• Korean Journal of Materials Research
• /
• v.21 no.4
• /
• pp.192-195
• /
• 2011

The electro-deposition of compound semiconductors has been attracting more attention because of its ability to rapidly deposit nanostructured materials and thin films with controlled morphology, dimensions, and crystallinity in a costeffective manner (1). In particular, low band-gap $A_2B_3$-type chalcogenides, such as $Sb_2Te_3$ and $Bi_2Te_3$, have been extensively studied because of their potential applications in thermoelectric power generator and cooler and phase change memory. Thermoelectric $Sb_xTe_y$ films were potentiostatically electrodeposited in aqueous nitric acid electrolyte solutions containing different ratios of $TeO_2$ to $Sb_2O_3$. The stoichiometric $Sb_xTe_y$ films were obtained at an applied voltage of -0.15V vs. SCE using a solution consisting of 2.4 mM $TeO_2$, 0.8 mM $Sb_2O_3$, 33 mM tartaric acid, and 1M $HNO_3$. The stoichiometric $Sb_xTe_y$ films had the rhombohedral structure with a preferred orientation along the [015] direction. The films featured hole concentration and mobility of $5.8{\times}10^{18}/cm^3$ and $54.8\;cm^2/V{\cdot}s$, respectively. More negative applied potential yielded more Sb content in the deposited $Sb_xTe_y$ films. In addition, the hole concentration and mobility decreased with more negative deposition potential and finally showed insulating property, possibly due to more defect formation. The Seebeck coefficient of as-deposited $Sb_2Te_3$ thin film deposited at -0.15V vs. SCE at room temperature was approximately 118 ${\mu}V/K$ at room temperature, which is similar to bulk counterparts.

• Korean Journal of Materials Research
• /
• v.14 no.11
• /
• pp.764-768
• /
• 2004

Perovskite Pb(Mn_{1/3}Sbu_{2/3})O_2-Pb(Zr,Ti)O_3\;(PMS-PZT) was prepared and ZnO doping effects on its piezoelectric properties were investigated. Pyrochlore phase was not identified in the PMS-PZT ceramics with $0\sim5\;mol\%$ ZnO sintered at $1100^{\circ}C$ for 2 hrs, and maximum sintered density of $7.92 g/cm^3$ was obtained. Piezoelectric charge constant and voltage constant increased to $359{\times}10^{-12}\;C/N\;and\;22.5{\times}10^{-13}\;Vm/N$, respectively, with increasing ZnO content. Mechanical quality factor reduced considerably with increasing ZnO content. When the ZnO content was 3 $mol\%$, electromechanical coupling factor and relative dielectric constant showed maximum values of $56\%$ and 1727, respectively. This should be evaluated by complicated variations of sintered density, tetragonality of lattice, grain size, and A-site vacancy generated by ZnO addition and $Zn^{2+}$ substitution.

• Journal of the Microelectronics and Packaging Society
• /
• v.11 no.2 s.31
• /
• pp.29-35
• /
• 2004

Hafnium-oxide gate dielectric films deposited by a metal organic chemical vapor deposition technique on a $N_2-plasma$ treated SiNx and a hydrogen-terminated Si substrate have been investigated. In the case of $HfO_2$ film deposited on a hydrogen-terminated Si substrate, suppressed crystallization with effective carbon impurity reduction was obtained at $450^{\circ}C$. X-ray photoelectron spectroscopy indicated that the interface layer was Hf-silicate rather than phase separated Hf-silicide and silicon oxide structure. Capacitance-voltage measurements show equivalent oxide thickness of about 2.6nm for a 5.0 nm $HfO_2/Si$ single layer capacitor and of about 2.7 nm for a 5.7 nm $HfO_2/SiNx/Si$ stack capacitor. TEM shows that the interface of the stack capacitor is stable up to $900^{\circ}C$ for 30 sec.

