• JSTS:Journal of Semiconductor Technology and Science
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• 제5권4호
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• pp.262-269
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• 2005

Semiconductor scientists and engineers ideally desire the faster but the cheaper non-volatile memory devices. In practice, no single device satisfies this desire because a faster device is expensive and a cheaper is slow. Therefore, in this paper, we use heterogeneous non-volatile memories and construct an efficient hierarchy for them. First, a small RAM device (e.g., MRAM, FRAM, and PRAM) is used as a write buffer of flash memory devices. Since the buffer is faster and does not have an erase operation, write can be done quickly in the buffer, making the write latency short. Also, if a write is requested to a data stored in the buffer, the write is directly processed in the buffer, reducing one write operation to flash storages. Second, we use many types of flash memories (e.g., SLC and MLC flash memories) in order to reduce the overall storage cost. Specifically, write requests are classified into two types, hot and cold, where hot data is vulnerable to be modified in the near future. Only hot data is stored in the faster SLC flash, while the cold is kept in slower MLC flash or NOR flash. The evaluation results show that the proposed hierarchy is effective at improving the access time of flash memory storages in a cost-effective manner thanks to the locality in memory accesses.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.759-763
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• 2016

We demonstrate the utilization of ion gel gate dielectrics for operating non-volatile transistor memory devices based on polymer semiconductor thin films. The gating process in typical electrolyte-gated polymer transistors occurs upon the penetration and escape of ionic components into the active channel layer, which dopes and dedopes the polymer film, respectively. Therefore, by controlling doping and dedoping processes, electrical current signals through the polymer film can be memorized and erased over a period of time, which constitutes the transistor-type memory devices. It was found that increasing the thickness of polymer films can enhance the memory performance of device including (i) the current signal ratio between its memorized state and erased state and (ii) the retention time of the signal.

• 반도체디스플레이기술학회지
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• 제21권3호
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• pp.1-6
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• 2022

Modern computer systems usually have special hardware for operations used in deep learning workload even edge computing environment. Non-volatile memories (NVMs) have been considered for alternative memory storage because they consume little static energy and occupy small area. However, there is a problem for NVMs to be directly adopted. An NVM cell has limited write endurance, so that the lifetime of NVM-based memory system is much shorter than that of conventional memory system. To overcome this problem for the deep learning system, this paper proposes a novel method to extend the lifetime based on the analysis of the deep learning workloads. If an incoming block has more than a predefined number of frequently used values, the cacheline is defined as write friendly block. During the victim selection, the cacheline has lower possibility to be chosen as victim. The experimental results show that the lifetime is increased by about 50% and energy consumption is decreased by 3% with a little performance hurt.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권6호
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• pp.741-749
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• 2014

Low power double data rate 2 non-volatile memory (LPDDR2-NVM) has been deemed the standard interface to connect non-volatile memory devices such as phase-change memory (PCM) directly to the main memory bus. However, most of the previous literature does not consider or overlook this standard interface. In this paper, we propose address phase skipping by reforming the way of interfacing with LPDDR2-NVM. To verify effectiveness and functionality, we also develop a system-level prototype that includes our customized LPDDR2-NVM controller and commercial PCM devices. Extensive simulations and measurements demonstrate up to a 3.6% memory access time reduction for commercial PCM devices and a 31.7% reduction with optimistic parameters of the PCM research prototypes in industries.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2006년도 춘계학술발표대회 및 제10회 신소재 심포지엄 논문개요집
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• pp.21.1-21.1
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• 2006

• 정보학연구
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• 제10권4호
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• pp.41-56
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• 2007

In Digital Computing Environment, volatile information such as register, cache memory, and network information are hard to make certain of a real-time collection because such volatile information are easily modified or disappeared. Thus, a collection of volatile information is one of important step for computer forensics system on ubiquitous computing. In this paper, we propose a volatile information collection module, which collects variable volatile information of server system based on memory mapping in real-time.

• 정보과학회지
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• 제33권2호
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• pp.16-41
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• 2015

• 정보과학회 논문지
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• 제42권8호
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• pp.972-978
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• 2015

비휘발성 메모리는 바이트 단위 접근과 비휘발성을 지원한다. 이러한 특성들은 비휘발성 메모리를 캐시, 메모리, 디스크와 같은 메모리 계층 구조 가운데 하나의 영역으로 사용을 가능케 한다. 비휘발성 메모리의 흥미로운 특성은 데이터 보존 기간이 실제로는 제한적인 기간을 가지고 있다는 것이다. 게다가 데이터 보존 기간과 쓰기 지연간의 트레이드오프가 존재 한다. 본 논문에서는 이를 활용하여 비휘발성 메모리를 파일 캐시로 사용하는 새로운 관리 기법을 제안한다. 제안하는 기법은 기존의 캐시 관리 기법과는 반대로 짧은 데이터 보존 시간으로 데이터를 저장하고 쓰기 성능을 개선한다. 제안하는 기법은 LRU 대비 평균 접근 지연 시간을 최대 31%, 평균 24.4%로 감소시킴을 보인다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권1호
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• pp.46-50
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• 2008

The effect of physicochemical properties of solvents on the microstructure of polyvinyl carbazole (PVK) film for non-volatile polymer memory was investigated. For the solubilization of PVK molecules and the preparation of PVK films, four solvents with different physicochemical properties of the Hildebrand solubility parameter and vapor pressure were considered: chloroform, tetrahydrofuran (THF), 1,1,2,2-tetrachloroethane (TCE), and N,N-dimehtylformamide (DMF). The solubility of PVK molecules in the solvents was observed by ultravioletvisible spectroscopy. PVK molecules were observed to be more soluble in chloroform, with a low Hildebrand solubility parameter, than solvents with higher values. The aggregated size and micro-/nano-topographical properties of PVK films were characterized using optical and atomic force microscopes. The PVK film cast from chloroform exhibited enhanced surface roughness compared to that from TCE and DMF. It was also confirmed that the microstructure of PVK film has an effect on the performance of non-volatile polymer memory.

• 정보과학회 컴퓨팅의 실제 논문지
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• 제23권7호
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• pp.428-433
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• 2017

최근 데이터센터, 소셜 네트워크 서비스 등과 같은 고성능 컴퓨팅을 요구하는 환경에서는 기존 하드디스크를 대체할 수 있는 고성능 비휘발성 메모리 저장장치의 수요가 급증하고 있다. 이러한 비휘발성 메모리의 성능은 호스트와 저장장치를 연결해주는 인터페이스에 따라 크게 좌우될 수 있다. 저장장치의 인터페이스는 계속 발전해왔으며, 기존 하드디스크에 기반을 둔 SAS/SATA 인터페이스를 대체할 수 있는 NVMe 인터페이스가 최근에 등장하였다. NVMe 인터페이스는 높은 확장성을 가지며 기존 인터페이스에 비해 낮은 지연시간을 제공한다. 본 논문은 다양한 워크로드를 통해 NVMe 저장장치의 성능을 평가하고 분석한다. 또한 NVMe 저장장치와 기존 SATA 저장장치와의 가격 대비 성능비를 비교하고 평가한다.