• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.7
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• pp.6-13
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• 2006

Tin doped indium oxide(ITO) and Al doped zinc oxide(ZnO:Al) films, which are widely used as a transparent conductor in optoelectronic devices, were prepared by using the capacitively coupled DC magnetron sputtering method. ITO and ZnO:Al films with the optimum growth conditions showed each resistivity of $1.67{\times}10^{-3}[{\Omega}-cm],\;2.2{\times}10^{-3}[{\Omega}-cm]$ and transmittance of 89.61[%], 90.88[%] in the wavelength range of the visible spectrum. The two types of 5 inch-PDP cells with ZnO:Al and ITO transparent electrodes were made under the same manufacturing conditions. The PDP cell with ZnO:Al film was optimally operated in the mixing gas rate of Ne(base)-Xe(8[%]), and at gas pressure of 400[Torr]. It also shows the average measured brightness of $836[cd/m^2]$ at voltage range of $200{\sim}300$[V]. Luminous efficiency, one of the key parameter for high brightness and low power consumption, ranges from 1.2 to 1.6[lm/W] with increasing frequency of ac power supplier from 10 to 50[Khz]. The brightness and luminous efficiency are lower than those with ITO electrode by about 10[%]. However, these values are considered to be enough for the normal operation of PDP TV.

• Journal of the Korean Society of Radiology
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• v.13 no.6
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• pp.831-840
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• 2019

The X-ray detector by liquid crystal with front light was proposed and verified by a X-ray image. The proposed detector utilizes the visible light instead of the electric signal by transistor. Therefore, it shows low noise and can be fabricated at low cost. The liquid crystal detector uses the orientation change of the liquid crystal molecule by conductivity change of the photoconductive layer. We can get the X-ray image from the transmitted light through the liquid crystal. The X-ray dose was calibrated from the measured transmittance of the visible light after comparison to the reference transmittance curve of the liquid crystal. The amorphous Se was used for photo con ducting layer and parylene was used for the liquid crystal alignment instead of the conventional alignment layer which needs high-temperature process over 200℃. The proposed X-ray detector can decrease the X-ray dose by high sensitivity which was verified by simulation. After the fabrication of the X-ray detector, the X-ray image was obtained as a function of the bias voltage to the liquid crystal. 10 lines/mm resolution was obtained from the line pattern and we will apply it to the 17inch diagonal liquid crystal X-ray detector with 3π retardation.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.11
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• pp.993-998
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• 2014

Silver (Ag) grid patterned PET substrates were manufactured by thermal roll-imprinting methods. We coated highly conductive layer (HCL) as a supply electrode on the Ag grid patterned PET in the three kinds of conditions. One was no-HCL without conductive PEDOT:PSS on the Ag grid patterned PET substrate, another was thin-HCL coated with ~50 nm thickness of conductive PEDOT:PSS on the Ag grid PET, and the other was thick-HCL coated with ~95 nm thickness of conductive PEDOT:PSS. These three HCLs in order showed 73.8%, 71.9%, and 64.7% each in transmittance, while indicating $3.84{\Omega}/{\Box}$, $3.29{\Omega}/{\Box}$, and $2.65{\Omega}/{\Box}$ each in sheet resistance. Fabrication of organic solar cells (OSCs) with HCL Ag grid patterned PET substrates showed high power conversion efficiency (PCE) on the thin-HCL device. The thick-HCL device decreased efficiency due to low open circuit voltage ($V_{OC}$). And the Ag grid pattern device without HCL had the lowest energy efficiency caused by quite low short current density ($J_{SC}$).

• Journal of Korean Ophthalmic Optics Society
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• v.7 no.2
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• pp.163-167
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• 2002

Improved optical switching property of electrochromic nickel hydroxide/nickel glass thin film is reported. Nickel metal film was deposited on glass by e-beam evaporation before following electrochemical redox cycling to form nickel hydroxide for electrochromic activation. Without ITO (indium tin oxide) layer as electrical conductor, this electrode showed more rapid coloration rate than nickel hydroxide film on ITO substrate in the change of the electric voltage and optical transmittance. XPS analysis confirmed the existence of ultra-thin nickel metal layer (${\sim}10{\AA}$) between electrochemically grown nickel hydroxide and the glass substrate. It is concluded that the remained nickel metal nano-layer attribute to the conduction layer and the enhanced response time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.331-331
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• 2009

Hafnium oxide ($HfO_2$) attracted by one of the potential candidates for the replacement of si-based oxides. For applications of the high-k gate dielectric material, high thermodynamic stability and low interface-trap density are required. Furthermore, the amorphous film structure would be more effective to reduce the leakage current. To search the gate oxide materials, metal-insulator-metal (MIM) capacitors was fabricated by pulsed laser deposition (PLD) on indium tin oxide (ITO) coated glass with different oxygen pressures (30 and 50 mTorr) at room temperature, and they were deposited by Au/Ti metal as the top electrode patterned by conventional photolithography with an area of $3.14\times10^{-4}\;cm^2$. The results of XRD patterns indicate that all films have amorphous phase. Field emission scanning electron microscopy (FE-SEM) images show that the thickness of the $HfO_2$ films is typical 50 nm, and the grain size of the $HfO_2$ films increases as the oxygen pressure increases. The capacitance and leakage current of films were measured by a Agilent 4284A LCR meter and Keithley 4200 semiconductor parameter analyzer, respectively. Capacitance-voltage characteristics show that the capacitance at 1 MHz are 150 and 58 nF, and leakage current density of films indicate $7.8\times10^{-4}$ and $1.6\times10^{-3}\;A/cm^2$ grown at 30 and 50 mTorr, respectively. The optical properties of the $HfO_2$ films were demonstrated by UV-VIS spectrophotometer (Scinco, S-3100) having the wavelength from 190 to 900 nm. Because films show high transmittance (around 85 %), they are suitable as transparent devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.44-44
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• 2008

