• Title/Summary/Keyword: VoX

Search Result 126, Processing Time 0.03 seconds

Synthesis and Photocatalytic Activity of TiO2/BiVO4 Layered Films under Visible Light Irradiation

  • Li, Xuan;Zhang, Zhuo;Zhang, Feng-Jun;Liu, Jin;Ye, Jie;Oh, Won-Chun
    • Journal of the Korean Ceramic Society
    • /
    • v.53 no.6
    • /
    • pp.665-669
    • /
    • 2016
  • $TiO_2/BiVO_4$ layered films were prepared by sol-gel and spin coating methods. X-ray diffraction (XRD), scanning electron microscopy (SEM) and Uv-vis spectroscopy were used to investigate the crystal structure, morphology and ultraviolet-visible absorption of the $TiO_2/BiVO_4$ films. The photocatalytic activity of the prepared films was inspected according to the degradation of methylene blue. The results show that the prepared films present a net chain structure; the absorption band edge had obvious red shift. The degradation of the methylene blue solution was about 80% after 300 mins using $TiO_2/BiVO_4$ layered films under visible light, which was stronger than when using only pure $TiO_2$ film and $BiVO_4$ film.

Electrical Resistance of Mo-doped $VO_2$ Films Coated on Graphite Conductive Plates by a Sol-gel Method (몰리브덴이 첨가된 이산화바나듐으로 표면처리한 탄소계 전도성판의 전기저항특성)

  • Choi, Won-Gyu;Jung, Hye-Mi;Lee, Jong-Hyun;Im, Se-Joon;Um, Suk-Kee
    • Proceedings of the KSME Conference
    • /
    • 2008.11b
    • /
    • pp.2007-2010
    • /
    • 2008
  • Vanadium pentoxide ($V_2O_5$) powder was prepared and mixed with Molybdenum Oxides ($MoM_3$) to form Mo-doped and -undoped $VO_2$ films by a sol-gel method on graphite conductive substrates. X-Ray diffraction (XRD) and scanning electron microscopy (SEM) was used to investigate the chemical compositions and microstructures of the Mo-doped and -undoped $VO_2$ films. The variation of electrical resistance was measured as a function of temperature and stoichiometric composition between vanadium and molybdenum. In this study, it was found that Mo-doped and -undoped $VO_2$ shows the typical negative temperature coefficient (NTC) behavior. As the amount of the molybdenum increases, the electrical resistance of Modoped $VO_2$ film gets reduced under the transition temperature and a linear decrease in the transition temperature is observed. From these experimental results, we can conclude that the electrical resistance behavior with temperature change of $VO_2$ films can be utilized as a self-heating source with the electrical current flowing through the graphite substrate.

