• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1741-1744
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• 2005

The electron beam machining provides very high resolution up to nanometer scale, hence the E-Beam writing technology is rapidly growing in MEMS and nano-engineering areas. For E-Beam machining, $2^{nd}$ electron detector is required to see a machined sample at the stage. The $2^{nd}$ electron detector is composed of scintillator and photomultiplier with signal amplifier and high voltage power supplier. Since a photomultiplier tube is an extremely high-sensitivity photodetector, the signal light level to be detected is very low and therefore particular care must be exercised in shielding external light. In this paper, the design methodology of $2^{nd}$ electron detector and the image noise removal method are introduced.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.10
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• pp.773-782
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• 2018

A frequency-locked loop(FLL) is a negative-feedback system that uses a frequency detector to improve the phase noise of a voltage-controlled oscillator(VCO). In this work, a theoretical analysis of the phase noise of a VCO in an FLL is presented. The analysis shows that the phase noise of the VCO follows the phase noise determined by the frequency detector and the loop filter within the FLL loop bandwidth, while the phase noise of the VCO appears outside the loop bandwidth. Therefore, it is possible to design an FLL that minimizes the phase noise of the VCO based on the theoretical analysis results. The theoretical phase noise results were verified through experiments.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.3
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• pp.229-235
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• 2001

Uncooled pyroelectric thin-film (Ba,Sr)TiO$_3$ infrared detectors thermally isolated from Si-substrate by Si$_3$N$_4$/SiO$_2$/Si$_3$N$_4$-membrane have been fabricated, and figures of merit for detectors were examined. The detector at $25^{\circ}C$ in air showed relatively high voltage responsivity of about 168.8 V/W and low specific detectivity of about 2.6$\times$10$^4$cm.Hz$^{1}$2//W at 1 Hz-chopping frequency because of very small signal-to-noise voltage ratio. It could be found that both thermal noise voltage and thermal time constant of the detector were very large by analyzing dependences of output waveforms on chopping frequency and temperature.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.5
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• pp.16-23
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• 2010

This paper presents 6bit 250MS/s flash A/D converter which can be applied to wireless communication system. To solve the problem of large power consumption in flash A/D converter, control algorithm by input signal level is used in comparator stage. Also, input voltage range detector circuit is used in reference resistor array to minimize the dynamic power consumption in the comparator. Compared with the conventional A/D converter, the proposed A/D converter shows 4.3% increase of power consumption in analog and a seventh power consumption in digital, which leads to a half of power consumption in total. The A/D converter is implemented in a $0.18{\mu}m$ CMOS 1-poly 6-metal technology. The measured results show 106mW power dissipation with 1.8V supply voltage. It shows 4.1bit ENOB at sampling frequency 250MHz and 30.27MHz input frequency.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.18 no.5
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• pp.223-228
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• 2018

In this paper the water sensor using a coaxial cavity resonator is designed and manufactured. The water sensor which can sense water drop linearly has been constructed with voltage controlled oscillator(VCO), coaxial cavity resonator, RF switch, RF detector, A/D converter, DAC and micro controller. The operating frequency range of the designed water sensor is from 2.5GHz to 3.2GHz and the input voltage and current source are 24[V/DC] and 1[A]. The designed sensor circuit includes VCO, RF switch, RF detector which varies the frequency characteristics of the devices in the high frequency of 3GHz. And so we should correct the error of the frequency characteristics of those devices in the sensor circuit. To do this, we make the reference path which switches the signals to the RF detector directly without sending it to the resonator. According to the result of simulation and measurement, we can see that there is 0-50MHz difference between simulated resonator frequency and manufactured resonator frequency.