To date, rubbing has been widely used to align LC molecules uniformly. Although rubbing can be simple, it has fundamental problems such as the generation of defects by dust and static electricity, and difficulty in achieving a uniform LC alignment on a large substrate. Therefore, non contact alignment has been investigated. Ion beam induced alignment method, which provides controllability, nonstop process, and high resolution display. In this study, we investigated liquid crystal (LC) alignment with ion beam (IB) that non contact alignment technique on polyimide and electro-optical characteristics of twisted nematic (TN)-liquid crystal display (LCD) on the polyimide under various ion beam angles. In this experiment, Polyimide layer was coated on glass by spin-coating and Voltage-transmittance(VT) and response time characteristics of the TN cell were measured by a LCD evaluation system. The good characteristics of the nematic liquid crystal (NLC) alignment with the ion beam exposure polyimide surface was observed. The tilt angle of NLC on the PI surface with ion beam exposure can be measured under $1^{\circ}$ for all of irradiation angles. In addition, it can be achieved the good EO properties, and residual DC property of the ion beam aligned TN cell on polyimide surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.43-43
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• 2008

Recently, it is widely studied to liquid crystal (LC) alignment using ion-beam exposure. Because conventional rubbing method has some problems such as defects from dust and electrostatic charges and rubbing scratch during rubbing process. Moreover rubbing method needs cleaning process to remove these defects. Therefore rubbing-free techniques like ion-beam method are strongly required. We studied LC alignment by controlling ion-beam irradiation angles and electro-optical (EO) characteristics of twisted nematic LC on the polyimide surface. In this experiment, a good uniform alignment of the nematic liquid crystal (NLC) with the ion-beam exposure on the polyimide (PI) surface was observed. We also achieved low pretilt angle as function of ion-beam irradiation angles. X-ray photoelectron spectroscopic (XPS) analysis provided chemical evidence for LC alignment by controlling ion-beam irradiation angles. In addition, it can be achieved the good EO properties of the ion-beam-aligned twisted nematic liquid crystal display (TN-LCD) on PI surface. Some other experiments results and discussion will be included in the presentation.

• Transactions on Electrical and Electronic Materials
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• v.8 no.6
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• pp.265-267
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• 2007

The liquid crystal(LC) aligning capabilities of a nematic liquid crystal(NLC) on a homeotropic polyimide(PI) surface using a new ion-beam method were studied. Exposure ion-beam of $45^{\circ}$ incidence angle shows a good LC alignment of the NLC on the homeotropic PI surface. Also, on the homeotropic PI surface, the tilt angle of the NLC by exposure ion-beam of $45^{\circ}$ incidence angle had a tendency to decrease as increased ion-beam energy density. And, on the homeotropic PI surface, the alignment character of the NLC with respect to ion-beam energy was good at 1500 eV. And we achieved satisfactory result for EO character.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.138-138
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• 2009

Recently, thin-film solar cells of Cu(In,Ga)$Se_2$(CIGS) have reached a high level of performance, which has resulted in a 19.9%-efficient device. These conventional devices were typically fabricated using chemical bath deposited CdS buffer layer between the CIGS absorber layer and ZnO window layer. However, the short wavelength response of CIGS solar cell is limited by narrow CdS band gap of about 2.42 eV. Taking into consideration the environmental aspect, the toxic Cd element should be replaced by a different material. It is why during last decades many efforts have been provided to achieve high efficiency Cd-free CIGS solar cells. In order to alternate CdS buffer layer, ZnS buffer layer is grown by using chemical bath deposition(CBD) technique. The thickness and chemical composition of ZnS buffer layer can be conveniently by varying the CBD processing parameters. The processing parameters were optimized to match band gap of ZnS films to the solar spectrum and exclude the creation of morphology defects. Optimized ZnS buffer layer showed higher optical transmittance than conventional thick-CdS buffer layer at the short wavelength below ~520 nm. Then, chemically deposited ZnS buffer layer was applied to CIGS solar cell as a alternative for the standard CdS/CIGS device configuration. This CIGS solar cells were characterized by current-voltage and quantum efficiency measurement.

• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2396-2400
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• 2007

Transparent In-doped (1 at.%) zinc oxide (IZO) thin films are deposited by pulsed DC magnetron sputtering with H2 mixed Ar atmosphere on glass substrate without any heating process. Even at room temperature, highly c-axis oriented IZO thin films were grown in perpendicular to the substrate. The hydrogenated IZO (IZO:H) film isolated in H2 atmosphere for 30 min exhibited an average optical transmittance higher than 85% and low electrical resistivity of less than 2.7 × 10?3 Ω·cm. These values are comparable with those of commercially available ITO. Each of the IZO films was used as an anode contact to fabricate organic light-emitting diodes (OLEDs) and the device performances studied. At the current density of 1 × 103 A/m2, the OLEDs with IZO:H (H2) anode show excellent efficiency (11 V drive voltage) and a good brightness (8000 cd/m2) of the light emitted from the devices, which are as good as the control device built on a commercial ITO anode.