• Transactions of Materials Processing
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• v.21 no.5
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• pp.285-290
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• 2012

In spite of progress in predicting ductile failure, the development of a macroscopic yield criterion to describe damage evolution in HCP (hexagonal close-packed) materials remains a challenge. HCP materials display strength differential effects (i.e., different behavior in tension versus compression) in their plastic response due to twinning. Cazacu and Stewart(2009) developed an analytical yield criterion for porous material containing randomly distributed spherical voids in an isotropic, incompressible matrix that shows tension-compression asymmetry. The goal of the calculations in this paper is to investigate the effect of the tension-compression asymmetry on necking induced by void nucleation, evolution and consolidation. In order to investigate the effect of the tension-compression asymmetry of the matrix on necking and fracture initiation, three isotropic materials A, B, and C were examined with different ratios of tension-compression asymmetry. The various types of material had BCC, FCC, and HCP crystal structures, respectively. The ratio between tension and compression in plastic flow significantly influences the fracture shape produced by damage propagation as well as affecting the localized neck.

• Korean Journal of Materials Research
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• v.11 no.9
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• pp.802-809
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• 2001

Electroplating is an attractive alternative deposition method for copper with the need for a conformal and conductive seed layer In addition, the Cu seed layer should be highly pure so as not to compromise the effective resistivity of the filled copper interconnect structure. This seed layer requires low electrical resistivity, low levels of impurities, smooth interface, good adhesion to the barrier metal and low thickness concurrent with coherence for ensuring void-free fill. The electrical conductivity of the surface plays an important role in formation of initial Cu nuclei, Cu nucleation is much easier on the substrate with higher electrical conductivities. It is also known that the nucleation processes of Cu are very sensitive to surface condition. In this study, copper seed layers deposited by magnetron sputtering onto a tantalum nitride barrier layer were used for electroplating copper in the forward pulsed mode. Prior to electroplating a copper film, the Cu seed layer was cleaned by plasma H$_2$ and $N_2$. In the plasma treatment exposure tome was varied from 1 to 20 min and plasma power from 20 to 140W. Effects of plasma pretreatment to Cu seed/Tantalum nitride (TaN)/borophosphosilicate glass (BPSG) samples on electroplating of copper (Cu) films were investigated.

• Journal of computational fluids engineering
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• v.16 no.2
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• pp.88-93
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• 2011

A numerical study of subcooled onset of nucleate boiling (ONB) in a micro-channel under pulsed heating using volume of fluids (VOF) model was conducted. The VOF simulation adopting the existing experimental condition is compared to the experimental data. The time to ONB was determined when the void fraction at the microheater surface first appeared. The theoretical superheat for homogeneous nucleation relatively predicts the transient ONB results of convective flow of water well based on local temperature distribution. It was found that once heat load increases at the heater, transient flow boiling starts to occur faster.

• Korean Journal of Materials Research
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• v.17 no.7
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• pp.371-375
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• 2007

In-situ observation of electromigration behavior of eutectic SnPb solder was performed as a function of line length at $100^{\circ}C$, $6{\times}10^4A/cm$ condition in a scanning electron microscope chamber. The incubation time for edge drift and the edge drift velocity increase as line length increases, which are discussed with the void nucleation stage of solder bump and the electromigration back flux force, respectively. Finally, the existence of electromigration product (jL) and its line length dependency are also discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.84-89
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• 1996

The nucleation and growth of microporosities was observed during the course of annealing treatment of sputter-deposited AgInSbTe thin films. There was a close correlation between the density of microporosity and the sputtering gas pressure in annealed thin films. The void density for a given composition decreased with sputtering gas pressure. It was shown from the present study that the number of porosities decreased while the average porosity size increased as the annealing temperature and holding time increased. The mechanism of porosity formation in the sputter-deposited AgInSbTe thin flus containing Ar-impurity trapped from the Ar-plasma is discussed in the present article.

• Journal of the Korean Society of Safety
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• v.14 no.1
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• pp.208-215
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• 1999

The creep behavior of a rapidly solidified and consolidated Al-9.45wt%Fe-4.45wt%Cr alloy were investigated in the stress range 40 to 115 MPa and temperature range 300(0.53Tm) to 441$^{\circ}C$(0.66Tm). It is of use to available aerospace and automobile industries for the improved performance of materials used at high temperature. Because Al alloys with improved creep resistance offer the potential for lower weight and reduced costs in aerospace and automobile components (e.g., structural members and engine parts) through the replacement of heavier and more costly materials, the safety in use at high temperature is good. The alloy is characterized by high stress exponents and activation energies for creep, which are greatly dependent on the stress and temperature. Because the creep stress is seen to cause a strongly significant enhancement of coarsening, the coarsening rate of the dispersed particles in all crept specimens is faster than that in isothermally annealed specimens. Dislocations connecting dispersoids are observed more cofrequently in crept specimens with higher stress and lower temperature. The creep strain rates in the power law creep regime were found to be predicted much better by the Shorty and Rosler/Arzt equation with the inclusion of a threshold stress and dislocation detachment mechanism. The dispersoids in this alloy were acting a source of void nucleation that finally leaded to ductile fracture within the grain so called intergranular. Each void was initiated, grown and failed at the dispersoids in the aluminium matrix. Grain boundary accommodation of the slip produced, which result in initiation of the void and then final transgranular fracture. Therefore, it was confirmed that these dispersoids played an important role in the fracture mechanism by the formation of $Al_{13}Fe_4$, $Al_{13}Cr_2$ and $Al_2O_3$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.53-53
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• 2011

