• Journal of the Korean Ceramic Society
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• v.47 no.6
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• pp.638-642
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• 2010

The spinel material $Li_4Ti_5O_{12}$ has attracted considerable attention as an anode electrode material for many battery applications owing to its light weight and high energy density. However, the real capacity of $Li_4Ti_5O_{12}$ powder as determined by the solid-state method is lower than the ideal capacity. In this study, we investigated the effect of the dopants in M-doped spinel $Ba_xLi_{4-2x}Ti_5O_{12}$(x=0.005, 0.05, 0.1) powders prepared by the solid-state reaction method and used as the anode material in lithiumion batteries. The results confirmed the effect of the Ba and Sr dopants on the powder properties of the spinel $Li_4Ti_5O_{12}$, which exhibited a pure spinel structure without any secondary phase in its XRD pattern. Moreover, the electrochemical properties of the spinel M-LTO materials were investigated using a half cell. The electrochemical data show that cells with anodes made of undoped $Li_4Ti_5O_{12}$ and Ba- and Sr-doped $Li_4Ti_5O_{12}$ have discharge capacities of 97, 130, and 112 mAh/g, respectively, at the first cycle. Moreover, the Ba- and Sr-doped spinel $Li_4Ti_5O_{12}$ demonstrated good properties in the mid-voltage range at 1.55 V, showing stable cyclic voltammogram properties which surpassed those of the same material without Ba or Sr at 1 C after 100 cycles.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.413-417
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• 2010

Line to ground faults by deterioration of insulators has frequently occurred in power system, and the main cause is surface contamination of the insulators. The contamination of insulator is analyzed by monitoring the surface leakage current flowing them. The suspension insulator is monitored by installation of a zero-phase current sensor(ZCT), but the line-post insulator is impossible to apply the same method because of its large diameter structure. This paper proposed a detection method of surface leakage current for a line-post insulator, and it can easily be applied to new and/or built insulators. The leakage current is indirectly calculated from the potential difference between the metal electrode attached on the surface of insulator and the ground connector. To evaluate the performance of the proposed method, the leakage current is compared as a function of contamination condition controlled by the density of NaCl solution. The leakage current is proportioned to the density of NaCl solution, and the voltage detected by the electrode showed the same trend. From the experimental results, we designed and fabricated a monitoring device which is composed of a detection electrode, signal converter, microprocessor, and ZigBee, and its measurement range is $10{\mu}A{\sim}5mA$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.20-21
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• 2008

Ferroelectric vinylidene fluoride-trifluoroethylene ($VF_2$-TrFE) copolymer films were directly deposited on degenerated Si ($n^+$, 0.002 $\Omega{\cdot}cm$) using by dip coating method. A 1 ~ 3 wt% diluted solution of purified vinylidene fluoride-trifluoroethylene ($VF_2$:TrFE=70:30) in a dimethylformamide (DMF) solvent were prepared and deposited on silicon wafers using dip coating method for 10 seconds. After Post-Annealing in a vacuum ambient at 100~200 $^{\circ}C$ for 60 min, upper aluminum electrodes were deposited by thermal evaporation through the shadow mask to complete the MFS structure. The ferroelectric $\beta$-phase peak of films, depending on the annealing temperature, started to show up around $125^{\circ}C$, and the intensity of the peak increased with increasing annealing temperature. Above $175^{\circ}C$, the peak started to decrease. The C-V characteristics were measured using a Precision LCR meter (HP 4284A) with frequency of 1MHz and a signal amplitude of 20 mV. The leakage-current versus electric-field characteristics was measured by mean of a pA meter/DC voltage source (HP 4140B).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.425-425
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• 2008

Bismuth-antimony-telluride based thermoelectric thin film materials were prepared by metal organic vapor phase deposition using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_2Te_3$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $4{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_2Te_3$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_2Te_3$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the device was heated by heating block and the voltage output was measured. The highest estimated power of 1.3mW is obtained at the temperature difference of 45K. We provide a promising approach for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials which can employ nanostructures for high thermoelectric properties.

• Journal of IKEEE
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• v.22 no.2
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• pp.427-431
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• 2018

This research was worked about $Ga_2O_3$ Epi wafer that was one of the mose wide band gap semiconductors to be used power semiconductor industry. This wafer was grown $5.3{\mu}m$ thickness on Sn doped $Ga_2O_3$ Substrate by HVPE(Hydride Vapor Phase Epitaxy). Generally, we can fabricate 600V class power semiconductor devices when the thickness of compoound power semiconductor is $5{\mu}m$. but in case of $Ga_2O_3$ Epi wafer, we can obtain over 1000V class. As a result of J-V measurment of the grown $Ga_2O_3$ Epi wafer, we obtain $2.9-7.7m{\Omega}{\cdot}cm^2$ on resistance. Specially, in case of reverse, we comfirmed a little leakage current when the reverse voltage is over 200V.

