• Title/Summary/Keyword: Voltage Detector

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Design of CMOS LC VCO with Fast AFC Technique for IEEE 802.11a/b/g Wireless LANs (IEEE 802.11a/b/g 무선 랜을 위한 고속 AFC 기법의 CMOS LC VCO의 설계)

  • Ahn Tae-Won;Yoon Chan-Geun;Moon Yong
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.9 s.351
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    • pp.17-22
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    • 2006
  • CMOS LC VCO with fast response adaptive frequency calibration (AFC) technique for IEEE 802.11a/b/g WLANs is designed in 1.8V $0.18{\mu}m$ CMOS process. The possible operation is verified for 5.8GHz band, 5.2GHz band, and 2.4GHz band using the switchable L-C resonators. To linearize its frequency-voltage gain (Kvco), optimized multiple MOS varactor biasing tecknique is used. In order to operate in each band frequency range with reduced VCO gain, 4-bit digitally controlled switched- capacitor bank is used and a wide-range digital logic quadricorrelator (WDLQ) is implemented for fast frequency detector.

Design of The 10bit 80MHz CMOS D/A Converter with Switching Noise Reduction Method (스위칭 잡음 감소기법을 이용한 10비트 80MHz CMOS D/A 변환기 설계)

  • Hwang, Jung-Jin;Seon, Jong-Kug;Park, Li-Min;Yoon, Kwang-Sub
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.6
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    • pp.35-42
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    • 2010
  • This paper describes a 10 bit 80MHz CMOS D/A converter for wireless communication system. The proposed circuit in the paper is implemented with a $0.18{\mu}m$ CMOS n-well 1-poly 6-metal process. The architecture of the circuit consists of the 4bit LSB with binary decoder, and both the 3bit ULSB and the 3bit MSB with the thermometer decoder. The measurement results demonstrates SFDR of 60.42dBc at sampling frequency 80MHz, input frequency 1MHz and ENOB of 8.75bit. INL and DNL have been measured to be ${\pm}$0.38LSB and ${\pm}$0.32LSB and glitch energy is measured to be 4.6$pV{\cdot}s$. Total power dissipation is 48mW at 80MHz(maximum sampling frequency) with a single power supply of 1.8V.

Development of Inter-Turn Short Circuits Sensor for Field Winding of Synchronous Generator

  • Nam J-H;Jeon Y-S;Choe G-H;Lee S-H;Jeong S-Y;Yoo B-Y;Ju Y-H;Lee Y-J;Shin W-S
    • Proceedings of the KIPE Conference
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    • 2001.10a
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    • pp.56-59
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    • 2001
  • An effective method of detecting inter-turn short circuits on round rotor windings is described. Shorted-turns can have significant effects on a generator and its performance. A method of detecting inter-turn short circuits on rotor windings is described. The approach used is to measure the rate of change of the air-gap flux density wave when the rotor is at operating speed and excitation is applied to the field winding. The inter-turn short circuits sensor for synchronous generator's field winding has been developed. The sensor, installed in the generator air-gap, senses the slot leakage flux of field winding and produces a voltage waveform proportional to the rate of change of the flux. For identification of reliability for sensor, a inter-turn short circuits test was performed at the West-Inchon combined cycle power plant on gas turbine generator and steam turbine generator. This sensor will be used as a detecting of shorted-turn for field winding of synchronous generator. The purpose of this paper is to describe the design and operation of a sensitive inter-turn short circuits detector. In this paper, development of inter-turn short circuits sensor for field winding of synchronous generator and application in a field.

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Pyroelectric Peyformance Evaluation of Pure PZT and Alternately Deposited PZT/PT Thin Films (PZT 순수박막과 PZT/PT 교차박막의 적외선 감지 특성 비교)

