• Title/Summary/Keyword: Voltage-dependent

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Effects of acidic pH on voltage-gated ion channels in rat trigeminal mesencephalic nucleus neurons

  • Han, Jin-Eon;Cho, Jin-Hwa;Choi, In-Sun;Kim, Do-Yeon;Jang, Il-Sung
    • The Korean Journal of Physiology and Pharmacology
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    • v.21 no.2
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    • pp.215-223
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    • 2017
  • The effects of acidic pH on several voltage-dependent ion channels, such as voltage-dependent $K^+$ and $Ca^{2+}$ channels, and hyperpolarization-gated and cyclic nucleotide-activated cation (HCN) channels, were examined using a whole-cell patch clamp technique on mechanically isolated rat mesencephalic trigeminal nucleus neurons. The application of a pH 6.5 solution had no effect on the peak amplitude of voltage-dependent $K^+$currents. A pH 6.0 solution slightly, but significantly inhibited the peak amplitude of voltage-dependent $K^+$ currents. The pH 6.0 also shifted both the current-voltage and conductance-voltage relationships to the depolarization range. The application of a pH 6.5 solution scarcely affected the peak amplitude of membrane currents mediated by HCN channels, which were profoundly inhibited by the general HCN channel blocker $Cs^+$ (1 mM). However, the pH 6.0 solution slightly, but significantly inhibited the peak amplitude of HCN-mediated currents. Although the pH 6.0 solution showed complex modulation of the current-voltage and conductance-voltage relationships, the midpoint voltages for the activation of HCN channels were not changed by acidic pH. On the other hand, voltage-dependent $Ca^{2+}$ channels were significantly inhibited by an acidic pH. The application of an acidic pH solution significantly shifted the current-voltage and conductance-voltage relationships to the depolarization range. The modulation of several voltage-dependent ion channels by an acidic pH might affect the excitability of mesencephalic trigeminal nucleus neurons, and thus physiological functions mediated by the mesencephalic trigeminal nucleus could be affected in acidic pH conditions.

Analytical Expressions of Temperature Dependent Breakdown Voltage and On-Resistance for Si Power MOSFETs (실리콘 전력 MOSFET의 온도 관련 항복 전압과 ON 저항을 위한 해석적 표현)

  • 정용성
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.5
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    • pp.290-297
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    • 2003
  • Analytical Expressions of temperature dependent breakdown voltage and on-resistance for silicon power MOSFETs are induced by employing the temperature dependent effective ionization coefficient extracted from temperature dependent ionization coefficients for electron and hole, and electron mobility in silicon. The analytical results for temperature dependent breakdown voltage are compared with experimental results for tile doping concentration, 4x10$^{14}$ cm$^{-3}$ , 1x10$^{15}$ cm$^{-3}$ , 6x10$^{16}$ cm$^{-3}$ respectively. The variations of temperature dependent on-resistance and breakdown voltage dependent ideal specific on-resistance are also compared with the ones reported previously. Good fits with the experimental results ate found for the breakdown voltages within 10% in error for the temperature in the range of 77~300K at each doping concentration.

Temperature-dependent characteristics of Current-Voltage for Double Gate MOSFET (동작 온도에 따른 Double Gate MOSFET의 전류-전압특성)

  • 김영동;고석웅;정학기
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2003.05a
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    • pp.693-695
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    • 2003
  • In this paper, we have investigated temperature-dependent characteristics of current-voltage for double gate MOSFET with main gate and side gate. DG MOSFET has the main gate length of 50nm and the side gate length of 70nm. We have investigated the temperature-dependent characteristics of current-voltage and drain voltage is changed from 0V to 5.0V at $V_{mg}$ =1.5V and $V_{sg}$ =3.0V. We have obtained a very good characteristics of current-voltage for 77K. We have simulated using ISE-TCAD tool for characteristics analysis of device.