• Journal of IKEEE
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• v.23 no.4
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• pp.1257-1264
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• 2019

A 3-GSymbol/s/lane transceiver, which supports the mobile industry processor interface (MIPI) C-physical layer (PHY) specification version 1.1, is proposed. It performs channel mismatch correction to improve the signal integrity that is deteriorated by using three-level signals over three channels. The proposed channel mismatch correction is performed by detecting channel mismatches in the receiver and adjusting the delay times of the transmission data in the transmitter according to the detection result. The channel mismatch detection in the receiver is performed by comparing the phases of the received signals with respect to the pre-determined data pattern transmitted from the transmitter. The proposed MIPI C-PHY receiver is designed using a 65 nm complementary metal-oxide-semiconductor (CMOS) process with 1.2 V supply voltage. The area and power consumption of each transceiver lane are 0.136 ㎟ and 17.4 mW/GSymbol/s, respectively. The proposed channel mismatch correction reduces the time jitter of 88.6 ps caused by the channel mismatch to 34.9 ps.

• Journal of IKEEE
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• v.23 no.4
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• pp.1280-1287
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• 2019

Grid-connected bidirectional PCS(Power Conditioning System) technology is a technology for implementing distributed renewable energy smart grid. And it is always charged by using power collected from solar modules and commercial grid power among vast smart grid systems, and stored when needed.It is a hybrid energy storage device that allows power to be released into the low voltage system. To this end, a PV input power converter with MPPT function, a bidirectional power converter for battery charging and discharging, and a DC Link input are output to a 3 phase 380V AC system, and if nessary, the bidirectional DC/DC converter We designed and developed a PCS with three power converter structures composed of inverters that perform battery charging. Currently, this system is applied to the site of Jeju, which is vulnerable to power outages and fire accidents.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.154-161
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• 2006

This paper describes the new types of ngative differential resistance (NDR) IC applications which use a monolithic quantum-effect device technology based on the RTD/HBT heterostructure design. As a digital IC, a low-power/high-speed MOBILE (MOnostable-BIstable transition Logic Element)-based D-flip flop IC operating in a non-return-to-zero (NRZ) mode is proposed and developed. The fabricated NRZ MOBILE D-flip flop shows high speed operation up to 34 Gb/s which is the highest speed to our knowledge as a MOBILE NRZ D-flip flop, implemented by the RTD/HBT technology. As an analog IC, a 14.75 GHz RTD/HBT differential-mode voltage-controlled oscillator (VCO) with extremely low power consumption and good phase noise characteristics is designed and fabricated. The VCO shows the low dc power consumption of 0.62 mW and good F.O.M of -185 dBc/Hz. Moreover, a high-speed CML-type multi-functional logic, which operates different logic function such as inverter, NAND, NOR, AND and OR in a circuit, is proposed and designed. The operation of the proposed CML-type multi-functional logic gate is simulated up to 30 Gb/s. These results indicate the potential of the RTD based ICs for high speed digital/analog applications.

• Journal of Advanced Marine Engineering and Technology
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• v.10 no.2
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• pp.156-164
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• 1986

In the case of boiling on high temperature wall, vapor film covers fully or parcially the surface. This phenomenon, film boiling or transition boiling, is very important in the surface heat treatment of metal, design of cryogenic heat exchanger and emergency cooling of nuclear reactor. Mainly supposed hydraulic-thermal accidents in nuclear reactor are LCCA (Loss of Coolant Accident) and PCM (Power-Cooling Mismatch). Recently, world-wide studies on reflooding of high temperature rod bundles after the occurrence of the above accidents focus attention on wall temperature history and required time in transient cooling process, wall superheat at rewet point, heat flux-wall superheat relationship beyond the transition boiling region, and two-phase flow state near the surface. It is considered that the further systematical study in this field will be in need in spite of the previous results in ref. (2), (3), (4). The paper is the study about the fast transient cooling process following the wall temperature excursion under the CHF (Critical Heat Flux) condition in a forced convective subcooled boiling system. The test section is a vertically arranged concentric annulus of 800 mm long and 10 mm hydraulic diameter. The inner tube, SUS 304 of 400 mm long, 8 mm I.D, and 7 mm O.D., is heated uniformly by the low voltage AC power. The wall temperature measurements were performed at the axial distance from the inlet of the heating tube, z=390 mm. 6 chromel- alumel thermocouples of 76 .mu.m were press fitted to the inner surface of the heating tube periphery. To investigate the heat transfer characteristics during the fast transient cooling process, the outer surface (fluid side) temperature and the surface heat flux are computed from the measured inner surface temperature history by means of a numerical method for inverse problems of transient heat conduction. Present cooling (boiling) curve is sufficiently compared with the previous results.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.17 no.1
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• pp.207-212
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• 2017

The cables installed to deliver high electric power from a generator at a thermoelectric power station are XLPE (or CV) cables. Depending on the installation and usage conditions, the cables in operation start deteriorating from the time of initial operation. Some cables can cause accidents due to faulty construction or other environmental factors. In order to prevent cable accidents, regular auditing of power cables is required. We have invented a measuring device for systematic surveillance and prevention of accidents, and installed the device at Korean Western Power Co. Ltd. which measures load currents through the cables. In this paper, we present the load current measured using our device, analyze the load characteristics by measures current, compare the ampacity defined by IEC standard, and present a basic data to obtain the temperature of cable conductors.