  • PDF

Influence of Eu3+ Doping Content on Photoluminescence of GdVO4 Red Phosphors

  • Lee, Jae-Hui;Jo, Sin-Ho
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2011.08a
    • /
    • pp.314-315
    • /
    • 2011
  • 최근에 $Eu^{3+}$ 이온이 첨가된 적색 형광체에 대한 연구가 활발히 진행되고 있다. 현재 상업적으로 이용 가능한 적색 형광체와 비교하여 $GdVO_4$를 모체로 갖는 적색 형광체는 우수한 열적 안정성과 광학적 특성을 나타낸다. 본 연구에서는 고효율의 적색 형광체를 개발하기 위하여 고상 반응법을 사용하여 $Gd_{1-x}VO_4$ : $Eu_x^{3+}$ 형광체를 합성하였다. $Gd_{1-x}VO_4$ : $Eu_x^{3+}$ 형광체 분말 시료는 활성체인 $Eu^{3+}$의 함량을 0, 0.05, 0.10, 0.15, 0.20 mol로 변화시키며, 초기 물질 $Gd_2O_3$ (99.99%), $H_3BO_3$ (99.99%), $Eu_2O_3$ (99.9%)를 화학 적량으로 준비하였다. 분말은 볼밀과 건조 작업을 거친 후, 500$^{\circ}C$ 전기로에서 5시간 동안 하소 공정, 1,100$^{\circ}C$에서 6시간 동안 소성시켰다. 합성된 형광체 분말의 XRD 측정한 결과에 의하면, $Eu^{3+}$의 함량비에 관계없이 모든 분말 시료들에서 주 피크는 24.7$^{\circ}$와 33.2$^{\circ}$에 최대값을 갖는 (200)와 (112)면의 회절 신호들이 관측되었고, 상대적으로 약한 회절 세기를 갖는 (101), (211), (301), (103), (312)와 (420)면의 회절 신호들은 각각 18.6$^{\circ}$, 31.1$^{\circ}$, 40.1$^{\circ}$, 44.6$^{\circ}$, 49.2$^{\circ}$와 57.1$^{\circ}$에서 나타났다(Fig. 1). 이결과를 JCPDS(86-0996)와 비교함으로써, 합성된 형광체 분말의 결정 구조는 정방정계임을 확인할 수 있었다. $Eu^{3+}$의 함량비가 0.05 mol에서 0.15 mol로 증가함에 따라 주 피크인 (200)면의 회절 신호의 세기는 증가한 반면, 0.20 mol에서는 급격하게 감소하였으며, 이 경우에 반치폭의 크기는 0.16$^{\circ}$이었다. 결정 입자의 크기를 결정하기 위하여 (200)면의 회절 피크에 대한 정보를 잘 알려진 Scherrer의 식에 대입하여 계산한 결과, $Eu^{3+}$의 함량비가 0 mol인 경우에, 평균 크기는 48 nm이었다. $Eu^{3+}$ 함량비를 증가함에 따라 결정 입자의 크기도 비례하여 증가하였으며, 0.15 mol에서 최대값을 나타내었으나, 농도 억제 효과로 인하여 0.20 mol 에서는 현저히 감소하였다. 표면 형상의 변화를 관측한 SEM 측정 결과에 의하면, $Eu^{3+}$의 함량비가 0 mol에서 0.15 mol로 증가함에 따라 결정 입자의 모양은 사다리꼴 형태에서 모서리가 둥글게 깎인 구형으로 변형되는 것을 관측할 수 있었으며 평균 크기는 500 nm이었다(Fig. 2). $Eu^{3+}$의 함량이 0.20 mol인 경우에 결정 입자의 형상은 더욱 구형에 접근하였으나, 평균 크기는 최소값을 나타내었다. 실험 결과로부터, 적절한 함량비를 갖는 $Eu^{3+}$ 이온을 첨가함으로써 적색 형광체 $Gd_{1-x}VO_4$ : $Eu^{3+}$ 분말의 결정 크기와 발광 세기를 제어할 수 있음을 제안한다.

  • PDF

Optical properties of vanadium dioxide thin films on c-Al2O3 (001) substrates by in-situ RF magnetron sputtering

  • Han, Seung Ho;Kang, So Hee;Kim, Hyeongkeun;Yoon, Dae Ho;Yang, Woo Seok
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.23 no.5
    • /
    • pp.224-229
    • /
    • 2013
  • Vanadium oxide thin films were deposited on $c-Al_2O_3$ (001) substrate by in-situ RF magnetron sputtering. Oxygen partial pressure was adjusted to prepare thermochromic $VO_2$ phase. X-ray diffraction patterns and scanning electron microscopy convincingly showed that plate-like $V_2O_5$ grains were changed into round-shape $VO_2$ grains as oxygen partial pressure decreased. After the optimized deposition conditions were fixed, the effect of substrate temperature and orientation on the optical properties of $VO_2$ thin films was analyzed.

