• Journal of Radiation Protection and Research
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• v.38 no.2
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• pp.78-90
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• 2013

Recently, the interest on exposure to radiation is rising. The radiation exposure of mammography is higher in absorbed dose than of X-ray, therefore unnecessary exposure needs to be reduced, and higher image quality is needed. Generally, ray quality of the radiation imaging is an important factor that determines image quality and the amount of ray exposure, and they are affected by tube voltage and added filter. The X-ray energy that is exposed from mammography device is generally a continuous spectrum, which includes low energy that has minute influence on the image quality, and high energy that hinders contrast on image. Currently, molybdenum (Mo) and rhodium (Rh) are the most used added filters for mammography device, and they are used differently according to the energy region of X-ray. This study aims to find out the degree of reduction in exposure dose according to the thickness of aluminum (Al), and to study the changes in image quality and dose when the added filter plates that are made with niobium (Nb) or zirconium (Zr) are used, other than molybdenum (Mo) and rhodium (Rh), the two most used added filters that have similar atomic number and K-absorption regions as Nb and Zr. In this study, single-added filters of molybdenum (Mo), niobium (Nb), and zirconium (Zr) are used, and in some cases, Aluminum (Al) is combined with the single filters. In this case, image quality is considered to be improved depending on the type of added filters, and by using Aluminum (Al) filter together with the others, unnecessary X-ray of low energy would be absorbed, therefore the dose is expected to decrease without any influence when the concentration level becomes identical.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.210-216
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• 2010

This paper investigates the dependence of a-Si:H/c-Si passivation and heterojunction solar cell performances on various cleaning processes of silicon wafers. It is observed that the passivation quality of a-Si:H thin-films on c-Si wafers depends highly on the initial H-termination properties of the wafer surface. The effective minority carrier lifetime (MCLT) of highly H-terminated wafer is beneficial for obtaining high quality passivation of a-Si:H/c-Si. The wafers passivated by p(n)-doped a-Si:H layers have low MCLT regardless of the initial H-termination quality. On the other hand, the MCLT of wafers incorporating intrinsic (i) a-Si:H as a passivation layer shows sensitive variation with initial cleaning and H-termination schemes. By applying the improved cleaning processes, we can obtain an MCLT of $100{\mu}sec$ after H-termination and above $600{\mu}sec$ after i a-Si:H thin film deposition. By adapting improved cleaning processes and by improving passivation and doped layers, we can fabricate a-Si:H/c-Si heterojunction solar cells with an active area conversion efficiency of 18.42%, which cells have an open circuit voltage of 0.670V, short circuit current of $37.31\;mA/cm^2$ and fill factor of 0.7374. These cells show more than 20% pseudo efficiency measured by Suns-$V_{oc}$ with an elimination of series resistance.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.3
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• pp.640-646
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• 2017

A GEN TEST of the auxiliary power unit of a T-50 series aircraft is performed as part of the operational test of its emergency power system on the ground before flight. At this time, the auxiliary power unit should be automatically turned off via the response signal of the ECU when power is not normally supplied to the emergency power system. If the correct operation of the emergency power system cannot be confirmed on the ground, it is not possible to proceed with the flight. This kind of defect is a major factor causing the operation rate of the aircraft to be decreased. The defect code identified by the ECU was confirmed as a defect in the inverter. However, the same defect was found after replacing the inverter. This report presents an improved method of identifying the cause of the defect by analyzing the response characteristics of the ECU and emergency power system and allows the ECU to be recognized as the cause of the defect if the inverter does not generate a voltage within a certain time. Also, the application of the improved method confirmed that it can satisfy the output request time of the emergency power system and effectively prevent the auto-shutdown of the auxiliary power unit.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.478-478
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• 2012