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Characteristics of Voltage-Dependent Clacium Uptake and Norepinephrine Release in Hypothalamus of SHR

  • Yi, Sook-Young;Kim, Yun-Tai;Kim, Kyeong-Man;Ko, Kwang-Ho
    • Archives of Pharmacal Research
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    • v.17 no.4
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    • pp.226-230
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    • 1994
  • The characteristics of voltage-dependent ^{45}Calcium$ uptake and norepinephrine release as factors controlling neural activities in the hypothalamus which is an important regulatory site for cardiovascular function wre studied. Two groups of animals : male spontaneously hyperterisive rat (SHR) and age-matched nomotensive wistar rat (NW) were used in this study. Animals at 4, 6 and 16 weeks of age were sacrificed by decapitiation and the hypothalamus was dissected out. Voltage-dependent calcium uptake and norepinephrine release were determined from hypothalamic synaptosomes either in low potassium (5 mM) or high potassium (41 mM) stimulatory conditions by using ^{45}Ca$ isotope and HPLC-ECD techniques. Degrees of voltage-dependent ^{45}Calcium$ uptake and norepinephrine release evoked by calcium uptake in the hypothalamus of prehypertensive phase (4 weeks old) of SHR were significantly smaller than those in NW of the same age. However, in the developmental phase (6 weeks old) and the established phase (16 weeks old) of hyperrtension in SHR, degrees of voltage-dependent ^{45}Calcium$ uptake and norepinephrine release were similar to those of age-matched normotensive wistae eats. These data imply that the deficit in hypothalamic norepinephrine release might be an important underlying factor for the development of hypertension in SHR.

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Simulation Method of Temperature Dependent Threshold Voltage Shift in Metal Oxide Thin-film Transistors (온도에 의한 산화물 박막트랜지스터의 문턱전압 이동 시뮬레이션 방안)

  • Kwon, Seyong;Jung, Taeho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.3
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    • pp.154-159
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    • 2015
  • In this paper, we propose a numerical method to model temperature dependent threshold voltage shift observed in metal oxide thin-film transistors (TFTs). The proposed model is then implemented in AIM-SPICE circuit simulation tool. The proposed method consists of modeling the well-known stretched-exponential time dependent threshold voltage shift and their temperature dependent coefficients. The outputs from AIM-SPICE tool and the stretched-exponential model at different temperatures in the literature are compared and they show a good agreement. Since metal oxide TFTs are the promising candidate for flat panel displays, the proposed method will be a good stepping stone to help enhance reliability of fast-evolving display circuits.

Inhibition of voltage-dependent K+ current in rabbit coronary arterial smooth muscle cells by the class Ic antiarrhythmic drug propafenone

  • An, Jin Ryeol;Li, Hongliang;Seo, Mi Seon;Park, Won Sun
    • The Korean Journal of Physiology and Pharmacology
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    • v.22 no.5
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    • pp.597-605
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    • 2018
  • In this study, we demonstrated the inhibitory effect of the Class Ic antiarrhythmic agent propafenone on voltage-dependent $K^+$ (Kv) channels using freshly isolated coronary artery smooth muscle cells from rabbits. The Kv current amplitude was progressively inhibited by propafenone in a dose-dependent manner, with an apparent $IC_{50}$ value of $5.04{\pm}1.05{\mu}M$ and a Hill coefficient of $0.78{\pm}0.06$. The application of propafenone had no significant effect on the steady-state activation and inactivation curves, indicating that propafenone did not affect the voltage-sensitivity of Kv channels. The application of train pulses at frequencies of 1 or 2 Hz progressively increased the propafenone-induced inhibition of the Kv current. Furthermore, the inactivation recovery time constant was increased after the application of propafenone, suggesting that the inhibitory action of propafenone on Kv current is partially use-dependent. Pretreatment with Kv1.5, Kv2.1 or Kv7 inhibitor did not change the inhibitory effect of propafenone on the Kv current. Together, these results suggest that propafenone inhibits the vascular Kv channels in a dose- and use-dependent manner, regardless of $Na^+$ channel inhibition.

