• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.5
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• pp.99-105
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• 2014

A reference spur suppressed PLL with two-symmetrical loops without changing the bandwidth which is optimized to suppress phase noise and reduce locking time has been designed. The principle of suppressing a reference signal spur is to stabilize the input voltage of voltage controlled oscillator (VCO). The proposed PLL consists of a phase-frequency detector(PFD) which has two outputs, two charge pumps(CP), two loop filters(LF), a divider and a VCO which has two inputs. Simulation results with $0.18{\mu}m$ CMOS process show that the reference spur is approximately suppressed to 1/2 of the reference spur in a conventional PLL. Even though there is a 5% process variation in the magnitude of R and C, the simulation result shows that the reference spur is still suppressed to 1/2 of the reference spur in a conventional PLL. The power consumption is 6.3mW at the power supply of 1.8V.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.5
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• pp.219-225
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• 2014

This paper describes an IC for Power Factor Correction. It can use electrical appliances which convert power from AC to DC. The power factor can be influenced not only phase difference of voltage and current but also sudden change of current waveform. This circuit enables current wave supplied to load by close to sinusoidal and minimum phase difference of voltage and current waveform. A self oscillated 10[kHz]~100[kHz] pulse signal converted to PWM waveform and it chops rectified full wave AC power which flows to load device. The multiplier and zero current detector circuit, UVLO, OVP, BGR circuits were designed. This IC has been designed and whole chip simulation use 0.5[um] double poly, double metal 20[V] CMOS process.

• Journal of the Korean Society of Radiology
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• v.14 no.3
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• pp.289-294
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• 2020

In order to control the quality of X-ray images and patient exposure, it is necessary to document the output dose(air absorption dose(mGy)) output from the X-ray unit from the measurement. The purpose of this study is to find an equation that can calculate the output dose from the measurement of the output dose and output factor(Of) of the X-ray Unit. The output dose and output factors of the X-beam irradiated from the X-ray unit were measured using an XR multi-detector. The output dose calculation formula was obtained by fitting the measured output dose divided by the tube current-exposure time product(mAs) and the set tube voltage with Allometric1. The final output dose calculation formula was obtained by multiplying this formula with the output factor. It is considered that the obtained final output dose calculation formula will be useful for all tube voltages, tube currents, exposure times, field sizes, and distances.

• Journal of IKEEE
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• v.17 no.3
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• pp.284-293
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• 2013

This paper describes a DC-DC boost converter for thermoelectric energy harvesting. The designed converter boosts the VDD through a start-up block from a low-output voltage of a thermoelectric device and the boosted VDD is used to operate the internal control block. When the VDD reaches a predefined value, a detector circuit makes the start-up block turn off to minimize current consumption. The final boosted VOUT is achieved by alternately operating the DC-DC converter for VDD and the main DC-DC converter for VOUT according to the comparator outputs. Simulation results shows that the designed converter generates 2.65V from an input voltage of 200mV and its maximum power efficiency is 63%. The area of the chip designed using a 0.35um CMOS process is $1.3mm{\times}0.7mm$ including pads.

• Journal of Sensor Science and Technology
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• v.20 no.3
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• pp.156-161
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• 2011

We fabricated a schottky barrier metal oxide semiconductor field effect transistor(SB-MOSFET) by applying indium-tin-oxide(ITO) to the source/drain on a highly resistive GaN layer grown on a silicon substrate. The MOSFET, with 10 ${\mu}M$ gate length and 100 ${\mu}M$ gate width, exhibits a threshold gate voltage of 2.7 V, and has a sub-threshold slope of 240 mV/dec taken from the $I_{DS}-V_{GS}$ characteristics at a low drain voltage of 0.05 V. The maximum drain current is 18 mA/mm and the maximum transconductance is 6 mS/mm at $V_{DS}$=3 V. We observed that the spectral photo-response characterization exhibits that the cutoff wavelength was 365 nm, and the UV/visible rejection ratio was about 130 at $V_{DS}$ = 5 V. The MOSFET-type UV detector using ITO, has a high UV photo-responsivity and so is highly applicable to the UV image sensors.