Recently, there are many researches in order to increase the deposition rate (D/R) and improve film uniformity and quality in the deposition of microcrystalline silicon thin film. These two factors are the most important issues in the fabrication of the thin film solar cell, and for the purpose of that, several process conditions, including the large area electrode (more than 1.1 X 1.3 (m2)), higher pressure (1 ~ 10 (Torr)), and very high frequency regime (VHF, 40 ~ 100 (MHz)), have been needed. But, in the case of large-area capacitively coupled discharges (CCP) driven at frequencies higher than the usual RF (13.56 (MHz)) frequency, the standing wave and skin effects should be the critical problems for obtaining the good plasma uniformity, and the ion damage on the thin film layer due to the high voltage between the substrate and the bulk plasma might cause the defects which degrade the film quality. In this study, we will propose the new concept of the large-area multi-electrode (a new multi-electrode concept for the large-area plasma source), which consists of a series of electrodes and grounds arranged by turns. The experimental results with this new electrode showed the processing performances of high D/R (1 ~ 2 (nm/sec)), controllable crystallinity (~70% and controllable), and good uniformity (less than 10%) at the conditions of the relatively high frequency of 40 MHz in the large-area electrode of 280 X 540 mm2. And, we also observed the SEM images of the deposited thin film at the conditions of peeling, normal microcrystalline, and powder formation, and discussed the mechanisms of the crystal formation and voids generation in the film in order to try the enhancement of the film quality compared to the cases of normal VHF capacitive discharges. Also, we will discuss the relation between the processing parameters (including gap length between electrode and substrate, operating pressure) and the processing results (D/R and crystallinity) with the process condition map for ${\mu}c$-Si:H formation at a fixed input power and gas flow rate. Finally, we will discuss the potential of the multi-electrode of the 3.5G-class large-area plasma processing (650 X 550 (mm2) to the possibility of the expansion of the new electrode concept to 8G class large-area plasma processing and the additional issues in order to improve the process efficiency.

• Korean Journal of Materials Research
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• v.23 no.1
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• pp.35-40
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• 2013

In this study, the influence on the surface passivation properties of crystalline silicon according to silicon wafer thickness, and the correlation with a-Si:H/c-Si heterojunction solar cell performances were investigated. The wafers passivated by p(n)-doped a-Si:H layers show poor passivation properties because of the doping elements, such as boron(B) and phosphorous(P), which result in a low minority carrier lifetime (MCLT). A decrease in open circuit voltage ($V_{oc}$) was observed when the wafer thickness was thinned from $170{\mu}m$ to $50{\mu}m$. On the other hand, wafers incorporating intrinsic (i) a-Si:H as a passivation layer showed high quality passivation of a-Si:H/c-Si. The implied $V_{oc}$ of the ITO/p a-Si:H/i a-Si:H/n c-Si wafer/i a-Si:H/n a-Si:H/ITO stacked layers was 0.715 V for $50{\mu}m$ c-Si substrate, and 0.704 V for $170{\mu}m$ c-Si. The $V_{oc}$ in the heterojunction solar cells increased with decreases in the substrate thickness. The high quality passivation property on the c-Si led to an increasing of $V_{oc}$ in the thinner wafer. Short circuit current decreased as the substrate became thinner because of the low optical absorption for long wavelength light. In this paper, we show that high quality passivation of c-Si plays a role in heterojunction solar cells and is important in the development of thinner wafer technology.

• Journal of radiological science and technology
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• v.25 no.2
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• pp.47-55
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• 2002

We came to the following conclusion as the results of experiment on the image quality of mammography and the average glandular dose using 4 apparatuses at 3 hospitals in Seoul. 1. Whereas the measurement of half value layer showed no differences among the apparatuses, the measurement by an attenuation curve method showed some differences by 5.9%. There were 9.1% differences in the measurement by aluminum conversion method. 2. The basic density of an automatic exposure control unit must be D = 1.40, but there was no automatic exposure unit adjusted precisely at any hospitals. The unit at the B hospital exceeded the allowable limit by ${\pm}0.15$. 3. In the photographing using an automatic exposure control unit and the management of an automatic film processor using a sensitometer, most automatic film processors were well kept. But in some cases the mean value of a fluctuation coefficient exceeded the allowable limit. There is a need for more cautious management. 4. The image quality of breast phantom photography was affected by the screen/film system among the hospitals. 5. The average glandular dose at a breast of 4.2 cm thickness depended on the tube voltage, In the case of Mo/Mo, it was measured $0.26{\sim}1.39\;mGy$ less than ACR standard 3.0 mGy.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.4
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• pp.121-127
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• 2022