Compensation of Voltage Variation Using Active Power-Dependent Reactive Power Control with Multiple VRE Systems Connected in a Distribution Line (배전 선로에 연계된 다수대의 변동성 재생에너지 발전 시스템의 출력 유효전력 변동에 따른 무효전력 제어를 이용한 전압 변동 보상)

  • Lee, Sang-Hoon;Kim, Soo-Bin;Song, Seung-Ho
    • Journal of Wind Energy
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    • v.9 no.4
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    • pp.47-56
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    • 2018
  • This paper introduces an active power dependent standard characteristic curve, Q(P) to compensate for voltage variations due to the output of distributed generation. This paper presents an efficient control method of grid-connected inverters by comparing and analyzing voltage variation magnitude and line loss according to the compensation method. Voltage variations are caused not only by active power, but also by the change of reactive power flowing in the line. In particular, the system is in a relatively remote place in a coastal area compared with existing power plants, so it is relatively weak and may not be suitable for voltage control. So, since it is very important to keep the voltage below the normal voltage limit within the specified inverter capacity and to minimize line loss due to the reactive power. we describe the active power dependent standard characteristic curve, Q(P) method and verify the magnitude of voltage variation by simulation. Finally, the characteristics of each control method and line loss are compared and analyzed.

A Study of The Voltage Transfer Function Dependent On Input Conditions For An N-Input NAND Gate (N-Input NAND Gate에서 입력조건에 따른 Voltage Transfer Function에 관한 연구)

  • Kim In-Mo;Song Sang-Hun;Kim Soo-Won
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.10
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    • pp.510-514
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    • 2004
  • In this paper, we analytically examine the voltage transfer function dependent on input conditions for an N-Input NAND Gate. The logic threshold voltage, defined as a voltage at which the input and the output voltage become equal, changes as the input condition changes for a static NAND Gate. The logic threshold voltage has the highest value when all the N-inputs undergo transitions and it has the lowest value when only the last input connected to the last NMOS to ground, makes a transition. This logic threshold voltage difference increases as the number of inputs increases. Therefore, in order to provide a near symmetric voltage transfer function, a multistage N-Input Gate consisting of 2-Input Logic Gates is desirable over a conventional N-Input Gate.

Temperature Dependent Breakdown Voltage and On-resistance of Si Power MOSFETs (실리콘 전력 MOSFET의 온도에 따른 항복전압 및 On 저항)

  • Park, Il-Yong;Choe, Yeon-Ik;Jeong, Sang-Gu
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.4
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    • pp.246-248
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    • 2000
  • Closed-form expressions for the temperature dependent breakdown voltage and the on-resistance of the Si power MOSFETs were derived by employing effective temperature dependent ionization coefficient for electrons and holes. The breakdown voltage increases by 20% and the on-resistance increases 2 times when the temperature increases from 300 K to 423 K. The analytic results normalized to the values at 300 K show good agreement with the experimental data of Motorola within 3.5% and 7% for the breakdown voltage and the on-resistance, respectively.

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Voltage-Dependent Inactivation of Calcium Currents in the Mouse Eggs

  • Park, Young-Geun;Yang, Young-Seon;Yum, Myung-Kul;Hong, Seong-Geun
    • The Korean Journal of Physiology
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    • v.25 no.2
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    • pp.125-131
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    • 1991
  • Inactivation properties of Ca current in the unfertilized eggs of mouse were studied by using the whole cell voltage clamp technique and single microelectrode voltage clamp technique. Membrane potential was held at -80 mV and step depolarization was applied from -50 mV to 50 mV for $200{\sim}500\;ms$. Peak of inward Ca currents was $-2{\sim}-4\;nA$ at a membrane Potentials from -20 mV to 0 mV and outward currents were not observed within the membrane voltage range studied $(-50{\sim}50\;mV)$. Inward currents were fully inactivated within 200 ms after the onset of step depolarization. As the membrane became depolarized, time constant of inactivation (${\tau}$) was decreased but remained around $20{\sim}30\;ms$ beyond 10 mV. When $Ca^{2+}$ was used as a charge earlier, inactivation of inward $Ca^{2+}$ current also occured and time course of inactivation was similar to that of $Ca^{2+}$ currents as charge carrier. In the bathing solution containing high potassium $(131\;mM\;K^+)$, process of inactivation was not changed except a parallel decrease of value for the entire range of membrane potential. Steady-state inactivation of the $current(h_{\infty})$ obtained from the double pulse experiment showed the voltage-dependent change. These results suggested that inactivation of Ca currents in the unfertilized eggs of mouse was voltage-dependent.

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