• The Transactions of the Korea Information Processing Society
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• v.7 no.1
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• pp.235-244
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• 2000

This paper presents a low power PLL based clock geneator circuit for microprocessors. It generates 32MHz${\sim}$1GHz clocks and can be integrated inside microprocessor chips. A high speed D Flip-Flop is designed using dynamic differential latch and a new Phase Frequency Detector(PFD) based on this FF is presented. The PFD enjoys low error characteristics in phase sensitivity and the PLL using this PFD has a low phase error. To improve the linearity of voltage controlled oscillator(VCO) in PLL, the voltage to current converter and current controlled oscillator combination is suggested. The resulting PLL provides wide lock range and extends frequency of generated clocks over 1 GHz. The clock generator is designed by using $0.65\;{\mu}m$ CMOS full custom technology and operates with $11\;{\mu}s$ lock-in time. The power consumption is less than 20mW.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.05a
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• pp.665-667
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• 2010

In this paper, the method to detect the IM(Inter Modulation) components of power amplifier is proposed by using frequency down-convertor. Output signals of power amplifier which is coupled by 20dB coupler and divided by power divider are applied to RF and LO of the frequency converter. It could be found the magnitude of IM components of power amplifier as a converted DC voltage which is come from the difference between 3th and 5th IM component. The detected DC voltage values are changed from 0.72V to 0.9V when 3rd IM component level changed from -26.4dBm to +2.15dBm and 5th IM component level changed from -34.2dBm to -12.89dBm as the Vgs of 3W power amplifier is changed.

• BioChip Journal
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• v.12 no.4
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• pp.332-339
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• 2018

The future neuro-prosthetic devices would be required spikes data monitoring through sub-nanoscale transistors that enables to neuroscientists and clinicals for scalable, wireless and implantable applications. This research investigates the spikes monitoring through integrated CNT front-end amplifier for neuro-prosthetic diagnosis. The proposed carbon nanotube-based architecture consists of front-end amplifier (FEA), integrate fire neuron and pseudo resistor technique that observed high electrical performance through neural activity. A pseudo resistor technique ensures large input impedance for integrated FEA by compensating the input leakage current. While carbon nanotube based FEA provides low-voltage operation with directly impacts on the power consumption and also give detector size that demonstrates fidelity of the neural signals. The observed neural activity shows amplitude of spiking in terms of action potential up to $80{\mu}V$ while local field potentials up to 40 mV by using proposed architecture. This fully integrated architecture is implemented in Analog cadence virtuoso using design kit of CNT process. The fabricated chip consumes less power consumption of $2{\mu}W$ under the supply voltage of 0.7 V. The experimental and simulated results of the integrated FEA achieves $60G{\Omega}$ of input impedance and input referred noise of $8.5nv/{\sqrt{Hz}}$ over the wide bandwidth. Moreover, measured gain of the amplifier achieves 75 dB midband from range of 1 KHz to 35 KHz. The proposed research provides refreshing neural recording data through nanotube integrated circuit and which could be beneficial for the next generation neuroscientists.

• Progress in Medical Physics
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• v.25 no.2
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• pp.116-121
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• 2014

Next future, The bio technology will be a rapidly developing. This paper is the scattering beam measurement of the red blood cell (RBC) and the fabrication of the micro cell biochip using the bio micro electro mechanical system (Bio-MEMS) process technology. The Major process method of Bio-MEMS technology was used the buffered oxide etchant (BOE), electro chemical discharge (ECD) and ultraviolet sensitive adhesives (UVSA). All experiments were the 10 times according to the process conditions. The experiment and research are required the ultraviolet expose, the micro fluid current, the cell control and the measurement of the output voltage Vpp (peak to peak) waveform by scattering angles. The transmitting and receiving of the laser beam was used the single mode optical fiber. The principles of the optical properties are as follows. The red blood cells were injected into the micro channel. The single mode optical fiber was inserting in the guide channel. The He-Ne laser beam was focusing in the single mode optical fiber. The transmission He-Ne laser beam is irradiating to the red blood cells. The manufactured guide channel consists of the four inputs and the four outputs. The red blood cell was allowed with the cylinder pump. The output voltage Vpp waveform of the scattering beam was measured with a photo detector. The receiving angle of the output optical fiber is $0^{\circ}$, $5^{\circ}$, $10^{\circ}$, $15^{\circ}$. The magnitude of the output voltage Vpp waveform was measured in the decrease according to increase of the reception angles. The difference of the output voltage Vpp waveform is due differences of the light transmittance of the red blood cells.

• Journal of the Korean Society of Radiology
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• v.13 no.5
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• pp.749-755
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• 2019

In this study, we investigated the effects of tube voltage (kVp) and tube current (mAs) on an exposure index (EI) applied to a digital radiography. There used an inverter type digital X-ray generator and an image receptor (IR) utilized a portable wireless detector without a grid. Radiographic images were acquired using a cone pyramid phantom produced using a 3D printer. The X-ray tube voltage was increased from 40 kVp to 120 kVp with 10 kVp increment, and the tube current was increased from 1 mAs to 128 mAs with the twice increment. As a result, kVp had logarithmic relationship with the EI as high $R^2$ value, and mAs had a very high linear relationship too. Also, there was a high correlation between the area dose and the EI of the IR, with the $R^2$ value being 0.76 or more. In conclusion, it had showed that mAs affected the EI linearly, and that it could be advantageous to adjust the easy-to-predict mAs to maintain proper image qualities.