• Journal of the Institute of Electronics Engineers of Korea SC
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• v.39 no.6
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• pp.34-42
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• 2002

In this paper, we propose a temperature independent the detective voltage source in voltage detector. The value of a detective voltage source is designed to become m times of silicon bandgap voltage at zero absolute temperature. By properly choosing the temperature coefficient of diode, the temperature coefficient of a concave voltage nonlinearities generated by the ${\Delta}V_{BE}$ section of diode between base and emitter of transistors with a different area can be summed with convex nonlinearities the $V_{BE}$ voltage to achieve the near zero temperature coefficient of the detective voltage source. We designed that the value of a detective voltage can be varied by ${\Delta}V_{BE}$, the $V_{BE}$multiplier circuit and resistor. In order to verify the performance of a proposed detective voltage source, we manufactured the voltage detector IC for 1.9V which is fabricated in $6{\mu}m$ Bipolar technology and measured the operating characteristics, the temperature coefficient of a detective voltage. To reduce the deviation of a detective voltage in the IC process step, we introduced a trimming technology, ion implantation and an isotropic etching. In manufactured IC, the detective voltage source could achieve the stable temperature coefficient of 29ppm/$^{\circ}C$ over the temperature range of -30$^{\circ}C$ to 70$^{\circ}C$. The current consumption of a voltage detector constituted by the proposed detective voltage source is $10{\mu}A$ from 1.9V-supply voltage at room temperature.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.10
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• pp.1-8
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• 2009

In this paper, a temperature variation-insensitive power-up detector for use in analog and digital integrated systems has been proposed. To provide temperature-insensitive characteristic, nMOS and pMOS voltage dividers in the proposed power-up detector are made to have zero temperature coefficient by exploiting the fact that the effective gate-source voltage of a MOS transistor can result in mutual compensation of mobility and threshold voltage for temperature independency. Comparison results using a 68-nm CMOS process indicate that the proposed power-up detector achieves as small as 4 mV voltage variation at 1.0 V power-up voltage over a temperature range of $-30^{\circ}C$ to $90^{\circ}C$, resulting in 92.6% reduction on power-up voltage variations over conventional power-up detectors.

• Nuclear Engineering and Technology
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• v.51 no.4
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• pp.1081-1090
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• 2019

Detailed pulse shape analysis of a Geiger-$M{\ddot{u}}ller$ counter is performed to understand the pulse shape dependence on operating voltage. New data is presented to demonstrate that not all pulses generated in a GM counter are identical. In fact, there is a strong correlation between the operating voltage and the pulse shape. Similar to detector deadtime, pulse shapes fall in three distinct regions. For low voltage region, where deadtime was reported to reduce with increasing voltage, pulse generated in this region was observed to have a fixed pulse width with a variable tail. The pulse width and fall time of the tail was observed to be a function of applied voltage; exponentially reducing with increasing voltage with an exponent of negative 6E-04 and 2E-03 respectively. The second region showed a pulse without any significant tail. During this time the detector deadtime was earlier reported to be at its minimum. The highest voltage region demonstrated a different deadtime mechanism where the second pulse was reduced in width. During this time the deadtime seemed to be increasing with increasing voltage. This data allows us to gain some unique insight into the phenomenon of GM detector deadtime not reported thus far.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.1020-1022
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• 2013

In this paper, proposed peak detector for the measurement of pulse radiation dose. The speed of the pulse radiation signal is the between a few ns and tens ns. Therefore, it is difficult to measure peak voltage. Peak Detector maintains the peak voltage generated from the sensor for a few ms and the converted signals can be easily measured using the ADC. The peak detector simulation results peak value remained of more than 1ms. Pulse radiation irradiation test results, a dose of $1.95{\times}10^6rad/s$ was measured.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.6
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• pp.560-565
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• 2002

In this paper, the output voltage of a photodetector is stabilized using a digital potentiometer, to reduce the voltage variation when the detector position deviates from the center of the signal beam. The capture distance is calculated, and stabilization performance is observed through experiments. This scheme is very useful to reduce the output voltage variations due to the small change of the optical signal power, beam direction, and the detector position.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.14 no.1
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• pp.37-42
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• 2021