• The Journal of The Korea Institute of Intelligent Transport Systems
• /
• v.17 no.5
• /
• pp.128-134
• /
• 2018

In this paper, two ports feeding a microstrip patch antenna using a quadrature hybrid circuit was proposed to enhance the bandwidth for the global positioning system(GPS). The square patch was designed, and the probe feeding was applied. The quadrature hybrid chip circuit for two-port feeding was designed, and output ports that have a 90-degree phase difference feed to the patch antenna. The designed patch and quadrature hybrid circuit were implemented on an FR4 board, and were combined. The measurement of the bandwidth within a voltage standing wave ratio(VSWR) of 2:1 and axial ratio(AR) in 3dB were wide band as 29% BW (1,230~1,700 MHz) and 15.87% BW (1,400~1,650 MHz), respectively. Antenna gain were measured 2.75dBi at the center frequency.

• Journal of the korean academy of Pediatric Dentistry
• /
• v.25 no.4
• /
• pp.671-682
• /
• 1998

Electrophysiological phenomena of pyramidal cells in the CA1 area of the dorsal hippocampus were recorded from and filled with neurobiotin in anesthetized rats. The electropharmacological properties of membrane as well as the cellular-synaptic generation of rhythmic slow activity (theta) were examined. The intracellular response characteristics of these pyramidal cells were distinctly different from responses of interneurons. Pyramidal cells had a high resting membrane potential, a low input resistance, and a large amplitude action potential. A afterhyperpolarization was followed a single action potential. Most of pyramidal cells did not display a spontaneous firing. Pyramidal cells displayed weak inward rectification and anodal break excitation. The slope of the frequency-current relation was 53.4 Hz/nA for the first interspike interval and 15.9 Hz/nA for the last intervals, suggesting the presence of spike frequency adaptation. Neurobiotin-filled neurons showed pyramidal morphology. Cells were generally bipolar dendritc processes ramifying in stratum lacunosum-moleculare, radiatum, and oriens. Commissural stimulation discharged pyramidal cells, followed by excitatory and inhibitory postsynaptic potentials (EPSPs and IPSPs). The frequency of theta-related membrane potential oscillation was voltage-independent in pyramidal neurons. At strong depolarization levels (less than 30 mV) pyramidal cells emitted sodium spike oscillation, phase-locked to theta. The observations provide direct evidence that theta-related rhythmic hyperpolarization of principal cells is brought by the rhythmically discharging interneurons. Furthermore, the findings in which interneurons were also paced by rhythmic inhibitory postsynaptic potentials during theta suggest that they were periodically hyperpolarized by their GABAergic septal afferents.

• Journal of the Korean Ceramic Society
• /
• v.44 no.12
• /
• pp.710-714
• /
• 2007

LSGM$(La_{0.8}Sr_{0.2}Ga_{0.8}Mg_{0.2}O_{3-{\delta}})$ is the very promising electrolyte material for lower-temperature operation of SOFCs, especially when realized in anode-supported cells. But it is notorious for reacting with other cell components and resulting in the highly resistive reaction phases detrimental to cell performance. LDC$(La_{0.4}Ce_{0.6}O_{1.8})$, which is known to keep the interfacial stability between LSGM electrolyte and anode, was adopted in the anode-supported cell, and its effect on the interfacial reactivity and electrochemical performance of the cell was investigated. No severe interfacial reaction and corresponding resistive secondary phase was found in the cell with LDC buffer layer, and this is due to its ability to sustain the La chemical potential in LSGM. The cell exhibited the open circuit voltage of 0.64V, the maximum power density of 223 $mW/cm^2$, and the ohmic resistance of $0.17{\Omega}cm^2$ at $700^{\circ}C$. These values were much improved compared with those from the cell without any buffer layer, which implies that formation of the resistive reaction phases in LSGM and then deterioration of the cell performance is resulted mainly from the La diffusion from LSGM electrolyte to anode.

