• 한국정보과학회:학술대회논문집
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• 한국정보과학회 2006년도 한국컴퓨터종합학술대회 논문집 Vol.33 No.1 (A)
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• pp.157-159
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• 2006

본 논문에서는 차세대 비휘발성 메모리를 이용하여 기존 플래시 메모리 파일시스템의 마운트 시간을 단축시키고 메인 메모리 사용량과 전력소모량을 감소시킬 수 있는 기법을 제시한다. 제안된 기법은 소량의 비휘발성 메모리를 사용하여 블록의 상태 정보와 파일 메타데이터로 데이터의 주소를 저장한다. 제안된 기법은 내장형 보드 상에서 구현되었으며, 실험 및 분석 결과는 마운트 시간을 크게 단축시키고 메인 메모리 사용량을 현저히 감소시켰음을 검증한다. 본 연구는 소량의 차세대 비휘발성 메모리를 내장형 시스템에서 어떻게 활용할 수 있는지에 대한 실용적인 방안을 제시하였으며, 그 효과를 실제 구현과 실험을 통해 정량적으로 검증하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제34회 동계학술대회 초록집
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• pp.314-314
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• 2008

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.13-13
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• 2011

Graphene based nano-electronic and nano-electromechanical devices will be introduced in this presentation. The first part of the presentation will be covered by our recent results on the fabrication and physical properties of artificially twisted bilayer graphene. Thanks to the recently developed contact transfer printing method, a single layer graphene sheet is stacked on various substrates/nano-structures in a controlled manner for fabricating e.g. a suspended graphene device, and single-bilayer hybrid junction. The Raman and electrical transport results of the artificially twisted bilayer indicates the decoupling of the two graphene sheets. The graphene based electromechanical devices will be presented in the second part of the presentation. Carbon nanotube based nanorelay and A new concept of non-volatile memory based on the carbon nanotube field effect transistor together with microelectromechanical switch will be briefly introduced at first. Recent progress on the graphene based nano structures of our group will be presented. The array of graphene resonators was fabricated and their mechanical resonance properties are discussed. A novel device structures using carbon nanotube field effect transistor combined with suspended graphene gate will be introduced in the end of this presentation.

• Journal of Magnetics
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• 제8권1호
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• pp.36-44
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• 2003

Three topics which are related to technologies for developing of large capacity MRAM over Gbits are reviewed. First, it is stressed that inelastic-electron-tunnel-tunneling spectroscopy(IETS) is a powerfull method to investigate the interface state between magnetic electrodes and insulator. Second, magnetic tunnel junctions with small bias voltage dependence are introduced. Finally, fabrication method of carbon masks for very small magnetic tunnel junctions is demonstrated. These three topics were presented at 47^{th} MMM 2002 conference and each paper will appear in the proceedings.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제35회 하계학술대회 초록집
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• pp.144-145
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• 2008

• 대한안전경영과학회:학술대회논문집
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• 대한안전경영과학회 1999년도 추계학술대회
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• pp.345-354
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• 1999

A new type of capacitor named "Super Capacitor" has been developed, in which the properties of electric double layer formed at the interface of activated carbon electrode- liquid organic electrolyte is applied. This capacitor is small In size, light in weight, wide In temperature range(-25~$70^{\circ}C$), large in charge-discharge capability and good in voltage preservation. And this super capacitor is applied as a power back-up for electricity failure in volatile memory devices etc., a power source for a short time and a power source for operating actuators. At present the development of high power back-up types of the capacitor system and improvement of their characteristics are being actively conducted in order to find wider applications.lications.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 G
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• pp.3259-3261
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• 1999

A passive RF transponder incorporating a non volatile memory element is powered by inductive coupling to a proximately located RF reader and communicates with reader. In this study, we designed and analyzed the passive RF transponder which is operated at 134kHz.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.144-145
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• 2007

Phase change random access memory is one of the most promising candidates for next generation non-volatile memories. However, the high reset current is one major obstacle to develop a high density PRAM. One way of the reset current reduction is to develop the new phase change material. In this paper, to reduce the reset current for phase transition, we have investigated the effect of phase change material parameters using finite element analysis.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1279-1280
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• 2007

$Al_{2}O_{3}$ 절연막을 전하포획층으로 이용하여 Top 게이트 ZnO 나노선 전계효과트랜지스터를 제작하였고, 메모리 효과를 관찰하였다. $Al_{2}O_{3}$ 층을 게이트 절연막과 전하포획층으로 사용하였다. 대표적인 Top 게이트 ZnO 나노선 전계효과트랜지스터에 대하여 게이트 전압을 Double sweep 하였을 때의 드레인 전류-게이트 전압 특성이 반시계 방향의 히스테리시스와 문턱전압변화를 나타냈다. 펄스 형태의 게이트 전압을 1초 동안 인가한 후에, 드레인 전류-게이트 전압 특성의 문턱전압 변화가 0.3 V에서 0.8 V로 증가하였다. 이러한 특성은 게이트 전극에서 음전하 캐리어가 음의 게이트 전압에 대하여 $Al_{2}O_{3}$ 층에 충전되고, 양의 게이트 전압에 대하여 방전되는 것을 나타낸다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.360-363
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• 2003

In this paper, we investigated SiNx film as a buffer layer of TFT-FRAM. Buffer layers were prepared by two step process of a $N_2$ plasma treatment and subsequent $SiN_x$ deposition. By employing $N_2$ plasma treatment, interface traps such as mobile charges and injected charges were removed, hysteresis of current-voltage curve disappeared. After $N_2$ plasma treatment, a leakage current was decreased about 2 orders. From these results, it is possible to perform the plasma treating process to make a good quality buffer layer of MFIS-FET or capacitor as an application of non-volatile memory.