  • Ko, Jong-Soo;Kwak, Byung-Man
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.26 no.6
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    • pp.1001-1007
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    • 2002
  • To improve the performance of the PZT thin flms, each PZT and PT layer was alternately deposited on a Pt/Ti/Si$_3$N$_4$/SiO$_2$/Si substrate by a modified sol-gel solid precursor technique. For comparison, PZT thin films were also prepared with an identical method under the same conditions. XRD measurement revealed that the diffraction pattern of the multilayer film was due to the superimposition of the PZT and PT patterns. At 1㎑, a dielectric constant of 389 and 558, a dielectric loss of 1.2% and 1.1% were obtained for the PZT/PT and PZT thin films, respectively. If we consider the PT dielectric constant to be 260, it is clear that the dielectric constant of alternately deposited PZT/PT thin films was well adjusted. The PZT/PT thin film showed a low dielectric constant and a similar dielectric loss compared with those of the PZT film. The figures of merit on detectivity for the PZT/PT and PZT thin films were 20.3$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and 18.7$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and the figures of merit on voltage response were 0.038㎡/C and 0.028 ㎡/C, respectively. The high figures of merit for the PZT/PT film were ascribed to its relatively low dielectric constant when compared to the PZT thin films.

Substrate Effects on the Response of PZT Infrared Detectors (상이한 기판조건에 따른 PZT 적외선 감지소자의 성능 변화)

  • Go, Jong-Su;Gwak, Byeong-Man;Liu, Weiguo;Zhu, Weiguang
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.26 no.3
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    • pp.428-435
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    • 2002
  • Pyroelectric $Pb(Zr_{0.3}Ti_{0.7})O_3$ (PZT30/70) thin film IR detectors has been fabricated and characterised. The PZT30/70 thin film was deposited onto $Pt/Ti/Si_3N_4/SiO_2/Si$ substrate by the sol-gel process. Four different substrate conditions were studied for their effects on the pyroelectric responses of the IR detectors. The substrate conditions were the combinations of the Si etching and the Pt/Ti patterning. In the Si etched substrate, the $Si_3N_4/SiO_2$ composite layer was used as silicon etch-stop, and was used as the membrane to support the PZT pyroelectric film element as well. The measured pyroelectric current and voltage responses of detectors fabricated on the micro-machined thin $Si_3N_4/SiO_2$ membrane were two orders higher than those of the detectors on the bulk-silicon. For detectors on the membrane substrate, the Pt/Ti patterned detectors showed a 2-times higher pyroelectric response than that of not-patterned detectors. On the other hand, the pyroelectric response of the detectors on the not-etched Si substrate was almost the same, regardless of the Pt/Ti patterning. It was also found that the rise time strongly depended on the substrate thickness: the thicker the substrate was, the longer the rise-time.

Temperature Compensation of NDIR $CO_{2}$ Gas Sensor Implemented with ASIC Chip (ASIC 칩 내장형 비분산 적외선 이산화탄소 가스센서의 온도보상)

  • Yi, Seung-Hwan;Park, Jong-Seon
    • Journal of the Korean Institute of Gas
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    • v.11 no.1 s.34
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    • pp.40-45
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    • 2007
  • This paper describes NDIR $CO_{2}$ gas sensor that shows the characteristics of temperature compensation. It consists of novel optical cavity that has two elliptical mirrors and a thermopile that includes ASIC chip in the same metal package for the amplification of detector output voltage and temperature sensor. The newly developed sensor module shows high accuracy ($less\;than {\pm}40\;ppm$) throughout the measuring concentration of $CO_{2}$ gas from 0 ppm to 2,000 ppm. After implementing the calculation methods of gas concentration, which is based upon the experimental results, the sensor module shows high accuracy less than ${\pm}5\;ppm$ error throughout the measuring temperature range ($15^{\circ}C\;to\;35$^{\circ}C$) and gas concentrations with self-temperature compensation.

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Diagnostic X-ray Spectra Detection by Monte Carlo Simulation (진단용 X-선 스펙트럼의 몬테칼로 전산모사 측정)

  • Baek, Cheol-Ha;Lee, Seung-Jae;Kim, Daehong
    • Journal of the Korean Society of Radiology
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    • v.12 no.3
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    • pp.289-295
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    • 2018
  • Most diagnostic devices in the medical field use X-ray sources, which emit energy spectra. In radiological diagnosis, the quantitative and qualitative analyses of X-rays are essential for maintaining the image quality and minimizing the radiation dose to patients. This work aims to obtain the X-ray energy spectra used in diagnostic imaging by Monte Carlo simulation. Various X-ray spectra are simulated using a Monte Carlo simulation tool. These spectra are then compared to the reference data obtained with a tungsten anode spectral model using the interpolating polynomial (TASMIP) code. The X-ray tube voltages used are 50, 60, 80, 100, and 110 kV, respectively. CdTe and a-Se detector are used as the detectors for obtaining the X-ray spectra. Simulation results demonstrate that the various X-ray spectra are well matched with the reference data. Based on the simulation results, an appropriate X-ray spectrum, in accordance with the tube voltage, can be selected when generating an image for diagnostic imaging. The dose to be delivered to the patient can be predicted prior to examination in the diagnostic field.