Understanding of Growth Habits of $VO_2$ Film on Graphene and Their Effects on Metal to Insulator $Transition_2$

  • Yang, Jae-Hoon;Kim, Keun-Soo;Jang, A-Rang;Yang, Hyoung-Woo;Kang, Dae-Joon
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2012.02a
    • /
    • pp.572-572
    • /
    • 2012
  • Growth of metal oxides on graphene may lead to a better understanding of delicate effects of their growth habits on their underlying physics. The vanadium dioxide ($VO_2$) is well known for its metal-to-insulator transition accompanied by a reversible first order structural phase transition at 340 K. This transition makes $VO_2$ a potentially useful material for applications in electrical and optical devices. We report a successful growth of $VO_2$ nanostructures on a graphene substrate via a vapor-solid transport route. As-grown $VO_2$ nanostructures on graphene were systematically characterized by field emission scanning electron microscopy, x-ray diffraction, Raman spectroscopy, FT-IR spectroscopy and high resolution transmission electron microscopy. These results indicate that the strain between $VO_2$ and graphene layers may be easily controlled by the number of underlying graphene layer. We also found that the strain in-between $VO_2$ and graphene layer affected its metal-to-insulator transition characteristics. This study demonstrates a new way for synthesizing $VO_2$ in a desired phase on the transparent conducting graphene substrate and an easy pathway for controlling metal-to-insulator phase transition via strain.

  • PDF

High-Luminous Efficiency Full-Color Emitting $GdVO_4$:Eu, Er, Tm Phosphor Thin Films

  • Minami, Takatsugu;Miyata, Toshihiro;Mochizuki, Yuu
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2004.08a
    • /
    • pp.1091-1094
    • /
    • 2004
  • High-luminous efficiency full-color emissions in photoluminescence (PL) were obtained in $GdVO_4$ phosphor thin films co-doped with various amounts of Eu, Er and/or Tm and postannealed at approximately 1000$^{\circ}C$. The $GdVO_4$:Eu,Er,Tm phosphor thin films were deposited on thick $BaTiO_3$ ceramic sheets by r.f. magnetron sputtering using powder targets and postannealed in an air atmosphere. The rare earth (RE) content (RE/(Gd+V+RE) atomic ratio) in the oxide phosphor thin films was varied in the range from 0.1 to 2 at.%. It was found that the excitation of $GdVO_4$:Eu.Er,Tm thin films is attributed to band-to-band transition. A white PL emission was obtained in a $GdVO_4$:Eu,Er,Tm thin film with Eu, Er and Tm contents of 0.2, 0.7 and 1 at.%, respectively: CIE chromaticity color coordinates. (X=0.352 and Y=0.351). In addition, a white emission was obtained in a thin-film electroluminescent (TFEL) device made with this thin film.

  • PDF

Selective Catalytic Reduction (SCR) Technology Trend for the Removal of Nitrogen Oxide from Ship Flue Gas (선박 배가스 내 질소산화물 제거를 위한 선택적촉매환원법(SCR) 기술동향)

  • Won, Jong Min;Hong, Sung Chang
    • Prospectives of Industrial Chemistry
    • /
    • v.22 no.5
    • /
    • pp.25-40
    • /
    • 2019
  • 전 세계적으로 환경문제를 해결하기 위한 방안으로 환경규제를 강화시키며 특히 다양한 대기오염 물질 중 최근 큰 이슈인 초미세먼지 저감을 위해 전구물질로 알려진 질소산화물을 제어하기 위한 다양한 기술개발이 가속화되고 있다. 특히, 다양한 처리기술 중에 기술적·경제적인 이점을 갖춘 선택적 촉매환원법(selective catalytic reduction, SCR) 기술을 통하여 질소산화물 제거를 위해 암모니아를 환원제로 반응에 참여시켜 인체에 무해한 H2O, N2로 전환하는 기술이 대표적이다. 최근 전 세계적으로 다양한 산업군에서 질소산화물이 배출되고 있으며, 점오염원뿐만이 아니라 비점오염원(mobile sources)에 대한 규제가 강화되고 있다. 디젤엔진이 장착된 선박 배가스 처리장치 내 SCR 기술이 주목을 받고 있으며, NH3-SCR에 사용되는 촉매는 주로 VOx/TiO2, VOx/W/TiO2 촉매가 대표적이다. 한편 선박 디젤엔진에 사용되는 연료에 따라 연소배가스 특성이 다르다. 이러한 연료가 연소됨에 따라 SO2, SO3가 발생되고 환원제인 NH3와 결합하여 황산암모늄염((NH4)2SO4), ABS (ammonium bisulfate, NH4HSO4)과 같은 염을 형성시켜 탈질촉매의 비활성화 문제가 발생된다. 이러한 비활성화 물질이 침적된 탈질촉매를 재활성화 시키기 위하여 열 산화를 통해 재생시키고 있다. 이처럼 선박용 SCR 촉매는 강화되는 배출규제 및 엔진기술의 발달로 저감되는 운전 온도에 대비하여 저온 활성 재생이 가능한 고활성, 고내구성 촉매기술 개발이 필요하다.

