs, white PHOLEDs with co-doping and blue/co-doping emitting layer (EML) structures were fabricated using a host-dopant system. The total thickness of light-emitting layer was 25 nm and the dopant of blue and red was FIrpic and $Bt_2Ir(acac)$ in UGH3, respectively. In case of co-doping structure, applying micro lens array film showed efficiency improvement from the current efficiency 78.5 cd/A and power efficiency 40.4 lm/W to the current efficiency 131.1 cd/A and power efficiency 65 lm/W and blue / co-doping structure showed efficiency improvement from the current efficiency 43.8 cd/A and power efficiency 22 lm/W to the current efficiency 69 cd/A and power efficiency 32 lm/W.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.857-860
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• 2004

Cubic CdS thin film with the strongest XRD peak (111) at diffraction angle $(\theta)$ of 26.5 was well made at substrate temperature of $150^{\circ}C$. At that time, lattice constant a of the thin film was $5.79{\AA}$, grain size of that was more over ${\mu}m$ and it's resistivity was over $10^3{\Omega}cm$. And the peak of diffraction intensityat miller index (111) of CdS:In thin film with dopant In of 1 atom% was shown higher about 20 % than undoped CdS thin film. Also, CdS:In thin film had in part hexagonal structure among cubic structure as secondary phase. Lattice constant of a and grain size of secondary phase of the film with dopant In of 1 atom% was $5.81{\AA}$ and around $1{\mu}m$ respectively The lowest resistivity of $5.1{\times}10^{-3}{\Omega}cm$ was appeared on dopant In of 1.5 atom%. Optical band gap of undoped CdS thin film was 2.43 eV and CdS:In thin film with dopant In of 0.5 atom% had the largest band gap 2.49 eV.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.773-776
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• 2005

In the fabrication of high performance Blue organic light emitting diode, 2-TNATA[4,4',4"-tris(2-naphthylphenyl-phenylamino)-triphenylamine] as hole injection material and NPB[N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] as hole transport material were deposited on the ITO (Indium Tin Oxide)/Glass substrate by vacuum evaporation. And then, Blue color emission layer was deposited using GDI602 as a host material and GDI691 as a dopant. Finally, small molecule OLED with the structure of ITO/2-TNATA/NPB/GDI602+GDI691/Alq3/LiF/Al was obtained by in-situ deposition of Alq3, LiF and Al as electron transport material, electron injection material and cathode, respectively. Blue OLED fabricated in our experiments showed the color coordinate of CIE(0.14, 0.16) and the maximum luminescence efficiency of 1.06 lm/W at 11 V with the peak emission wavelength of 464 nm.

• Korean Journal of Materials Research
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• v.2 no.3
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• pp.213-219
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• 1992

The microstructure, dopant distribution and electrical properties of the $As^{+}$ ion-implanted surface layer differ significantly depending on the methods of subsequent heat treatments, furnace annealing(FA) and rapid thermal annealing(RTA). The amorphous layer created by ion implantation was recrystallized during the thermal annealing through solid phase epitaxial (SPE) growth. The dopant distribution and electrical properties are discussed with respect to the TEM cross-sectional microstructure observed. The microstructure, dopant distribution and electrical properties depended upon especially the annealing time of the heat treatment.

• Bulletin of the Korean Chemical Society
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• v.30 no.4
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• pp.863-868
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• 2009

New spiro[fluorene-7,9′-benzofluorene]-based blue host material, 5-phenyl-spiro[fluorene-7,9′-benzofluorene] (BH-1P), was successfully prepared by reacting 5-bromo-spiro[fluorene-7,9′-benzofluorene] (1) with phenyl boronic acid through the Suzuki reaction. 5-(N,N-Diphenyl)amino-spiro[fluorene-7,9′-benzofluorene] (BH-1DPA) and diphenyl-[4-(2-[1,1;4,1]terphenyl-4-yl-vinyl)-phenyl]amine (BD-1) were used as dopant materials. 2,5-Bis-(2',2"- bipyridin-6-yl)-1,1-diphenyl-3,4-diphenylsilacyclopentadiene (ET4) and Alq3 were used as electron transfer materials. Their UV absorption, photoluminescence and thermal properties were examined. The blue OLEDs with the configuration of ITO/DNTPD/$\alpha$-NPD/BH-1P:5% dopant/$Alq_3$ or ET4/LiF-Al prepared from the BH-1P host and BH-1DPA and BD-1 dopants showed a blue EL spectrum at 452 nm at 10 V and a luminance of 923.9 cd/$m^2$ with an efficiency of 1.27 lm/W at a current density of 72.57 mA/$cm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.351-352
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• 2008

A new high efficient red PhOLED using a host of $Bebq_2$ and double dopants of $(pq)_2$Ir(acac) and SEC-R411 have been fabricated and evaluated. The device doubly doped with $(pq)_2$Ir(acac) and SFC-R411 showed the current efficiency improvement of 22% under a luminance of 10000 cd/$m^2$ in comparision with the device singly doped with SFC-R411. The luminance, current efficiency and central wavelength of the doubly doped device were 9300 cd/$m^2$ at 7V, 11.1 cd/A under a luminance of 10000 cd/$m^2$ and 625 nm, respectively.