β-Gallium oxide (Ga₂O₃), an ultra-wide bandgap semiconductor, has attracted great attention due to its promising applications for high voltage power devices. The most stable phase among five different polytypes, β-Ga₂O₃ has the wider bandgap of 4.9 eV and higher breakdown electric field of 8 MV/cm. Furthermore, it can be grown from melt source, implying higher growth rate and lower fabrication cost than other wide bandgap semiconductors such as SiC, GaN and diamond for the power device applications. In this study, β-Ga₂O₃ bulk crystals were grown by the edge-defined film-fed growth (EFG) process. The growth direction and the principal surface were set to be the [010] direction and the (100) plane of the β-Ga₂O₃ crystal, respectively. The spectra measured by Raman an alysis could exhibit the crystal phase an d impurity dopin g in the β-Ga₂O₃ ingot, and the crystallinity quality and crystal direction were analyzed using high-resolution X-ray diffraction (HRXRD). The crystal quality and various properties of as-grown β-Ga₂O₃ ribbon was systematically analyzed in order to investigate the spatial variation in entire crystal grown by EFG method.

• Journal of the Korean Society of Radiology
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• v.16 no.4
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• pp.387-394
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• 2022

120 kVp FBP reconstruction image standard by using raw data after scanning by changing tube voltage among the NECK CT protocols that are broad applied in clinical practice using a human phantom including thyroid gland The usefulness of the DLIR reconstruction technique was investigated. As a result, CTDIvol decreased when the DLIR reconstruction technique was applied, and in particular, the image quality obtained under the same standard scanning conditions at a lower dose for ASIR-V and DLIR reconstruction was reached than when FBP was applied at the same kVp In addition, as a result of SNR and CNR analysis, the DLIR reconstructed image was analyzed with high SNR and CNR values, and SSIM analysis, the SSIM index of the 100 kVp, DLIR reconstructed image was measured to be close to 1, and it was analyzed that the similarity of the reconstructed image to the original image was high (p>0.05). If the results of this study are used to supplement clinical image evaluation and further develop an algorithm applicable to various anatomical structures, it is thought that it will be useful for clinical application as it is possible to maintain the image quality while lowering the examination dose.

• Journal of the Korean Society of Radiology
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• v.17 no.4
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• pp.515-521
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• 2023

The radiation dose received by the patient varies according to the tube current and time used during dental intraoral imaging. A large amount of tube current is required for image quality, but the radiation dose to the patient increases accordingly. Therefore, in this study, the optimal amount of tube current that can reduce the radiation dose received by the patient while securing the image quality was calculated through the evaluation of the image quality according to the tube current used during intraoral imaging through simulation. The average tube current, time, and tube voltage presented in the Guidelines for Diagnostic Reference Level for intraoral radiography were used as basic imaging conditions, and images were obtained when only the tube current was changed, and then the optimal tube current was compared and analyzed with the basic image quantity was calculated. Images were obtained by changing the tube current to 0.1, 0.5, 1, 2, 3, 4 and 5 mA under the basic conditions of 63 kV, 6 mA, and 0.29 s. The obtained image was evaluated for structural similarity index with the image taken under the condition of 6 mA using the ICY program. As a result, even under the condition of 0.5 mA tube current, the index of structural similarity with the image of 6 mA was evaluated to be high. Based on these results, it is considered that the radiation dose given to the patient can be greatly reduced if imaging is performed at 0.5 mA instead of 6 mA during dental intraoral imaging.

• Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
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• v.8 no.11
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• pp.215-222
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• 2018

In this paper, the research on the energy storage system adapting super-capacitor has been performed. The most advanced features compared to the conventional lead-acid battery systems is that it can obtain high power capability due to the super capacitor power characteristics. The suggested system can attain high power in short times and achieve high power quality improvements. The application areas are power quality improvement system, motor start power which requires high power during transient times. The energy conversion system consists of bi-directional converter and inverter and advantages of high speed, high power charging and discharging performances. The design steps for the two loop controller of the bi-directional inverter are suggested and verified by the experiment and manufacturing. The two loop controller design starts from linearized transfer function which is calculated from the state averaging model including state decoupling method. The current controller requirements are 20% overshoot and settling time and voltage controller are no overshoot and settling time which is 10 times longer than current controller. The design is verified from the step input response. The designed controllers have unity power factor characteristics and thus can improve the power quality of the grid. It also has fast response time and zero steady state error.