This paper presents a jitter and phase noise characteristic improved phase-locked loop (PLL) with loop filter voltage detector(LFVD) and frequency voltage converter(FVC). Loop filter output voltage variation is determined through a circuit made of resistor and capacitor. The output signal of a small RC time constant circuit is almost the same as to loop filter output voltage. The output signal of a large RC time constant circuit is the average value of loop filter output voltage and becomes a reference voltage to the added LFVD. The LFVD output controls the current magnitude of sub-charge pump. When the loop filter output voltage increases, LFVD decreases the loop filter output voltage. When the loop filter output voltage decreases, LFVD increases the loop filter output voltage. In addition, FVC also improves the phase noise characteristic by reducing the loop filter output voltage variation. The proposed PLL with LFVD and FVC is designed in a 0.18um CMOS process with 1.8V power voltage. Simulation results show 0.854ps jitter and 30㎲ locking time.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.3
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• pp.255-260
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• 2016

In this paper, a full-wave rectifier (FWR) with a simple vibration detector suitable for use with vibrational energy harvesting systems is presented. Conventional active FWRs where active diodes are used to reduce the diode voltage drop and increase the system efficiency are usually powered from the output. Output-powered FWRs exhibit relatively high efficiencies because the comparators used in active diodes are powered from the stable output voltage. Nevertheless, a major drawback is that these FWRs consume power from the output storage capacitor even when the system is not harvesting any energy. To overcome the problem, a technique using a simple vibration detector consisting of a peak detector and a level converter is proposed. The vibration detector detects whether vibrational energy exists or not in the input terminal and disables the comparators when there is no vibrational energy. The proposed FWR with the vibration detector is designed using a $0.35-{\mu}m$ CMOS process. Simulation results have verified the effectiveness of the proposed scheme. By using the proposed vibration detector, a decrease in leakage current by approximately 67,000 times can be achieved after the vibration disappears.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.30 no.1
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• pp.49-54
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• 2016

There is needed the quard channel triple wave lengths pyroelectric infrared flame detector to recognize the unique characteristics of fire sources in various type. This system detects the triple wave lengths of infrared flame emitting maximum radient energy and scattering frequency of flame. The quard channel infrared flame detector detects the duplicate wave lengths of maximum radient energy to enhance the accuracy of detecting fire. Especially this paper focuss on development of the self diagnosis function system including contamination, temperature and input voltage. Therefore, the prevention and early suppression of fire is available.

• Journal of Electrical Engineering and Technology
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• v.11 no.1
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• pp.157-166
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• 2016

In this paper, a new sag and peak voltage detector is proposed for a single-phase inverter using delta square operation. The conventional sag detector is from a single-phase digital phase-locked loop (DPLL) that is based on d-q transformations using an all-pass filter (APF). The d-q transformation is typically used in the three-phase coordinate system. The APF generates a virtual q-axis voltage component with a 90° phase delay, but this virtual phase cannot reflect a sudden change in the grid voltage at the instant the voltage sag occurs. As a result, the peak value is drastically distorted, and it settles down slowly. A modified APF generates the virtual q-axis voltage component from the difference between the current and the previous values of the d-axis voltage component in the stationary reference frame. However, the modified APF cannot detect the voltage sag and peak value when the sag occurs around the zero crossing points such as 0° and 180°, because the difference voltage is not sufficient to detect the voltage sag. The proposed algorithm detects the sag voltage through all regions including the zero crossing voltage. Moreover, the exact voltage drop can be acquired by calculating the q-axis component that is proportional to the d-axis component. To verify the feasibility of the proposed system, the conventional and proposed methods are compared using simulations and experimental results.

• Transactions on Electrical and Electronic Materials
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• v.3 no.4
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• pp.16-20
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• 2002

The high bias voltage associated with the thick layer (typically 500-1000 ㎛) of selenium required to have an acceptable x-ray absorption in radiography and fluoroscopy applications may have some practical inconvenience. A hybrid x-ray detector with zinc sulfide-amorphous selenium structure has been developed to improve the x-ray sensitivity of a a-Se based flat-panel digital imaging detector. Photoluminescence(PL) characteristic of a ZnS:Ag phosphor layer showed a light emission peak centered at about 450 nm, which matches the sensitivity spectrum of selenium. The dark current of the hybrid detector showed similar characteristics with that of a a-Se detector. The x-ray sensitivity of hybrid and a-Se x-ray detector was 345 pC/㎠/mR and 295 pC/㎠/mR at an applied voltage of 10 V/㎛, respectively. The purpose of this study was to evaluate the pertinence of a solution using a thin selenium layer, as a photosensitive converter, with a thick coating of silver doped zinc sulfide phosphor.