DEVELOPMENT OF THE SOLAR EUV TELESCOPE ENGINEERING MODEL FOR A SATELLITE (인공위성 탑재용 극자외선 태양망원경(EUVT) EM 개발)

  • 이선민;장민환;이은석
    • Journal of Astronomy and Space Sciences
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    • v.20 no.4
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    • pp.327-338
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    • 2003
  • The aim of this paper is to describe the results of the study on the extreme-ultra-violet (EUV) solar telescope, which is designed to. a possible satellite mission. Since the EUV band can not be observed on the ground, the observation in EUV should be performed in space using a satellite or a rocket. Design of the Extreme-Ultra-Violet solar Telescope (BUVT) in this study is based on "Designing a small-sized engineering model of solar EUV telescope for a Korean satellite" (Han et al. 2001). Our EUVT design is satisfied with the requirements for a satellite in size and input voltage. The major goal of the study is to confirm if we can detect the specific wavelength (58.4nm to 62.9nm) with the EUVT. We describe re-designing of the EUVT to decrease a shelter ratio. Also we describe the technics in the optic system and the detector, which were used to manufacture the EUVT. We explain the detective program, which is to calculate the amount of the solar radiation, and the image data processing system.ng system.

Design of a CMOS Frequency Synthesizer for FRS Band (UHF FRS 대역 CMOS PLL 주파수 합성기 설계)

  • Lee, Jeung-Jin;Kim, Young-Sik
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.28 no.12
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    • pp.941-947
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    • 2017
  • This paper reports a fractional-N phase-locked-loop(PLL) frequency synthesizer that is implemented in a $0.35-{\mu}m$ standard CMOS process and generates a quadrature signal for an FRS terminal. The synthesizer consists of a voltage-controlled oscillator(VCO), a charge pump(CP), loop filter(LF), a phase frequency detector(PFD), and a frequency divider. The VCO has been designed with an LC resonant circuit to provide better phase noise and power characteristics, and the CP is designed to be able to adjust the pumping current according to the PFD output. The frequency divider has been designed by a 16-divider pre-scaler and fractional-N divider based on the third delta-sigma modulator($3^{rd}$ DSM). The LF is a third-order RC filter. The measured results show that the proposed device has a dynamic frequency range of 460~510 MHz and -3.86 dBm radio-frequency output power. The phase noise of the output signal is -94.8 dBc/Hz, and the lock-in time is $300{\mu}s$.

A 3-GSymbol/s/lane MIPI C-PHY Transceiver with Channel Mismatch Correction Circuit (채널 부정합 보정 회로를 가진 3-GSymbol/s/lane MIPI C-PHY 송수신기)

  • Choi, Seokwon;Song, Changmin;Jang, Young-Chan
    • Journal of IKEEE
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    • v.23 no.4
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    • pp.1257-1264
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    • 2019
  • A 3-GSymbol/s/lane transceiver, which supports the mobile industry processor interface (MIPI) C-physical layer (PHY) specification version 1.1, is proposed. It performs channel mismatch correction to improve the signal integrity that is deteriorated by using three-level signals over three channels. The proposed channel mismatch correction is performed by detecting channel mismatches in the receiver and adjusting the delay times of the transmission data in the transmitter according to the detection result. The channel mismatch detection in the receiver is performed by comparing the phases of the received signals with respect to the pre-determined data pattern transmitted from the transmitter. The proposed MIPI C-PHY receiver is designed using a 65 nm complementary metal-oxide-semiconductor (CMOS) process with 1.2 V supply voltage. The area and power consumption of each transceiver lane are 0.136 ㎟ and 17.4 mW/GSymbol/s, respectively. The proposed channel mismatch correction reduces the time jitter of 88.6 ps caused by the channel mismatch to 34.9 ps.