• Proceedings of the KIEE Conference
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• 2006.07a
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• pp.115-116
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• 2006

Since the discovery of the high-temperature superconductors, many researches have been performed for the practical applications of superconductivity technologies in various fields. As results, significant progress has been achieved. Especially, Superconducting Fault Current Limiter (SFCL) offers an attractive means to limit fault current in power systems. The SFCLS, in contrast to current limiting reactors or high impedance transformers, are capable of limiting short circuit currents without adding considerable voltage drop and energy loss to power systems during normal operation. Under fault conditions, a resistance is automatically inserted into the power grid to limit the peak short-circuit current by transition from the superconducting state to the normal state, the quench. The advantages, like fail safe operation and quick recovery, make SFCL very attractive, especially for rapidly growing power systems with higher short-circuit capacities. In order to verify the effectiveness of the SFCL, in this paper, the analysis of fault current and voltage stability assessment in a sample distribution system and a transmission system are performed by the PSCAD/EMTDC based simulation method. Through the simulation, the advantage of SFCL application is shown, and the effective parameters of the SFCL are also recommended for both distribution and transmission systems. A resistive type component of SFCL is adopted in the analysis. The simulation results demonstrate not only the effectiveness of the proposed simulation scheme but also SFCL parameter assessment technique.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.294-295
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• 2006

Field sequential liquid crystal display (FSLCD) has advantages such as a high transmittance due to no use of color filter and high color reproductivity because of LED backlight for a luminance source. However, to realize FSLCD response time of the LCD must be below 5ms. In this paper, we have chosen electrically controlled birefringence (ECB) mode for this application and studied film compensation to improve the operating voltage and viewing angle and to achieve a fast response time optimizing the condition of the discotic film and TAC film, operating voltage decreases to 5V, and viewing angle range is $160^{\circ}$ at horizontal and vertical direction, respectively and $120^{\circ}$ in diagonal direction. (contrast ratio > 10:1) and optimized cell exhibits a fast response time of 4ms in most grey levels.

• Journal of radiological science and technology
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• v.10 no.1
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• pp.31-35
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• 1987

Authors have investigated actual conditions of 22 hospitals throughout the Seoul district to evaluate of chest radiographic systems. The results are as followed: 1. Concerning exposure factors, most hospitals have used low tube voltage, merely two hospitals high tube voltage, that is, over 120 kVp. Roughly halves of intensifying screens have been used in hospitals were medium speed screens, and the rests were high speed screens. 2, Surface doses existed within wide range of $10{\sim}63.5mR$, and image quality value were $5.60{\sim}7.49$. 3. The minimum perceptibility of Burger Phantom have been increased with contrast improvement.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.22 no.5
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• pp.259-267
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• 2010

An experiment has been performed in order to investigate the characteristics of multiple thermoelectric modules (TEMs) with electrical circuits. The open circuit voltage of TEM connected parallel circuit is equal to the sum of individual TEMs. In contrast, the open circuit voltage is equal to the average of that individual TEM for a series circuit. The power output and conversion efficiency of TEM for both parallel and series circuits increase as the operating temperature conditions for individual TEMs becomes identical. Comparing parallel with series circuits, the power generation performance is more excellent for series circuit than parallel circuit. This result is attributed to the power loss from the TEM with better power generation performance.

• Korean Journal of Materials Research
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• v.21 no.10
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• pp.532-541
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• 2011

The Xe plasma flat lamp, considered to be a new eco-friendly LCD backlight, requires a further improvement of its luminance and luminous efficiency. To improve the performance of this type of lamp, it is necessary to understand the effects of the discharge variables on the luminous characteristics of the lamp. In this study, the luminous characteristics of a coplanartype Xe plasma flat lamp with a teeth-type electrode pattern were analyzed while varying the gas composition, gas pressure and input voltage. The effects of the phosphor layer on the discharge and the luminous characteristics of the lamp were also studied. The luminous efficiency of the coplanar-type Xe plasma flat lamp improved as the Xe input ratio and gas pressure increased. Higher luminous efficiency was also obtained when helium (He) was used as a buffer gas and when a phosphor layer was fabricated on the electrode region. In contrast, the luminous efficiency was reduced with increasing the input voltage. It was found that the infrared emissions from the lamp were affected by the Xe excitation rate in the plasma, the Xe gas density, the collisional quenching of excited Xe species by gas molecules, and the recombination rate between the Xe ions and electrons.

