• Transactions of the Korean hydrogen and new energy society
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• v.23 no.4
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• pp.373-381
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• 2012

To determine the performance characteristics of motorcycle engine using biogas for practical use, the intake system of a 110 cc motorcycle engine is properly modified to operate with biogas as a fuel. Biogas is a potentially renewable fuel for replacing gasoline in future, but it has high percentage of $CO_2$ that could lead to slow the burning rate of biogas-air mixture and cause instability in combustion. Thus, the performance characteristics of biogas-fueled motorcycle engines could be different from those of gasoline motorcycle engines. In this paper, the important parameters of performance characteristics (such as: power output, thermal efficiency, fuel consumption, exhaust emission,${\cdots}$) of biogas-fueled motorcycle engine are studied and estimated with change of engine speed and load. The obtained results when operating with biogas are used to compare with that of gasoline fuel under the same operating conditions. Engine speed in the experimental is changed from 1500 rpm (idle-mode) up to 3500 rpm by a step of 500 rpm. Engine load is changed from zero to maximum load with the help of an exciting voltage device from generator-type dynamometer. The experimental results show that the tested engine operated with richer biogas-air mixture than that of gasoline-air mixture under the same test conditions. Biogas-fueled engine gives a higher fuel consumption and lower thermal efficiency under the same power output. Brake thermal efficiency of biogas engine is found to be about 3% lower than gasoline-fueled motorcycle engine for whole range of speed. Exhaust emission of biogas-fueled motorcycle engine (such as: CO, HC) is found to be lower than the limitation level of the emission standards of Vietnam for motorcycle engines (CO <4.5% HC <1200 ppm).

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.1A
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• pp.80-86
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• 2010

This work has been measured and analyzed the device degradation of NBTI (Negative Bias Temperature Instability) stress induced the increase of gate-induced-drain-leakage(GIDL) current for p-MOS transistors of gate channel length 0.13 [${\mu}m$]. From the relation between the variation of threshold voltage and subthreshold slop by NBTI stress, it has been found that the dominant mechanism for device degradation is the interface state generation. From the GIDL measurement results, we confined that the EHP generation in interface state due to NBTI stress led to the increase of GIDL current. As a results, one should take care of the increased GIDL current after NBTI stress in the ultra-thin gate oxide device. Also, the simultaneous consideration of reliability characteristics and dc device performance is highly necessary in the stress parameters of nanoscale CMOS communication circuit design.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.330-330
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• 2007

Polycrystalline mercuric iodide $HgI_2$) films are being developed as a new detector technology for digital x-ray imaging. The $HgI_2$ is generally vacuum deposited by physical vapor deposition (PVD) process. But the PVD thick deposition has been caused any instability in the biasing due to any defects or cracks. In this work we present a new particle-in-binder (PIB) methodologies used for the $HgI_2$ thick films. These growth techniques can be easily extended to produce much larger film areas. This paper, for the first time, presents results and comparison of polycrystalline $HgI_2$ films derived by various PIB methods. We investigated the structural and morphological properties of the films using X-ray diffraction (XRD) and scanning electron microscopy (SEM) analysis. The films were characterized with respect to their electrical properties and in response to x-ray photons. Physical and electrical results were also compared between conventional polycrystalline PVD and our detectors. Leakage current as low as $350\;pA/cm^2$ at the bias voltage of ~ 200 V has been observed. And high sensitivity and good linearity in the response to x-rays was obtained in the film derived by PIB sedimentation method. Our future efforts will concentrate on optimization of film growth techniques for uniform large area deposition on image readout arrays.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.176-176
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• 2007

Flat-panel direct conversion detectors used in compound substance of semiconductor are being studied for digital x-ray imaging. Recently, such detectors are deposited by physical vapor deposition(PVD) generally. But, most of materials (HgI2, PbI2, TlBr, PbO) deposited by PVD have shown difficult fabrication and instability for large area x-ray imaging. Consequently, in this paper, we propose applicable potentialities for screen printing method that is coated on a substrate easily. It is compared to electrical properties among semiconductors such as $HgI_2$, $PbI_2$, PbO, HgBrI, InI, and $TlPbI_3$ under investigation for direct conversion detectors. Each film detector consists of an ~25 to $35\;{\mu}m$ thick layer of semiconductor and was coated onto the substrate. Substrates of $2cm{\times}2cm$ have been used to evaluate performance of semiconductor radiation detectors. Dark current, sensitivity and physics properties were measured. Leakage current of $HgI_2$ as low as $9pA/mm^2$ at the operation bias voltage of ${\sim}1V/{\mu}m$ was observed. Such a value is not better than PVD process, but it is easy to be fabricated in high quality for large area x-ray Imaging. Our future efforts will concentrate on optimization of growth of film thickness that is coated onto a-Si TFT array.

• Wind and Structures
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• v.34 no.2
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• pp.173-183
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• 2022

The galloping of iced conductors has long been a severe threat to the safety of overhead transmission lines. Compared with normal transmission lines, the ultra-high-voltage (UHV) transmission lines are more prone to galloping, and the damage caused is more severe. To control the galloping of UHV lines, it is necessary to conduct a comprehensive analysis of galloping characteristics. In this paper, a large-span 1000-kV UHV transmission line in China is taken as a practical example where an 8-bundled conductor with D-shaped icing is adopted. Galerkin method is employed for the time history calculation. For the wind attack angle range of 0°~180°, the galloping amplitudes in vertical, horizontal, and torsional directions are calculated. Furthermore, the vibration frequencies and galloping shapes are analyzed for the most severe conditions. The results show that the wind at 0°~10° attack angles can induce large torsional displacement, and this range of attack angles is also most likely to occur in reality. The galloping with largest amplitudes in all three directions occurs at the attack angle of 170° where the incoming flow is at the non-iced side, due to the strong aerodynamic instability. In addition, with wind speed increasing, galloping modes with higher frequencies appear and make the galloping shape more complex, indicating strong nonlinear behavior. Based on the galloping amplitudes of three directions, the full range of wind attack angles are divided into five galloping regions of different severity levels. The results obtained can promote the understanding of galloping and provide a reference for the anti-galloping design of UHV transmission lines.