• Journal of radiological science and technology
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• v.36 no.2
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• pp.111-122
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• 2013

This study was carried out to reduce patient dose through focus-detector distance, kilovoltage, and a combination of copper filters. In the C, L-spine lateral, Skull AP views were obtained by making changes of 60-100 kV in tube voltage and of 100-200 cm in focus-detector distance and by adding a copper filter when using an auto exposure control device in the digital radiography equipment. The incident dose showed 90 kV, 0.3 mmCu in C-spine lateral with 0.06 mGy under the condition of 200 cm; 100 kV, 0.3 mmCu with 0.40 mGy under the condition of 200 cm and 90 kV 0.3 mmCu in Skull AP with the lowest value of 0.24 mGy under the condition of 140 cm. It was observed that entrance surface dose decreased the most when was increased by 150 cm, 70 kV (C-spine lateral), 81 kV (L-spine lateral). It was also found out that as the between the focus-detector increased in the expansion of the video decreased but the difference was not significant when the distance was 180 cm or more. Skull AP showed the most reduction in the entrance surface dose when the tube voltage was changed by 80 kV, 0.1 mmCu, and 120 cm. Therefore, when using the automatic exposure control device, it is recommended to use the highest tube voltage if possible and to increase focus-detector distance at least by 150~200 cm in wall and 120~140 cm in table in consideration of the radiotechnologist's physical conditions, and to combine 0.1~0.3 mmCu and higher filters. It is thus expected to reduce patient dose by avoiding distortion of images and reducing the entrance surface dose.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.1
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• pp.48-57
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• 2020

MCU used in applications such as wireless chargers and USB type-C require MTP memory with a small cell size and a small additional process mask. Conventional double poly EEPROM cells are small in size, but additional processing masks of about 3 to 5 sheets are required, and FN tunneling type single poly EEPROM cells have a large cell size. In this paper, a 110nm MTP cell using a vertical PIP capacitor is proposed. The erase operation of the proposed MTP cell uses FN tunneling between FG and EG, and the program operation uses CHEI injection method, which reduces the MTP cell size to 1.09㎛2 by sharing the PW of the MTP cell array. Meanwhile, MTP memory IP required for applications such as USB type-C needs to operate over a wide voltage range of 2.5V to 5.5V. However, the pumping current of the VPP charge pump is the lowest when the VCC voltage is the minimum 2.5V, while the ripple voltage is large when the VCC voltage is 5.5V. Therefore, in this paper, the VPP ripple voltage is reduced to within 0.19V through SPICE simulation because the pumping current is suppressed to 474.6㎂ even when VCC is increased by controlling the number of charge pumps turned on by using the VCC detector circuit.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.4
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• pp.47-53
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• 1997

We fabricated gamma radiation detector using high resistive p-Cd$_{80}$Zn$_{20}$Te grown by high pressure bridgman method and forming au thin film electrode by chemically electroless deposition method. The device of Au/Cd$_{80}$Zn$_{20}$Te/Au is a typical MIM structure. The characteristic of current-voltage showed good linearity to 3kV/cm but it depend on the square of electric field over 3kV/cm. As the results of rutherford backscattering spectroscope(RBS) and auger spectroscope on the Au/Cd$_{80}$Zn$_{20}$Te, Au penetrated to the surface of Cd$_{80}$Zn$_{20}$Te detector absorbed slightly high energy radiation like a few hundred keV and showed good performance to detect low energy gamma ray.mma ray.

• Proceedings of the KSR Conference
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• 2000.11a
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• pp.733-739
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• 2000

This paper is described the development of on-line partial discharge detector for high voltage apparatus. This detector consists of acoustic and high frequency current sensors, amplifier part, A/D converter part, data communication part and computer. The contents of paper are characteristics of units and digital signal processing for reducing noise in partial discharge detection. We seek methods to do good digital signal processing for detection of partial discharge. We apply digital filtering methods to the elect Tic signal and a cross con-elation to the acoustic signal. This paper shows the characteristics of these filtering method and cross con-elation in partial discharge detection.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.417-420
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• 1996

We have investigated air/200ppm NO$_2$ gas-detector characteristics of using CuTBP (Copper-tetra-tert-butylphthalocyanine) chemiresistor devices. The CuTBP films were made by Langmuir-Blodgett (LB) techniques. Sensitivity, response time, recovery time, and repoducibility of the devices were measured by current-voltage characteristics. To increase sensitivity, interdigital electrode was used. It was found that a conductance G increases monotonically as the number of interdigital electrode increases, and a Sensitivity, Reproducibility is stable. As far as a current is concerned, the current when N=25 is greater than that when N=1 by 70 or so. It indicates that the number of interdigital electrodes affects the current, sensitivity and stability We have also investigated applicability of the CuTBP chemiresistor device for a gas detector.