• Bulletin of the Korean Chemical Society
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• v.31 no.12
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• pp.3723-3729
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• 2010

We investigated the high-excitation voltage cathodoluminescence (CL) performance of blue light-emitting (ZnS:Ag,Al,Cl) and green light-emitting (ZnS:Cu,Al) phosphors coated with metal oxides ($SiO_2$, $Al_2O_3$, and MgO). Hydrolysis of the metal oxide precursors tetraethoxysilane, aluminum isopropoxide, and magnesium nitrate, with subsequent heat annealing at $400^{\circ}C$, produced $SiO_2$ nanoparticles, an $Al_2O_3$ thin film, and MgO scale-type film, respectively, on the surface of the phosphors. Effects of the phosphor surface coatings on CL intensities and aging behavior of the phosphors were assessed using an accelerating voltage of 12 kV. The MgO thick film coverage exhibited less reduction in initial CL intensity and was most effective in improving aging degradation. Phosphors treated with a low concentration of magnesium nitrate maintained their initial CL intensities without aging degradation for 2000 s. In contrast, the $SiO_2$ and the $Al_2O_3$ coverages were ineffective in improving aging degradation.

• The Transactions of the Korean Institute of Power Electronics
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• v.10 no.6
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• pp.587-591
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• 2005

Driving Waveform of AC PDP in reset periode is increased and decreased with constant slope to improve dark room contrast ratio and image quality. But the slope and magnitude of ramp waveform are related to strong and weak discharge with temperature change in AC PDP. So this paper proposes a methods of changing the slope and magnitude of ramp waveform during reset periode according to temperature change in AC PDP. Experimental variable factors ire chosen to setup slope, setdown slope, and -Vy voltage magnitude in Y sustain electrode. The proposed methods are expected to compensate for effect of the temperature change, causing misfiring in high and low temprature, with varing the slope and magnitude of ramp voltage during reset period and improve image quality.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.30 no.1
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• pp.1-7
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• 2016

With a collimated $CO_2$ laser beam, the bidirectional current switching was realized in a two-terminal electronic device based on a highly resistive vanadium dioxide($VO_2$) thin film. A $VO_2$ thin film was grown on a $Al_2O_3$ substrate by a pulsed laser deposition method. For the fabrication of a two-terminal electronic device, the $VO_2$ thin film was etched by an ion beam-assisted milling method, and the $VO_2$ device, of which $VO_2$ patch width and electrode separation were 50 and $100{\mu}m$, respectively, was fabricated through a photolithographic method. A bias voltage range for stable bidirectional current switching was found by using the current-voltage property of the device measured in a current-controlled mode. The transient responses of bidirectionally switched currents were analyzed when the laser was modulated at a variety of pulse widths and repetition rates. A switching contrast was measured as ~3333, and rising and falling times were measured as ~39 and ~21ms, respectively.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.11
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• pp.28-34
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• 2015

By incorporating a 966nm near infrared laser, we demonstrated bidirectional current triggering of between 0 and 10mA in a two-terminal planar device based on a highly resistive vanadium dioxide ($VO_2$) thin film grown by a pulsed laser deposition method. A two-terminal planar device, which had an electrode separation of $100{\mu}m$ and a $50{\mu}m-wide$ $VO_2$ conducting layer, was fabricated through ion beam-assisted milling and photolithographic techniques. A bias voltage range for stable bidirectional current triggering was determined by investigating the current-voltage curves of the $VO_2-based$ device in a current-controlled mode. Bidirectional current triggering of up to 10mA was realized by directly illuminating the $VO_2$ film with a focused infrared laser beam, and the transient responses of triggered currents were analyzed when the laser was modulated at various pulse widths and repetition rates. A switching contrast between off- and on-state currents was evaluated as ~3571, and the rising and falling times were measured as ~40 and ~20ms, respectively.

• Current Optics and Photonics
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• v.5 no.2
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• pp.173-179
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• 2021

The electroluminescence (EL) intensities of GaN-based light-emitting diodes (LEDs) are estimated based on their photoluminescence (PL) properties. The PL intensity obtained under open-circuit conditions is divided into two parts: the PL intensity under a forward bias lower than the optical turn-on voltage, and the difference between the PL intensities under open-circuit conditions and under forward bias. The luminescence induced by photoexcitation under a constant forward bias lower than the optical turn-on voltage is primarily the PL from the excited area of the LED. In contrast the intensity difference, obtained by subtracting the PL intensity under the forward bias from that under open-circuit conditions, contains the EL induced by the photocarriers generated during photoexcitation. In addition, a reverse photocurrent is generated during photoexcitation under constant forward bias across the LED, and can be correlated with the PL-intensity difference. The relationship between the photocurrent and PL-intensity difference matches well the relationship between the injection current and EL intensity of LEDs. The ratio between the photocurrent generated under a bias and the short-circuit current is related to the ratio between the PL-intensity difference and the PL intensity under open-circuit conditions. A relational expression consisting of the ratios, short-circuit current, and PL under open-circuit conditions is proposed to estimate the EL intensity.