As the dimension of Cu interconnects has continued to reduce, its resistivity is expected to increase at the nanoscale due to increased surface and grain boundary scattering of electrons. To suppress increase of the resistivity in nanoscale interconnects, alloying Cu with other metal elements such as Al, Mn, and Ag is being considered to increase the mean free path of the drifting electrons. The formation of Al alloy with a slight amount of Cu broadly studied in the past. The study of Cu alloy including a very small Al fraction, by contrast, recently began. The formation of Cu-Al alloy is limited in wet chemical bath and was mainly conducted for fundamental studies by sputtering or evaporation system. However, these deposition methods have a limitation in production environment due to poor step coverage in nanoscale Cu metallization. In this work, gap-filling of Cu-Al alloy was conducted by cyclic MOCVD (metal organic chemical vapor deposition), followed by thermal annealing for alloying, which prevented an unwanted chemical reaction between Cu and Al precursors. To achieve filling the Cu-Al alloy into sub-100nm trench without overhang and void formation, furthermore, hydrogen plasma pretreatment of the trench pattern with Ru barrier layer was conducted in order to suppress of Cu nucleation and growth near the entrance area of the nano-scale trench by minimizing adsorption of metal precursors. As a result, superconformal gap-fill of Cu-Al alloy could be achieved successfully in the high aspect ration nanoscale trenches. Examined morphology, microstructure, chemical composition, and electrical properties of superfilled Cu-Al alloy will be discussed in detail.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.4 s.37
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• pp.281-287
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• 2005

in-situ electromigration test was carried out for edge drift lines of eutectic SnPb solder using Scanning Electron Microscopy (SEM). The electromigration test for the eutectic SnPb solder sample was conducted at temperature of $90^{\circ}C$ and the current density of $6{\times}10^4A/cm^2$. Edge drift at cathode and hillock growth at anode were observed in-situ in a SEM chamber during electromigration test. It was clearly revealed that eutectic SnPb solder lines has an incubation stage before void formation during electromigration test, which seemed to be related to the void nucleation stage of flip chip solder electromigration behaviors.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2004.03a
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• pp.216-227
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• 2004

A new cavitating model by using bubble size distribution based on bubbles-mass has been proposed. Both liquid and vapor phases are treated with Eulerian framework as a mixture containing minute cavitating bubbles. In addition vapor phase consists of various sizes of vapor bubbles, which are distributed to classes based on their mass. The bubble number-density for each class was solved by considering the change of the bubble-mass due to phase change as well as generation of new bubbles due to heterogeneous nucleation. In this method, the bubble-mass is treated as an independent variable, and the other dependent variables are solved in spatial coordinates and bubble-mass coordinate. Firstly, we employed this method to calculate bubble nucleation and growth in stationary super-heated liquid nitrogen, and bubble collapse in stationary sub-cooled one. In the case of bubble growth in super-heated liquid, bubble number-density of the smallest class based on its mass is increased due to the nucleation. These new bubbles grow with time, and the bubbles shift to larger class. Therefore void fraction of each class is increased due to the growth in the whole class. On the other hand, in the case of bubble collapse in sub-cooled liquid, the existing bubbles are contracted, and then they shift to smaller class. It finally becomes extinct at the smallest one. Secondly, the present method is applied to a cavitating flow around NACA00l5 foil. Liquid nitrogen and liquid oxygen are employed as working fluids. Cavitation number, $\sigma$, is fixed at 0.15, inlet velocities are changed at 5, 10, 20 and 50m/s. Inlet temperatures are 90K in case of liquid nitrogen, and 90K and 1l0K in case of liquid oxygen. 110K of oxygen is corresponding to the 90K of nitrogen because of the same relative temperature to the critical one, $T_{r}$=$T/T_c^{+}$. Cavitating flow around the NACA0015 foils was properly analyzed by using bubble size distribution. Finally, the method is applied to a cavitating flow in an inducer of the LE-7A hydrogen turbo-pump. This inducer has 3 spiral foils. However, for simplicity, 2D calculation was carried out in an unrolled channel at 0.9R cross-section. The channel moves against the fluid at a peripheral velocity corresponding to the inducer revolutions. Total inlet pressure, $Pt_{in}$, is set at l00KPa, because cavitation is not generated at a design point, $Pt_{in}$=260KPa. The bubbles occur upstream of the foils and collapse between them. Cavitating flow in the inducer was successfully predicted by using the bubble size distribution.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.3
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• pp.67-74
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• 2011

Keys to high wiring density semiconductor packages include flip-chip bonding and build-up substrate technologies. The current issues are the establishment of a fine pitch flip-chip bonding technology and a low coefficient of thermal expansion (CTE) substrate technology. In particular, electromigration and thermomigration in fine pitch flipchip joints have been recognized as a major reliability issue. In this paper, electromigration and thermomigration in Cu/Sn-3Ag-0.5Cu (SAC305)/Cu flip-chip joints and electromigration in Cu/In/Cu flip chip joints are investigated. In the electromigration test, a large electromigration void nucleation at the cathode, large growth of intermetallic compounds (IMCs) at the anode, a unique solder bump deformation towards the cathode, and the significantly prolonged electromigration lifetime with the underfill were observed in both types of joints. In addition, the effects of crystallographic orientation of Sn on electromigration were observed in the Cu/SAC305/Cu joints. In the thermomigration test, Cu dissolution was accelerated on the hot side, and formation of IMCs was enhanced on the cold side at a thermal gradient of about $60^{\circ}C$/cm, which was lower than previously reported. The rate of Cu atom migration was found comparable to that of electromigration under current conditions.