• Journal of the Semiconductor & Display Technology
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• v.22 no.1
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• pp.28-32
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• 2023

Recently, the use of stable lithium nanostructures as substrates and electrodes for secondary batteries can be a fundamental alternative to the development of next-generation system semiconductor devices. However, lithium structures pose safety concerns by severely limiting battery life due to the growth of Li dendrites during rapid charge/discharge cycles. Also, enabling long cyclability of high-voltage oxide cathodes is a persistent challenge for all-solid-state batteries, largely because of their poor interfacial stabilities against oxide solid electrolytes. For the development of next-generation system semiconductor devices, solid electrolyte nanostructures, which are used in high-density micro-energy storage devices and avoid the instability of liquid electrolytes, can be promising alternatives for next-generation batteries. Nevertheless, poor lithium ion conductivity and structural defects at room temperature have been pointed out as limitations. In this study, a low-dimensional Graphene Oxide (GO) structure was applied to demonstrate stable operation characteristics based on Li+ ion conductivity and excellent electrochemical performance. The low-dimensional structure of GO-based solid electrolytes can provide an important strategy for stable scalable solid-state power system semiconductor applications at room temperature. The device using uncoated bare NCA delivers a low capacity of 89 mA h g-1, while the cell using GO-coated NCA delivers a high capacity of 158 mA h g−1 and a low polarization. A full Li GO-based device was fabricated to demonstrate the practicality of the modified Li structure using the Li-GO heterointerface. This study promises that the lowdimensional structure of Li-GO can be an effective approach for the stabilization of solid-state power system semiconductor architectures.

• Nuclear Engineering and Technology
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• v.56 no.1
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• pp.195-206
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• 2024

Shenzhen Innovation Light source Facility (SILF) is a 3.0 GeV fourth generation diffraction limited synchrotron light source currently under construction in Shenzhen. The SILF storage ring is proposed to use two 500 MHz single cell superconducting radio frequency (SRF) cavities to provide 2.4 MV RF voltage. In this study, we examined the geometric structure of mature CESR superconducting cavities and adopted a beam-pipe-type extraction scheme for high-order modes (HOM). One of the objectives of SRF cavity design and optimization in this study is to reduce E_p/E_acc and B_p/E_acc as much as possible to reduce power loss and ensure stable operation of the cavity. To reduce the risk of beam instability and thermal breakdown, the HOM and Multipacting (MP) are simulated. Moreover, the mechanical properties of the cavity are analyzed, including frequency sensitivity from pressure of liquid helium (LHe), stress, tuning, Lorentz force detuning (LFD), the microphone effect, and buckling. By comprehensive design and optimization of 500 MHz single-cell SRF cavities, a superconducting cavity for SILF storage ring was developed. This paper will detailed present the design and simulation.

• Applied Chemistry for Engineering
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• v.31 no.1
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• pp.97-102
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• 2020

Recently, various degradation mechanisms of lithium secondary battery cathode materials have been revealed. As a result, many studies on overcoming the limitation of cathode materials and realizing new electrochemical properties by controlling the degradation mechanism have been reported. Li-rich layered oxide is one of the most promising cathode materials due to its high reversible capacity. However, the utilization of Li-rich layered oxide has been restricted, because it undergoes a unique atomic structure change during the cycle, in turn resulting in unwanted electrochemical degradations. To understand an atomic structure deterioration mechanism and suggest a research direction of Li-rich layered oxide, we deeply evaluated the atomic structure of 0.4Li₂MnO₃_0.6LiNi_1/3Co_1/3Mn_1/3O₂ Li-rich layered oxide during electrochemical cycles, by using an atomic-resolution analysis tool. During a charge process, Li-rich materials undergo a cation migration of transition metal ions from transition metal slab to lithium slab due to the structural instability from lithium vacancies. As a result, the partial structural degradation leads to discharge voltage drop, which is the biggest drawback of Li-rich materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.182-187
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• 2011

In this paper, PBTI characteristics of NMOSFETs with La incorporated HfSiON and HfON are compared in detail. The charge trapping model shows that threshold voltage shift (${\Delta}V_{\mathrm{T}}$) of NMOSFETs with HfLaON is greater than that of HfLaSiON. PBTI lifetime of HfLaSiON is also greater than that of HfLaON by about 2~3 orders of magnitude. Therefore, high charge trapping rate of HfLaON can be explained by higher trap density than HfLaSiON. The different de-trapping behavior under recovery stress can be explained by the stable energy for U-trap model, which is related to trap energy level at zero electric field in high-k dielectric. The trap energy level of two devices at zero electric field, which is extracted using Frenkel-poole emission model, is 1,658 eV for HfLaSiON and 1,730 eV for HfLaON, respectively. Moreover, the optical phonon energy of HfLaON extracted from the thermally activated gate current is greater than that of HfLaSiON.