Electrical properties of sputtered vanadium oxide thin films in Al/$VO_x$/Al device structure (Al/$VO_x$/Al 소자 구조에서 스퍼터된 바나듐 산화막의 전기적 특성)

  • 박재홍;최용남;최복길;최창규;김성진
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2000.07a
    • /
    • pp.460-463
    • /
    • 2000
  • The current-voltage characteristics of the sandwich system at different annealing temperatures and different bias voltages have been studied. In order to prepare the Al/V$O_X$/Al sandwich devices structure, thin films of vanadium oxide(V$O_X$) was deposited by r.f. magnetron sputtering from $V_2$$O_5$ target in 10% gas mixture of argon and oxygen, and annealed during lhour at different temperatures in vacuum. Crystall structure, surface morphology, and thickness of films were characterized through XRD, SEM and I-V characteristics were measured by electrometer. The films prepared below 20$0^{\circ}C$ were amorphous, and those prepared above 300 $^{\circ}C$were polycrystalline. At low fields electron injected to conduction band of vanadium oxide and formed space charge, current was limited by trap. Conduction mechanism at mid fields due to Schottky emission, while at high fields it changed to Fowler-Nordheim tunneling effects.

  • PDF

Crystallographic, Magnetic and Mössbauer Study of Phase Transition in LaVO3

  • Yoon, Sung-Hyun
    • Journal of Magnetics
    • /
    • v.12 no.3
    • /
    • pp.108-112
    • /
    • 2007
  • Nature of phase transition in $LaVO_3$ has been studied using X-ray diffraction, SQUID magnetometer, and $M\"{o}ssbauer$ spectroscopy with 1% of $^{57}Fe$ doped sample. The crystal structure was orthorhombic with space group Pnma. Antiferromagnetic phase transition temperature $T_N$ was 140K, below which a weak ferromagnetic trace has been found. $M\"{o}ssbauer$ spectra below $T_N$ were single set of hyperfine sextet, which enabled us to discard the possibility of two inequivalent magnetic sites or uncompensated antiferromagnetism. Hyperfine magnetic field abruptly disappeared as low as about 90K, much below $T_N$.

In-situ Growth of Epitaxial PbVO3 Thin Films under Reduction Atmosphere

  • Oh, Seol Hee;Jin, Hye-Jin;Shin, Hye-Young;Shin, Ran Hee;Yoon, Seokhyun;Jo, William;Seo, Yu-Seong;Ahn, Jai-Seok
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2014.02a
    • /
    • pp.361.1-361.1
    • /
    • 2014
  • PbVO3 (PVO), a polar magnetic material considered as a candidate of multiferroic, has ferroelectricity along the c-axis and 2-dimensional antiferromagnetism lying in the in-plane through epitaxial growth [1,2]. PVO thin films were grown on LaAlO3 (001) substrates under reduction atmosphere from a stable Pb2V2O7 sintered target using pulsed laser deposition method. Epitaxial growth of the PVO films is possible only under Ar atmospheren with no oxygen partial pressure. X-ray diffraction was used to investigate the phase formation and texture of the films. We confirmed epitaxial growth of the PVO films with crystalline relationship of PbVO3[001]//LaAlO3[001] and PbVO3[100]//LaAlO3[100]. In addition, surface morphology of the films displays drastic changes in accordance with the growth conditions. Elongated PVO grains are related to the Pb2V2O7 pyrochlore structure. The relation between structural deformation and ferroelectricity in the PVO films was examined by local measurement of piezoresponse force microscopy.

  • PDF