• The Korean Journal of Ceramics
• /
• v.3 no.4
• /
• pp.263-268
• /
• 1997

RuO$_3$ thin films were deposited on Si(100) substrate at low temperatures by hot-wall metalorganic chemical vapor deposition. Bis(cyclopentadienyl) ruthenium, Ru$(C_5H_5)_2$, was used as the precursor RuO$_2$single phase was obtained at a low deposition temperature of 25$0^{\circ}C$ and the crystallinity of RuO$_2$thin films improved with increasing deposition temperature. RuO$_2$thin films grow perpendicularly to the substrate and show the columnar structure. The grain size of RuO$_2$films drastically increases with increasing the deposition temperature. The resistivity of the 180 nm-thick RuO$_2$thin films deposited at 27$0^{\circ}C$ was 136 $\mu$$\Omega$-cm and increased with decreasing film thickness. SrBi$_2Ta_2O_4$ thin films deposited by rf magnetron sputtering on the RuO$_2$bottom electrodes showed a fatigue-free characteristics up to ~10$^10$ cycles under 5 V bipolar square pulses and the remanent polarization, 2 P$_r$ and the coercive field, 2 E, were 5.2$\mu$C/$\textrm{cm}^2$ and 76.0 kV/cm, respectively, for an applied voltage of 5 V The leakage current density was about 7.0$\times$10$^{-6}$ A/$\textrm{cm}^2$ at 150 kV/cm.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.6 no.3
• /
• pp.406-414
• /
• 1996

We studied the phase formation and the effect of electrical properties of PZT thin films with changing the oxygen partial pressure in cooling after deposition of PZT thin film by reactive sputtering method. The roughness of thin film increased with decreasing the oxygen partial pressure in cooling due to the evaporation on the surface ofthin films and the grain size was not changed very much. The hysteresis property of PZT thin film was improved toward having a good squareness with increasing the cooling oxygen partial pressure. We observed the decrease of remanent polarization, retained polarization and coercive field with decreasing the oxygen partial pressure. Dielectric constant decreased gradually and internal bias field increased in the measurement of dielectric constant-voltage property with decreasing cooling oxygen partial pressure. We observed the increase of nonswitched polarization in the measurement of field accelerated retention and the decrease of nonswitched polarization with increasing the bias time.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.12 no.5
• /
• pp.424-431
• /
• 2007

This thesis proposed H-Bridge Multi-Level Inverter for Fluidized Bed Combustion Boiler Secondary Air Fan in 200MW thermal power plant. The adjustable speed drive systems improve the efficiency in lightly load condition and extend the life span of motor by limiting the over current at starting. H-Bridge Multi-level Inverter is composed of the several series low voltage power cell inverters, which have the independent isolated do link, in each phase. KEPRI(Korea Electric Power Research Institute) has successfully completed to develop, install, and commission H-Bridge Multi-level Inverter(6.6kV, 1MVA). This thesis gives a full detail about H-Bridge Multi-level Inverter, proposed boiler DCS(Distributed Control System) logic, and commissioning test result.

• Proceedings of the KIEE Conference
• /
• 2002.07a
• /
• pp.262-264
• /
• 2002

This paper shows the design standard of KEPCO on the contamination design for 345 kV and 154 kV transmission tower. Up to now, because the design standard of KEPCO on the insulation design contains 154 kV transmission system only, we had investigated the 343 kV system for the revision of design standard, with respect to the contamination design, we have used the same design philosophy which were adopted to the 765 kV transmission tower. In order to determine the number of insulator discs, we had investigated the withstand voltage of discs according to the level of ESDD(Equivalent Salt Deposit Density) and kinds of disc types. The TOV(Power Frequency Temporary Overvoltage) were estimated by EMTP(Electromagnetic Transient Program) for both 154 kV and 345 kV transmission system. The overvoltage level was appeared 1.35 p.u. between phase to ground for both 154 kV and 345 kV transmission system, but finally this factor was not applied to the design standard considering current design standard and economic point of view. With regard to classification of contamination area of 345 kV transmission system, we added the clean area which was not specified in the current design practise.